2N382 Search Results

2n3820 transistor

Abstract: TIC 106b 2n3820
Contextual Info: TYPE 2N3820 P-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR B U L L E T IN N O . D L -S 6 8 7 9 4 7 , A U G U S T 1 9 6 5 -R E V IS E D J U L Y 1968 SILECTf FIELD-EFFECT TRANSISTOR * For Industrial and Consumer Small-Signal Applications m e c h a n ic a l d a t a

2N3829

Contextual Info: TYPE 2N3829 P-N-P SILICON TRANSISTOR _ B U L L E T I N N O . D L -S 6 5 7 4 5 5 , M A R C H 1 96 5 DESIGNED FOR HIGH-SPEED SWITCHING APPLICATIONS • High f r : 350 Me min at 10 v, 30 ma • Low Guaranteed VcE sat : 0.18 v at 30 ma * m echanical d ata

2N3967

Abstract: 2N3369 2N3370 2N3460 2N3821 2N3822 2N3967A 2N3968 NJ16
Contextual Info: INTER P E T C OR P EbE D • 4a2Lflflö 0 0 0 0 1 6 7 7 ■ ai N-Channel JFETs General-Purpose Device Types ELECTRICAL CHARACTERISTICS at TA - 25 °C Vcsiom V<8« GSS Ig nA) 2N3369 2N3370 2N34S8 2 N3459 2N3460 -4 0 -4 0 -5 0 -5 0 -5 0 -1 -1 -1 -1 -1 2N3821

2N5458 NATIONAL SEMICONDUCTOR

Abstract: to236 2n4338 MMBFJ201 MMBFJ202 2N5458 BF244A BF245C JFET 2N3684 2N3686 2N4338
Contextual Info: JFET General Purpose continued 7 baE T> m b 5 0 1 1 3 0 003T H T fl bTO « N S C S . NATL SEMICON]) ( DISCRETE ) N Channel V p @ V DSlD Device 3 2N3684 2N3686 2N3822 PN4303 2N4338 2N4339 2N4340 2N5457 MMBF5457 2N5458 MMBF5458 2N5459 MMBF5459 BF244Ä BF245A

Contextual Info: N-Channel JFET High Frequency Amplifier 2N3823 FE A T U R E S A B S O L U T E M A X IM U M R A T IN G S T a - 2 5 °C u n le ss oth e rw ise n oted • L o w N o is e • L o w C a p a c ita n c e • T r a n s d u c ta n c e U p to 6 5 0 0 p s G a te -S o u rce or G a te -D raln V oltage . -30V

2N3820 NATIONAL SEMICONDUCTOR

Contextual Info: Junction FETS JFET General Purpose P Channel V p V q s l0 b v gss Device . V M in (V ) m M in Max m % V M in M ax CMS . e ra (pF) M ax IPF) Max . an @ Fraq Package ! M at (H i) 2N3820 20 8 -1 0 10000 0 .8 5 32 16 PN5Q33 20 0 .3 2 5 - 10 1000 1 5 25 7

2N3828

Contextual Info: 2N3828 0.1 A, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES General Purpose Amplifier Transistor  TO-92 G H  Emitter  Base  Collector J A D

2n5105

Abstract: 2N5245 2N5485 2N5670 pin 2N3819 2N3821 2N3822 2N3823 2N4223 2N4224
Contextual Info: /ÄYM,© 1 ^©[nlÄMKlIlIL [FITP L O W P O W E R F IE L D E F F E C T T R A N S I S T O R S Case Type Style Humber (TO- Geometry 2N3819 72 2N3821» 72 2N3822» 72 2N3823« 72 2N4223 72 2N4224 72 72 2N4416 2N4416A 72 2N5078 72 2N5103 72 2N5104 72 72 2N5105

2n3822

Abstract: TO72 package n-channel jfet 2N3822 2n3821 2N3822 equivalent
Contextual Info: CALÔGIC CORP MAE ]> 1 Ô4 4 3 2 2 3 WÊCGC N-Channel JFET High Frequency Amplifier CORPORATION \J T-Z\-Z 5 2N3821/2N3822 FEATURES ABSOLUTE MAXIMUM RATINGS Ta - 25°C unless otherwise noted • Low Capacitance • Up to 6500|is Transconductance Part Package

Contextual Info: 2N3822+JANTX Transistors N-Channel JFET Military/High-RelY V BR DSS (V)50 V(BR)GSS (V)50 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)200þ I(GSS) Max. (A)100p @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

Contextual Info: 2N3821+JANTXV Transistors N-Channel JFET Military/High-RelY V BR DSS (V)50 V(BR)GSS (V)50 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)200þ I(GSS) Max. (A)100p @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

2N3823

Contextual Info: <Jnc. ^£.1±E.ij 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELtPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N3823 SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Strii t PIN I 7 I OI/U o>ib SQUHCC QHAIN MAXIMUM RATINGS Syntlml v.c,.

2N3819 equivalent

Abstract: UC734 2N5668 2N5078 2N3822 equivalent 2n5105 2N5485 U1994E DSASW0036854 2N3821
Contextual Info: *BVDgo Case Ciss or Type Style Geometry Max BVgss Number TO (pF) Min (V) 2N3819 72 FN2.5 25 8.0 2N3821 72 FN3.6 50 6.0 2N3822 72 FN3.6 50 6.0 2N3823 72 FN2.5 30 6.0 2N4223 72 FN2.5 30 6.0 2N4224 72 FN2.5 30 6.0 2N4416 72 FN2.5 30 4.0 2N4416A 72 FN2.5 30

Contextual Info: 2 N 3823 N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR CASE T O-72 THE 2N3823 IS AN N-CHANNEL JFET DESIGNED FOR RF AMPLIFIER AND MIXER APPLICATIONS. IT FEATURES LOW CROSS-MODULATION, LOW NOISE FIGURE AND GOOD POWER GAIN AT F R E ­ QUENCY UP TO 450MHz. • THE DEVICE IS ALSO

2n3824

Contextual Info: 2N3824 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N3824 Availability Online Store

2N3824

Abstract: 2N6660Q 2N6660CSM4-JQR-B TO276AB 2N4393CSMJ
Contextual Info: Search Results Part number search for devices beginning "2N3824" Datasheets are downloaded as Acrobat PDF files. Semelab Home Fet Products ID cont (A) PD (W) RDSS (Ω) CISS (pF) QG (nC) PRODUCT Polarity Package VDSS (V) 2N3824 N-Channel TO72 50V - 0.3W -

2N3824

Abstract: 2N3823 transistor 2N3824 2N3823 equivalent 2N3824 equivalent NJ32 4B401
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page B-4 B-4 01/99 2N3823, 2N3824 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Small Signal Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current

MPF111 equivalent

Abstract: 2N3819 2N3821-4 2N3921-2 2N4084-5 2N4220-2 2N4223-24 2N5457-9 2N5556-58 MPF109
Contextual Info: 2N3823 n-channel JFET designed for a Siliconix . Performance Curves NRL See Section 5 VHF Am plifiers Oscillators M ixers BEN EFITS • Low Noise N F < 2.5 dB @ 100 MHz TO -72 See Section 7 »ABSO LUTE M A X IM U M R A TIN G S 25°C Gate-Drain or Gate-Source Voltage (Note 1 ) . -3 0 V

2N3819 ti

Abstract: 2N3819 equivalent 2N3822 2N4223-24 2N5556-58 2N5457-9 2N3819 2N3821 2N3821-4 2N4220-2
Contextual Info: designed for . B Siliconix . Performance Curves NRL See Section 5 2N3822 • Sm all-Signal A m plifiers ■ Oscillators 2N3821 n-channel JFETs B EN EFITS • Operates from High Supply Voltages B V q s s > 50 V •A B S O L U TE M A X IM U M R A T IN G S 25°C

PN5432

Abstract: U1898
Contextual Info: A National Semiconductor NATL N-Channel JFETs C|» rds on (11) @ lD (P F)@ V d s Max (mA) Max (V) 2N3824 2N3966 2N3970 2N3971 2N3972 TO-72 TO-72 TO-18 TO-18 TO-18 SO 30 40 40 40 1 1 1 1 1 0.1 1 0.25* 0.25* 0.25* 30 20 20 20 20 0.1 0.1 0.25 0.25 0.25 15 10

jfet selection guide

Abstract: rcm 2020
Contextual Info: 3> —3 H JFET Selection Guide _ N - C n a n n e l 2 2 Ul o JFETs CO o S W IT C H F S /n H O P P F R S , S tyle 2N3824 TO-72 50 2N3966 TO-72 30 1 2N3970• TO-18 40 1 2N3971 TO-18 40 1 0.25* 2N3972 TO-18 40 1 0,25* 2N4091 TO-18 40 1 0.2* 2N4092 TO-18 40 1

2n3820

Contextual Info: P-CHANNEL JFETs T O -9 2 IT O -2 2 6 A A ELECTRICAL CHARACTERISTICS at TA = 25°C ^GS oM v Device Type (BR)GSS Min. Limits *GSS Min. Max. <§»G Max. (V ) (V ) (mA) (nA) 2N3820 20 10 20 10 TP3993 25 1.0 1.0 15 TP3994 25 1.0 1.0 15 TP 4381 25 1.0 1.0 15 1.0

2N3822

Abstract: 2n3821
Contextual Info: cal CORPORATION •? 2N3821/2N3822 FEATURES ABSOLUTE MAXIMUM RATINGS Ta - 25°C unless otherwise noted • Low Capacitance • Up to 6500ns Transconductance Gate-Source Gate-Drain Voltage .-50V

Contextual Info: 2N3823+JANTX Transistors N-Channel JFET Military/High-RelY V BR DSS (V)30 V(BR)GSS (V)30Ê I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)200þ I(GSS) Max. (A)500p @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)