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    2N3820 TRANSISTOR Search Results

    2N3820 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    2N3820 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N3820

    Abstract: 2n3820 transistor 2n3820 equivalent 2N3820 APPLICATION
    Text: 2N3820 2N3820 P-Channel General Purpose Amplifier • This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. • Sourced from process 89. TO-92 1 1. Drain 2. Gate 3. Source Epitaxial Silicon Transistor


    Original     		2N3820 2N3820 2n3820 transistor 2n3820 equivalent 2N3820 APPLICATION PDF

    2n3820

    Abstract: No abstract text available
    Text: 2N3820 2N3820 P-Channel General Purpose Amplifier • This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. • Sourced from process 89. TO-92 1 1. Drain 2. Gate 3. Source PNP Epitaxial Silicon Transistor


    Original     		2N3820 2n3820 PDF

    2N3820

    Abstract: 2n3820 transistor to 92 case
    Text: Central 2N3820 P-CHANNEL JUNCTION FET ♦II* Central Semiconductor Corp. Central semiconductor Corp. JEDEC TO-92 CASE 14 5 Adam s Avenue Hauppauge, N ew Y ork 1 1 7 8 8 DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3820 type is a Silicon P-Channel Transistor designed for low level amplifier applications.


    OCR Scan     		2N3820 2n3820 transistor to 92 case PDF

    Untitled

    Abstract: No abstract text available
    Text: , LJ nc. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N3820 P-Channel General Purpose Amplifier • This device is designed primarily for low level audio and general purpose applications with high impedance signal sources.


    Original     		2N3820 27TYP PDF

    2N3820

    Abstract: No abstract text available
    Text: Philips Components D ata sheet status Preliminary specification date of issue October 1990 DESCRIPTION Silicon p-channel junction field-e ffect transistor in a plastic TO-92 envelope. It is intended fo r use in general purpose am plifiers. 2N3820 P-channel J-FET


    OCR Scan     		2N3820 MBB181 003SA4b S3T31 Q03Sfl4fl 2N3820 PDF

    "P-Channel JFET"

    Abstract: 2N3820 P-Channel JFET 2n3820 transistor Junction P FET E 212 fet 2N3820 ti
    Text: Philips Components 2N3820 Data sheet status Preliminary specification date of issue October 1990 P-channel J-FET PINNING • TO-92 DESCRIPTION Silicon p-channel junction field-effect transistor in a plastic TO-92 envelope. It ¡s intended for use in general purpose amplifiers.


    OCR Scan     		2N3820 MBB161 003Sfl4b 67max "P-Channel JFET" 2N3820 P-Channel JFET 2n3820 transistor Junction P FET E 212 fet 2N3820 ti PDF

    2n3820 transistor

    Abstract: TIC 106b 2n3820
    Text: TYPE 2N3820 P-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR B U L L E T IN N O . D L -S 6 8 7 9 4 7 , A U G U S T 1 9 6 5 -R E V IS E D J U L Y 1968 SILECTf FIELD-EFFECT TRANSISTOR * For Industrial and Consumer Small-Signal Applications m e c h a n ic a l d a t a


    OCR Scan     		2N3820 IL-STD-202C, 2n3820 transistor TIC 106b PDF

    2N3820

    Abstract: P-Channel JFET 2n3820 transistor
    Text: PHI L IP S 41E D INTERNATIONAL Philips Components D ata sheet status Preliminary specification d ate of Issue October 1990 DESCRIPTION Silicon p-channel junction field-effect transistor in a plastic TO-92 envelope, it is intended for use in general purpose amplifiers.


    OCR Scan     		711002b 2b337 2N3820 Q02b33ô 711005t 002b340 2N3820 P-Channel JFET 2n3820 transistor PDF

    E 212 fet

    Abstract: 2N3820 philips jfet Junction P FET "P-Channel JFET" j-fet transistor P-Channel JFET 2N3820 ti
    Text: PHILIPS MIE INTERNATIONAL Data sheet status Preliminary specification date o f issue October 1990 DESCRIPTION Silicon p-channel junction field-effect transistor in a plastic TO-92 envelope. It is intended for use in general purpose amplifiers. D EH 711002b


    OCR Scan     		711002b 12fci337 2N3820 MBB161 711002b DG2b33fl 2N3820 7110fiSb 002b340 E 212 fet philips jfet Junction P FET "P-Channel JFET" j-fet transistor P-Channel JFET 2N3820 ti PDF

    F245B

    Abstract: BF256 2N3820 BC264 U1898E BFS21A MPF105 vergleichsliste BF320 TIS69
    Text: FACHHÄNDLER INFORMATION DISKRETE PRODUKTE FETs Warum FET-Vorzugsprodukte? Weil: • 20% unserer Produkte mehr als 80% aller Anforderungen erfüllen. ■ wir unsere Produkte mittels Computer analysiert haben nach: größtem Bedarf notwendigen Parametern niedrigsten Kosten


    OCR Scan     		100-MHz F245B BF256 2N3820 BC264 U1898E BFS21A MPF105 vergleichsliste BF320 TIS69 PDF

    2N3820

    Abstract: No abstract text available
    Text: riOTOROLA SC -CDIODES/OPT0 } Type Number Page Number Page Number D-S D-S S-G Power 2N3743 3-105 3-107 3-107 3-100 3-109 3-109 3-111 3-111 2N3439 2N3440 2N3444S 2N3467 2N3468 2N34B5A 2N3486A 2-6 2-7 2-7 THYRISTORS 2-7 3-105 2N4199 through 2N4206 2-5 3-120 TRANSISTORS


    OCR Scan     		2N3743 2N3439 2N3440 2N3444S 2N3467 2N3468 2N34B5A 2N3486A 2N3715 2N3716 2N3820 PDF

    Untitled

    Abstract: No abstract text available
    Text: AL L E GRO MI C ROS Y S T E MS 8514019 SPRA G U E. I NC T3 D • 0 5 D4 3 3 Ö S E M IC O N D S / I C S GDD3bü3 93D 1 ■ ALGR 0 3 6 0 3 J> PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at Tfl = 25°C VGs on V(BR)GSS


    OCR Scan     		MPF110 MPF111 MPF112 MPF820 TPBC264A TPBC264B TPBC264C TPBC264D TPJ105 TPJ107 PDF

    TIS34

    Abstract: tis58 TIS25 TIS59 2n2386 2N3328 TIS42 2N2499 2N3820 silec
    Text: Field Effect Transistors No. £^ o 1 ! C S o w U “ S ilic o n P -C h a n n e l F ie ld Effect S ilic o n N -C h a n n el F ield Effect S ilic o n N -C h a n n el D ual M atched Field Effect Germ anium P Channel Field Effect V DG V !e mA p p p p p p 20 20


    OCR Scan     		2N2386 2N2497 N2498 N2499 2N2S00 2N3328 2N3330 2N3331 N3332 2N3573 TIS34 tis58 TIS25 TIS59 2N3328 TIS42 2N2499 2N3820 silec PDF

    2N4342

    Abstract: 2N4360 2N5033 2N4343 2N4381 2N5474 2N4303 2n6485 2N4382 2N4039
    Text: 2048352 "DÌÒDÈ fRANSI STÖR 'cÒ INC 840 00137 D r a aaMê 3 sa 000D137 1 -17 r. -DIODE TRANSISTOR CÜ.ÍWC. T PNPTO-66 » i o d e ’ ransis‘ tor co inc 201 689-0400 « T e le x; 139485 • Outside NY & NJ area call T O L L F R E E 800-526-4581 jF A X No. 201-575-5883


    OCR Scan     		PNPTO-66 000D137 J31QDE TRdf\J515T0R 30a/a) 2N3740 2N3766 2N3740A 2N3767 2N3741 2N4342 2N4360 2N5033 2N4343 2N4381 2N5474 2N4303 2n6485 2N4382 2N4039 PDF

    Untitled

    Abstract: No abstract text available
    Text: î SPRAGUE/SEMICOND 8 5 1 4 0 1 9 SP RA GU E. GROUP ^ D • S E M I C O N D S / ICS ÖS13Ö50 0DG3LG3 9 3 D 03 6 0 3 T J> T ï 'Z Ÿ - Z - S PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at Tfl = 25°C VGSfOlf V BB]GSS


    OCR Scan     		TPBC264B TPBC264C TPBC264D TPJ105 TPJ106 -226AA/STYLES PDF

    bc 7-25 pnp

    Abstract: transistor bc 7-25 transistor 724 731 zener diode transistor B 722 transistor Bc 2n2222 transistor BC 176 MPS6521 transistor 2N5952 TP2222A transistor
    Text: DISCRETE SEMICONDUCTORS INDEX AND CROSS REFERENCE Industry Number Type Allegro Number s Allegro Package 1 Pinning 2 3 Ratings (Page) 1N914 Diode TMPD914 TO-236AB A NC K 7-29 1N4148 Diode TMPD4148 TO-236AB A NC K 7-29 1N4150 Diode TM PD4150 TO-236AB A NC K


    OCR Scan     		1N914 1N4148 1N4150 1N4565 1N4565A 1N4566 1N4566A 1N4570 1N4570A 1N4571 bc 7-25 pnp transistor bc 7-25 transistor 724 731 zener diode transistor B 722 transistor Bc 2n2222 transistor BC 176 MPS6521 transistor 2N5952 TP2222A transistor PDF

    TIS69 equivalent

    Abstract: 2N3575 Germanium itt TIS59 TIS58 2N2386 TIS26
    Text: IN T R O D U C T IO N This booklet is designed to simplify your selection of field effect transistors, which best meet your requirement. It is a comprehensive pocket size reference to your widest choice of field effect transistors. This broad selection is your best assurance of pin-pomting the


    OCR Scan     		2N5045, 2N5046, 2N5047 TIS69 equivalent 2N3575 Germanium itt TIS59 TIS58 2N2386 TIS26 PDF

    2N3819 MOTOROLA

    Abstract: 2N3792 MOTOROLA motorola 2N3819 2n3819 replacement 2N3375 JAN 2N5339 JANS 2N3741 MOTOROLA 2N2484 motorola TO206AB 2N3715 MOTOROLA
    Text: MOT OROL A SC XSTRS/R F 5bE D WË b 3 b 7 S 5 4 OOT O ÔS ? 1 T- 9/-AD MIL-QUALIFIED PRODUCTS Motorola M IL qualified components are ordered by adding suffix JAN, JTX, JTX V or JANS to the part numbers indicated in the following tables. Although Motorola will continue to sup­


    OCR Scan     		b3b7S54 MIL-STD-19500. O-205AD O-213AA 2N6603 2N6604 2N2857" 2N4957 2N5109 2N3819 MOTOROLA 2N3792 MOTOROLA motorola 2N3819 2n3819 replacement 2N3375 JAN 2N5339 JANS 2N3741 MOTOROLA 2N2484 motorola TO206AB 2N3715 MOTOROLA PDF

    transistors BC 543

    Abstract: F245B BSR57M5 fmba0656 TJ309 f256c f245a PN5432 PN4857 2n 5459
    Text: NPN Multiple Chip Transistors Device No. [Mark] MMPQ2369A Case Style SO-16 S3 V CBO V VCES* EBO (V) (V) Min (V) Min Min VCEO 15 40 4.5 I CBO ICES* (nA) Max 400 @ VCB (V) Min 20 40 40 30 20 h FE V CE 10 10 30 100 0.35 1 0.4 1 0.2 0.2 & @ Max (mA) (V) 120


    Original     		MMPQ2369A SO-16 FMBA14 FFB2222A FMB2222A MMPQ2222A transistors BC 543 F245B BSR57M5 fmba0656 TJ309 f256c f245a PN5432 PN4857 2n 5459 PDF

    bc 7-25 pnp

    Abstract: transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA
    Text: DISCRETE SEMICONDUCTORS IN D EX AND CROSS REFERENCE Industry Number 1N914 1N4148 1N4150 1N5229 1N5230 Type Diode Diode Diode Zener Zener Pinning 2 3 A A A A A NC NC NC NC K K K K NC K 7-29 7-29 7-29 7-30 7-30 A A A A A NC NC NC NC NC K K K K K 7-30 7-30 7-30


    OCR Scan     		1N914 1N4148 1N4150 1N5229 1N5230 1N5231 1N5232 1N5233 1N5234 1N5235 bc 7-25 pnp transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA PDF

    transistor 2N3563

    Abstract: 2n3819 cross reference 2SK30 2SA726 2sk41e 2SC1026 transistor 2sc1417 2Sa1026 2SC2259 BC150 transistor
    Text: Section 1 Cross Reference Guide . 1-3 Process Selection Guides Preferred Part Numbers by Process .


    Original     		PDF

    E112 jfet

    Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
    Text: Selection Guide and Cross Reference Linear Integrated Systems SMALL SIGNAL DISCRETE SEMICONDUCTORS JFETs DMOS Switches BJTs MOSFETs Linear Integrated Systems 4042 Clipper Court • Fremont, CA 94538 • www.linearsystems.com Tel: 510 490-9160 • Toll Free: 800 359-4023 • Fax: 510 353-0261


    Original     		LS422 LS423 LS424 LS425 LS426 LS832 LS833 LS4391 LS5911 E112 jfet siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565 PDF

    TRANSISTORS BJT bc548

    Abstract: jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302
    Text: Small Signal Transistor and JFET Selection Guide Small Signal Transistor and JFET Selection Guide Analog Discrete Interface & Logic Optoelectronics August 2002 Across the board. Around the world. Small Signal Transistor and JFET Selection Guide August 2002


    Original     		OT-623F OT-323 OT-23 OT-89 OT-223 O-92S O-226AE O-92L TRANSISTORS BJT bc548 jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302 PDF

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


    OCR Scan     		LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc PDF