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    2N39 Price and Stock

    Walsin Technology Corporation 0402N391F500CT

    CAP CER 390PF 50V C0G/NP0 0402
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    DigiKey 0402N391F500CT Cut Tape 78,724 1
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    TME 0402N391F500CT 10,000
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    Micro Commercial Components 2N3904-AP

    TRANS NPN 40V 0.2A TO-92
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    DigiKey 2N3904-AP Ammo Pack 62,000 2,000
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    Component Electronics, Inc 2N3904-AP 880
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    Walsin Technology Corporation 0402N390J500CT

    CAP CER 39PF 50V C0G/NP0 0402
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    onsemi 2N3906TAR

    TRANS PNP 40V 0.2A TO-92-3
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    DigiKey 2N3906TAR Ammo Pack 16,000 2,000
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    Mouser Electronics 2N3906TAR 9,293
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    Arrow Electronics 2N3906TAR 10,000 9 Weeks 2,000
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    2N3906TAR Cut Strips 8,576 9 Weeks 1
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    Rochester Electronics 2N3906TAR 23,684 1
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    Avnet Silica 2N3906TAR 10 Weeks 2,000
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    EBV Elektronik 2N3906TAR 11 Weeks 2,000
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    Master Electronics 2N3906TAR 14,000
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    Walsin Technology Corporation 0402N390F500CT

    CAP CER 39PF 50V C0G/NP0 0402
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    2N39 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N39 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N39 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N39 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N3900 Allegro MicroSystems General Purpose Bipolar Transistor, NPN, 18 MinV, TO-92, 3-Pin Scan PDF
    2N3900 Allegro MicroSystems Bipolar transistor Scan PDF
    2N3900 Central Semiconductor NPN EPOXY Transistors Scan PDF
    2N3900 Central Semiconductor NPN Epoxy - Switching and General Purpose Transistors Scan PDF
    2N3900 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    2N3900 Crimson Semiconductor Transistor Selection Guide Scan PDF
    2N3900 General Electric Semiconductor Data Book 1971 Scan PDF
    2N3900 General Electric Semiconductor Data Handbook 1977 Scan PDF
    2N3900 Micro Electronics Semiconductor Device Data Book Scan PDF
    2N3900 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N3900 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N3900 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N3900 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N3900 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N3900 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N3900 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N3900 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    ...

    2N39 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2n3972

    Abstract: transistor 2N3972
    Text: TYPES 2N3970 THRU 2N3972 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T IN N O . D L - S 7 31 1 9 1 3 . M A R C H 1973 S Y M M E T R IC A L N-C H A N N EL F IE L D -E F F E C T TRAN SISTO RS FOR HIGH-SPEED C O M M U TA TO R A N D CHOPPER APPLICATIO N S


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    2N3970 2N3972 2N3971 transistor 2N3972 PDF

    2N3904

    Abstract: No abstract text available
    Text: DC COMPONENTS CO., LTD. 2N3904 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose switching and amplifier applications. TO-92 Pinning .190 4.83 .170(4.33) 1 = Emitter 2 = Base 3 = Collector


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    2N3904 100mA, 100MHz 2N3904 PDF

    ADM1033 D

    Abstract: fs5 mosfet 1404D
    Text: ADM1033 Thermal Monitor and Fan Speed RPM Controller The ADM1033 is a one channel remote- and local-temperature sensor and fan controller. The remote channel monitors the temperature of the remote thermal diode, which may be discrete 2N3904/6s or may be located on a microprocessor die. The device also


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    ADM1033 2N3904/6s ADM1033/D ADM1033 D fs5 mosfet 1404D PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3958 MONOLITHIC DUAL N-CHANNEL JFET The 2N3958 is a Low Noise, Low Drift, Monolithic Dual N-Channel JFET The 2N3958 family are matched JFET pairs for differential amplifiers. The 2N3958 family of general purpose JFETs is characterized for low and medium


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    2N3958 PDF

    2N3996

    Abstract: 2N3997 2N3999 1000C 2N3998
    Text: TECHNICAL DATA 2N3996 JAN, JTX, JTXV 2N3997 JAN, JTX, JTXV 2N3998 JAN, JTX, JTXV 2N3999 JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/374 NPN POWER SWITCHING SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage


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    2N3996 2N3997 2N3998 2N3999 MIL-PRF-19500/374 1000C 2N3996, 2N3998 2N3997, 2N3999 1000C PDF

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N39032SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N39042SA1245 167 *2SC1923 2SC2996 266 * 2N39052SA1255 170 *2SC1959 2SC3011 272


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    2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737 PDF

    2N3956

    Abstract: 2N3958 equivalent 2N3957 TO71 package Siliconix JFET Pairs
    Text: SILICONIX INC Ô2S473S 0013015 b 1ÖE D fX S ilic o n ix 2N3956 SERIES JL M N-Channel JFET Pairs “T-ZT7-2-7 The 2N3956 Series are monolithic designed for high performance amplification. JFET pairs differential PART NUMBER This series features tight matching,


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    2S473S 2N3956 2N3957 2N3958 300Ms 2N3958 equivalent TO71 package Siliconix JFET Pairs PDF

    transistor 2n3906

    Abstract: PNP switching transistor 2N3906 mhz PNP switching transistor 2N3906 2n3906 PNP transistor DC current gain transistor2n3906 PNP TRANSISTOR SOT54 2n3906 specification 2N3904 2N3906 switching transistor
    Text: Philips Semiconductors Product specification PNP switching transistor 2N3906 FEATURES PINNING • Low current max. 200 mA PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 collector 2 base 3 emitter • High-speed switching in industrial applications.


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    2N3906 2N3904. SC-43 transistor 2n3906 PNP switching transistor 2N3906 mhz PNP switching transistor 2N3906 2n3906 PNP transistor DC current gain transistor2n3906 PNP TRANSISTOR SOT54 2n3906 specification 2N3904 switching transistor PDF

    tr 2n3906

    Abstract: 2N3906 2N3906 plastic 2N3906 die marking k3 pnp
    Text: 2N3906 PNP SMALL SIGNAL TRANSISTOR POWER SEMICONDUCTOR Features • • • • Epitaxial Planar Die Construction Available in Both Through-Hole and Surface Mount Packages Suitable for Switching and Amplifier Applications Complementary NPN Types Available


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    2N3906 2N3904) MIL-STD-202, MMBT3906 DS11202 tr 2n3906 2N3906 2N3906 plastic 2N3906 die marking k3 pnp PDF

    2n3904 225

    Abstract: 2N3904 2N3904 die
    Text: 2N3904 NPN SMALL SIGNAL TRANSISTOR POWER SEMICONDUCTOR Features • • • • Epitaxial Planar Die Construction Available in both Through-Hole and Surface Mount Packages Ideal for Switching and Amplifier Applications Complementary PNP Type Available 2N3906


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    2N3904 2N3906) MIL-STD-202, DS11102 2n3904 225 2N3904 2N3904 die PDF

    2n3904 npn

    Abstract: 2N3904 2N3906 transistor NPN 2N3904 UTC2N3904
    Text: UTC 2N3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES *Collector-Emitter Voltage: VCEO=40V *Collector Dissipation: Pc max =625mW *Complementary to 2N3906 1 TO-92 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)


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    2N3904 625mW 2N3906 QW-R201-027 2n3904 npn 2N3904 2N3906 transistor NPN 2N3904 UTC2N3904 PDF

    2N3906L

    Abstract: 2N3906-G 2N3906L-T92-K
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N3906 PNP EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION „ FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: Pc MAX =625mW * Complementary to UTC 2N3904 1 TO-92 „ ORDERING INFORMATION Ordering Number


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    2N3906 625mW 2N3904 2N3906L-T92-B 2N3906G-T92-B 2N3906L-T92-K 2N3906G-T92-K 2N3906L-T92-R 2N3906G-T92-R QW-R201-028 2N3906L 2N3906-G PDF

    2n3997

    Abstract: 2N3996 9012 transistor Transistor 9012 ax 2n3999
    Text: TYPES 2N3996, 2N3997, 2N3998, 2N3999 N-P-N EPITAXIAL PLANAR SILICON POWER TRANSISTORS FOR HIGH-SPEED POWER SWITCHING APPLICATIONS 3D CO H m C < < — rr* 2 rn £ to m m j • 30 W at 100°C Case Temperature ° ¡ z C/3 CO m 7 it -•Io yn 18 m tri n ? O N


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    2N3996, 2N3997, 2N3998, 2N3999 2N3997) T0-11I 2N3996 2N399lin 2n3997 9012 transistor Transistor 9012 ax PDF

    2n5385

    Abstract: 2N5384
    Text: TYPES 2N5384, 2N5385 P-N-P EPITAXIAL PLANAR SILICON POWER TRANSISTORS FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS C £ DESIGNED FOR COMPLEMENTARY USE WITH 2N3996 AND 2N3998 • 30 W at 100°C Case Temperature • Typ t on of 160 ns at 2 A I c


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    2N5384, 2N5385 2N3996 2N3998 T0-111 2N5384 PLANE--10 2N5385 2N5384 PDF

    2N3994

    Abstract: No abstract text available
    Text: B8 9 -9 7 2N3994, 2N3994A P-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • CHOPPERS • HIGH SPEED COMMUTATORS Absolute maximum ratings at Ta = 25°C Reverse Gate Source Voltage Reverse Gate Drain Voltage 25 V 25 V Continuous Forward Gate Current Continuous Device Power DIssipation


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    2N3994, 2N3994A 2N3994 2N3994 PDF

    NPD5566

    Abstract: npd5565 NPD5566 Dual jfets 2N6485 2N3955 NATIONAL SEMICONDUCTOR NP05564 npds5564 2N5565 2N5906 NPD8303
    Text: Dual JFETs bSQ1130 DO^^SDS bSO • NSCS NATL SEMICOND DISCRETE N Channel Vp Device G* (nimho) (V) Min Max M in M ax V q s i -2 VOS (m V) M ax Drift (jxV/C) A V es Max Match G* Match % % •dss Package 2N3955 1 4.5 1 3 10 25 5 5 TO-71 2N3956 1 4.5 1 3 15


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    bSQ1130 2N3955 2N3956 2N3958 2N5197 2N5564 2N5565 2N5566 2N5906 2N5908 NPD5566 npd5565 NPD5566 Dual jfets 2N6485 2N3955 NATIONAL SEMICONDUCTOR NP05564 npds5564 NPD8303 PDF

    2n3966

    Abstract: transistor 2sk CRS15
    Text: rr PHILIPS INTERNATIONAL MIE D B 711GÛ2b 0GEb3MS A ? B1 P H I N 2N3966 T -3 S -2 5 ' N-CHANNEL SILICON FET Symmetrical n-channel, depletion type, planar epitaxial junction field-effect transistor in a T O -7 2 metal envelope w ith the shield lead connected to the case. The transistor is suitable in a variety o f


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    2N3966 -T-3S-25' aTO-72 002b34fl T-35-25 2n3966 transistor 2sk CRS15 PDF

    PN4122

    Abstract: 2N3905 2N3906 2N4125 2N4126 MPS6518 PN4121 PN4917 2N3906 TO-92
    Text: This PNP Transistors Material PNP General Purpose Amplifiers and Switches continued V Copyrighted Device No. Case Style 2N3905 TO-92 (92) By 2N3906 TO-92 (92) CBO V CEO V (V) Min (V) Min (V) Min 40 40 5 40 40 V CE(SAT) ’c es* EBO 'C B 0 @ V CB (nA) Max


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    2N3905 2N3906 2N4125 2N4126 MPS6518 PN4121 PN4122 PN4917 2N3906 TO-92 PDF

    MMBT3906

    Abstract: No abstract text available
    Text: 2N3906 / MMBT3906 / PZT3906 PNP General-Purpose Amplifier Description This device is designed for general-purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E TO-92 SOT-23 SOT-223 B Mark:2A


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    2N3906 MMBT3906 PZT3906 2N3906 MMBT3906 OT-23 OT-223 2N3906BU PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2N3904 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information Capable of 625mW of Power Disspation and 200mA Ic


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    2N3904 625mW 200mA PDF

    2N3906

    Abstract: 2n3906 sot23
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N3906 Features • Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information


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    2N3906 600mW 200mA 2N3906 2n3906 sot23 PDF

    TO111

    Abstract: TO61 U 114
    Text: G27 ELECTRONICS, INC. \ -15 COLLECTOR CURRENT = 10 AM PS NPN TYPES— ConWnued C ue VCBO Volt 2N3920 2N4070 2N4071 2M 150 JAN 2N4150 JT X • ÎN4150 2N4301 2N4347 2N4348 2N5006 T O -3 T O -3 T O -3 T O -5 T O -5 120 120 200 100 100 60 100 150 80 80 6 8


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    O-111 O-111 TO111 TO61 U 114 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N3906 PNP EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION  FEATURES * Collector-Emitter Voltage: VCEO=40V * Complementary to UTC 2N3904  ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 2N3906L-AB3-R


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    2N3906 2N3904 2N3906L-AB3-R 2N3906G-AB3-R OT-89 2N3906L-T92-B 2N3906G-T92-B 2N3906L-T92-K 2N3906G-T92-K PDF

    2N3917

    Abstract: No abstract text available
    Text: 2N3917 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    2N3917 O204AA) 31-Jul-02 2N3917 PDF