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    BSQ1130 Search Results

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    NPD5566

    Abstract: npd5565 NPD5566 Dual jfets 2N6485 2N3955 NATIONAL SEMICONDUCTOR NP05564 npds5564 2N5565 2N5906 NPD8303
    Text: Dual JFETs bSQ1130 DO^^SDS bSO • NSCS NATL SEMICOND DISCRETE N Channel Vp Device G* (nimho) (V) Min Max M in M ax V q s i -2 VOS (m V) M ax Drift (jxV/C) A V es Max Match G* Match % % •dss Package 2N3955 1 4.5 1 3 10 25 5 5 TO-71 2N3956 1 4.5 1 3 15


    OCR Scan     		PDF bSQ1130 2N3955 2N3956 2N3958 2N5197 2N5564 2N5565 2N5566 2N5906 2N5908 NPD5566 npd5565 NPD5566 Dual jfets 2N6485 2N3955 NATIONAL SEMICONDUCTOR NP05564 npds5564 NPD8303

    MMBF4119

    Abstract: PN4118 MMBF4117 MMBF4118 PN4117 PN4119
    Text: e? S e m i c o n d u c t o r " PN4117 PN4118 PN4119 MMBF4117 MMBF4118 MMBF4119 SOT-23 Mark: 6 1 A /6 1 C /6 1 E N-Channel Switch T h is d e v ic e is d e sig n e d for low current D C an d a u d io app licatio ns. T h e s e d e v ic e s p rovide ex ce lle n t p erform an ce a s input s ta g e s for


    OCR Scan     		PDF PN4117 PN4118 PN4119 MMBF4117 MMBF4118 MMBF4119 OT-23 G1A/61C/61E S01130 MMBF4119 PN4119

    NDT452P

    Abstract: No abstract text available
    Text: National Semiconductor" June 1996 NDT452P P-Channel Enhancement Mode Fi Effect Transistor Features General Description These P-Channel enhancem ent m od e p o w e r field effect transistors are produced using N ational's proprietary, h ig h cell density, DMOS tech no lo g y.


    OCR Scan     		PDF NDT452P 125-c b501130 NDT452P

    S8302

    Abstract: S8303 NPDS8301 NPDS8302 NPDS8303
    Text: S e m i c o n d u c t o r " & NPDS8301 NPDS8302 NPDS8303 D2 s2 S O -8 * * S1 D1 N-Channel General Purpose Dual Amplifier Sourced from P rocess 83. Absolute Maximum Ratings* Symbol T A = 25 ° C u n le ss oth e rw ise noted Parameter Value Units V dg Drain-Gate Voltage


    OCR Scan     		PDF NPDS8301 NPDS8302 NPDS8303 bSQ1130 S8302 S8303 NPDS8303

    BCV27

    Abstract: mark ff SC10100
    Text: uc tor ‘ BCV27 Discrete POWER & Signal Technologies BCV27 M a rk : F F NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings*


    OCR Scan     		PDF BCV27 bS01130 bSD113D BCV27 mark ff SC10100

    IR 444 H

    Abstract: f 1405 zs FDLL400 FDLL444 DIODE marking 327 fdh 444 diode
    Text: ’ FDH/FDLL 400 / 444 C O L O R 8 A N D M AR K IN G D EV ICE FD LL400 FD LL444 1 ST B A N D 2N D BAWD BRO W N BRO W N V IO L E T GRAY L L-3 4 D O -3 5 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL High Voltage General Purpose Diode


    OCR Scan     		PDF LL-34 DO-35 MMBD1401-1405 FDWFDLL444 FDWFDLL400 FDHVFDLL444 FDH/FDLL400 FDH/FDLL444 IR 444 H f 1405 zs FDLL400 FDLL444 DIODE marking 327 fdh 444 diode

    2n5461

    Abstract: 2N5462 2N5461 equivalent 2N5460 Low noise audio amplifier MMBF5460 mmbf5461
    Text: S e m i c o n d u c t o r " MMBF5460 MMBF5461 2N5460 2N5461 2N5462 SOT-23 Mark: 6E /61U P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.


    OCR Scan     		PDF 2N5460 2N5461 2N5462 MMBF5460 MMBF5461 2N5462 2N5461 equivalent Low noise audio amplifier mmbf5461

    NDT451AN

    Abstract: u1130
    Text: July 1996 National Semiconductor" N D T451AN N-Channel Enhancement Mode Field Effect Transistor F e a tu re s G e n e ra l D e s c rip tio n These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology,


    OCR Scan     		PDF NDT451AN OT-223 bSQ1130 NDT451AN u1130

    NDS0605

    Abstract: No abstract text available
    Text: National Semiconductor' April 19 95 NDS0605 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel e nhancem ent m o d e p o w e r field effect tra n sisto rs are produced using N ational's pro p rie ta ry, high cell density, DMOS technology.


    OCR Scan     		PDF NDS0605 bSD1130 NDS0605

    2N3563

    Abstract: se5020 MPS6544 MPS-6544 SE5023 2N347B 2n3600 tis86 MPS6547 2N2857
    Text: NPN Transistors VCES* VCBO V Min Vceo (V) Min v EBO (V) Min 2N2857 TO-72 30 15 2.5 2N3478 TO-72 30 15 ' CB0 Vcr <"A) @ “ Max 11 *>FE @ >C & Vce Min Max (mA) (V) 10 15 30 2 20 1 25 150 150 3 2 VCE(SAT) VßE(SAT) . (V) @ (V) & Max Min Max < "*> Cob/Cfo (PF)


    OCR Scan     		PDF 2N2857 2N347B 2N3600 2N3932 2N3933 2N4259 MPSH34 TIS86 TIS87 MPS6540 2N3563 se5020 MPS6544 MPS-6544 SE5023 MPS6547

    mpsa92 "sot23"

    Abstract: mpsa92
    Text: MPSA92 / MMBTA92 / PZTA92 Discrete POWER & Signal Technologies National e ? Semiconductor~ MMBTA92 MPSA92 PZTA92 SOT-23 SOT-223 Mark: 2D PNP High Voltage Amplifier This device is designed for high voltage driver applications. Sourced from Process 76. Absolute Maximum Ratings*


    OCR Scan     		PDF MPSA92 MMBTA92 PZTA92 MPSA92 MMBTA92 OT-23 OT-223 bSQ113D DD407 mpsa92 "sot23"

    NDH831N

    Abstract: No abstract text available
    Text: National Semiconductor~ July 1 9 9 6 NDH831N N-Channef Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDH831N 125-C bSD1130 NDH831N

    ic nn 5198 k

    Abstract: nn 5198 k Transistor C 5196 fcm 10.7 mhz transistor s34 ic nn 5198 r Transistor C 5198 MMBTH11 MPSH11 Q100
    Text: I MMBTH11 Discrete P O W ER & S ig n a l Technologies National MPSH11 Semiconductor'“ MPSH11 NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 fiA to 10 mA range to 300 MHz, and low frequency drift common-base


    OCR Scan     		PDF MPSH11 MMBTH11 b5D1130 ic nn 5198 k nn 5198 k Transistor C 5196 fcm 10.7 mhz transistor s34 ic nn 5198 r Transistor C 5198 MMBTH11 MPSH11 Q100

    PN3640

    Abstract: No abstract text available
    Text: u c to r PN3640 MMBT3640 PN3640 / MMBT3640 D iscrete POW ER & S ig n a l Technologies E C TO-92 SOT-23 BE B Mark: 2J PNP Switching Transistor T h is d e v ic e is d es ig n e d fo r v e ry high s p e e d satu ra te sw itching at co lle c to r cu rre n ts to 1 0 0 m A . S o u rc e d fro m P ro c e s s 6 5 . S e e


    OCR Scan     		PDF PN3640 MMBT3640 PN3640 OT-23