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    MMBTH10

    Abstract: t-31-21 MMBTA92 MMBTH11 MPSH10 MPSH11 MPSW92 T3121 MPS-H10 national
    Text: NATL SEMICOND HE DISCRETE D I bS01130 0Q37273 7 | National Semiconductor <n T -3 I-I7 £ IO < ro MPSA92 MPSW92 MMBTA92 I<o ro TO-236 SOT-23 TL/G/10100-5 PNP High Voltage Amplifier Electrical Characteristics Ta Symbol = 25°C unless otherwise noted Parameter


    OCR Scan     		PDF MPSW92 bS01130 0Q37273 r-31-n MMBTA92 TL/G/10100-1 O-226AE O-236 OT-23) TL/G/10100-5 MMBTH10 t-31-21 MMBTA92 MMBTH11 MPSH10 MPSH11 MPSW92 T3121 MPS-H10 national

    Untitled

    Abstract: No abstract text available
    Text: NATL SEMICOND DISCRETE bflE D • bS01130 003^521 fiT3 » N S C S VcEQ(HSt) (Volts) Min 32 Devices Min BCW33 100 BCX58 100 NPN PMP BCX78 30 2N2222 mA NF (dB) Max Package I’ d (Amb) (mW) @25°C Max mA (MHz) Min 420 800 2.0 300 Typ 10 3.0 TO-236* 350 120


    OCR Scan     		PDF BCW33 BCX58 BCX78 bS01130 2N6726 O-236* T0-92 2N2222 2N3300 2N3302

    NATIONAL SEMICONDUCTOR catalog

    Abstract: MMBF4119
    Text: bflE ]> • bS01130 □ D 3 ciSDM 714 « N S C S JFET Ultra Low Input Current Amplifiers NATL SEMICOND DISCRETE N Channel V p @ V DS lD Device MMBF4117 PN4117 2N4118 MMBF4118 MMBF4119 2N4117A PN4117A 2N4118A (V) Mi« 40 40 40 40 40 40 40 40 ill b v gss 10


    OCR Scan     		PDF bS01130 MMBF4117 PN4117 2N4118 MMBF4118 MMBF4119 2N4117A PN4117A 2N4118A O-236* NATIONAL SEMICONDUCTOR catalog

    bc848 to 92

    Abstract: 2n2222 surface mount 2N2222 T0-92 2n2222 national 2n2222 2N2222 t0 39 2N3704 NATIONAL SEMICONDUCTOR 2N3302 2N4123 2N6714
    Text: NATL SEMICOND DISCRETE bflE T> • bS01130 003^521 & T3 General Purpose Amplifiers and Switches (continued) NSC 5 w ■o' D e v ic e s VcE0(n»l> (V o lts ) NPN 32 30 (dB ) Package I’ d (Amb) (m W ) M ax 3 0 0 Typ 10 3.0 TO -236* 350 2.0 125 10 6.0 T 0 -9 2 (9 7 )


    OCR Scan     		PDF LS01130 BCW33 O-236* BCX58 T0-92 BCX78 2N2222 2N3300 2N3302 2N3704 bc848 to 92 2n2222 surface mount 2N2222 T0-92 2n2222 national 2n2222 2N2222 t0 39 2N3704 NATIONAL SEMICONDUCTOR 2N3302 2N4123 2N6714

    IR 30 D1

    Abstract: BAX17 FDH444 1N3070 1N625 1N626 1N627 1N628 1N629 1N658
    Text: SEMICOND DISCRETE HE D | bS01130 High Voltage Diodes Glass Package Device No. Package No. Vrrm V Min 1N625 DO-35 30 * Ir nA @ Max Vr V VF V 1000 20 1.5 Min Max If mA Ü0 3 ? 0 a 2 T g T-01-01 C pF Max 4.0 •rr ns Max Test Cond. Proc. No. 1000 (Note 1)


    OCR Scan     		PDF b5Oil0037002 1N625 DO-35 1N626 1N627 1N628 1N629 IR 30 D1 BAX17 FDH444 1N3070 1N658

    MMBT4402

    Abstract: 2N2907 SOT-23 tn2905 PN4121 TIS97 pn4122 TN2219A MARKING FY T0-92 2N2907 TO-92
    Text: bflE T> m bS01130 □□3TS2D General Purpose Amplifiers and Switches continued Devices V CEO(sutt) 40 f*FE lc (Volts) Min lC Min Max mA PN3567 500 40 120 PN3569 500 100 TIS97 200 TN2219A 500 NPN PNP NATL SENICOND (DISCRETE) fT @ lc (mA) Max NF (dB) Max


    OCR Scan     		PDF bS01130 PN3567 T0-92 PN3569 TIS97 TN2219A T0-237 2N2904 2N2905 MMBT4402 2N2907 SOT-23 tn2905 PN4121 TIS97 pn4122 TN2219A MARKING FY 2N2907 TO-92

    LC 300-S

    Abstract: 2N6717 MPS6717
    Text: NATL S EM I C O N D H E DISCRETE D • bS01130 D0375b3 I 4 I | ' National Semiconductor Jl A 2N6717 I Ml - ro T'3 3 'OS M PS6717 T O -2 J 7 llllll BC TO -226AE TL/G/10100-8 TL/G/10100-4 NPN General Purpose Amplifier Electrical Characteristics ta = 25°c unless otherwise noted


    OCR Scan     		PDF bS01130 D0375b3 2N6717 MPS6717 TUG/10100-8 O-226AE TL/G/10100-4 MPS6717 LC 300-S 2N6717

    TIS90

    Abstract: MPS6566 TIS97
    Text: NATL SEMICOND DISCRETE 22E D • bS01130 D03777M 7 ■ NPN General Purpose Transistors by Ascending Vceo (continued) • H,e Ft (MHz) Min Vceo (V) VCbo(V) Min Min Min Max (mA/V) PN5816 TIS90 TIS92 TIS97 TN2218A TN2219A 40 40 40 40 40 40 50 40 40 100 100


    OCR Scan     		PDF bS01130 D03777M PN5816 TIS90 TIS92 TIS97 TN2218A TN2219A 2N2270 2N2586 MPS6566

    2N2210

    Abstract: TIS92 TN2218A transistor 2N2210 2N3827 PN3694 TIS90 2N2270 2N2586 2N5962
    Text: NATL SEMICOND DISCRETE 5SE D • bS01130 D037774 7 ■ NPN General Purpose Transistors by Ascending Vceo (continued) Vceo(V) Vcbo (V) Min Min Min Max (mA/V) PN5816 TIS90 TIS92 TIS97 TN2218A TN2219A 40 40 40 40 40 40 50 40 40 100 100 100 250 40 100 200 300


    OCR Scan     		PDF bS01130 D037774 PN5816 TIS90 TIS92 TIS97 TN2218A O-237 TN2219A 2N2210 transistor 2N2210 2N3827 PN3694 2N2270 2N2586 2N5962

    MMBT2904

    Abstract: MMBT2904A MMBT3905 MMBT4916 MMBT3638A MMBT3702 MMBT3703 MMBT4402 MMBT4403 MMBT5143
    Text: This s S S S ä d U C t o Surface Mount Transistors r General Purpose Amplifiers and Switches—PNP VCBO* VcEO VEB0 V (V) (V) Min Min Min By 40 5 MMBT2904A TO-236 (49) 60 40 5 MMBT2905 TO-236 (49) 60 40 5 MMBT2905A TO-236 (49) 60 40 5 MMBT2906 TO-236 (49)


    OCR Scan     		PDF T-29-OI 03714S T-37-01 T-29-01 MMBT2904 MMBT2904A MMBT3905 MMBT4916 MMBT3638A MMBT3702 MMBT3703 MMBT4402 MMBT4403 MMBT5143

    J111 national

    Abstract: J112 J113 25CC J111 MMBFJ111 MMBFJ112 MMBFJ113 MARK 6C SOT-23 k20a
    Text: S e m i c o n d u c t o r " J111 J112 J113 G MMBFJ111 MMBFJ112 MMBFJ113 T O -9 2 D M ark: 6 P / 6 R / 6 S N-Channel Switch T his device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers. Sourced from Proce ss 51.


    OCR Scan     		PDF MMBFJ111 MMBFJ112 MMBFJ113 OT-23 D0M0T33 J111 national J112 J113 25CC J111 MMBFJ113 MARK 6C SOT-23 k20a

    diode 8109

    Abstract: DDH0312 NDB7061L NDP7061L W9 diode
    Text: MCE N a t i o n a l Semiconductor • J u n e 1996 " NDP7061L/ NDB7061L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using


    OCR Scan     		PDF NDP7061L/ NDB7061L bSD113D 004031b bS01130 diode 8109 DDH0312 NDP7061L W9 diode

    NPN RF Amplifier

    Abstract: y-parameter MMBTH20 MPSH20 U407
    Text: MPSH201MMBTH20 Discrete POW ER & Signal Technologies National S e m i c o n d u c t o r “ MMBTH20 MPSH20 NPN RF Transistor T h is d e v ic e is d e s ig n e d for g e n e ra l R F am plifier a n d m ixer ap p lica tio n s to 25 0 M H z w ith co lle cto r curren ts in the 1.0 m A


    OCR Scan     		PDF LSG113Ã b501130 NPN RF Amplifier y-parameter MMBTH20 MPSH20 U407

    027Q

    Abstract: NDS336P
    Text: M ay 1996 National & Semiconductor PRELIMINARY NDS336P P-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These P-Channel lo g ic level enhancem ent m ode pow er fie ld effect tran sisto rs are produced using N ationals proprietary, high cell density, DMOS


    OCR Scan     		PDF NDS336P --125-C LSD1130 027Q

    27E SOT-23

    Abstract: 27E 9 sot23 CK200 501MT BCW68G T092
    Text: BCW68G ^ Discrete POWER & Signal Technologies Æ^m N a t i o n a l Semiconductor' BCW68G PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at currents to 500 mA. Sourced from Process 63. A b s o lu t e


    OCR Scan     		PDF BCW68G OT-23 b5D1130 LS01130 27E SOT-23 27E 9 sot23 CK200 501MT BCW68G T092

    MMBF4119

    Abstract: PN4118 MMBF4117 MMBF4118 PN4117 PN4119
    Text: e? S e m i c o n d u c t o r " PN4117 PN4118 PN4119 MMBF4117 MMBF4118 MMBF4119 SOT-23 Mark: 6 1 A /6 1 C /6 1 E N-Channel Switch T h is d e v ic e is d e sig n e d for low current D C an d a u d io app licatio ns. T h e s e d e v ic e s p rovide ex ce lle n t p erform an ce a s input s ta g e s for


    OCR Scan     		PDF PN4117 PN4118 PN4119 MMBF4117 MMBF4118 MMBF4119 OT-23 G1A/61C/61E S01130 MMBF4119 PN4119

    FDS01503

    Abstract: FDS01403 1n457a equivalent 1n625 equivalent FDS01502 1N457A J 1N3070 equivalent FDS01401 FDS01501 1N459 equivalent
    Text: This Material National Semiconductor Surface Mount Diodes <S> m 2 t-i General Purpose & Specialty Diodes O Device Description Pkg. No. Pin Out Bv V Min •r (nA) @ Max Vr V Vf <V> Max If mA mA C PF Max to­ ns Max Test Cond. FDS01000 FAMILY Proc. Family


    OCR Scan     		PDF D113D T-03-01 FDS01200 FDS01400 FDS01500 FDS01700 1N914 1N4149 FDH600 1N625 FDS01503 FDS01403 1n457a equivalent 1n625 equivalent FDS01502 1N457A J 1N3070 equivalent FDS01401 FDS01501 1N459 equivalent

    NDT452P

    Abstract: No abstract text available
    Text: National Semiconductor" June 1996 NDT452P P-Channel Enhancement Mode Fi Effect Transistor Features General Description These P-Channel enhancem ent m od e p o w e r field effect transistors are produced using N ational's proprietary, h ig h cell density, DMOS tech no lo g y.


    OCR Scan     		PDF NDT452P 125-c b501130 NDT452P

    NDT2955

    Abstract: ACAA TRANSISTOR
    Text: June 1996 Nat ionaI Sem iconductor" NDT2955 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancem ent m od e p o w e r field effect tran sisto rs are produced using N ational's proprietary, high cell density, DMOS te chnology. This


    OCR Scan     		PDF NDT2955 125-C SD113G 0D4014D NDT2955 ACAA TRANSISTOR

    NDP506A

    Abstract: zener diode 4B3 NDB506B NDB506A NDP506B
    Text: National Semiconductor M a y 19 95 " NDP506A / NDP506B NDB506A / NDB506B N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDP506A NDP506B NDB506A NDB506B 125-C bSD113D 0D4D21D zener diode 4B3 NDB506B

    Tf 227

    Abstract: MMBT2369A MMPQ2369 PN2369A SOIC-16
    Text: PN2369A MMBT2369A MMPQ2369 Discrete P O W E R & S ig n a l Technologies National I Semiconductor' MMPQ2369 MMBT2369A I PN2369A SOT-23 B SOIC-16 Mark: 1S NPN Switching Transistor T h is d e v ic e is d e s ig n e d for high s p e e d saturatio n sw itching a t collector


    OCR Scan     		PDF PN2369A MMBT2369A MMPQ2369 OT-23 SOIC-16 bS01130 0040bc Tf 227 MMBT2369A MMPQ2369 PN2369A SOIC-16

    MMBT2907A

    Abstract: MMPQ2907 NMT2907 PN2907A PZT2907A T092
    Text: PN2907A I MMBT2907A / MMPQ2907/ NMT2907 I PZT2907A D iscrete P O W E R & S ig n a l Technologies National e t S e m i c o n d u c t o r ' " MMBT2907A PN2907A SOT-23 PZT2907A B SOT-223 Mark: 2F NMT2907 MMPQ2907 SOIC-16 ° PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier


    OCR Scan     		PDF PN2907A MMBT2907A PZT2907A OT-23 OT-223 MMPQ2907 NMT2907 bS0113D DD40ti30 bS01130 MMPQ2907 NMT2907 PN2907A PZT2907A T092

    biss 0001

    Abstract: NDH832P 006CI
    Text: J k J National S emi co n d u c t o r " NDH832P P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDH832P b501130 biss 0001 NDH832P 006CI

    NDS8435

    Abstract: No abstract text available
    Text: & N a t io nal Semiconductor" M ay 19 96 NDS8435 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDS8435 028i2 50113D NDS8435