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    NDS8435 Search Results

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    NDS8435 Price and Stock

    UMW NDS8435A

    MOSFET P-CH 30V 7.9A 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NDS8435A Cut Tape 3,000 1
    • 1 $0.58
    • 10 $0.387
    • 100 $0.58
    • 1000 $0.18771
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    NDS8435A Digi-Reel 3,000 1
    • 1 $0.58
    • 10 $0.387
    • 100 $0.58
    • 1000 $0.18771
    • 10000 $0.18771
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    NDS8435A Reel 3,000 3,000
    • 1 -
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    • 10000 $0.16352
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    onsemi NDS8435

    MOSFET P-CH 30V 7A 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NDS8435 Reel 2,500
    • 1 -
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    NDS8435 Cut Tape 1
    • 1 $2.07
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    Rochester Electronics LLC NDS8435A

    MOSFET P-CH 30V 7.9A 8SOIC
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    DigiKey NDS8435A Tube 333
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    onsemi NDS8435A

    MOSFET P-CH 30V 7.9A 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NDS8435A Tube 2,500
    • 1 -
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    • 10000 $0.45638
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    Fairchild Semiconductor Corporation NDS8435A

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    Bristol Electronics NDS8435A 4,271
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    Quest Components NDS8435A 4,842
    • 1 $1.4503
    • 10 $1.4503
    • 100 $1.4503
    • 1000 $0.6671
    • 10000 $0.6091
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    NDS8435A 1,678
    • 1 $1.55
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    • 100 $1.55
    • 1000 $0.62
    • 10000 $0.5425
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    NDS8435A 1,040
    • 1 $0.933
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    • 1000 $0.3732
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    NDS8435A 11
    • 1 $2.8
    • 10 $2.1
    • 100 $2.1
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    Rochester Electronics NDS8435A 127,265 1
    • 1 $0.8667
    • 10 $0.8667
    • 100 $0.8147
    • 1000 $0.7367
    • 10000 $0.7367
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    NDS8435 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NDS8435 Fairchild Semiconductor Single P-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS8435 National Semiconductor Single P-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS8435 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    NDS8435A Fairchild Semiconductor Single P-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS8435A Fairchild Semiconductor Single P-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDS8435A Fairchild Semiconductor Single P-Channel Enhancement Mode Field Effect Tra Original PDF
    NDS8435A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    NDS8435A Fairchild Semiconductor Single P-Channel Enhancement Mode Field Effect Transistor Scan PDF
    NDS8435A_NL Fairchild Semiconductor Single P-Channel Enhancement Mode Field Effect Transistor Original PDF

    NDS8435 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    NDS8435A

    Abstract: No abstract text available
    Text: March 1997 NDS8435A Single P-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original
    NDS8435A NDS8435A PDF

    Untitled

    Abstract: No abstract text available
    Text: March 1997 NDS8435A Single P-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original
    NDS8435A PDF

    NDS8435A

    Abstract: No abstract text available
    Text: March 1997 NDS8435A Single P-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original
    NDS8435A NDS8435A PDF

    NDS8435A

    Abstract: 79A8
    Text: N December 1996 PRELIMINARY NDS8435A Single P-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


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    NDS8435A NDS8435A 79A8 PDF

    NDS8435

    Abstract: No abstract text available
    Text: N May 1996 NDS8435 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored


    Original
    NDS8435 NDS8435 PDF

    CBVK741B019

    Abstract: F011 F63TNR F852 L86Z NDS8435 9959
    Text: May 1996 NDS8435 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high


    Original
    NDS8435 CBVK741B019 F011 F63TNR F852 L86Z NDS8435 9959 PDF

    NDS8435

    Abstract: No abstract text available
    Text: May 1996 NDS8435 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high


    Original
    NDS8435 NDS8435 PDF

    NDS8435

    Abstract: No abstract text available
    Text: May 1996 NDS8435 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high


    Original
    NDS8435 NDS8435 PDF

    CBVK741B019

    Abstract: F011 F63TNR F852 FDS9953A L86Z NDS8435A
    Text: March 1997 NDS8435A Single P-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original
    NDS8435A CBVK741B019 F011 F63TNR F852 FDS9953A L86Z NDS8435A PDF

    Untitled

    Abstract: No abstract text available
    Text: 19-1293; Rev 1; 11/07 MAX1649 Evaluation Kit The MAX1649 evaluation kit EV kit provides a regulated 5V output voltage from a 5.5V to 16.5V source. The circuit is configured to deliver up to 1.5A of output current using all surface-mount components. The MAX1649’s low quiescent current and unique currentlimited PFM control scheme provide high efficiency


    Original
    MAX1649 MAX1649â MAX1651 MAX649, MAX651, MAX652. MAX1649/MAX1651 MAX649/MAX651, PDF

    TCA780

    Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
    Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP


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    1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G PDF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


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    element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor PDF

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


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    CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l PDF

    mosfet cross reference

    Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
    Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P


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    2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L PDF

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original
    5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent PDF

    STM9435

    Abstract: AP4411 ao3411 EQUIVALENT STM8405 AP40N03H AP4936M stm4532 FDD6685 AP9960M APEC
    Text: South Sea Semiconductor Cross Reference Guide Competitor SSS Competitor Part Number Part Number STU3055L2 APM2034NU ANPEC STU4030NL APM2512NU ANPEC STU4030NL APM3011NU ANPEC STU3030PL APM3020PU ANPEC APM3023N ANPEC STU3030NL APM4210K ANPEC SDM4410 APM4220K ANPEC


    Original
    STU3055L2 APM2034NU STU4030NL APM2512NU APM3011NU STU3030PL APM3020PU APM3023N STU3030NL STM9435 AP4411 ao3411 EQUIVALENT STM8405 AP40N03H AP4936M stm4532 FDD6685 AP9960M APEC PDF

    NDS8435

    Abstract: No abstract text available
    Text: & N a t io nal Semiconductor" M ay 19 96 NDS8435 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan
    NDS8435 028i2 50113D NDS8435 PDF

    8435a

    Abstract: No abstract text available
    Text: M a rc h 1 9 9 7 SEM ICONDUCTO R tm NDS8435A Single P-Channel Enhancement Mode Field Effect Transistor Features General Description SO-8 P-Channel enhancement mode power field effect • -7.9 A, -30 V. R ^ , = 0.023 O @ VGS = -10 V R ^ , = 0.035 0 @ V GS= -4.5V.


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    NDS8435A S8435A 8435a PDF

    NDS8435A

    Abstract: No abstract text available
    Text: March 1997 SEMICDNDUCTOR tm NDS8435A Single P-Channel Enhancement Mode Field Effect Transistor Features General Description S O -8 P -C h a n n e l enhancem ent m ode power field effect • -7 .9 A, -3 0 V . R DS ON = 0 .0 2 3 @ V QS = -1 0 V R DS(ON) = 0 .0 3 5


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    NDS8435A NDS8435A PDF

    Untitled

    Abstract: No abstract text available
    Text: FAIRCHILD SEMICONDUCTOR May 1996 tm NDS8435 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, - high cell density, DMOS technology. This very high


    OCR Scan
    NDS8435 PDF

    Untitled

    Abstract: No abstract text available
    Text: RAIRCHII-D SEM IC ONDUCTO R March 1997 tm NDS8435A Single P-Channel Enhancement Mode Field Effect Transistor General Description SO-8 P-Channel enhancement Features mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


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    NDS8435A NDS8435A PDF

    S-8435

    Abstract: No abstract text available
    Text: F A I R C H I L D M aV 1996 SEM IC ONDUCTO R tm NDS8435 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 P-Channel enhancement mode power field effect • -7A, -30V. RDS 0N = 0.028Q @ VGS = -10V RDS(0N) = 0.045Q @ VGS = -4.5V.


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    NDS8435 S8435 S-8435 PDF

    Untitled

    Abstract: No abstract text available
    Text: Na t i o n a l Semiconductor May 1996 NDS8435 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


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    NDS8435 PDF

    601lt

    Abstract: Complementary MOSFET Half Bridge NDS351AN MDs9933 NDS331N NDS356 NDS9936 NDS9952A FDV302P
    Text: Discrete Power and Signal Technologies Fairchild Sem iconductor Selection Guides Surface Mount Power MOSFETs Part Num ber v 3S IV _ J « L 'd A) _ " P i ' I I ' (W ) ¡Remarks P art V0S Num ber (V) iV t M » W w t u iv * » 45V Id (A) 2IV i Po j (W ) I Remarks |


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    S8426A* NQS8426t NDS8425 NDS8926 NDS9925A NDS8410A NDS8410Î NDS9410A NOS8936 NDS9936 601lt Complementary MOSFET Half Bridge NDS351AN MDs9933 NDS331N NDS356 NDS9952A FDV302P PDF