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    Anytek Technology Corporation Ltd EQT31210000G

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    Essentra Components 27XT3121000

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    Essentra Components XT3121000A

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    Essentra Components 27XT3121250

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    Essentra Components XT3121500A

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    T3121 Datasheets Context Search

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    MMBTH10

    Abstract: t-31-21 MMBTA92 MMBTH11 MPSH10 MPSH11 MPSW92 T3121 MPS-H10 national
    Text: NATL SEMICOND HE DISCRETE D I bS01130 0Q37273 7 | National Semiconductor <n T -3 I-I7 £ IO < ro MPSA92 MPSW92 MMBTA92 I<o ro TO-236 SOT-23 TL/G/10100-5 PNP High Voltage Amplifier Electrical Characteristics Ta Symbol = 25°C unless otherwise noted Parameter


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    MPSW92 bS01130 0Q37273 r-31-n MMBTA92 TL/G/10100-1 O-226AE O-236 OT-23) TL/G/10100-5 MMBTH10 t-31-21 MMBTA92 MMBTH11 MPSH10 MPSH11 MPSW92 T3121 MPS-H10 national PDF

    Untitled

    Abstract: No abstract text available
    Text: AVANTE< INC EOE D • 0A V A K TEK 1 1 4 1 1 fab 0G0h4afe, T AT-42010 Up to 6 GHz Medium Power Silicon Bipolar Transistor Avantek 100 mil Package Features • • High Output Power: 12.0 dBm typical Pi dB at 2.0 GHz 20.5 dBm typical Pi dB at 4.0 GHz High Gain at 1 dB Compression:


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    AT-42010 PDF

    2929 transistor

    Abstract: t2929 MPSA62 MPSA75 T-31-21 vbe 10v T-29-29 625MW
    Text: S A MS UN G SEMICONDUCTOR INC 14E D I 7^4142 0007370 2 PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR MPSA64 T-29-29 DARLINGTON TRANSISTOR • Collector-Emitter Voltage: Vcta=30V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic


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    mpsa64 625mW MPSA62 T-29-29 100/iA, mpsh17 t-10-fc T-31-21 -100MHz- 2929 transistor t2929 MPSA75 T-31-21 vbe 10v T-29-29 625MW PDF

    avantek

    Abstract: Avantek amplifier AT-41410 T-31-21 Avantek, Inc ic and 4081 AVANTEK oscillator
    Text: AVANTEK Q INC imntt ooobMb3 i 2GE D avantek AT-41410 Up to 6 GHz Low Noise Silicon Bipolar Transistor Z .\ Features • • • • Avantek 100 mil Package Low Noise Figure: 1.6 dB typical at 2.0 GHz 3.0 dB typical at 4.0 GHz High Associated Galn:14.0 dB typical at 2.0 GHz


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    AT-41410 AT-41410 avantek Avantek amplifier T-31-21 Avantek, Inc ic and 4081 AVANTEK oscillator PDF

    AT-41435

    Abstract: transistor K D 2499 transistor 45 f 122 S21E T-31-21 Avantek AT41435 AVANTEK transistor
    Text: AVANTEK I NC 0 A V A N SGE D T E H i m DDOmbT T AT-41435 Up to 6 GHz Low Noise Silicon Bipolar Transistor K ~S >\ - Z . I Features • • • • Avantek 35 micro-X Package • Low Noise Figure: 1.7 dB typical at 2.0 GHz 3.0 dB typical at 4.0 GHz High Associated Gain: 14.0 dB typical at 2.0 GHz


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    AT-41435 transistor K D 2499 transistor 45 f 122 S21E T-31-21 Avantek AT41435 AVANTEK transistor PDF

    avantek microwave

    Abstract: AVANTEK oscillator Avantek UA-152
    Text: AVANTEK INC 20E D Qavantek • lm n b b GDGbMTa b AT-42086 Up to 6 GHz Medium Power Silicon Bipolar Transistor ' P I I -2.1 Avantek 86 Plastic Package Features • High Output Power: 20.5 dBm typical Pi dB at 2.0 GHz • High Gain at 1 dB Compression: 13.5 dB typical Gi dB at 2.0 GHz


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    AT-42086 T-31-21 310-371-87i7or310-371-8478 avantek microwave AVANTEK oscillator Avantek UA-152 PDF

    T4148

    Abstract: AT-41486 AVANTEK transistor Tbb 38 Avantek UA-152
    Text: AVANTEK INC EOE D avan tek • limitt 1 AT-41486 Up to 6 GHz Low Noise Silicon Bipolar Transistor Avantek 86 Plastic Package Features • Low Noise Figure: 1.4 d B typical at 1.0 GHz 1.7 d B typical at 2.0 GHz • High Associated Gain: 18.0 dB typical at 1.0 GHz


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    AT-41486 T4148 AVANTEK transistor Tbb 38 Avantek UA-152 PDF

    SS TRANSISTOR

    Abstract: BF751 t-31-21
    Text: Product specification Philips Semiconductors NPN 6.5 GHz wideband transistor P H ILIP S IN T E R N A T IO N A L £ BF751 S b E D H 711D A E L . 004M R a bT T OWÊt P H IN PINNING FEATURES DESCRIPTION • High power gain PIN • Low noise figure 1 • Gold metallization ensures


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    BF751 711DflSb 004MRab BF751 MSB033 MBB479 7110flgb SS TRANSISTOR t-31-21 PDF

    PSD3-20

    Abstract: PSD5-28
    Text: • ■ ■ Uliw Split Bobbin Power Transformers 115V and 115/230V 50/60Hz T31 and T32 T31 Series:Single 115V Primary T32 SeriesiDual 115/230 V Primary Single Dual Secondary Connections Primary Primary Size Parallel Series P/N P/N VA VAC Arms VAC Arms T31-1-10


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    115/230V 50/60Hz T31-1-10 T31-2-10 T31-6-10 T31-12-10 T32-1-10 T32-2-10 T32-6-10 T32-12-10 PSD3-20 PSD5-28 PDF

    Untitled

    Abstract: No abstract text available
    Text: AVANTEK Q INC 2D E avantek D im n b fc 00Dti4b3 1 AT-41410 Up to 6 GHz Low Noise Silicon Bipolar Transistor T r ' £ i - ‘Z . l Avantek 100 mil Package Features • Low Noise Figure: 1.6 d B typical at 2.0 GHz 3.0 d B typical at 4.0 GHz • High Associated Galn:14.0 dB typical at 2.0 GH z


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    00Dti4b3 AT-41410 AT-41410 band42 PDF

    avantek

    Abstract: AT-42035 Avantek, Inc 321E T-31-21 8v-312 Avantek amplifier 8 12 GHz Avantek amplifier 12.5 sa AVANTEK oscillator
    Text: AVANTEK Q SQE D I NC avantek • i m n t t AT-42035 Up to 6 GHz Medium Power Silicon Bipolar Transistor Avantek 35 micro-X Package Features • • • • • OQObMöT 5 High Output Power: 21.0 dBm typical Pi dB at 2.0 GHz 20.5 dBm typical Pt dB at 4.0 GHz


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    AT-42035 AT-42035 microwave64 avantek Avantek, Inc 321E T-31-21 8v-312 Avantek amplifier 8 12 GHz Avantek amplifier 12.5 sa AVANTEK oscillator PDF

    Transistor SSI 5504 175

    Abstract: transistor b 1238 SSI 5504 175 0507 transistor 0235S2 BFP91A transistor d 1663
    Text: Philips Semiconductors Product specification NPN 6 GHz wideband transistor philips international DESCRIPTION BFP91A SbE ]> 711002b G0453bb bG4 PINNING NPN transistor in hermetically-sealed sub-miniature SOT173 and SOT 173X micro-stripline envelopes. It features


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    BFP91A 711002b G0453bb OT173 BFQ23C. OT173. Transistor SSI 5504 175 transistor b 1238 SSI 5504 175 0507 transistor 0235S2 BFP91A transistor d 1663 PDF

    BFQ23C

    Abstract: BFP91A t-31-21 537D UBB843 BFP91A NPN PHILIPS SOT173
    Text: Philips Semiconductors Product specification NPN 6 GHz wideband transistor philips international DESCRIPTION BFP91A SbE ]> 711002b G0453bb bG4 PINNING NPN transistor in hermetically-sealed sub-miniature SOT173 and SOT 173X micro-stripline envelopes. It features


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    BFP91A 711002b 00453bb OT173 OT173X BFQ23C. OT173. D-160 BFQ23C BFP91A t-31-21 537D UBB843 BFP91A NPN PHILIPS SOT173 PDF

    BF199

    Abstract: transistor S73 DD421 transistor BF199 transistor NPN BF199
    Text: BF199 — K - PHILIPS INTERNATIONAL SbE D WË _ J z lt ll


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    BF199 T-31-ZI BF199 transistor S73 DD421 transistor BF199 transistor NPN BF199 PDF

    AVANTEK transistor

    Abstract: lm 3907 Avantek UA-152
    Text: AVANTEK INC Q a v a 2QE D n t e • lm iU b OOQbMbQ 3 I AT-41400 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip k " P 3 .1 -Z I Avantek Chip Outline Features • • • Low Noise Figure: 1.6 dB typical at 2.0 GHz 3.0 dB typical at 4.0 GHz High Associated Gain: 14.5 dB typical at 2.0 GHz


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    AT-41400 AVANTEK transistor lm 3907 Avantek UA-152 PDF

    Avantek amplifier 8 12 GHz

    Abstract: Avantek power amplifier AT-42000-GP4 AVANTEK transistor
    Text: A V A N T E K INC SDE D • limibb G0Db4fl3 4 AT-42000 Up to 6 GHz Medium Power Transistor Silicon Bipolar Transiste Chip avantek Avantek Chip Outline Features • High Output Power: 21.0 dBm typical Pi dB at 2.0 GHz 20.5 dBm typical Pi dB at 4.0 GHz • High Gain at 1 dB Compression:


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    AT-42000 Avantek amplifier 8 12 GHz Avantek power amplifier AT-42000-GP4 AVANTEK transistor PDF

    HXTR3685

    Abstract: HXTR-7111 HXTR-3615 hxtr-3685 HXTR3 HXTR-7111TXV hxtr-7011
    Text: HEWLETT-PACKARD-. CMPNTS SDE D B M447SÖ4 QQOSSbb 3 El T " 31“ /? T-31'21 Low N oise Transistors HXTR-7011 Chip HXTR-7111, TX and TXV HXTR-3615, TX and TXV HXTR-3645, TX and TXV HXTR-3675, TX and TXV HSMX-3635 HSMX-3655 Technical Data Features D escription


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    M447SÃ HXTR-7011 HXTR-7111, HXTR-3615, HXTR-3645, HXTR-3675, HSMX-3635 HSMX-3655 MIL-S-19500, HXTR3685 HXTR-7111 HXTR-3615 hxtr-3685 HXTR3 HXTR-7111TXV PDF

    Untitled

    Abstract: No abstract text available
    Text: 3QE D rz 7 S G H 7^5^237 QD311b3 3 H 1— J^ \ I sgs-thomson Mn lf3miCT «@§_ 2N3137 S- TH OM SO N RF AMPLIFIER DESCRIPTION The 2N3137 is a silicon planar epitaxial NPN tran­ sistor in a TO-39 metal case. It is a primarily de­ signed for application as a Class-C, RF power am­


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    QD311b3 2N3137 2N3137 00311bS T-31-21 PDF

    AT42070

    Abstract: oscillator 77 GHZ Avantek amplifier Avantek power amplifier AT-42070 T-31-21 AVANTEK oscillator
    Text: AVANTEK INC SGE D • im n b b DGDbMTa S AT-42070 Up to 6 GHz Medium Power Silicon Bipolar Transistor * Features Avantek 70 mil Package • .uqu • • • • High Output Power: 21.0 dBm typical Pi dB at 2.0 GHz 20.5 dBm typical PidB at 4.0 GHz High Gain at 1 dB Compression:


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    AT-42070 AT42070 oscillator 77 GHZ Avantek amplifier Avantek power amplifier T-31-21 AVANTEK oscillator PDF

    Asg TRANSISTOR

    Abstract: 008a AT-42086 AT-42086-TR1 T-31-21 Avantek amplifier AVANTEK transistor
    Text: AVANTEK INC EOE D AVANTEK • 11411ht GDGb4Tà AT-42086 Up to 6 GHz Medium Power Silicon Bipolar Transistor Avantek 86 Plastic Package Features • • • • • • b High Output Power: 20.5 dBm typical Pi dB at 2.0 GHz High Gain at 1 dB Compression:


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    11411ht AT-42086 AT-42086 CA95054 Asg TRANSISTOR 008a AT-42086-TR1 T-31-21 Avantek amplifier AVANTEK transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: AVANTEK Q a v aüE D INC a n t e • i i m i h t 0001=4^2 s AT-42070 Up to 6 GHz Medium Power Silicon Bipolar Transistor * k ' Features Avantek 70 mi! Package • High Output Power: 21.0 dBm typical Pi dB at 2.0 GHz 20.5 dBm typical Pi dB at 4.0 GHz • High Gain at 1 dB Compression:


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    AT-42070 T-31-21 PDF

    Untitled

    Abstract: No abstract text available
    Text: AVANTEK EGE INC D 0AVANTEK • l m n t b G00b4fli 5 AT-42035 Up to 6 GHz Medium Power Silicon Bipolar Transistor Avantek 35 micro-X Package Features • High Output Power: 21.0 dBm typical Pi dB at 2.0 GHz 20.5 dBm typical Pi dB at 4.0 GHz • High Gain at 1 dB Com pression:


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    G00b4fli AT-42035 T-42035 effe219 PDF

    Untitled

    Abstract: No abstract text available
    Text: AVANTEK INC 50E D O a v a n tg k lm n tb AT-41472 Up to 1 GHz Low Noise Silicon Bipolar Transistor Avantek TO-72 Package Features • • • • 0G0b47s s Low Noise Figure: 1 .3 dB typical at 0.5 GHz 2.0 dB typical at 1.0 GHz High Associated Gain: 14.0 dB typical at 0.5 GHz


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    AT-41472 0G0b47s AT-41472 PDF

    AT-41472

    Abstract: Avantek amplifier 8 12 GHz AVANTEK transistor AT41472 avantek T-31-21 Avantek, Inc AT414 AVANTEK oscillator
    Text: 50E D AVANTEK INC AVANTEK •limitfa Q0Gb47S S AT-41472 Up to 1 GHz Low Noise Silicon Bipolar Transistor Avantek TO-72 Package Features • • • • Low Noise Figure: 1.3 dB typical at 0.5 GHz 2.0 dB typical at 1.0 GHz High Associated Gain: 14.0 dB typical at 0.5 GHz


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    QGGb47S AT-41472 AT-41472 Avantek amplifier 8 12 GHz AVANTEK transistor AT41472 avantek T-31-21 Avantek, Inc AT414 AVANTEK oscillator PDF