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    Catalog Datasheet MFG & Type Document Tags PDF

    NPD5564

    Abstract: NPD5566 NPD8303 npd5565 2N5565 T071 2N5906 dual jfets NPD5566 Dual jfets
    Text: Dual JFETs • b5D1130 DD^^SDS bSD « N S C S NATL SEHICOND DISCRETE N Channel vP Device (V) Min Max G* VGS1-2 (mmho) Min Max Vos (mV) Max Drift (nV/C) A V bs Max ßfc ■oss Match Match % % Package 2N3955 1 4.5 1 3 10 25 5 5 TO-71 2N3956 1 4.5 1 3 15 50


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    b5D1130 T0-71 T0-78 NPD5564 NPD5566 NPD8303 npd5565 2N5565 T071 2N5906 dual jfets NPD5566 Dual jfets PDF

    NZT6715

    Abstract: TN6715A
    Text: TN6715AI NZT6715 & _ D iscrete P O W E R & S ig n a l Technologies National Se m i ro n d u c I o r " TN6715A NZT6715 SOT-223 NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A.


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    TN6715A O-226 NZT6715 OT-223 b501130 0Cm07Sb b5D1130 NZT6715 TN6715A PDF

    NDS8839H

    Abstract: Complementary MOSFET Half Bridge
    Text: M arc h 1 9 9 6 National Semiconductor ~ NDS8839H Complementary MOSFET Half Bridge General Description Features These Complementary MOSFET half bridge devices are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to


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    NDS8839H bS0113D NDS8839H Complementary MOSFET Half Bridge PDF

    BD371C-10

    Abstract: BD371D BF494 BF936 yc 236 b055 BC338-25 NATIONAL SEMICONDUCTOR BD371B BD371C BD371C-6
    Text: NATL S E M IC O N D H E D IS C R E T E D • tS0 1 1 3 D 0Q371SB fi 1 S -a CM T" O z CM eg Y~ o CM r* ST -f u T-03-01 « e 3 m o o s i o « 0 *c a) /) c o z Sï (/) « fl «?&2 <D » <D o f X a Jr i o Û) 8 S to CO LU o CL k. w o Q. m S's U o o o o o o o o


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    b50113D L5D1130 T-03-01 BD371C-10 BD371D BF494 BF936 yc 236 b055 BC338-25 NATIONAL SEMICONDUCTOR BD371B BD371C BD371C-6 PDF

    DG40B

    Abstract: DY TRANSISTOR PN918
    Text: u c t or" PN918 C MMBT918 TO-92 SOT-23 B M ark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. A b s o lu t e M a x im u m R


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    PN918 MMBT918 PN918 OT-23 bSD113D Q40bQc DG40B DY TRANSISTOR PDF

    FRP1620CC

    Abstract: FRP1610CC FRP1605CC FRP1615CC FRP1640CC FRP1650CC FRP1660CC FRP2005CC FRP2010CC FRP2015CC
    Text: z j m N a S e t m i o i n c a o l n Dual Rectifiers, Common Cathode d u c t o r If Avg. A V TO-220AB (38) 50 10 50 0.95 8 16 FRP1610CC TO-220AB (38) 100 10 100 0.95 8 FRP1615CC T0220A B (38) 150 10 150 0.95 FRP1620CC TO-22ÛAB (38) 200 10 200 FRP1640CC TO-220AB


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    FRP1605CC O-220AB FRP1610CC FRP1615CC FRP1620CC FRP1640CC FRP1650CC FRP1660CC FRP2005CC FRP2010CC FRP2015CC PDF

    BAV70

    Abstract: BAV74 BAV70 ON diode bav70 BAV99
    Text: BAV70 / BAV74 & Discrete POW ER & Signa l Technologies National Semiconductor" BAV70 / 74 High Conductance Ultra Fast Diode Sourced from P ro ce ss 1 P. S e e B A V 9 9 for characteristics. Absolute Maximum Ratings* T A = 25°C unless otherwise noted Value


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    BAV70 BAV99 BAV74 100HA BAV70 ON diode bav70 PDF

    Untitled

    Abstract: No abstract text available
    Text: July 19 96 N ational Semiconductor" NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor G e n e ra l D e s c rip tio n F e a tu re s These P-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS


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    PDF

    m 861

    Abstract: NDB6051 NDP6051 GCMOz 225si T-50113
    Text: é> Na t io na I Semiconductor'' M ay 19 96 NDP6051/ NDB6051 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


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    May1996 NDP6051/NDB6051 m 861 NDB6051 NDP6051 GCMOz 225si T-50113 PDF

    ir 728p

    Abstract: 728p Mark T92 BSR18A
    Text: Discrete POWER & Signal Technologies S e m i c o n d u c t o r “ BSR18A & -, . , national BSR18A Mark: T92 PNP General Purpose Amplifier This device is designed as a general purpose am plifier and switching applications at collector currents of 10 nA to 100 mA.


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    BSR18A b501130 ir 728p 728p Mark T92 BSR18A PDF

    transistor 6D

    Abstract: D040 MMBTH81 MPSH81 transistor BUV 92
    Text: MPSH811MMBTH81 D is c r e te POV rE R & S i g n a l T ech r o lo g ie s National Semiconductor MPSH81 MMBTH81 S0T# B Mark: 3 D PNP RF Transistor This device is designed fo r general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA


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    MPSH81 MMBTH81 b5D1130 D040a0fl bSD1130 transistor 6D D040 MMBTH81 MPSH81 transistor BUV 92 PDF

    BF245C

    Abstract: BF245A BF256B BF244A BF244B BF244C BF245B BF256A BF256C BSR56
    Text: <J CT> Oì <J> h- O) O) 0> o> ^ ^ 55 8 8 8 8 8 8 in in in 8 8 8 U. z S • s « p ll ^ £ i i in m N ip in in SL H h >8 s o 8 >8 2 2 u. a o o o o CN CM CM CM « 5 S r> r* r* in in in in <£><£><£> <0 CO CO <0 CO 3 3 4.5 4.5 4.5 in in in in in in in m in in in m


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    BF244A BF244B BF244C BF245A BF245B BF245C BF256A BF256B BF256C BSR56 PDF

    50113G

    Abstract: BSR17A dc f 7403
    Text: BSR17A Discrete POWER & Signal Technologies National S e m i c o n d u c t o r " & BSR17A NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23.


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    BSR17A bSD113D 50113G BSR17A dc f 7403 PDF

    BF244A

    Abstract: "N-Channel JFET" bf244c BF244B jfet s00 BF244
    Text: " BF244A BF244B BF244C BF244A / BF244B / BF244C uctor D iscrete POWER &. Signal Technologies N-Channel JFET RF Amplifier This device is designed for RF amplifier and mixer and applications operating up to 450 MHz, and or analog switching requiring low capacitance. Sourced from Process 50.


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    BF244A BF244B BF244C L501130 "N-Channel JFET" bf244c jfet s00 BF244 PDF