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    onsemi MMBF5460

    JFET P-CH 40V SOT23-3
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    Flip Electronics MMBF5460 17,448
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    Flip Electronics MMBF5460

    JFET P-CH 40V SOT23-3
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    onsemi MMBF5460LT1

    JFET P-CH 40V 0.225W SOT23
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    Bristol Electronics MMBF5460LT1 550
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    onsemi MMBF5460LT1G

    JFET P-CH 40V SOT23-3
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    MMBF5460LT1G Digi-Reel 1
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    MMBF5460LT1G Reel
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    Fairchild Semiconductor Corporation MMBF5460

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    Bristol Electronics MMBF5460 949
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    MMBF5460 822
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    Quest Components MMBF5460 657
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    Win Source Electronics MMBF5460 37,925
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    MMBF5460 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MMBF5460 Fairchild Semiconductor TRANS JFET P-CH 5MA 3SOT-23 T/R Original PDF
    MMBF5460 Fairchild Semiconductor P-Channel General Purpose Amplifier Original PDF
    MMBF5460 Fairchild Semiconductor P-Channel General Purpose Amplifier (Not recommended for new designs) Original PDF
    MMBF5460 Motorola European Master Selection Guide 1986 Scan PDF
    MMBF5460 Motorola P-channel JFET general purpose transistor. Scan PDF
    MMBF5460 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    MMBF5460 National Semiconductor P-Channel General Purpose Amplifier Scan PDF
    MMBF5460 National Semiconductor JFET General Purpose Scan PDF
    MMBF5460L On Semiconductor Small Signal JFET Original PDF
    MMBF5460LT1 On Semiconductor JFET - General Purpose Transistor P-Channel Original PDF
    MMBF5460LT1 On Semiconductor JFET - General Purpose Transistor P-Channel Original PDF
    MMBF5460LT1 On Semiconductor JFET General Purpose Transistor Original PDF
    MMBF5460LT1 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    MMBF5460LT1 On Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, JFET, P Channel, 15V, 1mA, Pkg Style SOT23 Scan PDF
    MMBF5460LT1/D On Semiconductor JFET OENERAL PURPOSE TRANSLSTOR P-CHANNEL Original PDF
    MMBF5460LT1-D On Semiconductor JFET - General Purpose Transistor P-Channel Original PDF
    MMBF5460LT1G On Semiconductor Small Signal SOT23 JFET P Channel 40V Tape and Reel Original PDF

    MMBF5460 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor 2N5461

    Abstract: No abstract text available
    Text: MMBF5460 MMBF5461 2N5460 2N5461 2N5462 G D G S TO-92 SOT-23 S Mark: 6E / 61U D P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.


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    2N5460 2N5461 2N5462 MMBF5460 MMBF5461 2N5462 transistor 2N5461 PDF

    MMBF5460LT1

    Abstract: No abstract text available
    Text: ON Semiconductort JFET General Purpose Transistor MMBF5460LT1 P–Channel MAXIMUM RATINGS Rating Symbol Value Unit Drain–Gate Voltage VDG 40 Vdc Reverse Gate–Source Voltage VGSR 40 Vdc IGF 10 mAdc Forward Gate Current 3 1 THERMAL CHARACTERISTICS Characteristic


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    MMBF5460LT1 236AB) r14525 MMBF5460LT1/D MMBF5460LT1 PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBF5460LT1 JFET − General Purpose Transistor P−Channel http://onsemi.com Features • Pb−Free Package is Available 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Gate Voltage VDG 40 Vdc Reverse Gate−Source Voltage VGSR 40 Vdc IGF 10 mAdc


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    MMBF5460LT1 MMBF5460LT1/D PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBF5460LT1 Transistors P-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)40 I(D) Max. (A) I(G) Max. (A)10m Absolute Max. Power Diss. (W)225m’ Maximum Operating Temp (øC)150õ I(GSS) Max. (A)5.0n @V(GS) (V) (Test Condition)20 V(GS)off Min. (V).75


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    MMBF5460LT1 PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBF5460 Transistors P-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)40 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)5.0n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)


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    MMBF5460 PDF

    2n3819 field-effect transistors

    Abstract: MPF102 MMBF-5457 bf245b
    Text: Junctional Field−Effect Transistors JFETs Low−Frequency/Low−Noise Re Yfs @ 1 kHz Re Yos @ 1 kHz mmho Min µmho Max − − − 2N5460 2N5461 2N5462 − − − 3.0 1.0 1.5 1.0 1.5 2.0 3.0 3.0 4.5 MMBF5460LT1 BFR30LT1 BFR31LT1 N−Channel 2N3819 2N5457


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    2N3819 2N5457 2N5458 BF245A BF245B BF256A 2N5460 2N5461 2N5462 O-226AA, 2n3819 field-effect transistors MPF102 MMBF-5457 PDF

    MMBF5460

    Abstract: No abstract text available
    Text: 2N5460 / 5461 / 5462 / MMBF5460 / MMBF5461 MMBF5460 MMBF5461 2N5460 2N5461 2N5462 G S G S TO-92 SOT-23 D Mark: 6E / 61U D NOTE: Source & Drain are interchangeable P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general


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    2N5460 MMBF5460 MMBF5461 2N5461 2N5462 OT-23 PDF

    transistor 2N5461

    Abstract: 2n5462 2N5460 CONFIGURATION 2N5461 2N5461 CBVK741B019 F63TNR MMBF5460 MMBF5461 PN2222N
    Text: MMBF5460 MMBF5461 2N5460 2N5461 2N5462 G D G S TO-92 SOT-23 S Mark: 6E / 61U D P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.


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    MMBF5460 MMBF5461 2N5460 2N5461 2N5462 OT-23 transistor 2N5461 2n5462 2N5460 CONFIGURATION 2N5461 2N5461 CBVK741B019 F63TNR MMBF5460 MMBF5461 PN2222N PDF

    MMBF5460LT1

    Abstract: No abstract text available
    Text: ON Semiconductort JFET - General Purpose Transistor MMBF5460LT1 P–Channel 3 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Forward Gate Current Symbol Value Unit VDG 40 Vdc VGSR 40 Vdc IGF 10 mAdc Symbol Max Unit PD 225 mW 1.8


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    MMBF5460LT1 236AB) r14525 MMBF5460LT1/D MMBF5460LT1 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N5460 / 5461 / 5462 / MMBF5460 / MMBF5461 MMBF5460 MMBF5461 2N5460 2N5461 2N5462 G S G S TO-92 SOT-23 D Mark: 6E / 61U D NOTE: Source & Drain are interchangeable P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general


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    2N5460 MMBF5460 MMBF5461 2N5461 2N5462 OT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort JFET - General Purpose Transistor MMBF5460LT1 P−Channel 3 MAXIMUM RATINGS Rating Drain−Gate Voltage Reverse Gate−Source Voltage Forward Gate Current Symbol Value Unit VDG 40 Vdc VGSR 40 Vdc IGF 10 mAdc 1 2 CASE 318 −08, STYLE 10 SOT−23 TO −236AB


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    MMBF5460LT1 236AB) PDF

    transistor m6e

    Abstract: m6e marking code MARKING JW SOT-23 MMBF5460LT1G jw sot23 marking jw MMBF5460LT1 JW SOT-23 jw sot23-3
    Text: MMBF5460LT1 JFET − General Purpose Transistor P−Channel http://onsemi.com Features • Pb−Free Package is Available 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Gate Voltage VDG 40 Vdc Reverse Gate−Source Voltage VGSR 40 Vdc IGF 10 mAdc


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    MMBF5460LT1 OT-23 O-236) MMBF5460LT1/D transistor m6e m6e marking code MARKING JW SOT-23 MMBF5460LT1G jw sot23 marking jw MMBF5460LT1 JW SOT-23 jw sot23-3 PDF

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort JFET - General Purpose Transistor MMBF5460LT1 P–Channel 3 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Gate Voltage VDG 40 Vdc Reverse Gate–Source Voltage VGSR 40 Vdc IGF 10 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556 °C/W


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    MMBF5460LT1 236AB) PDF

    MMBF5460LT1

    Abstract: 90nF
    Text: MOTOROLA Order this document by MMBF5460LT1/D SEMICONDUCTOR TECHNICAL DATA JFET General Purpose Transistor P–Channel MMBF5460LT1 2 SOURCE 3 GATE 1 DRAIN 3 MAXIMUM RATINGS Rating Symbol Value Unit VDG 40 Vdc VGSR 40 Vdc IGF 10 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board 1


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    MMBF5460LT1/D MMBF5460LT1 236AB) MMBF5460LT1 90nF PDF

    transistor equivalent 2n5551

    Abstract: bf245 equivalent transistor equivalent book 2N5401 J-FET 2N3819 MMBF4856LT1 MIL-STD-750 method 1037 BC237 2N5551 equivalent MPS3640 equivalent MOTOROLA 2n2222 TRANSISTOR
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET General Purpose Transistor P–Channel MMBF5460LT1 2 SOURCE 3 GATE 1 DRAIN 3 MAXIMUM RATINGS Rating Symbol Value Unit VDG 40 Vdc VGSR 40 Vdc IGF 10 mAdc Symbol Max Unit Total Device Dissipation FR– 5 Board 1 TA = 25°C


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    MMBF5460LT1 236AB) CHARACTERIS218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 transistor equivalent 2n5551 bf245 equivalent transistor equivalent book 2N5401 J-FET 2N3819 MMBF4856LT1 MIL-STD-750 method 1037 BC237 2N5551 equivalent MPS3640 equivalent MOTOROLA 2n2222 TRANSISTOR PDF

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


    Original
    SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N PDF

    2n5462

    Abstract: 2N5460 2N5461 MMBF5460 MMBF5461
    Text: M ICÜNDUCTQR tm 2N5460 2N5461 2N5462 MMBF5460 MMBF5461 SOT-23 S Mark: 6 E / 6 1 U P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high im pedance signal sources. Sourced from Process 89.


    OCR Scan
    2N5460 MMBF5460 2N5461 MMBF5461 2N5462 OT-23 6E/61U Vdg--15V 2n5462 MMBF5460 MMBF5461 PDF

    2N5462

    Abstract: 2N5460
    Text: MICDNDUCTQ R tm MMBF5460 MMBF5461 2N5460 2N5461 2N5462 SOT-23 ' S Mark: 6 E /6 1 U P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.


    OCR Scan
    MMBF5460 MMBF5461 2N5460 2N5461 2N5462 OT-23 2N5460 2N5461 2N5462 MMBF5460 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JF E T General Purpose T ransistor MMBF5460LT1 P-Channel 2 SOURCE 1 DRAIN M AXIM U M R ATING S Rating Symbol Value Unit V DG 40 Vdc VG SR 40 Vdc IG F 10 mAdc Symbol Max Unit Total Device Dissipation F R - 5 B o a rd O


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    MMBF5460LT1 O-236AB) PDF

    2n5461

    Abstract: 2N5462 2N5461 equivalent 2N5460 Low noise audio amplifier MMBF5460 mmbf5461
    Text: S e m i c o n d u c t o r " MMBF5460 MMBF5461 2N5460 2N5461 2N5462 SOT-23 Mark: 6E /61U P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.


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    2N5460 2N5461 2N5462 MMBF5460 MMBF5461 2N5462 2N5461 equivalent Low noise audio amplifier mmbf5461 PDF

    SOT-23 marking 12F

    Abstract: 2000E7
    Text: MOTOROLA Order this document by MMBF5460LT1/D SEMICONDUCTOR TECHNICAL DATA JFET General Purpose Transistor P-Channel MMBF5460LT1 2 SOURCE MAXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Forward Gate Current Symbol Value Unit VDG 40 Vdc


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    MMBF5460LT1/D MMBF5460LT1 OT-23 O-236AB) SOT-23 marking 12F 2000E7 PDF

    2N5461

    Abstract: N5460 2n5462 2N5460 SOT-23 Mark ZF SOT-23 ZF MMBF5460 MMBF5461 T092
    Text: . , Discrete POWER & Signal Technologies Semiconductor'“ t ß 2N5460 2N5461 2N5462 MMBF5460 MMBF5461 P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced


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    MMBF5460 MMBF5461 OT-23 6E/61U OT-23 004CH71 2N5461 N5460 2n5462 2N5460 SOT-23 Mark ZF SOT-23 ZF MMBF5461 T092 PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBF5460LT1* M A X IM U M RATINGS Rating Symbol Value Unit Vdc Drain-Gate Voltage CASE 318-07, STYLE 10 SOT-23 TO-236AB V DG 40 V GSR 40 Vdc *GF 10 mAdc Symbol Max Unit Pd 225 mW 1.8 mW rc r »j a 556 °C/W TJ- Tsta - 5 5 to +150 °c Reverse Gate-Source Voltage


    OCR Scan
    MMBF5460LT1* OT-23 O-236AB) 2N5460 MMBF5460LT1 PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBF5460LT1* M A X I M U M R A T IN G S Rating S ym bol Value U n it Vdc Drain-G ate Voltage CASE 318-07, STYLE 10 SOT-23 TO-236AB vdg 40 V g SR 40 Vdc 'gf 10 m Adc S ym bol M ax U n it pd 225 mW 1.8 m W -cC R«j a 556 ’C/W T j ' Tstq - 5 5 to +150 =C


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    MMBF5460LT1* MMBF5460LT1 OT-23 O-236AB) 2N5460 PDF