Mmbt3906
Abstract: 2N3906
Text: 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier Description This device is designed for general purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E TO-92 SOT-23 B Mark:2A EBC C SOT-223
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2N3906
MMBT3906
PZT3906
2N3906
MMBT3906
OT-23
OT-223
2N3906BU
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MMBT3906
Abstract: No abstract text available
Text: 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier Features • This device is designed for general purpose amplifier and switching applications at collector currents of 10 A to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E TO-92 SOT-23 Absolute Maximum Ratings*
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2N3906
MMBT3906
PZT3906
2N3906
MMBT3906
OT-23
OT-223
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2n3906 2a
Abstract: TR 3906 PNP SM SOT-23 EBC 2n3906 sot23 2N3906 2N3906TAR 2N3906BU 2N3906 EBC 2N3906 SOT 23 2A 3906
Text: 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier Features • This device is designed for general purpose amplifier and switching applications at collector currents of 10 A to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E TO-92 SOT-23 Absolute Maximum Ratings*
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2N3906
MMBT3906
PZT3906
2N3906
MMBT3906
PZT3906
OT-23
2n3906 2a
TR 3906 PNP SM
SOT-23 EBC
2n3906 sot23
2N3906TAR
2N3906BU
2N3906 EBC
2N3906 SOT 23
2A 3906
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2n3906
Abstract: MMBT3906
Text: 2N3906 / MMBT3906 / PZT3906 PNP General Purpose Amplifier Description This device is designed for general purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E TO-92 SOT-23 SOT-223 B Mark:2A
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2N3906
MMBT3906
PZT3906
2N3906
MMBT3906
OT-23
OT-223
2N3906BU
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MMBT3906
Abstract: No abstract text available
Text: 2N3906 / MMBT3906 / PZT3906 PNP General-Purpose Amplifier Description This device is designed for general-purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E TO-92 SOT-23 SOT-223 B Mark:2A
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2N3906
MMBT3906
PZT3906
2N3906
MMBT3906
OT-23
OT-223
2N3906BU
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transistor crossreference
Abstract: NTE123AP NPN transistor ECB TO-92 TIS98 "cross-reference" 2N3906 NPN Transistor NTE159 ebc Transistor BF859A TO-202 transistor NPN SK3232
Text: Black White Vector Monitor Transistor Cross-Reference Location Deflection "X" Deflection "Y" "Other" Part Wells-Gardner 19V2000 Cross Type Upgrade Location Part Electrohome G05-802 Cross Type Upgrade Q701 Q702 Q703 Q704 Q705 Q706 Q707 na TPS98 TPS98 TPS98
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19V2000
G05-802
TPS98
2N3906
MPSU57
MPSU07
MPSA05
transistor crossreference
NTE123AP
NPN transistor ECB TO-92
TIS98 "cross-reference"
2N3906 NPN Transistor
NTE159
ebc Transistor
BF859A
TO-202 transistor NPN
SK3232
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IC2 7805
Abstract: 2N3904 pin diagram 1N4148 BC517 IC1 7805 IC1 LM317 2n3904 2n3906 pic programmer 2N3906 pin diagram 74LS244 diagram
Text: Universität Ulm, Abt. Allg. Elektrotechnik und Mikroelektronik, R. Lares, 07.10.99 PIC Programmer for LPT PC – Circuit Diagram V.2 D2 1N4004 SW1 Power Transf. 15V 4,5W CON2 +13.5V GL1 B80 C1500 3 1 2 IC1 LM317 50mA ff. 230V ~ adjust for C1 2200µF 35V E.
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1N4004
C1500
LM317
100nF
100nF
2N3904
2N3906
IC2 7805
2N3904 pin diagram
1N4148
BC517
IC1 7805
IC1 LM317
2n3904 2n3906
pic programmer
2N3906 pin diagram
74LS244 diagram
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transistor cross reference
Abstract: transistor c1008 npn transistor c1008 NPN C1008 s8550 npn SS8550 cross reference S9014 cross reference c1008 transistor s9014 equivalent S8050 equivalent
Text: Micro Commercial Components Small Signal Transistor Cross Reference Group by Package FORMALLY MICROSEMI CHATSWORTH SOT-23 PACKAGE MCC PART NUMBER HFE Pc mW Ic (mA) BVcbo (V) BVceo (V) Icb (µ A) vcb(V) Vce(sat) (V) fT (MHz) INDUSTRY STANDARD PART NUMBER
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OT-23
S9011
S9012
S9013
S9014
S9015
S9016
S9018
S8050
S8550
transistor cross reference
transistor c1008
npn transistor c1008
NPN C1008
s8550 npn
SS8550 cross reference
S9014 cross reference
c1008 transistor
s9014 equivalent
S8050 equivalent
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2N4058
Abstract: 2N2712 2N2714 2N2923 2N2924 2N2925 2N2926 2N3391A 2N3392 2N3393
Text: Small Signal Transistors TO-92 Case TYPE NO. DESCRIPTION LEAD VCBO VCEO VEBO CODE V ECB MIN 18 (V) *VCES MIN 18 (V) ICBO @ VCB (nA) (V) MAX 5.0 *ICES *ICEV MAX 500 18 hFE @ VCE @ IC (V) MIN 75 *hFE (1kHZ) MAX 250 (mA) VCE (SAT) @ IC Cob (V) (mA) fT NF toff
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2N2712
2N2714
2N2923
2N2924
2N4264
2N4287
2N4289
2N4400
2N4058
2N2712
2N2714
2N2923
2N2924
2N2925
2N2926
2N3391A
2N3392
2N3393
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Untitled
Abstract: No abstract text available
Text: 2N3905 2N3906 PNP SILICON PLANAR EPITAXIAL TRANSI STOBS THE 2N3905 AND 2N3906 ABE PNP SILICON PLANAR EPITAXIAL TRANSISTORS. THEY ARE INTENDED FOR GENERAL PURPOSE, SATUHATEDSWITCHING AND AMPLIFIER APPLICATIONS. THEY ARE COMPLIMENTARY TO 2N3903 AND 2N3904 RESPECTIVELY.
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2N3905
2N3906
2N3905
2N3906
2N3903
2N3904
T0-92A
100MHz
100kHz
100juA
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2N3906 MICRO ELECTRONICS
Abstract: 3906 pnp 2N3903 2N3904 2N3905 2N3906
Text: 2N3905 2N 3906 PNP SILICON PLANAR EPITAXIAL TRANSISTORS _ . THE 2N3905 AND 2N3906 ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS. THEY ARE INTENDED FOR GENERAL PURPOSE, SATUHATEDSWITCHING AND AMPLIFIER APPLICATIONS. THEY ARE COMPLEMENTAHT TO 2N3903 AND
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2N3905
2N3906
2N3903
2N3904
T0-92A
200mA
350mW
2N3906rent
2N3906 MICRO ELECTRONICS
3906 pnp
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2N304
Abstract: No abstract text available
Text: :» NPN SILICON PUNAR EPITAXIAL TRANSISTORS CASE T0-92A 2N3903, 2N3904 are NPN silicon planar epitaxial transistors designed for general purpose switching and amplifier applications. They are complementary to PNP types 2N3905 and 2N3906. I u EBC ABSOLUTE MAXIMUM RATINGS
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T0-92A
2N3903,
2N3904
2N3905
2N3906.
200mA
350mW
100kHz
100pA
2N304
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2N3904
Abstract: 2N39Q4 2N3906 2N39 2N3903 2N3905 tr 2n3904 2N3904 hfe
Text: NPN SILICON PUNAR EPITAXIAL TRANSISTORS :» I CASE T0-92A 2N3903, 2N3904 are NPN silicon planar epitaxial transistors designed for general purpose switching and amplifier applications. They are complementary to PNP types 2N3905 and 2N3906. EBC ABSOLUTE MAXIMUM RATINGS
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2n3903
2n39q4
2N3903,
2N3904
2N3905
2N3906.
T0-92A
200mA
350mW
2N39Q4
2N3906
2N39
tr 2n3904
2N3904 hfe
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1N3904
Abstract: 2N3903 2N3904 2N3906 2N3906/1N3904
Text: NPN SILICON PLANAR EPITAXIAL TRANSISTORS \ ^ ' r ï y ^ ï Ÿ . . . . . CASE T0-92A 2N3903, 2N3904 are NPN silicon planar epitaxial transistors designed for general purpose switching and amplifier applications. They are complementary to PNP types 2N3905 and 2N3906.
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2N3903,
2N3904
2N3906.
T0-92A
200mA
350mW
2N3903
100pA
1N3904
2N3906
2N3906/1N3904
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2N3906 EBC
Abstract: 2N4403 EBC 2N3906EBC
Text: Bipolar transistors-US/European series PNP transistors Table 5 General purpose small signal amplifiers Part no. 2N5087 Term arrmnt 1 23 EBC B VCbo B V c e o B V EbO •C B0 V CB h FE I c &V ce VCE &VBE @ lc C 0 b »T @ ' c sat (sat) max min min min min
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2N5087
2N4403
MPS6562
MPS-A56
2N3906 EBC
2N4403 EBC
2N3906EBC
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Untitled
Abstract: No abstract text available
Text: TO-92/TO-226AA “ 23 ‘2N ’ and ‘TP’ DEVICE TYPES ELECTRICAL CHARACTERISTICS at TA = 25°C ^CBO DC Current Gain V CE sat *T •c Device Type Max. V(BR)CBO V(BR)CEO V(BR)EBO Max. @ v CB hFE hre (mA) (V) (V) (V) (nA) (V) @ lc c»*1 V (V) (mA) (MHz) (mA)
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O-92/TO-226AA
TP2907A
2N3906
2N4403
2N5401
MPSA56
5D433fi
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Untitled
Abstract: No abstract text available
Text: PNP TRANSISTORS T| TO -92/TO -226A A l 23 ‘2N ’ and ‘TP’ DEVICE TYPES ELECTRICAL CHARACTERISTICS at T.A = 25°C DC Current Gain *CBO v CE sat 't 'c Max. V(sn)CBO V (BRJCEO V (BR)EBO Max. Device Type @ v C8 h FE h FE @ 'c @ v CE (mA) (V) (V) (V) TP2907A
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-92/TO
-226A
TP2907A
2N3906
2N4403
2N5401
MPSA56
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Untitled
Abstract: No abstract text available
Text: PNP TRANSISTORS TO-92/TO-226AA U23 ‘2N ’ an d ‘TP’ DEVIC E TYPES ELECTRICAL CHABACTERISTICS at A = 25°C DC Current Gain ^CBO v CE sat fT >c Max. V(BH)CBO V(SH)OEO Device (mA) Type (V) Max. @ v CB @ 'c (V) (V) (nA) (V) Min. Max. (mA) @ V CE Max. (V)
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O-92/TO-226AA
TP2907
TP2907A
2N3906
2N4402
2N4403
TP4413
TP4415
2N5086
2N5087
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2n5401 2n3906
Abstract: No abstract text available
Text: PNP TRANSISTORS TO-92/TO-226AA ‘2N ’ a n d ‘T P’ D EV IC E TYPES ELECTRICAL CHARACTERISTICS a l TA, = 2 5 C ^CBO D C C u r r e n t G a in v CE sat 't 'c V (BR)CBO v (BR)CEO v (BH)EBO M a x . @ v CB D e v ic e M ax. Type (m A ) (V) TP2907 500 TP2907A
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O-92/TO-226AA
TP2907
TP2907A
2N3906
2N4402
2N4403
TP4413
TP4415
2N5086
2N5087
2n5401 2n3906
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60V PNP TO-92
Abstract: 500ma 40v pnp
Text: Transistors • TO-92 Package/PNP Type For General Purpose Small Sig nal Am plifiers Part No. Package BVceo Min. 2N3703 TO-92 EC8 50V BVceo BV ebo Min. Min. 30V 5V '“ ° @VC0 . h? . @IC & VCE Min. Max. Max. 100nA 20V 30 150 50mA 5V VcE(sat) Max. VBE(sat)
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2N3703
100nA
100MHz
200mA
2N5087
40MHz
MPSA70
RJE9015C
60V PNP TO-92
500ma 40v pnp
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Untitled
Abstract: No abstract text available
Text: Small Signal Transistors TO-92 Case TO-92 TYPE MO. FAMILY UEAD CODE II•FE VC 8 0 v CEO VS0O *CBO * V (V) (V) W MM •V ce s MM MM *>CES *C6V MAX evcE M VCE(5A D *c c Ob <mA} 00 (mA) ’hfgftlcHZ) NM MAX ♦r NF *off m {MHz) (dB) *^rb MAX TYP MM MAX MAX
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2N2712
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z10m
Abstract: psa56
Text: Transistors TO-92 JEDEC Standards Numbers #N PN Transistors General purpose small signal amplifiers P a ckage BV qbo Min. BV ceo Min. 2N2925 TO -92 (ECB) 25V 25V 2N3711 MPS3711 TO -92 (ECB) (EBC) 30V 2N3860 TO -92 (ECB) 2N5088 BV ebo Min. hFE Min . Max.
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100nA
160MHz
2N2925
2N3711
MPS3711
2N3860
100nA
V100m
PS-A63
z10m
psa56
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2N5551YCECB
Abstract: No abstract text available
Text: I Small Signal Transistors TO-92 Case TO-92 T Y P E NO. F A M IL Y LEAD v E B O *C B O Ï V C BC nA (V) (V) (V) * 'C E S •V CES * *'C E V MIN MIN MAX (V) M IN 2N2712 NPN AMPL/SWITCH ECB 18 18 5.0 500 18 v CE hFE VC BO v CEO CODE (V) ® I C V C E (S A T ) @ , C
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n3904
Abstract: 2N3706 2N4289 "low noise" npn QDD2421 2n4287
Text: Small Signal Transistors TO-92 Case TO-92 TYPE NO. FAMILY LEAD CODE VCBO v CEO v EBO •CBO ä V c B C nA (V) (V) (V) (V) '■c e s *VCES *'CEV MIN MIN MIN MAX vCE © l c v C E (S i L T ) 'C c ob h FE (V) (mA) (V) (mA) ‘hfe(1 kHZ) MIN MAX NF ‘off
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2n2712
2n2714
2n2923
2n2924
2n2925
2n2926
2n4125
2n4126
2n4264
2n4287
n3904
2N3706
2N4289
"low noise" npn
QDD2421
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