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    2N3997 Price and Stock

    Microchip Technology Inc 2N3997

    POWER BJT
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    Microchip Technology Inc JAN2N3997

    TRANS NPN 80V 10A TO111
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    Microchip Technology Inc JANTX2N3997

    TRANS NPN 80V 10A TO111
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    Microchip Technology Inc JANTX2N3997
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    Microchip Technology Inc JANTXV2N3997

    TRANS NPN 80V 10A TO111
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    Microchip Technology Inc 2N3997JANTXV

    Transistor GP BJT NPN 80V 5A 4-Pin TO-111 - Bulk (Alt: JANTXV2N3997)
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    2N3997 Datasheets (51)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N3997 Microsemi NPN POWER SWITCHING SILICON TRANSISTOR Original PDF
    2N3997 API Electronics Short form transistor data Short Form PDF
    2N3997 Diode Transistor NPN TO-111 / TO-59 Transistors Scan PDF
    2N3997 Diode Transistor Transistor Short Form Data Scan PDF
    2N3997 General Diode Transistor Selection Guide Scan PDF
    2N3997 General Transistor NPN Power Transistors Scan PDF
    2N3997 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N3997 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N3997 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N3997 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N3997 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N3997 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N3997 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N3997 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N3997 Unknown Shortform Electronic Component Datasheets Short Form PDF
    2N3997 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N3997 Unknown Vintage Transistor Datasheets Scan PDF
    2N3997 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N3997 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N3997 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    2N3997 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3996

    Abstract: 2N3997 2N3999 1000C 2N3998
    Text: TECHNICAL DATA 2N3996 JAN, JTX, JTXV 2N3997 JAN, JTX, JTXV 2N3998 JAN, JTX, JTXV 2N3999 JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/374 NPN POWER SWITCHING SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage


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    PDF 2N3996 2N3997 2N3998 2N3999 MIL-PRF-19500/374 1000C 2N3996, 2N3998 2N3997, 2N3999 1000C

    2N3997

    Abstract: 2N3997J 2N3997JV 2N3997JX
    Text: 2N3997 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • High-speed power switching • Power transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3997J


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    PDF 2N3997 MIL-PRF-19500 2N3997J) 2N3997JX) 2N3997JV) MIL-STD-750 MIL-PRF-19500/374 2N3997 2N3997J 2N3997JV 2N3997JX

    2N3997

    Abstract: 2N3996 2n3996 equivalent transistor 1000C 2N3998 2N3999 2N3997 JAN to-111
    Text: TECHNICAL DATA NPN POWER SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/374 Devices 2N3996 Qualified Level 2N3997 2N3998 MAXIMUM RATINGS Ratings Symbol Value Unit VCEO VCBO VEBO IB 80 100 8.0 0.5 5.0 10 1 2.0 30 -65 to +200 Vdc Vdc Vdc Adc Max.


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    PDF MIL-PRF-19500/374 2N3996 2N3997 2N3998 2N3999 1000C 2N3996, 2N3997, 2N3997 2N3996 2n3996 equivalent transistor 1000C 2N3998 2N3999 2N3997 JAN to-111

    Untitled

    Abstract: No abstract text available
    Text: 2N3997 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • High-speed power switching • Power transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3997J


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    PDF 2N3997 MIL-PRF-19500 2N3997J) 2N3997JX) 2N3997JV) MIL-STD-750 MIL-PRF-19500/374

    Untitled

    Abstract: No abstract text available
    Text: 2N3997+JANTX Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)5.0ux @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2N3997 Freq40M

    SDT85502

    Abstract: SDT849 a/TO111 2N5002 SDT3403 SDT6314 BU208 2N2657 2N2877 2N2879
    Text: Device Type VCEO 2N2657 2N2658 2N2877 2N2878 2N2879 2N2880 2N2890 2N2891 2N3744 2N3745 2N3746 2N3747 2N3748 2N3749 2N3750 2N3751 2N3752 2N3996 2N3997 2N3998 2N3999 2N4111 2N4112 2N4113 2N4150 2N4305 2N4307 2N4309 2N4311 2N4395 2N4396 2N4895 2N4896 2N4897 2N4913


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    PDF 2N2657 2N2658 2N2877 2N2878 2N2879 2N2880 2N2890 2N2891 2N3744 2N3745 SDT85502 SDT849 a/TO111 2N5002 SDT3403 SDT6314 BU208 2N2657 2N2877 2N2879

    2N3997SMD05

    Abstract: No abstract text available
    Text: 2N3997SMD05 Dimensions in mm inches . 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) 3.05 (0.120) 0.127 (0.005) 3 10.16 (0.400) 5.72 (.225) 0.76 (0.030) min. 1 Bipolar NPN Device in a Hermetically sealed Ceramic Surface Mount


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    PDF 2N3997SMD05 O276AA) 15-Aug-02 2N3997SMD05

    2N3997SMD

    Abstract: No abstract text available
    Text: 2N3997SMD Dimensions in mm inches . 0.89 (0.035) min. 3.60 (0.142) Max. 3 16.02 (0.631) 15.73 (0.619) 4.14 (0.163) 3.84 (0.151) 3.70 (0.146) 3.41 (0.134) 1 10.69 (0.421) 10.39 (0.409) 0.76 (0.030) min. 3.70 (0.146) 3.41 (0.134) Bipolar NPN Device in a Hermetically sealed


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    PDF 2N3997SMD O276AB) 15-Aug-02 2N3997SMD

    Untitled

    Abstract: No abstract text available
    Text: SPACE POWER ST ELECTRONICS ]>E|fl4M03SS 0DDD105 fl | 7 3 3-« / s Hi-Rel PLANAR POWER - 5 AMP NPN TO-3 60W@T =100°C 30W@T =100°C r C C Breakdown Voltages TYPE 2N3850 2N3851 2N3852 2N3853 2N3878 2N3879 2N3928 2N3929 2N3996 2N3997 2N3998 2N3999 2N4231 2N4232


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    PDF fl4M03SS 0DDD105 2N3850 2N3851 2N3852 2N3853 2N3878 2N3879 2N3928 2N3929

    Untitled

    Abstract: No abstract text available
    Text: 2N3997 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)5.0ux @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2N3997 Freq40M

    Untitled

    Abstract: No abstract text available
    Text: 2N3997+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)5.0ux @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2N3997 Freq40M req40M

    SPHV402

    Abstract: 2N3853
    Text: SPACE POWER ST ELECTRONICS ]>E|fl4M03SS 0DDD105 fl | 7 3 3-« / s Hi-Rel PLANAR POWER - 5 AMP NPN TO-3 60W@T =100°C 30W@T =100°C r C C Breakdown Voltages TYPE 2N3850 2N3851 2N3852 2N3853 2N3878 2N3879 2N3928 2N3929 2N3996 2N3997 2N3998 2N3999 2N4231 2N4232


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    PDF fl4M03SS 0DDD105 2N3850 2N3851 2N3852 2N3853 2N3878 2N3879 2N3928 2N3929 SPHV402

    TO111

    Abstract: 2N3850 2N3928 2N43 2N4231 TO-111
    Text: high-rei power transistors 84 SILICON NPN TRANSISTORS 5 Amp BREAKDOWN VOLTAGE TYPE NUMBER CASE SIZE VeB VCE VEB 2N3850 2N3851 2N3852 2N3853 2N3878 2N3879 2N3928 2N3929 2N3996 2N3997 2N3998 2N3999 2N4231 2N4232 2N4233 2N4300 2N4913 2N4914 2N4915 2N4998 2N5000


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    PDF 2N3850 2N3851 2N3852 2N3853 2N3878 2N3879 2N3928 2N3929 2N3996 2N3997 TO111 2N43 2N4231 TO-111

    Untitled

    Abstract: No abstract text available
    Text: SPACE POWER ST ELECTRONICS ]>E|fl4M03SS 0DDD105 fl | 7 3 3-« / s Hi-Rel PLANAR POWER - 5 AMP NPN TO-3 60W@T =100°C 30W@T =100°C r C C Breakdown Voltages TYPE 2N3850 2N3851 2N3852 2N3853 2N3878 2N3879 2N3928 2N3929 2N3996 2N3997 2N3998 2N3999 2N4231 2N4232


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    PDF fl4M03SS 0DDD105 2N3850 2N3851 2N3852 2N3853 2N3878 2N3879 2N3928 2N3929

    2N3907

    Abstract: No abstract text available
    Text: 4ÖE D • A1331Ö7 GÜD0437 SEMELABr TbS H S n L B SEflELAB LTD 7^ 27. BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Number Rel Code 2N3879 2N3907 2N3919 2N3962 2N3963 2N3964 2N3965 2N3996 2N3997 2N3998 2N3999 2N4000 2N4001 2N4026 2N4027 2N4028


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    PDF A1331Ã D0437 2N3879 2N3907 2N3919 2N3962 2N3963 2N3964 2N3965 2N3996 2N3907

    2N3997

    Abstract: No abstract text available
    Text: 12E I SOLI» STATE DEVICES INC | s 3 t t D l l OOOSOtl 7 | T - S 2 - C ? 2N3996 AND 2N3997 5 AMP HIGH SPEED NPN TRANSISTOR 100 VOLTS 14830 Valley View Avenue La Mirada. California 90638 213 921-9660 TW X 910-583-4807 F A X 213-92Í-2396 CASE STYLE Z FEATURES


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    PDF 2N3996 2N3997 2N4999 2N5001

    2N3996

    Abstract: 2n3997 L6228
    Text: POWER TRANSISTORS JAN, JAN, JAN, JAN, 5 Amp, 80V,Planar NPN JANTX, JANTX, JANTX, JANTX, & JANTXV & JANTXV & JANTXV & JANTXV 2N3996 2N3997 2N3998 2N3999 FEATU RES D ESCRIPTIO N • • • • • Unitrode power transistors provide a unique combination of low saturation


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    PDF 2N3996 2N3997 2N3998 2N3999 MIL-S-19500/374* 100mA L6228

    2N3996

    Abstract: 2N3999 N3998 2N3997 2N3998 UNITRODE TRANSISTORS JANTXV2N3999 2N3997 JAN to-111
    Text: POWER TRANSISTORS JAN, JAN, JAN, JAN, 5 Amp, 80V, Planar NPN JANTX, JANTX, JANTX, JANTX, & JANTXV & JANTXV & JANTXV & JANTXV 2N3996 2N3997 2N3998 2N3999 FEATURES D ESCRIPTION • • • • • U nitrode power tra n sistors provide a u niq u e co m b in ation of low saturation


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    PDF 2N3996 2N3997 2N3998 2N3999 MIL-S-19500/374* 2N3996, 2N3997, 2N3998, 100mA 2N3999 N3998 UNITRODE TRANSISTORS JANTXV2N3999 2N3997 JAN to-111

    2N3997 JAN to-111

    Abstract: 2N4116 2N3751 2N3752 2N3850 2N3851 2N3852 2N3853 2N3928 2N3929
    Text: MJæ J E LE C T R O N IC S , INC. [ - t i COLLECTOR CURRENT = 5 AMPS NPN TYPES— Continued Device No 2N3751 2N3752 2N3850 2N3851 2N3852 2N3853 2N3928 2N3929 2N3996 JAN 2N3996 JTX 2N3996 JTXV 2N3996 2N3997 JAN 2N3997 JTX 2N3997 JTXV 2N3997 2N3998 JAN 2N3998


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    PDF 2N3751 O-111/1 2N3752 2N3850 O-111 2N3851 2N3852 2N3853 2N3997 JAN to-111 2N4116 2N3928 2N3929

    TIP-561

    Abstract: TIP512 tip561 tip558 n538 TIP55 TIP622 TIP5 TIP511 TIP-555
    Text: i Metal Can Power Case Outlines High Reliability P ro fe ssio n i Types continued Device Type ' Polarity Outline Continuous Ic A TIP554 TIP555 TIP556 2N5938 TIP509 TIP511 TIP610 T1P512 2N4913 2N4914 TIP620 TIP625 2N2880 2N5385 2N3996 2N3997 2N3998 2N3999


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    PDF TC-25-C TC-100 TIP554 TIP555 TIP656 2N5938 TIP609 TIP511 TIP512 2N4913 TIP-561 tip561 tip558 n538 TIP55 TIP622 TIP5 TIP-555

    2N4033

    Abstract: 2n4026
    Text: fll331fl7 QDDQDlfl T • S N L B 37E D SEMELAB LTD ' IVpe No. Reliability Polarity Option 2N3997 2N3998 2N3999 2N4000 2N4001 HI-REL HI-REL HI-REL HI-REL HI-REL NPN NPN NPN NPN NPN * * * * T0111 T059 T059 T039 T039 80 80 80 80 100 2N4012 2N4026 2N4027 2N4028


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    PDF fll331fl7 2N3997 2N3998 2N3999 2N4000 2N4001 2N4012 2N4026 2N4027 2N4028 2N4033

    2N5415

    Abstract: No abstract text available
    Text: p^ [D [yj©Tf -Ætttron ©ä t ä [l Devices. Inc. J A N , J A N T X , J A N T X V P O W E R T R A N S IS T O R S (P L A N A R ] DEVICE TYPE MIL-S19500/ VCEO VOLTS IC (CONT.) AMPS POWER (@TC = 25“C) WATTS CASE TYPE CHIP TYPE 2N2880 2N3418 2N3419 2N3420


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    PDF O-111 O-5/39 O-114 2N5415

    2N5006

    Abstract: 2N5008 2N5288 2N5317 2N5319 2N5731 2N5957 WALTA
    Text: General Transistor Corporation CASE le max = 10-20A V c e o ( s u s ) = 80-100V NPN Power Transistors ISOLATED COLLECTOR VCEO (aua) M 1C (mm) (A) 2N5006 2N5008 2N5288 2N5289 BO BO 100 100 10 10 10 10 30-90 @5/5 70-200 @ 5/5 30-90 @5/5 70-200 @ 5/5 1.5 @ 10/1


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    PDF 0-20A 0-100V 2N5006 2N5008 2N5288 2N52B9 2N5285 2N534E 2N5347 2N5348 2N5317 2N5319 2N5731 2N5957 WALTA

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF