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    Sumitomo Wiring Systems LTD SDT8490-RC-QN

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    SDT849 Datasheets (1)

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    ECAD Model
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    PDF
    SDT84924 Solitron Devices Planar Power Transistor Scan PDF

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    Untitled

    Abstract: No abstract text available
    Text: SDT84924 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V) I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)


    Original     		SDT84924 Freq30M PDF

    2NS604

    Abstract: 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302
    Text: -Jfolìtron P L A N A R P O W E R T R A N S IS T O R S Devices. Inc H DEVICE TYPE VCEO V hFE MIN/MAX 2N2387 2N2988 2N2S89 2N2990 2N2991 80 100 80 100 80 2N2992 2N2993 2N2994 2N3439 2N3440 ÎA M W P K M ic (A) PT MAX (W) CASE TYPE CHIP TYPE ic (A) 25/75 25/75


    OCR Scan     		2N2387 2N2988 2N2S89 2N2990 2N2991 2N2992 2N2993 2N2994 2N3439 2N3440 2NS604 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302 PDF

    2N5286

    Abstract: 2N5290 SOLITRON 2N5740 SDT13305 SDT3775 SDT85502 2N439S 2N5610 2N6562
    Text: SOLITRON DEVICES INC ^ D eT| fl3t.flt.DE 0D0S7b5 7 l ~ T ' 3 3 - 0 / F ^ E x y K g T T a t m , © _ PLAN AR POWER TRAN SISTO RS § M&. DEVICE TYPE hpE MIN/MAX @ ic A VCE (sat) MAX (V) @ ic (A) *T MIN (MHz) PT


    OCR Scan     		2N2657 2N2658 2N2877 O-111 2N2878 2N2879 2N2880 2N5286 2N5290 SOLITRON 2N5740 SDT13305 SDT3775 SDT85502 2N439S 2N5610 2N6562 PDF

    SDT85502

    Abstract: SDT849 a/TO111 2N5002 SDT3403 SDT6314 BU208 2N2657 2N2877 2N2879
    Text: Device Type VCEO 2N2657 2N2658 2N2877 2N2878 2N2879 2N2880 2N2890 2N2891 2N3744 2N3745 2N3746 2N3747 2N3748 2N3749 2N3750 2N3751 2N3752 2N3996 2N3997 2N3998 2N3999 2N4111 2N4112 2N4113 2N4150 2N4305 2N4307 2N4309 2N4311 2N4395 2N4396 2N4895 2N4896 2N4897 2N4913


    Original     		2N2657 2N2658 2N2877 2N2878 2N2879 2N2880 2N2890 2N2891 2N3744 2N3745 SDT85502 SDT849 a/TO111 2N5002 SDT3403 SDT6314 BU208 2N2657 2N2877 2N2879 PDF

    2SB5950

    Abstract: 2SD5250 2SB616 NEC 2SD586 to-53 2SC940 NEC 2sb616 2SB595Y 2SB616 2SD586 2SD52
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V BR CEO (A) (V) PD Max hFE *T ON) Min (Hz) 'CBO t0N r (CE)sat Toper Max Max (A) (s) Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . -10 . . .15


    Original     		SDT6316 SDT6416 SML1643 SML1653 2SB747 2N1211 2N1617 2SB5950 2SD5250 2SB616 NEC 2SD586 to-53 2SC940 NEC 2sb616 2SB595Y 2SB616 2SD586 2SD52 PDF

    SDT84

    Abstract: No abstract text available
    Text: 8 3 6 8 6 0 2 S O L IT R O N D E V I C E S INC 95 D S0LITR0N DEVICES INC TS 02766 D T' J ?3- DE ö 3 h ö b ü 2 □ 00S7t.b 4 Devices. Inc. PLANAR POWER TRANSISTORS M [continued] (A fT MIN (MHz) PT MAX (W) CASE TYPE CHIP TYPE 0.30 0.30 0.30 0.30 0.25 2.0


    OCR Scan     		00S7t SDT40302 SDT40303 SDT40304 SDT40305 SDT41301 SDT41302 SDT41303 SDT41304 SDT41305 SDT84 PDF