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    2SD52 Price and Stock

    JRH Electronics DW-14-12-S-D-525

    STACKING BOARD CONNECTOR, DW SER
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    DigiKey DW-14-12-S-D-525 Bulk 1
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    Samtec Inc DW-14-12-S-D-525

    CONN HDR 28POS 0.1 STACK T/H
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    Mouser Electronics DW-14-12-S-D-525
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    Newark DW-14-12-S-D-525 Bulk 1
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    Master Electronics DW-14-12-S-D-525
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    JRH Electronics ZSS-107-02-S-D-523

    .100" SHROUDED ELEVATED TERMINAL
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    Samtec Inc ZSS-107-02-S-D-523

    .100" SHROUDED ELEVATED TERMINAL
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    Mouser Electronics ZSS-107-02-S-D-523
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    Sager ZSS-107-02-S-D-523 139 1
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    Samtec Inc ZSS-105-02-S-D-523

    .100" SHROUDED ELEVATED TERMINAL
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    Mouser Electronics ZSS-105-02-S-D-523 12
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    2SD52 Datasheets (139)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD52 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD52 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SD52 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SD52 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD52 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD52 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SD52 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD52 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD52 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD52 Unknown Cross Reference Datasheet Scan PDF
    2SD52 Unknown Transistor Replacements Scan PDF
    2SD520 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD520 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD520 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD520 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD521 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD521 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD521 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD521 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SD521 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    ...

    2SD52 Datasheets Context Search

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    2SB596

    Abstract: 2SD526 2SD52
    Text: JMnic Product Specification 2SB596 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD526 ・Good linearity of hFE APPLICATIONS ・Power amplifier applications ・Recommend for 20~25W high fidelity audio frequency amplifier output stage


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    PDF 2SB596 O-220C 2SD526 2SB596 2SD526 2SD52

    2SB596

    Abstract: pnp hfe 120-240 2SD526
    Text: SavantIC Semiconductor Product Specification 2SB596 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SD526 ·Good linearity of hFE APPLICATIONS ·Power amplifier applications ·Recommend for 20 25W high fidelity audio frequency amplifier output stage


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    PDF 2SB596 O-220C 2SD526 2SB596 pnp hfe 120-240 2SD526

    2sb596

    Abstract: 2SD526 ic audio amplifier 2*5w
    Text: Inchange Semiconductor Product Specification 2SB596 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD526 ・Good linearity of hFE APPLICATIONS ・Power amplifier applications ・Recommend for 20~25W high fidelity


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    PDF 2SB596 O-220C 2SD526 2sb596 2SD526 ic audio amplifier 2*5w

    ce50a

    Abstract: No abstract text available
    Text: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SD525 Features • • • • • Silicon NPN triple diffused type High breakdown voltage Low Collector saturation voltage Complementary to 2SB595


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    PDF 2SD525 2SB595 O-220 ce50a

    2SD525

    Abstract: 2SB595
    Text: SavantIC Semiconductor Product Specification 2SD525 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SB595 ·High breakdown voltage :VCEO=100V ·Low collector saturation volage : VCE sat =2.0V(Max) APPLICATIONS ·Power amplifier applications


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    PDF 2SD525 O-220C 2SB595 2SD525 2SB595

    NPN 80V 3A

    Abstract: 2SA671 2SD526 transistor 2SD526
    Text: 2SD526 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SA671 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)


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    PDF 2SD526 O-220 2SA671 NPN 80V 3A 2SA671 2SD526 transistor 2SD526

    2SD526

    Abstract: 2SB596
    Text: Inchange Semiconductor Product Specification 2SD526 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SB596 ・Good linearity of hFE APPLICATIONS ・Power amplifier applications ・Recommend for 20~25W high fidelity


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    PDF 2SD526 O-220C 2SB596 2SD526 2SB596

    2SD525

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD525 Unit in nsn POWER AMPLIFIER APPLICATIONS. 0 3 .6 * 0.2 wÛ FEATURES: • High Breakdown Voltage : V q £q =100V • Low Collector Saturation Voltage : VcE sat = 2 .0V(Max.) • Complementary to 2SB595. • Recommended for 30W High Fidelity Audio


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    PDF 2SD525 2SB595. 2SD525

    2sc1815

    Abstract: 2SC4698 2SC930 2SC1684 S 2SC1684 2SC828 2SC2988 2SC387A 2SC829 2SD917
    Text: - m tì: % Type No. Manuf. JÊ « SANYO 2 TOSHIBA 'S NEC B ÎL HITACHI ¡ÜÍ ± iS FUJITSU fò T MATSUSHITA * 2SC lb V - - 2SC 17 3K zsuöza * $ 2SC829 * 2SC 17A M. $ 2SC 18 S 2 2SC829 * * 2SC 21 S 2SC521A * 2SC 22 S m 2SD526 * 2SC 23 - d M 2SD526 a±a * 2SC 26


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    PDF 2SC829 2SC828 2SC521A 2SD1485 2SD526 2SC1684 2sc1815 2SC4698 2SC930 2SC1684 S 2SC1684 2SC828 2SC2988 2SC387A 2SC829 2SD917

    Untitled

    Abstract: No abstract text available
    Text: V IJ a > P N P = m m 2SB596 •¥-fö : mm 0 3 .6 + 0 .2 3 Wÿ v>0 coÊ MU &Ä • hpE • 2SD526 t : P c = 30W T c = 25°C V' o 7' ') * 'y 9 ') (; &■ <0 i t o 3 > 20~ 25 W ^ ' f 7 7 /í í - f ' í t T > (Ta = 25°C) m g a2 ■§• ÎË i& M f£ VCBO


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    PDF

    2sb595

    Abstract: 2sb595o 2SB595-O transistor 2sd525
    Text: 2SB595 TO SH IBA TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2SB595 POWER AMPLIFIER APPLICATIONS. U nit in mm • High Breakdown Voltage : V^EO = —100V • Low Colleetor-Emitter Saturation Voltage : VCE(sat)“ —2.0V (Max.) • Complementary to 2SD525.


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    PDF 2SB595 --100V 2SD525. 2sb595 2sb595o 2SB595-O transistor 2sd525

    transistor 2sd525

    Abstract: 2SD525
    Text: TO SH IBA 2SD525 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SD525 Unit in mm 10.3MAX. ¿ 3.6 ±0.2 High Breakdown Voltage : VCEO = 1 OV Low Collector Saturation Voltage : Vce ( s a t ) “ 2.0V (Max.) Complementary to 2SB595.


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    PDF 2SD525 2SB595. transistor 2sd525 2SD525

    2SB596

    Abstract: 2SD526 AC75 20-25W
    Text: TOSHIBA 2SD526 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD526 Unit in mm PO W ER AM PLIFIER APPLICATIONS 43.6 + 0.2 • • • • High Power Dissipation : P0 = 3OW Te = 25°C Good Linearity of hjrg. Complementary to 2SB596. Recommend for 20~25W High Fidelity Audio Frequency


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    PDF 2SD526 2SB596. 961001EAA2' 2SB596 2SD526 AC75 20-25W

    transistor D526

    Abstract: D526 d526 y D526 transistor d526 - y 2SD526 toshiba D526 30W AUDIO AMPLIFIER
    Text: TOSHIBA 2SD526 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • • • SILICON NPN TRIPLE DIFFUSED TYPE 2S D526 High Power Dissipation : Pq = 30W T c = 25°C Good Linearity of hpE. Complementary to 2SB596. Recommend for 2Q~25W High Fidelity Audio Frequency


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    PDF 2SD526 2SB596. O-220AB 50x50x2mm 50X50Xlmm 961001EAA2' transistor D526 D526 d526 y D526 transistor d526 - y 2SD526 toshiba D526 30W AUDIO AMPLIFIER

    2SB595

    Abstract: No abstract text available
    Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SB595 Unit in mm 10.3 MAX. 03.6ÍO.2 POWER AMPLIFIER APPLICATIONS. FEATURES: • High Breakdown Voltage : V^gQ-100V • Low Collector-Emitter Saturation Voltage : VcE sat =~2.0V(Max.) • Complementary to 2SD525. 1.5 MAX


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    PDF 2SB595 gQ--100V 2SD525. 2SB595

    2SD526

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD526 Unit in POWER AMPLIFIER APPLICATIONS. 03. 6± O .2 FEATURES : • High Power Dissipation : P C=30W Tc=25°C • Good Lineality of h p E . • Complementary to 2SB596. • Recommended for 20 'v 25W High Fidelity Audio


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    PDF 2SD526 2SB596. 2SD526

    2SD454

    Abstract: 2SC901 2SC1667 2SD400 E 2SC2516 NEC 2sc2120 2SD473 2SD647 2s0867 2SD526
    Text: - £ m « it Manuf. Type No. 2SD 439 ^ 2SD 457 * 2SD 459 * 2SD 460 * * 2SD 461 * 2SD 463 — * 2SD 454 ^ 3K SANYO = $ B n 2SC2236 2SC1449 2SD635 2SD970 K 2SD633 2SD970OO %t9 7 C 2SD473(H) 2SD524 2SD473(H) 2SC2120 2SC2001 ED 2SD471 2SD 469 -— m « T a *


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    PDF 2SD439 2SD457 2SD642 2SD1196 2SD635 2SD633 2SD657 2SD523 2SC1449 2SC2236 2SD454 2SC901 2SC1667 2SD400 E 2SC2516 NEC 2sc2120 2SD473 2SD647 2s0867 2SD526

    2SB596 LB

    Abstract: 2SB596 2SD526
    Text: ÆàMOSPEC PNP SILICON POWER TRANSISTORS .designed for use in general power amplifier application FEATURES: * Low Collector-Emitter Saturation Voltage v CE satf 10V(Max @ I c=3.0A,Ib=0.3A * DC Current Gain hFE= 40-240@lc= 0.5A * Complementary to NPN 2SD526


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    PDF 2SD526 2SB596 2SB596 LB 2SD526

    2SD 388 A

    Abstract: 2Sd427 2SD313 2SC2320 2SD650 2SC2073 2SD867 2SC2204 2sd1138 2SD2061
    Text: - m £ Type No. tt s Manuf. M 2SÜ1135 2SD1266A 2SC4007 2SD1135 2SD1266 2SÜ2023 2SD1135 2SDÎ266A 2SC4007 2SD526 2SD313 2SD880 2S0 366A fé T 2SD313 2SD526 2SD 367 fé T / H n ✓ M M z. 2SD 371 2SD1884 2SD820 2SD380 2SD867 2SD319 2SD427 2SD716 2SD 373 -


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    PDF 2SD365A 2SD366 2SD366A 2SD367 2SD368 2SD369 2SD370 2SD371 2SD372 2SD373 2SD 388 A 2Sd427 2SD313 2SC2320 2SD650 2SC2073 2SD867 2SC2204 2sd1138 2SD2061

    2SD2061

    Abstract: 2SD880 2SC782 2SD867 2SD877 2SD797 2S0880 2SC782 TOSHIBA 2Sd 123 tl 2SC783
    Text: - m % € tt Manuf. h a m SANYO TOSHIBA m NEC a ti HITACHI * ± FUJITSU a fâ T MA T S U S H I T A £ MITSUBISHI E. □ — A ROHM ¿ou i¿u vn; S ÎL ¿dUd¿0 2SCÍ338 2SD2081 * 2SD 121 H 2SD525 2SC1398 2SD2061 * 2SD 122 0 ÍL a £ 2SD526 2SD1266A 2SD2061


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    PDF 2SD121 2SD122 2SD123 2SD124 2SC1398 2SD1266A 2SD1264 2SD525 2SD526 2SD2081 2SD2061 2SD880 2SC782 2SD867 2SD877 2SD797 2S0880 2SC782 TOSHIBA 2Sd 123 tl 2SC783

    2SD526

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD526 Unit in mm POWER AMPLIFIER APPLICATIONS. J2Í3.6±0.2 FEATURES : • High Power Dissipation : PC=30W Tc=25°C • Good Linearity of hpg. • Complementary to 2SB596. • Recommended for 20 ^ 25W High Fidelity Audio


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    PDF 2SD526 2SB596. 2SD526

    Untitled

    Abstract: No abstract text available
    Text: 2SB596 SILICON PNP TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. FEATURES: • Good Linearity of hpj;. ■ Complementary to 2SD526. • Recommended for 20 ^ 25W High-Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC


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    PDF 2SB596 2SD526.

    2SD636 R

    Abstract: 2SD636 2SB615 2SD650H 2SB613 2SD511 2SD646 2SD637 2SB631 2SD601
    Text: - 220 - Ta=25tC, *EP(àîc=25tC M & 2SD526 t± & ÄS 2SD545 m V'cEO Ic(D C ) Pc Pc* (V) (V) (A) (W) (W) 80 80 4 LF PA 25 25 1 220 180 15 70 50 7 Ä 2 PA/PSW/DDC/Reg 2SD553 Ä S PSW/PA m VCBO PA 2SD552 2SD560 m ICEO (max) (/¿A) 30 0. 6 n k 4$ 14 hF E Vc b


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    PDF 2SD526 2SD545 2SD552 2SD553 2SD560 2SD568 2SD569 2SD571 2SB639H 2SD629H 2SD636 R 2SD636 2SB615 2SD650H 2SB613 2SD511 2SD646 2SD637 2SB631 2SD601

    2SB596

    Abstract: No abstract text available
    Text: SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2SB596 U nit in mm PO W ER A M PLIFIER APPLIC ATIO N S. • • • 0 3 .6 1 0 .2 Good Linearity of hpg. Complementary to 2SD526. Recommended for 20~25W High-Fidelity Audio Frequency Amplifier Output Stage. M A X IM U M RATIN GS (Ta = 25°C)


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    PDF 2SB596 2SD526. 100x100x2m 100X100X 2SB596