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    2SC2120 Search Results

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    2SC2120 Price and Stock

    Comchip Technology Corporation Ltd CDBD2SC21200-G

    DIODE SIL CARB 1.2KV 6.2A TO263
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CDBD2SC21200-G Tube 381 1
    • 1 $4.3
    • 10 $4.3
    • 100 $4.3
    • 1000 $4.3
    • 10000 $4.3
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    Mouser Electronics CDBD2SC21200-G
    • 1 $3.69
    • 10 $2.21
    • 100 $2
    • 1000 $1.81
    • 10000 $1.8
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    NAC CDBD2SC21200-G Tube 50 1
    • 1 -
    • 10 -
    • 100 $1.84
    • 1000 $1.59
    • 10000 $1.59
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    Micro Commercial Components 2SC2120-Y-AP

    TRANS NPN 30V 0.8A TO92
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    DigiKey 2SC2120-Y-AP Ammo Pack
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    Micro Commercial Components 2SC2120-O-AP

    TRANS NPN 30V 0.8A TO92
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    DigiKey 2SC2120-O-AP Ammo Pack
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    Others 2SC2120

    TRANSISTOR,BJT,NPN,25V V(BR)CEO,800MA I(C),TO-92
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    Quest Components 2SC2120 2
    • 1 $0.96
    • 10 $0.96
    • 100 $0.96
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    2SC2120 Datasheets (32)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC2120 Various Russian Datasheets Transistor Original PDF
    2SC2120 Bharat Electronics Transistor Selection Guide Scan PDF
    2SC2120 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC2120 Micro Electronics Medium Power Amplifiers and Switches Scan PDF
    2SC2120 Micro Electronics Semiconductor Device Data Book Scan PDF
    2SC2120 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC2120 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC2120 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC2120 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC2120 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SC2120 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC2120 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC2120 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC2120 Unknown Cross Reference Datasheet Scan PDF
    2SC2120 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC2120 Panasonic Medium Power Amplifiers and Switches Scan PDF
    2SC2120 Semico Medium Power Transistors Scan PDF
    2SC2120 Toshiba SILICON NPN EPITAXIAL TYPE(PCT PROCESS) Scan PDF
    2SC2120 Toshiba TRANSISTOR (AUDIO POWER AMPLIFIER APPLICATIONS) Scan PDF
    2SC2120 Toshiba NPN Transistor Scan PDF

    2SC2120 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SC2120

    Abstract: No abstract text available
    Text: DC COMPONENTS CO., LTD. 2SC2120 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for audio frequency amplifier applications. TO-92 Pinning .190 4.83 .170(4.33) 1 = Emitter 2 = Collector 3 = Base o


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    2SC2120 500mA, 100mA, 2SC2120 PDF

    2SC2120

    Abstract: 2SA950
    Text: 2SC2120 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 2SC2120 ○ 低周波電力増幅用 単位: mm • 直流電流増幅率が高い。: hFE (1) = 100~320 • B 型プッシュプルで 1 W の出力が得られます。


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    2SC2120 2SA950 SC-43 2SC2120 2SA950 PDF

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    Abstract: No abstract text available
    Text: 2SA950 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA950 Audio Power Amplifier Applications • High hFE: hFE = 100~320 • 1 W output applications • Complementary to 2SC2120 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating


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    2SA950 2SC2120 SC-43 PDF

    IC 7411 DATA SHEET

    Abstract: IC 7411 2sC2120 transistor f 7416 IC 7411 datasheet IC 7416 2SC2120 Voltts IC 7416 datasheet 7411 IC
    Text: TO-92 PLASTIC-ENCAPSULATE TRANSISTORS 2SC2120 TRANSISTOR NPN FEATURES Power dissipation PCM: 0.6W (Tamb=25ºC) Collector Current TO-92 ICM: 0.8A 1. EMITTER Collector-base voltage V 2. COLLECTOR : 35V (BR) CBO Operating and storage junction temperature range


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    2SC2120 500mA, 2SC2120 IC 7411 DATA SHEET IC 7411 2sC2120 transistor f 7416 IC 7411 datasheet IC 7416 Voltts IC 7416 datasheet 7411 IC PDF

    2SC2120

    Abstract: 2SA950
    Text: 2SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2120 Audio Power Amplifier Applications • High hFE: hFE (1) = 100~320 • 1 watts amplifier applications. • Complementary to 2SA950 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics


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    2SC2120 2SA950 2SC2120 2SA950 PDF

    2SA950

    Abstract: 2SC2120
    Text: 2SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2120 Audio Power Amplifier Applications • High hFE: hFE (1) = 100~320 • 1 watts amplifier applications. • Complementary to 2SA950 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics


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    2SC2120 2SA950 SC-43 2SA950 2SC2120 PDF

    2SC2120

    Abstract: 2sC2120 y transistor transistor 2sc2120
    Text: ST 2SC2120 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


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    2SC2120 700mA 500mA, 2SC2120 2sC2120 y transistor transistor 2sc2120 PDF

    2SC2120

    Abstract: 2SA950
    Text: 2SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2120 Audio Power Amplifier Applications • High hFE: hFE (1) = 100~320 • 1 watts amplifier applications. • Complementary to 2SA950 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics


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    2SC2120 2SA950 SC-43 2SC2120 2SA950 PDF

    Plastic Encapsulate Transistors

    Abstract: 2SC2120 2sc2120 equivalent
    Text: 2SC2120 NPN Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter 1 2 Value Units VCBO Collector-Base Voltage


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    2SC2120 100mA 01-Jun-2002 Plastic Encapsulate Transistors 2SC2120 2sc2120 equivalent PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA950-O 2SA950-Y Features x x x x x Complementary Pair With 2SC2120 Epoxy meets UL 94 V-0 flammability rating


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    2SA950-O 2SA950-Y 2SC2120 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC2120-O 2SC2120-Y Features x x x x Complementary Pair With 2SA950 Epoxy meets UL 94 V-0 flammability rating


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    2SC2120-O 2SC2120-Y 2SA950 150rom PDF

    2SA950

    Abstract: 2sa950y 2SA950-Y 2sc212 2SA950 PNP 2SA950-O 2SC2120
    Text: 2SA950 -0.8A , -35V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES   1W output applications Complementary to 2SC2120 G H Emitter Collector Base


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    2SA950 2SC2120 2SA950-O 2SA950-Y 14-Feb-2011 -10mA, -100mA -700mA -500mA, -20mA 2SA950 2sa950y 2SA950-Y 2sc212 2SA950 PNP 2SA950-O 2SC2120 PDF

    2SA950 PNP

    Abstract: 2SA950 2SC2120 35VCEO
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA950 TRANSISTOR PNP TO-92 FEATURES y 1W output applications y complementary to 2SC2120 1.EMITTER 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol


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    2SA950 2SC2120 -100mA -700mA -500mA, -20mA -10mA 2SA950 PNP 2SA950 2SC2120 35VCEO PDF

    2SA950

    Abstract: 2SC2120
    Text: 2SA950 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA950 ○ 低周波電力増幅用 単位: mm • 直流電流増幅率が高い。: hFE = 100~320 • B 級プッシュプルで 1 W の出力が得られます。 • 2SC2120 とコンプリメンタリになります。


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    2SA950 2SC2120 SC-43 2SA950 2SC2120 PDF

    2SA950

    Abstract: 2SC2120
    Text: TOSHIBA 2SA950 2SA950 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO PO W ER AM PLIFIER APPLICATIONS • • • . 5.1 M AX. High hpE : hRE = 100~320 IW Output Applications Complementary to 2SC2120 0.45 0.55 M A X. 0.45 M A X IM U M RATINGS (Ta = 25°C)


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    2SA950 2SC2120 SC-43 2SA950 2SC2120 PDF

    2SC2120-0

    Abstract: 2SA950 2SC2120
    Text: TO SH IBA 2SA950 2SA950 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS • • • . 5.1 MAX. High hpE • hpE = 100~320 IW Output Applications Complementary to 2SC2120 0.45 0.55 MAX. 0.45 MAXIMUM RATINGS (Ta = 25°C)


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    2SA950 2SC2120 SC-43 2SC2120-0 2SA950 2SC2120 PDF

    2SC2120

    Abstract: 2SA950 2sC2120 y transistor transistor 2sc2120
    Text: 2SC2120 TO SH IBA 2 S C 2 1 20 TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS • High hEE : hEE (i) = 100~320 • 1 Watts Amplifier Applications. • Complementary to 2SA950 . 5.1 MAX. 0.45 0.55 MAX.


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    2SC2120 2SA950 SC-43 2SC2120 2SA950 2sC2120 y transistor transistor 2sc2120 PDF

    2SC2120

    Abstract: 2sC2120 transistor
    Text: TOSHIBA TRANSISTOR. SEMICONDUCTOR T O SH IB A TECHNICAL 2 S C 2 1 20 DATA SILICON NPN EPITAXIAL TYPE PCT PROCESS (2SC2120) Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS • • High : hpg (1) = 100—320 1 W atts Amplifier Applications. • P n 'm n lp T M iin fn rv i n 9 ftA Q £ il


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    2SC2120 2SC2120) 2SC2120 2sC2120 transistor PDF

    2SD650

    Abstract: 2SD867 2SC1398 2SC1815 2SC2240 2SD797 2SD2061 2SD642 2s0867 2Sd428
    Text: - 208 - £ Type No. m. tt « Manuf. 2SD 160 ✓ 2SD 161 SANYO 3tí S TOSHIBA 2SC783 m NEC Al HITACHI 2SD1138 *± il 2SD867 2SD797 2SD 165 f tf-y'rv •y-vírv ■y-yírv 2SÜ í68 ✓ s± 3 2SD867 2SD650 H 2S0 170A 2SC2120 2SD468 2SD 162 H ± il FUJITSU tó


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    2SC783 2SD1138 2SD859 2SD2061 2SD867 2SC828 2SD797 2SD650 2SD867 2SC1398 2SC1815 2SC2240 2SD797 2SD2061 2SD642 2s0867 2Sd428 PDF

    2SD454

    Abstract: 2SC901 2SC1667 2SD400 E 2SC2516 NEC 2sc2120 2SD473 2SD647 2s0867 2SD526
    Text: - £ m « it Manuf. Type No. 2SD 439 ^ 2SD 457 * 2SD 459 * 2SD 460 * * 2SD 461 * 2SD 463 — * 2SD 454 ^ 3K SANYO = $ B n 2SC2236 2SC1449 2SD635 2SD970 K 2SD633 2SD970OO %t9 7 C 2SD473(H) 2SD524 2SD473(H) 2SC2120 2SC2001 ED 2SD471 2SD 469 -— m « T a *


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    2SD439 2SD457 2SD642 2SD1196 2SD635 2SD633 2SD657 2SD523 2SC1449 2SC2236 2SD454 2SC901 2SC1667 2SD400 E 2SC2516 NEC 2sc2120 2SD473 2SD647 2s0867 2SD526 PDF

    2SC2120

    Abstract: ZZ25 2SA950 ZZ25IZI
    Text: TOSHIBA_ 2SC2120 2 S C 2 1 20 TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO PO W ER AM PLIFIER APPLICATIONS • • • High hpE • hpE (l) = 100—320 1 Watts Amplifier Applications.


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    2SC2120 2SA950 SC-43 ZZ25IZI 2SC2120 ZZ25 2SA950 ZZ25IZI PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SA950 2SA950 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO PO W ER AM PLIFIER APPLICATIONS • • • . 5.1 M AX. High hpE : hpE = 100~320 IW Output Applications Complementary to 2SC2120 0.45 0.55 M A X. 0.45 M A X IM U M RATINGS (Ta = 25°C)


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    2SA950 2SC2120 SC-43 PDF

    2SA950

    Abstract: 2SA95 C 2120 Y Produced by Perfect Crystal Device Technology
    Text: 2SA 950 5/ U D > P N P l£ 9 * î / ? j l ^ h 5 > 5t t 5 > P C T fia ^ IL IC O N PNP EPITAXIAL o Audio Power Amplifier Applications • : hFB=10 0~3 20 B |R 7" 5» J/ » 7 1a . r 1 W O 6b * f> #1 i +0 2SC2120 t a y ?■i) * ft £ £ t "fo Iff Output Applications


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    2sa950 8S02I20 2S02120 SO-43 228to 2SA950 2SA95 IC/IB-25 C 2120 Y Produced by Perfect Crystal Device Technology PDF

    2SD811 TOSHIBA

    Abstract: 2SC510 2SD2061 2SD877 RY 228 2SD2023 2SD1270 2SD880 2SC2120 2SD867
    Text: * * * * * * i * * * * * * * * * * * * * * * M anuf. a m. X 3E •y-y'ry y-y'ry ■v-yry ■y-yry ■y-yírv yyry € h SANYO 2SD313 2SD313 n jft ^ TOSHIBA 2SC2120 2SD880 2SD880 2SC510 2SC510 2SC510 2SD877 2SD877 2SD877 NEC 2SD795 2SD795 M AL HITACHI 2SC1213


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    2SD228 2SD234 2SD235 2SC236 2SD237 2SD238 2SD241 2SD242 2SD243 2SD244 2SD811 TOSHIBA 2SC510 2SD2061 2SD877 RY 228 2SD2023 2SD1270 2SD880 2SC2120 2SD867 PDF