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    2SD526 Price and Stock

    Samtec Inc T2SD-05-26-L-05.00-D-NUS

    Rectangular Cable Assemblies 2.00 mm Tiger Eye Double Row Discrete Wire Cable Assembly, Terminal
    Free Sample
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    Mouser Electronics T2SD-05-26-L-05.00-D-NUS
    • 1 $9.47
    • 10 $8.75
    • 100 $6.91
    • 1000 $5.85
    • 10000 $5.85
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    Samtec Inc S2SD-05-26-L-05.00-D-NUS

    Rectangular Cable Assemblies 2.00 mm Tiger Eye Double Row Discrete Wire Cable Assembly, Socket
    Free Sample
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics S2SD-05-26-L-05.00-D-NUS
    • 1 $9.93
    • 10 $9.17
    • 100 $7.24
    • 1000 $6.13
    • 10000 $6.13
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    Samtec Inc T2SD-05-26-L-12.00-D-NUS

    Rectangular Cable Assemblies 2.00 mm Tiger Eye Double Row Discrete Wire Cable Assembly, Terminal
    Free Sample
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics T2SD-05-26-L-12.00-D-NUS
    • 1 $10.64
    • 10 $9.83
    • 100 $7.76
    • 1000 $6.57
    • 10000 $6.57
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    Samtec Inc S2SD-05-26-L-12.00-D-NUS

    Rectangular Cable Assemblies 2.00 mm Tiger Eye Double Row Discrete Wire Cable Assembly, Socket
    Free Sample
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics S2SD-05-26-L-12.00-D-NUS
    • 1 $11.09
    • 10 $10.25
    • 100 $8.1
    • 1000 $6.85
    • 10000 $6.85
    		Get Quote

    Others 2SD526

    Bipolar Junction Transistor, NPN Type, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SD526 22
    • 1 $15
    • 10 $7.5
    • 100 $7.5
    • 1000 $7.5
    • 10000 $7.5
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    Find more 2SD526 price and stock on Findchips.com

    2SD526 Datasheets (30)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD526 Various Russian Datasheets Transistor Original PDF
    2SD526 Wing Shing Computer Components NPN EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) Original PDF
    2SD526 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD526 Micro Electronics Semiconductor Device Data Book Scan PDF
    2SD526 Mospec POWER TRANSISTORS(4A,80V,30W) Scan PDF
    2SD526 Mospec NPN Silicon Power Transistor Scan PDF
    2SD526 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SD526 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SD526 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD526 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD526 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD526 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SD526 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD526 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SD526 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD526 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD526 Unknown Transistor Replacements Scan PDF
    2SD526 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD526 Unknown Cross Reference Datasheet Scan PDF
    2SD526 Unknown Catalog Scans - Shortform Datasheet Scan PDF

    2SD526 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB596

    Abstract: 2SD526 2SD52
    Text: JMnic Product Specification 2SB596 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD526 ・Good linearity of hFE APPLICATIONS ・Power amplifier applications ・Recommend for 20～25W high fidelity audio frequency amplifier output stage


    Original     		PDF 2SB596 O-220C 2SD526 2SB596 2SD526 2SD52

    2SB596

    Abstract: pnp hfe 120-240 2SD526
    Text: SavantIC Semiconductor Product Specification 2SB596 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SD526 ·Good linearity of hFE APPLICATIONS ·Power amplifier applications ·Recommend for 20 25W high fidelity audio frequency amplifier output stage


    Original     		PDF 2SB596 O-220C 2SD526 2SB596 pnp hfe 120-240 2SD526

    2sb596

    Abstract: 2SD526 ic audio amplifier 2*5w
    Text: Inchange Semiconductor Product Specification 2SB596 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD526 ・Good linearity of hFE APPLICATIONS ・Power amplifier applications ・Recommend for 20～25W high fidelity


    Original     		PDF 2SB596 O-220C 2SD526 2sb596 2SD526 ic audio amplifier 2*5w

    NPN 80V 3A

    Abstract: 2SA671 2SD526 transistor 2SD526
    Text: 2SD526 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SA671 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)


    Original     		PDF 2SD526 O-220 2SA671 NPN 80V 3A 2SA671 2SD526 transistor 2SD526

    2SD526

    Abstract: 2SB596
    Text: Inchange Semiconductor Product Specification 2SD526 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SB596 ・Good linearity of hFE APPLICATIONS ・Power amplifier applications ・Recommend for 20～25W high fidelity


    Original     		PDF 2SD526 O-220C 2SB596 2SD526 2SB596

    2SD526

    Abstract: 2SB596
    Text: SavantIC Semiconductor Product Specification 2SD526 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SB596 ·Good linearity of hFE APPLICATIONS ·Power amplifier applications ·Recommend for 20 25W high fidelity audio frequency amplifier output stage


    Original     		PDF 2SD526 O-220C 2SB596 2SD526 2SB596

    2SB596

    Abstract: Transistor 2sb596 2SD526 ic audio amplifier 2*5w transistor 2SD526
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB596 DESCRIPTION •Low Collector Saturation Voltage :VCE sat = -1.7(V)(Max)@IC= -3A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -80V(Min) ·Complement to Type 2SD526 APPLICATIONS


    Original     		PDF 2SB596 2SD526 2SB596 Transistor 2sb596 2SD526 ic audio amplifier 2*5w transistor 2SD526

    2SB596

    Abstract: 2SD526
    Text: 2SB596 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SD526 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)


    Original     		PDF 2SB596 O-220 2SD526 2SB596 2SD526

    2sc1815

    Abstract: 2SC4698 2SC930 2SC1684 S 2SC1684 2SC828 2SC2988 2SC387A 2SC829 2SD917
    Text: - m tì: % Type No. Manuf. JÊ « SANYO 2 TOSHIBA 'S NEC B ÎL HITACHI ¡ÜÍ ± iS FUJITSU fò T MATSUSHITA * 2SC lb V - - 2SC 17 3K zsuöza * $ 2SC829 * 2SC 17A M. $ 2SC 18 S 2 2SC829 * * 2SC 21 S 2SC521A * 2SC 22 S m 2SD526 * 2SC 23 - d M 2SD526 a±a * 2SC 26


    OCR Scan     		PDF 2SC829 2SC828 2SC521A 2SD1485 2SD526 2SC1684 2sc1815 2SC4698 2SC930 2SC1684 S 2SC1684 2SC828 2SC2988 2SC387A 2SC829 2SD917

    Untitled

    Abstract: No abstract text available
    Text: V IJ a > P N P = m m 2SB596 •¥-fö : mm 0 3 .6 + 0 .2 3 Wÿ v>0 coÊ MU &Ä • hpE • 2SD526 t : P c = 30W T c = 25°C V' o 7' ') * 'y 9 ') (; &■ <0 i t o 3 > 20~ 25 W ^ ' f 7 7 /í í - f ' í t T > (Ta = 25°C) m g a2 ■§• ÎË i& M f£ VCBO


    OCR Scan     		PDF

    2SB596

    Abstract: 2SD526 AC75 20-25W
    Text: TOSHIBA 2SD526 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD526 Unit in mm PO W ER AM PLIFIER APPLICATIONS 43.6 + 0.2 • • • • High Power Dissipation : P0 = 3OW Te = 25°C Good Linearity of hjrg. Complementary to 2SB596. Recommend for 20~25W High Fidelity Audio Frequency


    OCR Scan     		PDF 2SD526 2SB596. 961001EAA2' 2SB596 2SD526 AC75 20-25W

    transistor D526

    Abstract: D526 d526 y D526 transistor d526 - y 2SD526 toshiba D526 30W AUDIO AMPLIFIER
    Text: TOSHIBA 2SD526 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • • • SILICON NPN TRIPLE DIFFUSED TYPE 2S D526 High Power Dissipation : Pq = 30W T c = 25°C Good Linearity of hpE. Complementary to 2SB596. Recommend for 2Q~25W High Fidelity Audio Frequency


    OCR Scan     		PDF 2SD526 2SB596. O-220AB 50x50x2mm 50X50Xlmm 961001EAA2' transistor D526 D526 d526 y D526 transistor d526 - y 2SD526 toshiba D526 30W AUDIO AMPLIFIER

    2SD526

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD526 Unit in POWER AMPLIFIER APPLICATIONS. 03. 6± O .2 FEATURES : • High Power Dissipation : P C=30W Tc=25°C • Good Lineality of h p E . • Complementary to 2SB596. • Recommended for 20 'v 25W High Fidelity Audio


    OCR Scan     		PDF 2SD526 2SB596. 2SD526

    2SB596 LB

    Abstract: 2SB596 2SD526
    Text: ÆàMOSPEC PNP SILICON POWER TRANSISTORS .designed for use in general power amplifier application FEATURES: * Low Collector-Emitter Saturation Voltage v CE satf 10V(Max @ I c=3.0A,Ib=0.3A * DC Current Gain hFE= 40-240@lc= 0.5A * Complementary to NPN 2SD526


    OCR Scan     		PDF 2SD526 2SB596 2SB596 LB 2SD526

    2SD2061

    Abstract: 2SD880 2SC782 2SD867 2SD877 2SD797 2S0880 2SC782 TOSHIBA 2Sd 123 tl 2SC783
    Text: - m % € tt Manuf. h a m SANYO TOSHIBA m NEC a ti HITACHI * ± FUJITSU a fâ T MA T S U S H I T A £ MITSUBISHI E. □ — A ROHM ¿ou i¿u vn; S ÎL ¿dUd¿0 2SCÍ338 2SD2081 * 2SD 121 H 2SD525 2SC1398 2SD2061 * 2SD 122 0 ÍL a £ 2SD526 2SD1266A 2SD2061


    OCR Scan     		PDF 2SD121 2SD122 2SD123 2SD124 2SC1398 2SD1266A 2SD1264 2SD525 2SD526 2SD2081 2SD2061 2SD880 2SC782 2SD867 2SD877 2SD797 2S0880 2SC782 TOSHIBA 2Sd 123 tl 2SC783

    2SD526

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD526 Unit in mm POWER AMPLIFIER APPLICATIONS. J2Í3.6±0.2 FEATURES : • High Power Dissipation : PC=30W Tc=25°C • Good Linearity of hpg. • Complementary to 2SB596. • Recommended for 20 ^ 25W High Fidelity Audio


    OCR Scan     		PDF 2SD526 2SB596. 2SD526

    Untitled

    Abstract: No abstract text available
    Text: 2SB596 SILICON PNP TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. FEATURES: • Good Linearity of hpj;. ■ Complementary to 2SD526. • Recommended for 20 ^ 25W High-Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC


    OCR Scan     		PDF 2SB596 2SD526.

    2SD636 R

    Abstract: 2SD636 2SB615 2SD650H 2SB613 2SD511 2SD646 2SD637 2SB631 2SD601
    Text: - 220 - Ta=25tC, *EP(àîc=25tC M & 2SD526 t± & ÄS 2SD545 m V'cEO Ic(D C ) Pc Pc* (V) (V) (A) (W) (W) 80 80 4 LF PA 25 25 1 220 180 15 70 50 7 Ä 2 PA/PSW/DDC/Reg 2SD553 Ä S PSW/PA m VCBO PA 2SD552 2SD560 m ICEO (max) (/¿A) 30 0. 6 n k 4$ 14 hF E Vc b


    OCR Scan     		PDF 2SD526 2SD545 2SD552 2SD553 2SD560 2SD568 2SD569 2SD571 2SB639H 2SD629H 2SD636 R 2SD636 2SB615 2SD650H 2SB613 2SD511 2SD646 2SD637 2SB631 2SD601

    2SB596

    Abstract: No abstract text available
    Text: SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2SB596 U nit in mm PO W ER A M PLIFIER APPLIC ATIO N S. • • • 0 3 .6 1 0 .2 Good Linearity of hpg. Complementary to 2SD526. Recommended for 20~25W High-Fidelity Audio Frequency Amplifier Output Stage. M A X IM U M RATIN GS (Ta = 25°C)


    OCR Scan     		PDF 2SB596 2SD526. 100x100x2m 100X100X 2SB596

    2SD588

    Abstract: 2SD427 2SD2006 2SD572 2SC3133 2SC732 2SD586A 2sd573 2SD471 2SC1775
    Text: - a € Type No. a € Manuf. h SANYO n JE 2? TOSHIBA 2SD 565 n B9 B U 2SD 568 a m 2SD1Û61 2SD 569 9 2SD1061 2SD 570 ^ fé T 2SD313 2SD526 2SD 571 b m 2SD863 2SC1627 2SD 558 NEC n 2SD686 a 2SD 560 B B HITACHI ÎL 2SC188KK FUJITSU a fé T MATSUSHITA m h MITSUBISHI


    OCR Scan     		PDF 2SD558 2SD560 2SD565 2SD568 2SD569 2SD570 2SD571 2SD572 2SD573 2SD574 2SD588 2SD427 2SD2006 2SC3133 2SC732 2SD586A 2SD471 2SC1775

    Untitled

    Abstract: No abstract text available
    Text: 2SD526 TOSHIBA 2SD526 TO SHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm 10.3MAX. • • • • • High Power Dissipation : P q = 30W Tc = 25°C Good Linearity of hpg. Complementary to 2SB596. Recommend for 20~25W High Fidelity Audio Frequency


    OCR Scan     		PDF 2SD526 2SB596. 961001EAA2'

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA ÍDISCRETE/OPTO]- 9097250 TOSHIBA Sb DE I c]Dci 7 a S 0 DISCRETE/OPTO 0007334 ÛT334 SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) Unit in mm U3.6±^.2 POWER AMPLIFIER APPLICATIONS. FEATURES: •0- • Good Linearity of hpE• Complementary to 2SD526.


    OCR Scan     		PDF 2SD526.

    transistor 2SD526

    Abstract: 2sd526 2SB596 AC75
    Text: TO SH IBA 2SD526 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SD526 Unit in mm ¿3.6 ±0.2 1 0 .3 M A X . • • • • W r- High Power Dissipation : P0 = 3OW (Te = 25°C Good Linearity of hjpg. Complementary to 2SB596.


    OCR Scan     		PDF 2SD526 2SB596. transistor 2SD526 2sd526 2SB596 AC75

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA { D I S C R ET E/ OP TO } 9097250 TOSHIBA Sb D Ë ^ O ^ S O 5bC 07 7 l ò DISCRETE/OPTO ODD?!^ Ì 0 T - S-3-o; 2SD526 SILICON NPN TRIPLE DIFFUSED TYPE_ Unit in mm POWER AMPLIFIER APPLICATIONS. 0 3 .6±O.2 J .0.3MAX. FEATURES: • High Power Dissipation : Pc=30W (Tc=25°C)


    OCR Scan     		PDF 2SD526 2SB596.