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    2SD238 Search Results

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    2SD2383-T2B-A Renesas Electronics Corporation Bipolar Power Transistors, , / Visit Renesas Electronics Corporation
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    Sanken Electric Co Ltd 2SD2382

    TRANS NPN DARL 65V 6A TO220F
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    Quest Components 2SD2382 704
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    Sanken Electric Co Ltd 2SD2389

    TRANS NPN DARL 150V 8A TO3P
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    Rochester Electronics LLC 2SD2383-T2B-A

    SMALL SIGNAL BIPOLAR TRANSTR NPN
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    Renesas Electronics Corporation 2SD2383-T2B-A

    - Tape and Reel (Alt: 2SD2383-T2B-A)
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    Avnet Americas 2SD2383-T2B-A Reel 4 Weeks 2,442
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    Rochester Electronics 2SD2383-T2B-A 6,000 1
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    Allegro MicroSystems LLC 2SD2389

    Transistor, bjt, darlington, npn,150V V(Br)Ceo,8A I(C),to-247Var |Allegro Sanken 2SD2389
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    2SD238 Datasheets (99)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD238 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD238 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SD238 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD238 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD238 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD238 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD238 Unknown Cross Reference Datasheet Scan PDF
    2SD238 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SD238 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD238 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SD238 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD238 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD2380 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD2380 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD2381 Hitachi Semiconductor Silicon NPN Triple Diffused Transistor Original PDF
    2SD2381 Renesas Technology Silicon NPN Triple Diffused Original PDF
    2SD2381 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD2381 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD2381 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD2381 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    2SD238 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB1559

    Abstract: 2SD2389
    Text: JMnic Product Specification Silicon PNP Darlington Power Transistors 2SB1559 DESCRIPTION ・With TO-3PN package ・Complement to type 2SD2389 APPLICATIONS ・Audio ,regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base


    Original     		PDF 2SB1559 2SD2389 2SB1559 2SD2389

    2SD2389

    Abstract: audio Darlington 6A 2SB1559
    Text: Inchange Semiconductor Product Specification 2SB1559 Silicon PNP Darlington Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2SD2389 APPLICATIONS ・Audio ,regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to


    Original     		PDF 2SB1559 2SD2389 2SD2389 audio Darlington 6A 2SB1559

    2SB1558

    Abstract: 2SD2387
    Text: Inchange Semiconductor Product Specification 2SB1558 Silicon PNP Darlington Power Transistors DESCRIPTION ・With TO-3PI package ・Complement to type 2SD2387 APPLICATIONS ・For power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to


    Original     		PDF 2SB1558 2SD2387 2SB1558 2SD2387

    2SD2386

    Abstract: 2SB1557 NPN POWER DARLINGTON TRANSISTORS
    Text: SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2386 DESCRIPTION •With TO-3P I package ·Complement to type 2SB1557 ·High breakdown voltage:VCEO=140V(Min) APPLICATIONS ·Power amplifier applications PINNING PIN DESCRIPTION


    Original     		PDF 2SD2386 2SB1557 2SD2386 2SB1557 NPN POWER DARLINGTON TRANSISTORS

    B1557

    Abstract: 2SB1557 2SD2386
    Text: 2SB1557 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington Power Transistor 2SB1557 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SD2386 Maximum Ratings (Tc = 25°C) Characteristics Symbol


    Original     		PDF 2SB1557 2SD2386 2-16C1A B1557 2SB1557 2SD2386

    D2387

    Abstract: transistor D2387 data sheet 2SB1558 2SD2387 ICA350 transistor D2387
    Text: 2SD2387 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD2387 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1558 Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF 2SD2387 2SB1558 2-16C1A D2387 transistor D2387 data sheet 2SB1558 2SD2387 ICA350 transistor D2387

    2-21F1A

    Abstract: 2SB1555 2SD2384
    Text: 2SD2384 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD2384 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1555 Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF 2SD2384 2SB1555 2-21F1A 2-21F1A 2SB1555 2SD2384

    2SD2386

    Abstract: 2SB1557 npn DARLINGTON 10A
    Text: Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2386 DESCRIPTION •With TO-3P I package ·Complement to type 2SB1557 ·High breakdown voltage:VCEO=140V(Min) APPLICATIONS ·Power amplifier applications PINNING PIN DESCRIPTION


    Original     		PDF 2SD2386 2SB1557 2SD2386 2SB1557 npn DARLINGTON 10A

    STA508A

    Abstract: STA509A 2sd2141 2sd2382 2sc3852 STA463C STA415A fn812 SDC09 smd 18w
    Text: Transistors and MOS FETs Transistors and MOS FETs by Application Application Page Igniters 2SD2141 58 57 Injectors 2SC4153 2SD2382 STA461C STA463C STA508A SDC09 AT Automatic Transmissions 2SA1488 2SA1488A 50 52 Cruise controls 2SA1568 2SC4065 SLA8004 2SA1567


    Original     		PDF 2SD2141 2SC4153 2SD2382 STA461C STA463C STA508A SDC09 2SA1488 2SA1488A 2SA1568 STA509A 2sc3852 STA415A fn812 smd 18w

    2SD2389

    Abstract: HIGH VOLTAGE SWITCHING NPN POWER DARLINGTON npn DARLINGTON 10A npn darlington audio Darlington 6A 2SB1559
    Text: SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2389 DESCRIPTION •With TO-3PN package ·Complement to type 2SB1559 ·High DC current gain APPLICATIONS ·Audio ,regulator and general purpose PINNING PIN DESCRIPTION


    Original     		PDF 2SD2389 2SB1559 2SD2389 HIGH VOLTAGE SWITCHING NPN POWER DARLINGTON npn DARLINGTON 10A npn darlington audio Darlington 6A 2SB1559

    2SB1556

    Abstract: No abstract text available
    Text: 2SB1556 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington Power Transistor 2SB1556 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SD2385 Maximum Ratings (Tc = 25°C) Characteristics Symbol


    Original     		PDF 2SB1556 2SD2385 2-21F1A 2SB1556

    D2386

    Abstract: D2386 TOSHIBA 2SB1557 2SD2386
    Text: 2SD2386 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD2386 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1557 Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF 2SD2386 2SB1557 2-16C1A D2386 D2386 TOSHIBA 2SB1557 2SD2386

    2-16C1A

    Abstract: No abstract text available
    Text: SILICON PNP EPITAXIAL TYPE DARLINGTON POWER 5 5 8 U nit in mm POWER AMPLIFIER APPLICATIONS 15 9 V i A X • • )S3.2 ♦ 0.2 High Breakdown Voltage : V cE O = —140V (Min.) Complementary to 2SD2387 M A X IM U M RATINGS (Ta = 25°C) SYMBOL VCBO VCEO v EBO


    OCR Scan     		PDF --140V 2SD2387 100fl -140V --50mA, --12A 2-16C1A

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TOSHIBA TRANSISTOR 2SB1555 SILICON PNP EPITAXIAL TYPE DARLINGTON PO W ER TRANSISTOR 2 S B 1 555 O PO W ER AM PLIFIER APPLICATIONS • • High Breakdown Voltage : V q e O = —140V (Min.) Complementary to 2SD2384 M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SB1555 2SD2384

    2SB1557

    Abstract: 2SD2386
    Text: TO SH IBA 2SB1557 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 2 S B 1 557 Unit in mm POWER AMPLIFIER APPLICATIONS • • 03.2 ±0.2 1 5.9 M A X . High Breakdown Voltage : VcEO = —140 V (Min.) Complementary to 2SD2386 MAXIMUM RATINGS (Tc = 25°C)


    OCR Scan     		PDF 2SB1557 2SD2386 2SB1557

    2SB1558

    Abstract: 2SD2387
    Text: TO SH IBA 2SD2387 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS 2SD2387 Unit in mm 1 5.9 M A X . • • High Breakdown Voltage : VcEO = 140 V (Min.) Complementary to 2SB1558 t> 03.2 ±0.2 -Ú


    OCR Scan     		PDF 2SD2387 2SB1558 2SB1558 2SD2387

    2SB1555

    Abstract: 2-21F1A 2SD2384
    Text: TO SH IBA TOSHIBA TRANSISTOR 2SB1555 SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 2 S B 1 555 O POWER AMPLIFIER APPLICATIONS • • High Breakdown Voltage : V^EO = —140V (Min.) Complementary to 2SD2384 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF 2SB1555 --140V 2SD2384 2SB1555 2-21F1A

    TOSHIBA Transistor Silicon PNP Epitaxial Type

    Abstract: 2SB1557 2SD2386
    Text: 2SB1557 TOSHIBA TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE D ARLING TO N POWER TRANSISTOR 2 S B 1 557 Unit in mm POWER AMPLIFIER APPLICATIONS • • 3.2 ± 0 .2 15.9M AX High Breakdown Voltage : VcEO = —140V (Min.) Complementary to 2SD2386 M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SB1557 --140V 2SD2386 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1557

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SD2384 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR 2SD2384 O POWER AMPLIFIER APPLICATIONS • • High Breakdown Voltage : V^EO —140V (Mm.) Complementary to 2SB1555 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF 2SD2384 --140V 2SB1555

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TOSHIBA TRANSISTOR 2SD2386 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 2SD2386 PO W ER AM PLIFIER APPLICATIONS Unit in mm .2 + 0.2 15.9MAX. • High Breakdown Voltage : V^EO = 140V (Min.) • Complementary to 2SB1557 ^o 1 , / J- f / i k A 5


    OCR Scan     		PDF 2SD2386 2SB1557

    2SB1557

    Abstract: 2SD2386
    Text: TOSHIBA TOSHIBA TRANSISTOR 2SD2386 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 2SD2386 Unit in mm PO W ER AM PLIFIER APPLICATIONS ' V, 1 5.9 M A X _ • • High Breakdown Voltage : VcEO = 140 V (Min.) Complementary to 2SB1557 03.2 ±0.2


    OCR Scan     		PDF 2SD2386 2SB1557 2SD2386

    2SB1558

    Abstract: 2SD2387
    Text: TOSHIBA 2SB1558 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2 S B 1 55 8 Unit in mm 3.2 ±0.2 15.9MAX. High Breakdown Voltage : V^EO = —140 V (Min.) Complementary to 2SD2387 MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SB1558 2SD2387 2SB1558

    a1000n

    Abstract: common emitter amplifier 2-21F1A 2SB1556 2SD2385
    Text: TOSHIBA 2SB1556 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 2SB1 556 O POWER AMPLIFIER APPLICATIONS • • High Breakdown Voltage : V^EO = —140V (Min.) Complementary to 2SD2385 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF 2SB1556 2SD2385 a1000n common emitter amplifier 2-21F1A 2SB1556 2SD2385

    2SB1557

    Abstract: 2SD2386
    Text: TO SH IBA 2SB1557 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 2 S B 1 557 Unit in mm POWER AMPLIFIER APPLICATIONS • • 15.9MAX High Breakdown Voltage : VcEO = —140 V (Min.) Complementary to 2SD2386 3.2 ±0.2 MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SB1557 2SD2386 2SB1557