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    2SB1558 Search Results

    2SB1558 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB1558 Unknown Silicon PNP-darlington transistor Scan PDF
    2SB1558 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1558 Unknown Scan PDF
    2SB1558 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1558 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1558 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB1558 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1558 Toshiba Silicon PNP transistor for power amplifier applications Scan PDF
    2SB1558A Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB1558B Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB1558C Unknown Transistor Shortform Datasheet & Cross References Scan PDF

    2SB1558 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB1558

    Abstract: 2SD2387
    Text: Inchange Semiconductor Product Specification 2SB1558 Silicon PNP Darlington Power Transistors DESCRIPTION ・With TO-3PI package ・Complement to type 2SD2387 APPLICATIONS ・For power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to


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    PDF 2SB1558 2SD2387 2SB1558 2SD2387

    D2387

    Abstract: transistor D2387 data sheet 2SB1558 2SD2387 ICA350 transistor D2387
    Text: 2SD2387 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD2387 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1558 Maximum Ratings (Ta = 25°C) Characteristics


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    PDF 2SD2387 2SB1558 2-16C1A D2387 transistor D2387 data sheet 2SB1558 2SD2387 ICA350 transistor D2387

    transistor D2387

    Abstract: D2387 2SD2387 2sd2387 data sheet transistor D2387 data sheet 2SB1558
    Text: 2SD2387 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD2387 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1558 Maximum Ratings (Ta = 25°C) Characteristics


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    PDF 2SD2387 2SB1558 2-16C1A transistor D2387 D2387 2SD2387 2sd2387 data sheet transistor D2387 data sheet 2SB1558

    2SB1558

    Abstract: 2SD2387 TO-3PI
    Text: SavantIC Semiconductor Product Specification Silicon PNP Darlington Power Transistors 2SB1558 DESCRIPTION •With TO-3PI package ·Complement to type 2SD2387 APPLICATIONS ·For power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to


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    PDF 2SB1558 2SD2387 -140V; 2SB1558 2SD2387 TO-3PI

    B1558

    Abstract: 2SB1558 2SD2387 2SB1558 TOSHIBA
    Text: 2SB1558 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington Power Transistor 2SB1558 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SD2387 Maximum Ratings (Tc = 25°C) Characteristics Symbol


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    PDF 2SB1558 2SD2387 2-16C1A B1558 2SB1558 2SD2387 2SB1558 TOSHIBA

    2SB1558

    Abstract: 2SD2387
    Text: JMnic Product Specification Silicon PNP Darlington Power Transistors 2SB1558 DESCRIPTION ・With TO-3PI package ・Complement to type 2SD2387 APPLICATIONS ・For power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base


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    PDF 2SB1558 2SD2387 -140V; 2SB1558 2SD2387

    Untitled

    Abstract: No abstract text available
    Text: 2SD2387 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD2387 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1558 Absolute Maximum Ratings (Ta = 25°C) Characteristics


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    PDF 2SD2387 2SB1558 2-16C1A

    2SC4793 2sa1837

    Abstract: 100 amp npn darlington power transistors 2sC5200, 2SA1943 10 amp npn darlington power transistors 2sC5200, 2SA1943, 2sc5198 2SC4684 datasheets 2sa1930 transistor equivalent 2sc5200 2SB906-Y 2sc3303
    Text: Part Number 2SC1627A 2SA817A 2SC2235 2SA965 2SC3665 2SA1425 2SC5174 2SA1932 2SC3423 2SA1360 2SC3421 2SA1358 2SC2983 2SA1225 2SC4793 2SA1837 2SC5171 2SA1930 2SC5196 2SA1939 2SC5197 2SA1940 2SC5198 2SA1941 2SD2386 2SB1557 2SD2387 2SB1558 2SD2636 2SB1682 2SC4688


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    PDF 2SC1627A 2SA817A 2SC2235 2SA965 2SC3665 2SA1425 2SC5174 2SA1932 2SC3423 2SA1360 2SC4793 2sa1837 100 amp npn darlington power transistors 2sC5200, 2SA1943 10 amp npn darlington power transistors 2sC5200, 2SA1943, 2sc5198 2SC4684 datasheets 2sa1930 transistor equivalent 2sc5200 2SB906-Y 2sc3303

    D2387

    Abstract: 2SB1558 2SD2387 transistor D2387
    Text: 2SD2387 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD2387 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 140 V (min) · Complementary to 2SB1558 Maximum Ratings (Ta = 25°C) Characteristics Symbol


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    PDF 2SD2387 2SB1558 2-16C1A D2387 2SB1558 2SD2387 transistor D2387

    2SB1558 TOSHIBA

    Abstract: B1558
    Text: 2SB1558 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington Power Transistor 2SB1558 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SD2387 Absolute Maximum Ratings (Tc = 25°C) Characteristics


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    PDF 2SB1558 2SD2387 2-16C1A 2SB1558 TOSHIBA B1558

    2SB1558

    Abstract: 2SD2387
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 5000 Min @IC= -7A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -7A ·Complement to Type 2SD2387 APPLICATIONS


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    PDF 2SD2387 -140V; 2SB1558 2SD2387

    2SB1558

    Abstract: 2SD2387
    Text: TO SH IBA 2SD2387 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS 2SD2387 Unit in mm 1 5.9 M A X . • • High Breakdown Voltage : VcEO = 140 V (Min.) Complementary to 2SB1558 t> 03.2 ±0.2 -Ú


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    PDF 2SD2387 2SB1558 2SB1558 2SD2387

    2SB1558

    Abstract: 2SD2387
    Text: TOSHIBA 2SB1558 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2 S B 1 55 8 Unit in mm 3.2 ±0.2 15.9MAX. High Breakdown Voltage : V^EO = —140 V (Min.) Complementary to 2SD2387 MAXIMUM RATINGS (Ta = 25°C)


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    PDF 2SB1558 2SD2387 2SB1558

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SD2387 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2SD2387 High Breakdown Voltage : VcEO = 140 V (Min.) Complementary to 2SB1558 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


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    PDF 2SD2387 2SB1558

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER _ 2SD2387 POW ER AM PLIFIER APPLICATIONS j, Unit in nun 3.2 t 0-3 • • High Breakdown Voltage : V c e O = 140V (Min.) Complementary to 2SB1558 i= M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


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    PDF 2SD2387 2SB1558

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TOSHIBA TRANSISTOR 2SD2387 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 2SD2387 PO W ER AM PLIFIER APPLICATIONS U nit in mm .2 + 0.2 15.9MAX. • High Breakdown Voltage : V^EO = 140V (Min.) • Complementary to 2SB1558 ^o 1 , /


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    PDF 2SD2387 2SB1558

    2SB1558

    Abstract: 2SD2387
    Text: TOSHIBA TOSHIBA TRANSISTOR 2SD2387 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON PO W ER TRANSISTOR 2SD2387 Unit in mm PO W ER AM PLIFIER APPLICATIONS ' V, 1 5.9 M A X _ • • High Breakdown Voltage : VcEO = 140 V (Min.) Complementary to 2SB1558 03.2 ±0.2


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    PDF 2SD2387 2SB1558 2SD2387

    2SB1558

    Abstract: 2SD2387
    Text: TO SH IBA 2SD2387 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS 2SD2387 Unit in mm 1 5.9 M A X . • • 03.2 ± 0.2 High Breakdown Voltage : VcEO = 140 V (Min.) Complementary to 2SB1558 MAXIMUM RATINGS (Ta = 25°C)


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    PDF 2SD2387 2SB1558 2SD2387

    2SB1558

    Abstract: 2SD2387
    Text: TOSHIBA TOSHIBA TRANSISTOR 2SB1558 SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 2 S B 1 558 Unit in mm POWER AMPLIFIER APPLICATIONS • • 15.9MAX. High Breakdown Voltage : VcEO = —140 V (Min.) Complementary to 2SD2387 A. eÆ A rsi I eri n M AXIM UM RATINGS (Tc = 25°C)


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    PDF 2SB1558 2SD2387 2SB1558 2SD2387

    2SB1558

    Abstract: 2SD2387
    Text: TO SH IBA 2SB1558 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 2 S B 1 558 Unit in mm POWER AMPLIFIER APPLICATIONS • • 15.9MAX High Breakdown Voltage : V^EO = —140 V (Min.) Complementary to 2SD2387 3.2 ±0.2 MAXIMUM RATINGS (Ta = 25°C)


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    PDF 2SB1558 2SD2387 2SB1558

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SB1558 SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2SB1 558 Unit in mm 15.9MAX. High Breakdown Voltage : V£EO = —140V (Min.) Complementary to 2SD2387 ^o 1 , / — J- f / ik A 5 MAXIMUM RATINGS (Ta = 25°C)


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    PDF 2SB1558 --140V 2SD2387

    2sb1355

    Abstract: 2SB1493 2SB1516 2SA1842 2sb1261 2SB906 2SB1328 2SB1329 2SB1332 2SA1770
    Text: - m € Type No. 2S5 1541 2SB 1542 2S8 1543 2SB 1544 2SB 1545 2SB 1546 2SB 1548 ^ 2SB 1549 2SB 1550 2SB 1551 2SB 1552 2SB 1553 2SB i554 2SB 1555 2S8 1556 2SB 1557 2SB 1558 2SB 1559 2SB 1561 2SB 1562 2SB 1563 2SB 1564 2SB 1565 2SB 1566 ^ 2SB 1567 2SB 1568 ^


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    PDF 2SR562 2SB1329 2SA1706 2SB1433 2SB1517 2SA1707 2SA1708 2SB1459 2SB1332 2sb1355 2SB1493 2SB1516 2SA1842 2sb1261 2SB906 2SB1328 2SB1329 2SB1332 2SA1770

    15J102

    Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
    Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811


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    PDF 2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


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    PDF T258-OMI FAX06 2SC144 2SD466 2sc5266