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    2N3999 Price and Stock

    Microchip Technology Inc 2N3999

    TRANS NPN 80V 5A TO-59
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    Microchip Technology Inc JAN2N3999

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    Microchip Technology Inc JANTX2N3999

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    Microchip Technology Inc JANTXV2N3999

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    Microchip Technology Inc JANTXV2N3999P

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    2N3999 Datasheets (49)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N3999 Microsemi NPN POWER SWITCHING SILICON TRANSISTOR Original PDF
    2N3999 Semico Chip Type 2C5154 Geometry 9201 Polarity NPN - Pol=NPN / Pkg=TO59 / Vceo=80 / Ic=5 / Hfe=80-240 / fT(Hz)=40M / Pwr(W)=30 Original PDF
    2N3999 API Electronics 5 Amp NPN-PNP Pigro Silicon Planar Power Transistors, TO-111 Scan PDF
    2N3999 API Electronics Short form transistor data Short Form PDF
    2N3999 General Diode Transistor Selection Guide Scan PDF
    2N3999 General Transistor Power Transistor Selection Guide Scan PDF
    2N3999 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N3999 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N3999 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N3999 Unknown Shortform Electronic Component Datasheets Short Form PDF
    2N3999 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N3999 Unknown Vintage Transistor Datasheets Scan PDF
    2N3999 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N3999 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N3999 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N3999 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N3999 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N3999 Unknown Transistor Replacements Scan PDF
    2N3999 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N3999 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    2N3999 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N3996

    Abstract: 2N3997 2N3999 1000C 2N3998
    Text: TECHNICAL DATA 2N3996 JAN, JTX, JTXV 2N3997 JAN, JTX, JTXV 2N3998 JAN, JTX, JTXV 2N3999 JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/374 NPN POWER SWITCHING SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage


    Original     		2N3996 2N3997 2N3998 2N3999 MIL-PRF-19500/374 1000C 2N3996, 2N3998 2N3997, 2N3999 1000C PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3999 Chip: geometry 9201; polarity NPN 14.14 Transistors Transistor. 1 of 1 Home Part Number: 2N3999 Online Store 2N3999 Diodes C hip: geo m et ry 9 2 0 1 ; po larit y NPN Transistors Enter code INTER3 at


    Original     		2N3999 com/2n3999 2N3999 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3999 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • High-speed power switching • Power transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3999J • JANTX level (2N3999JX)


    Original     		2N3999 MIL-PRF-19500 2N3999J) 2N3999JX) 2N3999JV) MIL-STD-750 MIL-PRF-19500/374 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3999 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • High-speed power switching • Power transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3999J


    Original     		2N3999 MIL-PRF-19500 2N3999J) 2N3999JX) 2N3999JV) MIL-STD-750 MIL-PRF-19500/374 PDF

    2N3999SMD

    Abstract: No abstract text available
    Text: 2N3999SMD Dimensions in mm inches . 0.89 (0.035) min. 3.60 (0.142) Max. 3 16.02 (0.631) 15.73 (0.619) 4.14 (0.163) 3.84 (0.151) 3.70 (0.146) 3.41 (0.134) 1 10.69 (0.421) 10.39 (0.409) 0.76 (0.030) min. 3.70 (0.146) 3.41 (0.134) Bipolar NPN Device in a Hermetically sealed


    Original     		2N3999SMD O276AB) 15-Aug-02 2N3999SMD PDF

    2N3999

    Abstract: 2N3999J 2N3999JV 2N3999JX
    Text: 2N3999 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • High-speed power switching • Power transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3999J


    Original     		2N3999 MIL-PRF-19500 2N3999J) 2N3999JX) 2N3999JV) MIL-STD-750 MIL-PRF-19500/374 2N3999 2N3999J 2N3999JV 2N3999JX PDF

    2N3999SMD05

    Abstract: SMD05
    Text: 2N3999SMD05 Dimensions in mm inches . 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) 3.05 (0.120) 0.127 (0.005) 3 10.16 (0.400) 5.72 (.225) 0.76 (0.030) min. 1 Bipolar NPN Device in a Hermetically sealed Ceramic Surface Mount


    Original     		2N3999SMD05 O276AA) 15-Aug-02 2N3999SMD05 SMD05 PDF

    SDT85502

    Abstract: SDT849 a/TO111 2N5002 SDT3403 SDT6314 BU208 2N2657 2N2877 2N2879
    Text: Device Type VCEO 2N2657 2N2658 2N2877 2N2878 2N2879 2N2880 2N2890 2N2891 2N3744 2N3745 2N3746 2N3747 2N3748 2N3749 2N3750 2N3751 2N3752 2N3996 2N3997 2N3998 2N3999 2N4111 2N4112 2N4113 2N4150 2N4305 2N4307 2N4309 2N4311 2N4395 2N4396 2N4895 2N4896 2N4897 2N4913


    Original     		2N2657 2N2658 2N2877 2N2878 2N2879 2N2880 2N2890 2N2891 2N3744 2N3745 SDT85502 SDT849 a/TO111 2N5002 SDT3403 SDT6314 BU208 2N2657 2N2877 2N2879 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPACE POWER ST ELECTRONICS ]>E|fl4M03SS 0DDD105 fl | 7 3 3-« / s Hi-Rel PLANAR POWER - 5 AMP NPN TO-3 60W@T =100°C 30W@T =100°C r C C Breakdown Voltages TYPE 2N3850 2N3851 2N3852 2N3853 2N3878 2N3879 2N3928 2N3929 2N3996 2N3997 2N3998 2N3999 2N4231 2N4232


    Original     		fl4M03SS 0DDD105 2N3850 2N3851 2N3852 2N3853 2N3878 2N3879 2N3928 2N3929 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3999+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)5.0ux @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		2N3999 Freq40M req40M PDF

    SPHV402

    Abstract: 2N3853
    Text: SPACE POWER ST ELECTRONICS ]>E|fl4M03SS 0DDD105 fl | 7 3 3-« / s Hi-Rel PLANAR POWER - 5 AMP NPN TO-3 60W@T =100°C 30W@T =100°C r C C Breakdown Voltages TYPE 2N3850 2N3851 2N3852 2N3853 2N3878 2N3879 2N3928 2N3929 2N3996 2N3997 2N3998 2N3999 2N4231 2N4232


    Original     		fl4M03SS 0DDD105 2N3850 2N3851 2N3852 2N3853 2N3878 2N3879 2N3928 2N3929 SPHV402 PDF

    TO111

    Abstract: 2N3850 2N3928 2N43 2N4231 TO-111
    Text: high-rei power transistors 84 SILICON NPN TRANSISTORS 5 Amp BREAKDOWN VOLTAGE TYPE NUMBER CASE SIZE VeB VCE VEB 2N3850 2N3851 2N3852 2N3853 2N3878 2N3879 2N3928 2N3929 2N3996 2N3997 2N3998 2N3999 2N4231 2N4232 2N4233 2N4300 2N4913 2N4914 2N4915 2N4998 2N5000


    Original     		2N3850 2N3851 2N3852 2N3853 2N3878 2N3879 2N3928 2N3929 2N3996 2N3997 TO111 2N43 2N4231 TO-111 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPACE POWER ST ELECTRONICS ]>E|fl4M03SS 0DDD105 fl | 7 3 3-« / s Hi-Rel PLANAR POWER - 5 AMP NPN TO-3 60W@T =100°C 30W@T =100°C r C C Breakdown Voltages TYPE 2N3850 2N3851 2N3852 2N3853 2N3878 2N3879 2N3928 2N3929 2N3996 2N3997 2N3998 2N3999 2N4231 2N4232


    Original     		fl4M03SS 0DDD105 2N3850 2N3851 2N3852 2N3853 2N3878 2N3879 2N3928 2N3929 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3999+JANS Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)5.0ux @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		2N3999 Freq40M eq40M PDF

    TO111

    Abstract: 2N2877 2N2878 2N2879 2N2880 2N3998 2N3999 PG2265 PG2266 PG2267
    Text: .&^is¿$ A P I — !1 _ _ ^ ELECTRONICS .'. ""” . INC ^ —“ ^*- tm ''’ 00435*15 Id UOOOOOT [ ; 5 AMP 90 VOLT ,3 V 30 WATT •j ! ?lSa NPN Type 2N2877 2N2878 2N2879 2N2880 2N3998 2N3999 ‘ PG1250 PG1251 PG1252 PG1253 PG1254 PG1255 PG1256


    OCR Scan     		2N2877 PG2265 2N2878 PG2266 2N2879 PG2267 2N2880 PG2268 2N3998 PG2252 TO111 2N3999 PG2265 PG2266 PG2267 PDF

    2N3907

    Abstract: No abstract text available
    Text: 4ÖE D • A1331Ö7 GÜD0437 SEMELABr TbS H S n L B SEflELAB LTD 7^ 27. BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Number Rel Code 2N3879 2N3907 2N3919 2N3962 2N3963 2N3964 2N3965 2N3996 2N3997 2N3998 2N3999 2N4000 2N4001 2N4026 2N4027 2N4028


    OCR Scan     		A1331Ã D0437 2N3879 2N3907 2N3919 2N3962 2N3963 2N3964 2N3965 2N3996 2N3907 PDF

    2N3996

    Abstract: 2n3997 L6228
    Text: POWER TRANSISTORS JAN, JAN, JAN, JAN, 5 Amp, 80V,Planar NPN JANTX, JANTX, JANTX, JANTX, & JANTXV & JANTXV & JANTXV & JANTXV 2N3996 2N3997 2N3998 2N3999 FEATU RES D ESCRIPTIO N • • • • • Unitrode power transistors provide a unique combination of low saturation


    OCR Scan     		2N3996 2N3997 2N3998 2N3999 MIL-S-19500/374* 100mA L6228 PDF

    2N3996

    Abstract: 2N3999 N3998 2N3997 2N3998 UNITRODE TRANSISTORS JANTXV2N3999 2N3997 JAN to-111
    Text: POWER TRANSISTORS JAN, JAN, JAN, JAN, 5 Amp, 80V, Planar NPN JANTX, JANTX, JANTX, JANTX, & JANTXV & JANTXV & JANTXV & JANTXV 2N3996 2N3997 2N3998 2N3999 FEATURES D ESCRIPTION • • • • • U nitrode power tra n sistors provide a u niq u e co m b in ation of low saturation


    OCR Scan     		2N3996 2N3997 2N3998 2N3999 MIL-S-19500/374* 2N3996, 2N3997, 2N3998, 100mA 2N3999 N3998 UNITRODE TRANSISTORS JANTXV2N3999 2N3997 JAN to-111 PDF

    TIP-561

    Abstract: TIP512 tip561 tip558 n538 TIP55 TIP622 TIP5 TIP511 TIP-555
    Text: i Metal Can Power Case Outlines High Reliability P ro fe ssio n i Types continued Device Type ' Polarity Outline Continuous Ic A TIP554 TIP555 TIP556 2N5938 TIP509 TIP511 TIP610 T1P512 2N4913 2N4914 TIP620 TIP625 2N2880 2N5385 2N3996 2N3997 2N3998 2N3999


    OCR Scan     		TC-25-C TC-100 TIP554 TIP555 TIP656 2N5938 TIP609 TIP511 TIP512 2N4913 TIP-561 tip561 tip558 n538 TIP55 TIP622 TIP5 TIP-555 PDF

    Untitled

    Abstract: No abstract text available
    Text: t^ y J A P I _ _ _ _ _ ' _ _ _ ELECTRONICS INC _ - • Low saturation voltage at maximum collector current • High frequency ft = 70 MHz typical • High voltage, B V ceo <«.) to 9 0 volts hF E s.y«., íM 2N3999 I PG1250 PG1251 PG1252 PG1253 PG1254


    OCR Scan     		2N2877 2N2878 2N3998 2N3999 PG1250 PG1251 PG1252 PG1253 PG1254 PG1255 PDF

    TO111

    Abstract: PG1264 PG2250 2N2877 2N2878 2N2879 2N2880 2N3998 2N3999 PG2265
    Text: .&^is¿$ A P I — !1 _ _ ^ ELECTRONICS .'. ""” . INC ^ —“ ^*- tm ''’ 00435*15 Id UOOOOOT [ ; 5 AMP 90 VOLT ,3 V 30 WATT •j ! ?lSa NPN Type 2N2877 2N2878 2N2879 2N2880 2N3998 2N3999 ‘ PG1250 PG1251 PG1252 PG1253 PG1254 PG1255 PG1256


    OCR Scan     		2N2877 PG2265 2N2878 PG2266 2N2879 PG2267 2N2880 PG2268 2N3998 PG2252 TO111 PG1264 PG2250 2N3999 PG2265 PDF

    2N4033

    Abstract: 2n4026
    Text: fll331fl7 QDDQDlfl T • S N L B 37E D SEMELAB LTD ' IVpe No. Reliability Polarity Option 2N3997 2N3998 2N3999 2N4000 2N4001 HI-REL HI-REL HI-REL HI-REL HI-REL NPN NPN NPN NPN NPN * * * * T0111 T059 T059 T039 T039 80 80 80 80 100 2N4012 2N4026 2N4027 2N4028


    OCR Scan     		fll331fl7 2N3997 2N3998 2N3999 2N4000 2N4001 2N4012 2N4026 2N4027 2N4028 2N4033 PDF

    2N5415

    Abstract: No abstract text available
    Text: p^ [D [yj©Tf -Ætttron ©ä t ä [l Devices. Inc. J A N , J A N T X , J A N T X V P O W E R T R A N S IS T O R S (P L A N A R ] DEVICE TYPE MIL-S19500/ VCEO VOLTS IC (CONT.) AMPS POWER (@TC = 25“C) WATTS CASE TYPE CHIP TYPE 2N2880 2N3418 2N3419 2N3420


    OCR Scan     		O-111 O-5/39 O-114 2N5415 PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF