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    2N4053 Search Results

    2N4053 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N4053 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N4053 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N4053 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N4053 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N4053 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N4053 Unknown Vintage Transistor Datasheets Scan PDF
    2N4053 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N4053 Solidev Semiconductors Solid State Products (Transistor Guide) Scan PDF

    2N4053 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: 2N4053 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)75 I(C) Max. (A)60 Absolute Max. Power Diss. (W)170 Maximum Operating Temp (øC)125õ I(CBO) Max. (A)4.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2N4053 StyleTO-36

    2N4048

    Abstract: pnp germanium to36 2N2156 2N4050 T1809 germanium 2N2152 2N2359 TO36 2N4053
    Text: 59 GERMANIUM POWER TRANSISTORS C U R R E f JT G A IN SA T U R A T IO M V O LT A G ES @> @ TYPE N U M BER C A SE T YPE VCBO V V CEO V C ER V V EBO V 30 AM P GE 3MAN UM P VIP V C ES V M IN . hl:E | M AX. V CE V I 'c A V C E s V BE(s> V I V ’c A 'b I A Observe (—) Negative Polarity


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    PDF 2N2152 2N2153 2N2154 2N2156 2N2157 2N2158 2N1520 2N1521 2N1157 2N1157A 2N4048 pnp germanium to36 2N2156 2N4050 T1809 germanium 2N2152 2N2359 TO36 2N4053

    1N5438

    Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
    Text: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­


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    PDF 27TfC 1N5438 tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175

    2N3800

    Abstract: germanium diode germanium tu 38 e 2n4051 motorola 2N4280 2N3980 1N3492 MC710F 2N4276 2n3817
    Text: DATA BDI S U P P L E M E NT This is the second supplement to the 2nd Edition of the Semiconductor Data Book originally published in August 1966. It is produced to keep an up-to-date listing of the most advanced semiconductor products. D evices characterized in this supplement include only the type numbers in tro­


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    PDF 29B52595F13 52595F09 2N3800 germanium diode germanium tu 38 e 2n4051 motorola 2N4280 2N3980 1N3492 MC710F 2N4276 2n3817

    2n2153

    Abstract: 2N2152 2N1522 TO41 germanium power transistors TO36 germanium PNP 2N1167 2N2287 2N1163
    Text: GERMANIUM POWER TRANSISTORS CURRENT G A IN Type Number Case Type YCBO V V e to V V,.o V V c t, V Vca V h FE Min. YcE Max. V Ic A SA TVRA TION VOL TA GES Yc£Ij Y 11f . . / c @ Ib V V A A 0,-C "C /W 25 AMP GERMANIUM PNP Cont.) 2NI162A 2N1163 2N1163A 2N1164


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    PDF 2N1162A 2N1163 2N1163A 2N1164 2N1164A 2N1165 2N1165A 2N1166 2N11T-36 8-32NC-2A 2n2153 2N2152 2N1522 TO41 germanium power transistors TO36 germanium PNP 2N1167 2N2287

    2N1100

    Abstract: transistor t03 germanium transistor pnp 2n277 2N1100 Power Transistor 2N4277 2N4280 2N5440 2N1039 2n2912 2N2555
    Text: TTTUTFE TTTÆWYrSTTJT^ CO TNC i fi4D D | 2 Û 4 fi3 5 2 □□□□141 7 " - 3 3 - off 3 f DIODE Tfldl\l515TQR CQ.,lf\JC. • “ J ~ 2011686-0400 • Telex: 139-365 * O u ts id e NY & NJ area c a ll t o l l f r e e 8005zs*4aai / g e r m a n iu M p n p h ig h p o w e r t r a n s i s t o r s


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    PDF DDDD141 2N58A 2N1073 2N2158 2N5325 2N143/13 2N1073A 2N2158A 2N5435 2N174A 2N1100 transistor t03 germanium transistor pnp 2n277 2N1100 Power Transistor 2N4277 2N4280 2N5440 2N1039 2n2912 2N2555

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    2N2636

    Abstract: 2N4048 2N2152 TO41 TO36 2N2287 2N1162A 2N1163A 2N1164 2N1165
    Text: G E R M A N I U M POWE R D E V I C E S b3E D • 3 T 4 7 37 S 0 0 G D S 6 3 1EG ■ ¿ P D GERMANIUM POWER TRANSISTORS Type Number y cey o Case Type Y CBO 2N1162A 2N1163 2N1163A 2N1164 2N1164A 2N1165 2N1165A 2N1166 2N1166A 2N1167 2N1167A 2N1651 2N1652 2N1653


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    PDF 3T4737S 00GDS63 2N1162A 2N1163 2N1163A 2N1164 2N1164A 2N1165 2N1165A 2N4048 2N2636 2N2152 TO41 TO36 2N2287

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    2N4033

    Abstract: 2N4031 2N4032 pnp for 2n3019 2N3019 2N3107 2N3108 2N4030 2N5020 BOX69477
    Text: 2N4030 ’ .A: through 2N4033 PNP SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES . y - f d . - - •*' • !■r,T«:■ k;-,v c i! '*■ ,-A CASE TO-39 THE 2N4030 THROUGH 2N4033 ARE PUP SILICON PLANAR EPITAXIAL TRANSISTORS FOR AF MEDIUM POWER DRIVERS


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    PDF 2N4030 2N4033 2N4030, 2N4031, 2N4032, 2N3108, 2N5020, 2N4031 2N4032 pnp for 2n3019 2N3019 2N3107 2N3108 2N5020 BOX69477

    2N1100 Power Transistor

    Abstract: DTG-2400 2n4280 germanium transistor pnp 2n277 2N2912 2n58a DTG2400 2N2567 2n1039 2N5435
    Text: TTTUTFE TTTÆWYrSTTJT^ CO TNC i fi4D D | 2 Û 4 fi3 5 2 □□□□141 7 " - 3 3 - off 3 f DIODE Tfldl\l515TQR CQ.,lf\JC. • “ J ~ 2011686-0400 • Telex: 139-365 * O u ts id e NY & NJ area c a ll t o l l f r e e 8005zs*4aai / g e r m a n iu M p n p h ig h p o w e r t r a n s i s t o r s


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    PDF DDDD141 2N58A 2N1073 2N2158 2N5325 2N143/13 2N1073A 2N2158A 2N5435 2N174A 2N1100 Power Transistor DTG-2400 2n4280 germanium transistor pnp 2n277 2N2912 DTG2400 2N2567 2n1039