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Microchip Technology Inc 2N4300 PNP TRANSISTOR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2N4300	Bulk			100	1 - 10 - 100 $10.4701 1000 $10.4701 10000 $10.4701	Buy Now
Avnet Americas	2N4300	Bulk		22 Weeks	100	1 - 10 - 100 $11.1672 1000 $10.02229 10000 $10.02229	Buy Now
Mouser Electronics	2N4300		18			1 $11.28 10 $11.28 100 $10.47 1000 $10.47 10000 $10.47	Buy Now
Newark	2N4300	Bulk			100	1 - 10 - 100 $10.47 1000 $10.07 10000 $10.07	Buy Now
Microchip Technology Inc	2N4300			22 Weeks		1 $11.28 10 $11.28 100 $11.28 1000 $11.28 10000 $11.28	Buy Now

Onlinecomponents.com	2N4300					1 - 10 - 100 $11.04 1000 $11.04 10000 $11.04	Buy Now
NAC	2N4300				31	1 $11.84 10 $11.84 100 $10.73 1000 $9.82 10000 $9.82	Buy Now
Master Electronics	2N4300					1 - 10 - 100 $11.04 1000 $11.04 10000 $11.04	Buy Now
Central Semiconductor Corp 2N4300 Bipolar Transistor Small Signal NPN Amplifier/Switch 1mA 2V 3-Pin TO-39 Through Hole Box - Boxed Product (Development Kits) (Alt: 2N4300)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	2N4300	Box			500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Central Semiconductor Corp 2N4300 PBFREE Transistor GP BJT NPN 80V 3-Pin TO-39 Box - Boxed Product (Development Kits) (Alt: 2N4300 PBFREE)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	2N4300 PBFREE	Box			500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	2N4300 PBFREE					1 - 10 - 100 - 1000 $4.25 10000 $4.25	Get Quote
Central Semiconductor Corp 2N4300 TIN/LEAD Transistor GP BJT NPN 80V 3-Pin TO-39 Box - Boxed Product (Development Kits) (Alt: 2N4300 TIN/LEAD)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	2N4300 TIN/LEAD	Box			500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	2N4300 TIN/LEAD					1 - 10 - 100 - 1000 $4.89 10000 $4.89	Get Quote

2N4300 Datasheets (29)

Part	Manufacturer	Description	Datasheet Type	PDF
2N4300	Central Semiconductor	Leaded Small Signal Transistor General Purpose - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=2 / Hfe=30-120 / fT(Hz)=30M / Pwr(W)=15	Original	PDF
2N4300	Semelab	Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=2 / Hfe=30-120 / fT(Hz)=30M / Pwr(W)=15	Original	PDF
2N4300	Advanced Semiconductor	Silicon Transistor Selection Guide	Scan	PDF
2N4300	API Electronics	Short form transistor data	Short Form	PDF
2N4300	Central Semiconductor	NPN METAL CAN Transistors	Scan	PDF
2N4300	Central Semiconductor	NPN Metal Can Transistors - Switching / General Purpose / Saturated Switch	Scan	PDF
2N4300	General Diode	Transistor Selection Guide	Scan	PDF
2N4300	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF
2N4300	Motorola	Motorola Semiconductor Datasheet Library	Scan	PDF
2N4300	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2N4300	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2N4300	Unknown	Shortform Electronic Component Datasheets	Short Form	PDF
2N4300	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2N4300	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF

2N4300	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
2N4300	Unknown	Vintage Transistor Datasheets	Scan	PDF
2N4300	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2N4300	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2N4300	Unknown	Transistor Replacements	Scan	PDF
2N4300	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF

2N4300 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2n4300 Abstract: No abstract text available Text: 2N4300 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021)	Original	2N4300 O205AD) 19-Jun-02 2n4300	PDF
2N4300 Abstract: No abstract text available Text: 2N4300 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021)	Original	2N4300 O205AD) 1-Aug-02 2N4300	PDF
Untitled Abstract: No abstract text available Text: 2N4300 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021)	Original	2N4300 O205AD) 17-Jul-02	PDF
2N4300 Abstract: No abstract text available Text: 2N4300 Si NPN Power BJT 10.50 Transistors Bipolar Silicon NPN Pow. 1 of 1 Home Part Number: 2N4300 Online Store 2N4300 Diodes Si NPN Po w er BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits	Original	2N4300 com/2n4300 2N4300	PDF
TO111 Abstract: 2N3850 2N3928 2N43 2N4231 TO-111 Text: high-rei power transistors 84 SILICON NPN TRANSISTORS 5 Amp BREAKDOWN VOLTAGE TYPE NUMBER CASE SIZE VeB VCE VEB 2N3850 2N3851 2N3852 2N3853 2N3878 2N3879 2N3928 2N3929 2N3996 2N3997 2N3998 2N3999 2N4231 2N4232 2N4233 2N4300 2N4913 2N4914 2N4915 2N4998 2N5000	Original	2N3850 2N3851 2N3852 2N3853 2N3878 2N3879 2N3928 2N3929 2N3996 2N3997 TO111 2N43 2N4231 TO-111	PDF
SDT5055 Abstract: SDT5001 SDT5052 SDT5505 Datasheet SDT5554 SDT5010 SDT5513 2N2150 2N2151 2N3788 Text: hFE V Device VCEO @ IC A CE (sat) @ IC (A) Type (V) Min/Max Max (V) 2N2150 80 20/60 1.0 1.25 1.0 2N2151 80 40/120 1.0 1.25 1.0 2N3788 325 20/180 0.5 1.00 1.5 2N3917 40 30/120 1.0 1.20 1.0 2N3918 40 100/300 1.0 1.20 1.0 2N4300 80 30/120 1.0 0.50 0.2 2N4862	Original	2N2150 2N2151 2N3788 2N3917 2N3918 2N4300 2N4862 2N4863 2N4864 2N4998 SDT5055 SDT5001 SDT5052 SDT5505 Datasheet SDT5554 SDT5010 SDT5513 2N2150 2N2151 2N3788	PDF
2N4033 Abstract: 2N4358 2N4890 2N4032 2N4036 2N4037 2N4046 2N4047 2N4234 2N4235 Text: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION VCBO (V) VCEO (V) VEBO (V) VCER ICBO ( A) @ VCB hFE (V) @ IC @ VCE VCE(SAT) @ IC fT (mA) (V) (V) (mA) (MHz) Cob (pF) ton (ns) TYP TYP TYP TYP TYP MAX MAX ICEO ICES ICEV ICER	Original	2N4030 2N4031 2N4032 2N4925 2N4926 2N4927 2N4928 2N4929 2N4033 2N4358 2N4890 2N4032 2N4036 2N4037 2N4046 2N4047 2N4234 2N4235	PDF
GSTU4040 Abstract: 2n6547 jantx Text: \ Ic = 2 .0 A M P S DEVICE TYPE 2N4300 2N4863 2N4864 2N5148 ^N S150 VOLTS B^cbo/ BVcev VOLTS ^EBO VOLTS @100°C WATTS Min. Mix 80 120 120 80 80 100 140 140 100 100 8.0 8.0 8.0 6.0 6.0 15.0 4.0 16.0 40.0 4.0 3 0 -1 2 0 5 0 -1 5 0 5 0 -1 5 0 3 0 - 90 7 0 -2 0 0	OCR Scan	2N4300 2N4863 2N4864 2N5148 2N3418 2N3419 2N3420 2N3421 2N3506 2N3507 GSTU4040 2n6547 jantx	PDF
2N4300 Abstract: No abstract text available Text: TYPE 2N4300 N-P-N EPITAXIAL PLANAR SILICON POWER TRANSISTOR • TYPE 2N4300 BULLETIN NO. DL-S 668562, FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS 15 W at 100°C Cose Temperature • Max VtE jat of 0.3 V at 1 A l ( • Typ t enof 130 ns at 1 A lc	OCR Scan	2N4300	PDF
2N4300 Abstract: No abstract text available Text: 0/V E F ^ IP 2N4300 NEW ENGLAND SEMICONDUCTOR NPN EPITAXIAL PLANAR SILICON POWER TRANSISTORS NPN EPITAXIAL PLANAR SILICON POWER TRANSISTOR . for power-amplifier and high-speed-switching applications. • • • • 15 WATT @ 100°C CASE TEMPERATURE MAXIMUM VCE SAT = 0.3 VOLTS @ 1.0 AMP. Ic	OCR Scan	2N4300 2N4300 25UCJ	PDF
2N4300 Abstract: 2N5333 B176 Text: Xöo^5 3 2N4300 2 AMP HIGH SPEED NPN TRANSISTOR 100 VOLTS CASE STYLE W JEDEC TO—5 14830 Valley View Avenue La Mirada, C alifornia 90638 r. U . DOX Oí Í La Mirada, C alifornia 90637 213 921-9660 TW X 910-583-4807 FEATURES • • • • • • • RADIATION TOLERANT	OCR Scan	2N4300 2N5333 2N4300 2N5333 B176	PDF
SF1020 Abstract: 2N5000 2N5330 2n6324 2N3867 2N4300 2N4998 2N5152 2N5154 2N5334 Text: o o NPN TRANSISTORS 2 80 2N4300 2N4998 . 2N5000 SFT4300 2N3867 2N5334 . 2N5335 SFT3507 2N5152 2N5154 2N3996 3 5 150 40 60 80 150 80 ! : O f Darlington 10 25 s m o i6 SFT1018 SF10 2 0 SFT2010 SFT2012 SFT2014 7 7 7 5 5 5 TO-5 T O -1 11 T O -1 11 TO-5 TO-5 TO-39	OCR Scan	2N4300 2N4998 O-111 2N5000 SFT4300 2N3867 2N5334 2N5335 SFT3507 SF1020 2N5330 2n6324 2N5152 2N5154	PDF
2N1720 Abstract: 2n2784 2N5680 2N3058 T-20 2N4033 Text: NPN HIGH CURRENT GENERAL PURPOSE MEDIUM SPEED AMPLIFIERS Maximum Ratings Type NPN PD Ambient mW 2N4237 2N5321 2KL714 2NL716 2N1718 2N1720 2N3418 2N3420 2N4238 2N5320 2N2987 2N2989 2N2991 2N2993 2N3419 2N3421 2N4239 2N4000 2N4300 2NL715 2N1717 2NL719 2ML721	OCR Scan	2n4237 2n5321 2nl714 2nl716 2n1718 2n1720 2n3418 2n3420 2n4238 2n5320 2n2784 2N5680 2N3058 T-20 2N4033	PDF
2N5076 Abstract: 2N5336 Text: 19 SILICON POWER TRANSISTORS CURREI* JT G A IN TYPE NUMBER CASE TYPE V CBO V V EBO I V I V V CEO h FE M IN . I M A X . V V SA TU R A TIO P 0 V O LT A G E S 'c A V CE s V BE(s) V I V 'c A 'b I A 5 AMP SILICON NPN 2N4300 2N4305 2N4307 TO-5 TO-5 TO-5 100 120	OCR Scan		PDF

Jantxv2N5666S Abstract: No abstract text available Text: Microsemi NPN Transistors Part Number 2N1485 2N1486 2N4910 2N4911 2N4912 2N5606 2N5610 2N6352 2N5612 2N6353 2N3018 2N4300 2N5662 JAN2N5662 JANTX2N5662 JANTXV2N5662 , 2N5663 JAN2N5663 JANTX2N5663 JANTXV2N5663 2N5666 2N5666S JAN2N5666 JAN2N5666S JANS2NS666 JANS2NS666S	OCR Scan	T0-220 O-22Q NPN-11 Jantxv2N5666S	PDF
IC HXJ 2038 Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: mÎ æ J E L E C T R O N I C S , IN C. / -11 COLLECTOR CURRENT = 5 AMPS NPN TYPES— Continued Device No 2N3751 Case TO1 1 1 /1 TO- 2N3752 2N3850 TO- 2N3851 2N3852 VcBO VCEO bus Volts Volts 80 60 V e BO Volts ’E Min hi Max 8 100 300 VCE 5 Vb e (sat) 1	OCR Scan	2N3751 2N3752 2N3850 2N3851 2N3852 O-111 O-114	PDF
Untitled Abstract: No abstract text available Text: CENTRAL SE MI CO NDUCT OR 1989963 CENTRAL SEMICONDUCTOR ~bî DE I n * m b 3 ODDDai? 3 '_ 61C 00217 T'lZ-ö! NPN METAL CAN - SWITCHING AND GENERAL PURPOSE Cont'd. Vcb V CE V EB hFE at •c VCE V V V min max mA V V 2N3302 2N3326 2N3388 2N3418 2N3419	OCR Scan	2N3302 2N3326 2N3388 2N3418 2N3419 2N3501 2N3665 2N3666 2N3678 2N3700	PDF
Untitled Abstract: No abstract text available Text: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION v CBO (V) h =E VCEO v EBO 'CBO v CBO (V) (HA) (V) @ lc « VCE VCE(SA T) @ >C (mA) 00 (V) (V) (mA) ''C EO VCER T (MHz) Cob TYP NF (PF) •on (ns) •off (ns) (dB) TYP TYP TYP •TYP	OCR Scan	2N4030 2N4031 2N4032 2N4926 2N4927 2N4928 2N4929	PDF
2N22A Abstract: 2N4271 2N3947 2N3326 2N3666 Text: CENTRAL SE MI CO NDUCT OR 1989963 CENTRAL SEMICONDUCTOR ~bî DE I n * m b 3 ODDDai? 3 '_ 61C 00217 T 'lZ - ö ! NPN METAL CAN - SWITCHING AND GENERAL PURPOSE Cont'd. V cb VCE V EB hFE at •c VCE V V V min max mA V V 2N3302 2N3326 2N3388 2N3418 2N3419	OCR Scan	2n3302 to-18 2n3326 2n3388 2n3418 2n3419 n3420 2n3421 CBR30 0000S23 2N22A 2N4271 2N3947 2N3666	PDF
2N4250 Abstract: t0106 2N4142 2N4249 2N4411 2N3284 2N4248 2N4355 2N4358 2N4260 Text: 0258354 ADVANCED SEMIC C IS l ^ o k l " Jcnj,v',t a d v a n ce d Ü D Ë TRANSISTORS 1 Po @ T c = 2 5 ° C DEVICE TYPE NO. 2N4142 2N4143 2M4150 2N4207 2N4208 2N4209 2N4210 2N4227 2N4228 2N4231 2N4232 2N4233 2N4234 2N4235 2N4236 2N4237 2N4238 2N4239 2N4248	OCR Scan	2N4142 2N4143 2N4150 2N4207 T0106 2N4208 2N4209 2N4210 2N4227 2N4250 2N4249 2N4411 2N3284 2N4248 2N4355 2N4358 2N4260	PDF
BF357 Abstract: BF195 BF594 BF197 BF194 BF194 equivalent BF597 2N4996 BF195 equivalent BC516 equivalent Text: Silect High Frequency Transistors TT MHz Sj o < Maximum Ratings Device Type hFE Case outline B V PTOT Ic VCE in brackets CBO ic V V mA mW min. max. mA V 1 10 BF594 (9) 30 20 30 250 65 220 Case Outlines BF595 (9) 30 20 30 250 35 BF597 (9) 40 25 30 360 38	OCR Scan	BF594 BF594, BF194 BF595 BF195 BF597 BF197 2N4996 O-111 BF357 BF195 BF594 BF197 BF194 BF194 equivalent BF597 2N4996 BF195 equivalent BC516 equivalent	PDF
n4300 Abstract: 32Vj 2N1719 2N4000 2N696 TEXAS INSTRUMENTS transistor t05 XB412 2N1507 2N3419 2N1711 Text: Case T ype No. C o n s tru c tio n see note 1 Silicon Transistors M a xim u m R a tin g s a t2 5 °C am b. S P E C IA L C h a ra c te ris tic s FE A T U R E S h h FE V CB V V CE V v EB V •c A 15 2 30 15 2 M in. P to t W mA 0-2 10 50 20 0-2 10 50 20 Max.	OCR Scan	TIXS12 TIXS13 1200t 2N696 2N697 2N698 2N1507 2N1613 2N1711 2N3418 n4300 32Vj 2N1719 2N4000 2N696 TEXAS INSTRUMENTS transistor t05 XB412 2N3419	PDF
JAN2N3996 Abstract: 2N4307 ISM22 2n3183 Text: A P 'e l e c t r o n COLLECTOR CURRENT = 5 AMPS NPN TYPES • VCEO sus V olts VEBO V olts hFE Min Max ■ Ft Vc e ic V c e (sat) Vb e (sat) @ Ic @ IB Mt 80 8 20 60 5 1 1 .2 5 2 1 .1 30 80 8 40 120 5 1 1. 25 2 1 .1 30 60 80 80 80 80 8 8 5 5 5 40 40 100 100	OCR Scan		PDF

2N4300 Search Results

2N4300 Price and Stock

Microchip Technology Inc 2N4300

Central Semiconductor Corp 2N4300

Central Semiconductor Corp 2N4300 PBFREE

Central Semiconductor Corp 2N4300 TIN/LEAD

2N4300 Datasheets (29)

2N4300 Datasheets Context Search

2n4300

2N4300

Untitled

2N4300

TO111

SDT5055

2N4033

GSTU4040

2N4300

2N4300

2N4300

SF1020

2N1720

2N5076

Jantxv2N5666S

IC HXJ 2038

Untitled

Untitled

Untitled

2N22A

2N4250

BF357

n4300

JAN2N3996