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    2N5172 TRANSISTOR Search Results

    2N5172 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2N5172 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N5172 2N5172 General purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2005-07-26 Power dissipation Verlustleistung 18 9 16 E CB 2 x 2.54 Dimensions / Maße [mm] 625 mW Plastic case Kunststoffgehäuse


    Original     		PDF 2N5172 UL94V-0

    2N5172

    Abstract: No abstract text available
    Text: 2N5172 NPN 2N6076 PNP COMPLEMENTARY SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5172 and 2N6076 are complementary silicon small signal transistors designed for general purpose applications. MARKING: FULL PART NUMBER


    Original     		PDF 2N5172 2N6076

    2n5172

    Abstract: No abstract text available
    Text: 2N5172 2N5172 General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2006-05-15 Power dissipation Verlustleistung 18 9 16 E BC 625 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx. – Gewicht ca.


    Original     		PDF 2N5172 2N5172 UL94V-0

    Untitled

    Abstract: No abstract text available
    Text: 2N5172 2N5172 B C TO-92 E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol


    Original     		PDF 2N5172 PN100

    2N5172

    Abstract: 10D3
    Text: 2N5172 2N5172 General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2006-05-15 Power dissipation Verlustleistung 18 9 16 E BC 625 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx. – Gewicht ca.


    Original     		PDF 2N5172 UL94V-0 2N5172 10D3

    2N5172

    Abstract: No abstract text available
    Text: 2N5172 2N5172 TRANSISTOR NPN TO—92 FEATURES Power dissipation 1. EMITTER 2. COLLECTOR PCM : 0.625 W (Tamb=25℃) 3. BASE Collector current ICM : 0.5 A Collector-base voltage V(BR)CBO : 25 V Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55℃ to +150℃


    Original     		PDF 2N5172 O--92 2N5172

    2N5172

    Abstract: CBVK741B019 F63TNR PN100 PN2222N 2n5172 transistor
    Text: 2N5172 2N5172 B C TO-92 E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol


    Original     		PDF 2N5172 PN100 2N5172 CBVK741B019 F63TNR PN2222N 2n5172 transistor

    2SC1815 NPN SOT-23

    Abstract: ss8050 sot-23 S8050 npn BC337 2N2907 SOT-23 s9018 to-92 S9014 SOT-23 2SC1008 noise S9014 To39 BC212C
    Text: MCC Small Signal Transistors Small Signal General Purpose Transistors Part No. and Polarity NPN PNP 2N3416 2N3904 2N3906 2N4400 2N4402 2N4401 2N4403 2N5172 2N6727 2SA562 2SA673 2SA673A 2SA733 2SA844 2SA950 2SA1015 2SA1300 2SB892 2SC380TM 2SC945 2SC1008 2SC1213


    Original     		PDF 2N3416 2N3904 2N3906 2N4400 2N4402 2N4401 2N4403 2N5172 2N6727 2SA562 2SC1815 NPN SOT-23 ss8050 sot-23 S8050 npn BC337 2N2907 SOT-23 s9018 to-92 S9014 SOT-23 2SC1008 noise S9014 To39 BC212C

    Untitled

    Abstract: No abstract text available
    Text: Small Signal General Purpose Transistors Part No. BF370 2N2712 2N2714 BC368 BF254 BF494 BF495 BF496 BF959 2N2924 2N3392 2N3415 2N5172 BC338-16 BC338-25 MPS4124 MPS6514 MPS6515 MPS6560 SS8050 SS8050D 2N3704 2N3705 BC548A BC548B BC548C MPS2222 MPS4123 PN3643


    Original     		PDF BF370 2N2712 2N2714 BC368 BF254 BF494 BF495 BF496 BF959 2N2924

    transistor 2n5172

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR AMPLIFIER TRANSISTOR 2N5172 TO-92 Plastic Package ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION


    Original     		PDF 2N5172 C-120 2N5172Rev230701 transistor 2n5172

    2N5172

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N5172 TRANSISTOR NPN TO—92 FEATURES Power dissipation 1. EMITTER 2. COLLECTOR PCM : 0.625 W (Tamb=25℃) 3. BASE Collector current A ICM : 0.5 Collector-base voltage


    Original     		PDF 2N5172 O--92 2N5172

    2N5172

    Abstract: No abstract text available
    Text: 2N5172 0.5 A, 25 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  TO-92 General Purpose Amplifier Transistor G H Emitter Collector Base J A D Collector


    Original     		PDF 2N5172 29-Dec-2010 2N5172

    2n5172 transistor

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N5172 TO-92 Plastic Package E CB ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL VALUE UNITS


    Original     		PDF 2N5172 C-120 2N5172Rev 081101E 2n5172 transistor

    2N5172

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N5172 TO-92 Plastic Package E CB ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL VALUE UNITS Collector Emitter Voltage


    Original     		PDF ISO/TS16949 2N5172 C-120 2N5172Rev 081101E 2N5172

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2N5172 TRANSISTOR NPN 1. EMITTER FEATURES z General Purpose Amplifier Transistor 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol


    Original     		PDF 2N5172

    Untitled

    Abstract: No abstract text available
    Text: Bipolar Transistors Small Signal General Purpose Transistors Part No. BF370 2N2712 2N2714 BC368 BF254 BF494 BF495 BF496 BF959 2N2924 2N3392 2N3415 2N5172 BC338-16 BC338-25 MPS4124 MPS6514 MPS6515 MPS6560 SS8050 SS8050D 2N3704 2N3705 BC548A BC548B BC548C MPS2222


    Original     		PDF BF370 2N2712 2N2714 BC368 BF254 BF494 BF495 BF496 BF959 2N2924

    2n5172

    Abstract: No abstract text available
    Text: 2N5172 NPN SMALL SIGNAL TRANSISTOR POWER SEMICONDUCTOR Features • • High Current Gain 600 mW Power Dissipation E A TO-92 B Dim Min Max A 4.32 4.83 Mechanical Data • • • • • C Case: TO-92, Plastic Leads: Solderable per MIL-STD-202, Method 208


    Original     		PDF 2N5172 MIL-STD-202, DS21602 2n5172

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N5172 TRANSISTOR（ NPN ） TO—92 FEATURES Power dissipation PCM : 0.625 W（Tamb=25℃） Collector current ICM : 0.5 A Collector-base voltage V BR CBO : 25 V Operating and storage junction temperature range


    Original     		PDF 2N5172 270TYP 050TYP

    "to-98" package

    Abstract: MPS5172 2N5172 2N6076 PN5172 2n5172 to-92 TO-98 RCA 2N
    Text: G E SOLI» STATE DE | 3075DÛ1 0 0 1 7 C]3T 1 | r* s ' -Signal Transistors 2N5172, MPS5172, PN5172,2N6076 Silicon Transistors TO-92 TO-98


    OCR Scan     		PDF 2N5172, MPS5172, PN5172, 2N6076 PN5172 2N6076 PN5172) O-910 "to-98" package MPS5172 2N5172 2n5172 to-92 TO-98 RCA 2N

    2N5172

    Abstract: DS21602
    Text: 2N5172 NPN SMALL SIGNAL TRANSISTOR Features High Current Gain 600 mW Power Dissipation KM M-H TO-92 Dim Min Max A 4.32 4.83 Mechanical Data Case: TO-92, Plastic Leads: Solderable per MIL-STD-202, Method 208 Pin Connections: See Diagram Marking: Type Number


    OCR Scan     		PDF 2N5172 MIL-STD-202, DS21602 2N5172

    Untitled

    Abstract: No abstract text available
    Text: SynSEMi T O -92 Plastic Encapsulate Transistors 5YN5EMI SEMICONDUCTOR 2N5172 TRANSISTOR NPN TO — 92 FEATURES Power dissipation 1. EMITTER Po, : 0.625 Collector current W Icm A • 0.5 oo^ (Tamb=25 *C) 2. COLLECTOR 3. BASE Collector base voltage V (br x b o : 25 V


    OCR Scan     		PDF 2N5172 270TYP 050TYP

    marking EB 202 transistor

    Abstract: No abstract text available
    Text: 2N5172 VISHAY NPN SMALL SIGNAL TRANSISTOR /uTE M ir I POWER SEMICONDUCTOR J Features High Current Gain 600 mW Power Dissipation TO-92 Dim Min Max A 4.32 4.83 Mechanical Data Case: TO-92, Plastic Leads: Solderable per MIL-STD-202, Method 208 Pin Connections: See Diagram


    OCR Scan     		PDF 2N5172 MIL-STD-202, 10pxA DS21602 marking EB 202 transistor

    2N5172

    Abstract: DS21
    Text: 2N5172 visH A Y NPN SMALL SIGNAL TRANSISTOR /l i t e w i i / POWERSEMICONDUCTOR I Features • • High Current Gain 600 mW Power Dissipation TO-92 Dim Min Max A 4.32 4.83 Mechanical Data Case: TO-92, Plastic Leads: Solderable per MIL-STD-202, Method 208


    OCR Scan     		PDF 2N5172 MIL-STD-202, 2N5172 DS21

    "to-98" package

    Abstract: 2N5172
    Text: G E SOLI» STATE DE j3fl7SDùl 0 0 1 7 c]3cì 1 | T~- "¿sr Signal Transistors 2N5172, MPS5172, PN5172, 2N6076 Silicon Transistors TO-92 TO-98 The GE/RCA 2N, MPS, PN5172 are NPN and 2N6076 is a


    OCR Scan     		PDF 2N5172, MPS5172, PN5172, 2N6076 PN5172 obser10V, "to-98" package 2N5172