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    2N5531 Search Results

    2N5531 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N5531 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N5531 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5531 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N5531 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5531 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5531 Solitron Devices 5 Amp NPN Silicon Power Transistors in a TO-5 package Scan PDF

    2N5531 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N5531

    Abstract: j3305 2N552 Solitron Devices solitron transistors 2N5527 SOLITRON silicon power transistors TR-33 tr33"05
    Text: — SOLITRON DEVICES INC bb DE | û3bflt,D2 ODDl^D? 2 ~ f 1_ _ 3 ?, ü ^ RADIA TION RESISTANT NPN SILICON POWER TRANSISTORS 2N5527 2N5531 NPN SILICON POWER TRANSISTORS RADIATION RESISTAN T 5 AMPERES FEATURES MEDIUM POWER RADIATION EXPOSURE LEVEL TO 5 x 1014 nvt


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    2N5527 2N5531 2N5527 2N552? 2N5531 j3305 2N552 Solitron Devices solitron transistors SOLITRON silicon power transistors TR-33 tr33"05 PDF

    2N5532

    Abstract: 2N5076 2N5529 SDR2710 2n5430 2N5530 2N5527 2N5528 2N5531 2N5533
    Text: 9 RADIATION RESISTANT TRANSISTORS CU R R E N T G A IN TYPE NUM BER CASE TYPE V CEO V V CBO V V EBO V hFE M IN . | M A X . CE V S A T U R A T IO N VO LTAG ES 'c A V CE s V V BE(s) V <8> 'c A 5 AMP RADIATION Mi’N 2N5527 2N5531 SDR2710 TO-5 TO-5 MT-27 60 90


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    2N5527 2N5531 SDR2710 MT-27 SDR2712 2N5528 2N5529 2N5530 O-61-1 2N5532 2N5076 2n5430 2N5533 PDF

    2N5530

    Abstract: 2N5531 2N5532
    Text: 9 RADIATION RESISTANT TRANSISTORS CU R R E N T G A IN TYPE NUMBER CASE TYPE V CEO V V CBO V V EBO V hFE M IN . | M A X . CE V S A T U R A T IO N VO LTAGES 'c A V CE s V V BE(s) V <8> 'c A 5 AMP RADIATION Mi’N 2N5527 2N5531 SDR2710 TO-5 TO-5 MT-27 60 90


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    PDF

    2N5531

    Abstract: SOLITRON 10MHZ 2N5527 BR100A BR101A SOLITRON DEVICES
    Text: SOLITRON DEVICES INC ' T^ 3 S~o5' DeTJ fl3bflb02 DDDnst. b _ RADIATION RESISTANT NPN SILICON POWER TRANSISTORS BR100A BR101A NPN SILICON POWER TRANSISTORS RADIATION RESISTANT 5 AMPERES FEATURES MEDIUM POWER RADIATION EXPOSURE L E V E L TO 3 x10 l4 n /C m 2


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    fl3bflb02 BR100A BR101A 3x10l4n/Cm2 BR100A 2N5531 SOLITRON 10MHZ 2N5527 BR101A SOLITRON DEVICES PDF

    Untitled

    Abstract: No abstract text available
    Text: J UJ nitron sem iconductors Semitronics Corp. S 2 m www.DataSheet.in silicon transistors UHF/VHF power transistors 7~~3 7 ~ 0 / NPN type « Rttad Breakdown V o ttaiM V V V CB CB EB V CE 65 6b :^ N 3 e 3 2 ] 65 : 2N3733 6b 40 40 40 40 4.0 4.0 4.0 4.0 28 28


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    2N3733 2N3866 N3S24 2N3926 2N3927 T0-60 MT-72j PDF

    2ND55

    Abstract: 2N828 2n4933 *423 pnp 2N2482 2n711 2N3733 2N3866 2N401 MT72j
    Text: discrete devices J 1311IETUI1 sem iconductors Semitronics Corp. silicon transistors UHF/VHF power transistors J 7 - Of NPN type « Rated Breakdown VottaiM V V V CB CB EB VCE 65 6b :^N3e32] 65 : 2N3733 6b 40 40 40 40 4.0 4.0 4.0 4.0 28 28 28 28 : 2N3866 f ?N3S24


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    2H3375 S2N35 2N3733 2N3866 JN3924 2N392B 2N401Ã T0-60 JN4040 2N4041 2ND55 2N828 2n4933 *423 pnp 2N2482 2n711 2N401 MT72j PDF

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF

    9300

    Abstract: 2N5561 2N5330 2N3729 2N4025 2n6561 9301
    Text: SEMICOA IflE D BVce0 Range lc Max. BVeb0 Range • ûlBMbia OGOG1SE M ■ Low Current HFE Mid-Range HFE High Current HFE To V @lc mA Min. @ lc mA Min. 4 6 0.1 30 10 40 300 40 4 6 0.1 20 2 20 140 20 40 3 6 .01 15 2 30 250 20 20 2 4,3 20 60 3 7 .10 20 2 30


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    2N5004 2N5005 2N5008 2N5009 2N5038 2N5039 2N5077 2N5085 2N5149 2N5150 9300 2N5561 2N5330 2N3729 2N4025 2n6561 9301 PDF

    2N510B

    Abstract: 1HW NPN 2NS71 2N3927 2NB642
    Text: discrete devices J 1311IETUI1 sem iconductors Semitronics Corp. silicon transistors UHF/VHF power transistors J 7 - O f NPN type « Rated Breakdown V o ttaiM V V V CB CB EB V CE 65 6b :^ N 3 e 3 2 ] 65 : 2N3733 6b 40 40 40 40 4.0 4.0 4.0 4.0 28 28 28 28 : 2N3866


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    1311IETUI1 2N3733 2N3866 N3S24 2N3926 2N3927 2N962 2N985 2N2190 2N510B 1HW NPN 2NS71 2N3927 2NB642 PDF