2N5551B
Abstract: tr 5551 2N5551 SOT23 2n5551 BR 5551 2N5551 circuit 2N5551BU BR N 5551
Text: 2N5551- MMBT5551 tm NPN General Purpose Amplifier Features • This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Suffix “-C” means Center Collector in 2N5551 1. Emitter 2. Collector 3. Base • Suffix “-Y” means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V)
|
Original
|
PDF
|
2N5551-
MMBT5551
MMBT5551
2N5551
OT-23
2N5551
2N5551B
tr 5551
2N5551 SOT23
BR 5551
2N5551 circuit
2N5551BU
BR N 5551
|
Untitled
Abstract: No abstract text available
Text: 2N5551 / MMBT5551 NPN General Purpose Amplifier Features • This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Suffix “-C” means Center Collector in 2N5551 1. Emitter 2. Collector 3. Base • Suffix “-Y” means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V)
|
Original
|
PDF
|
2N5551
MMBT5551
2N5551
OT-23
|
2N5551 circuit
Abstract: 2N5550 2n5551
Text: ON Semiconductort 2N5550 2N5551* Amplifier Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit Collector–Emitter Voltage VCEO 140 160 Vdc Collector–Base Voltage VCBO 160 180 Vdc Emitter–Base Voltage
|
Original
|
PDF
|
2N5550
2N5551*
2N5551
226AA)
Unit10
2N5551 circuit
|
TRANSISTOR 2N5550
Abstract: 2n5551 2N5551 DATA C2N5550 2N5400 2N5401 2N5550 SC-43A
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5550; 2N5551 NPN high-voltage transistors Product specification Supersedes data of 1999 Apr 23 2004 Oct 28 Philips Semiconductors Product specification NPN high-voltage transistors 2N5550; 2N5551 FEATURES
|
Original
|
PDF
|
M3D186
2N5550;
2N5551
2N5400
2N5401.
MAM279
SCA76
R75/04/pp7
TRANSISTOR 2N5550
2n5551
2N5551 DATA
C2N5550
2N5401
2N5550
SC-43A
|
2N5551G
Abstract: 2N5551 2N5550G C2N5550 2N55551ZL1 2N5550RLRPG 2N5551RL1G 2N5551RLRAG 2N5551RLRPG 1N914
Text: 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector − Emitter Voltage Value VCEO 2N5550 2N5551 Collector − Base Voltage Vdc 140
|
Original
|
PDF
|
2N5550,
2N5551
2N5550
2N5550/D
2N5551G
2N5551
2N5550G
C2N5550
2N55551ZL1
2N5550RLRPG
2N5551RL1G
2N5551RLRAG
2N5551RLRPG
1N914
|
2N5551
Abstract: 2N55551 2N5551 circuit ALL 2N5551
Text: 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • Pb−Free Package is Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Collector − Emitter Voltage VCEO 140 160 Vdc Collector − Base Voltage
|
Original
|
PDF
|
2N5550,
2N5551
2N5550
2N5551
2N5550/D
2N55551
2N5551 circuit
ALL 2N5551
|
2N5551 fairchild
Abstract: 2N5551 2N5551 SOT23 2N5551 circuit 2N5551 SOT-23 MMBT5551 MMBT5551 3s sot23 marking 3S marking 3s SM 3197
Text: 2N5551 / MMBT5551 NPN General Purpose Amplifier Features • This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Suffix “-C” means Center Collector in 2N5551 1. Emitter 2. Collector 3. Base • Suffix “-Y” means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V)
|
Original
|
PDF
|
2N5551
MMBT5551
2N5551
OT-23
2N5551 fairchild
2N5551 SOT23
2N5551 circuit
2N5551 SOT-23
MMBT5551
MMBT5551 3s
sot23 marking 3S
marking 3s
SM 3197
|
2N5551 SOT23
Abstract: 2N5551 circuit 2N5551 MMBT5551 2N5551 fairchild
Text: 2N5551- MMBT5551 tm NPN General Purpose Amplifier Features • This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Suffix “-C” means Center Collector in 2N5551 1. Emitter 2. Collector 3. Base • Suffix “-Y” means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V)
|
Original
|
PDF
|
2N5551-
MMBT5551
2N5551
OT-23
MMBT5551
2N5551 SOT23
2N5551 circuit
2N5551
2N5551 fairchild
|
2N5551 diodes inc
Abstract: 2N5551 circuit diodes inc 2N5551 2N5550 2N5550 motorola 1N914 2N5551 2N5551 TO92 2N5551 motorola
Text: MOTOROLA Order this document by 2N5550/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5550 2N5551* NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit Collector – Emitter Voltage
|
Original
|
PDF
|
2N5550/D
2N5550
2N5551*
2N5550
2N5551
2N5550/D*
2N5551 diodes inc
2N5551 circuit
diodes inc 2N5551
2N5550 motorola
1N914
2N5551
2N5551 TO92
2N5551 motorola
|
2N5551 circuit
Abstract: transistor equivalent 2n5551 2N5551 2N555 2N5550G 1N914 2N5550 2N5550RLRA 2N5550RLRAG 2N5550RLRP
Text: 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector − Emitter Voltage Value Unit VCEO 2N5550 2N5551 Collector − Base Voltage
|
Original
|
PDF
|
2N5550,
2N5551
2N5550
2N5550/D
2N5551 circuit
transistor equivalent 2n5551
2N5551
2N555
2N5550G
1N914
2N5550
2N5550RLRA
2N5550RLRAG
2N5550RLRP
|
2n5551
Abstract: 2N55551 2N5551 circuit 2n5550
Text: 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* • Device Marking: Device Type, e.g., 2N5550, Date Code http://onsemi.com COLLECTOR 3 2 BASE MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit
|
Original
|
PDF
|
2N5550,
2N5551
2N5550
2N5551
2N55551
2N5551 circuit
|
diodes inc 2N5551
Abstract: 2N555 2N5551 hz 9102 2N5400 2N5401 2N5550 BP317 C2N5550
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5550; 2N5551 NPN high-voltage transistors Product specification Supersedes data of 1997 Apr 09 1999 Apr 23 Philips Semiconductors Product specification NPN high-voltage transistors 2N5550; 2N5551 PINNING
|
Original
|
PDF
|
M3D186
2N5550;
2N5551
2N5400
2N5401.
MAM279
SCA63
115002/00/03/pp8
diodes inc 2N5551
2N555
2N5551
hz 9102
2N5401
2N5550
BP317
C2N5550
|
2N5551 circuit
Abstract: 2N5550 2N5551 2N555 1N914
Text: ON Semiconductort 2N5550 2N5551* Amplifier Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit Collector–Emitter Voltage VCEO 140 160 Vdc Collector–Base Voltage VCBO 160 180 Vdc Emitter–Base Voltage
|
Original
|
PDF
|
2N5550
2N5551*
2N5551
226AA)
r14525
2N5550/D
2N5551 circuit
2N5550
2N5551
2N555
1N914
|
2N5551
Abstract: BF242 CBVK741B019 F63TNR MMBT5551 PN2222N
Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
|
Original
|
PDF
|
2N5551
MMBT5551
2N5551
OT-23
BF242
CBVK741B019
F63TNR
MMBT5551
PN2222N
|
|
|
2N5551
Abstract: No abstract text available
Text: 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector − Emitter Voltage Value VCEO 2N5550 2N5551 Collector − Base Voltage Vdc 140
|
Original
|
PDF
|
2N5550,
2N5551
2N5550
2N5550/D
2N5551
|
2N5551
Abstract: CBVK741B019 F63TNR MMBT5551 PN2222N 2N5551 SOT-23 BF242 CJE SOT-23
Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
|
Original
|
PDF
|
2N5551
MMBT5551
2N5551
OT-23
CBVK741B019
F63TNR
MMBT5551
PN2222N
2N5551 SOT-23
BF242
CJE SOT-23
|
2N5551
Abstract: 2N5551 circuit motorola 1N914 diode datasheet 1N914 2N5550 2N5551 diodes inc 2N5551 motorola
Text: MOTOROLA Order this document by 2N5550/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5550 2N5551* NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit Collector – Emitter Voltage
|
Original
|
PDF
|
2N5550/D
2N5550
2N5551*
2N5550
2N5551
2N5550/D*
2N5551
2N5551 circuit
motorola 1N914 diode datasheet
1N914
2N5551 diodes inc
2N5551 motorola
|
2N5551
Abstract: 2N5550 2N5551 circuit TRANSISTORE 10D3 2N5400 2N5401
Text: 2N5550 / 2N5551 2N5550 / 2N5551 General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2006-06-17 Power dissipation Verlustleistung 18 9 16 CBE 2 x 2.54 Dimensions - Maße [mm] 625 mW Plastic case
|
Original
|
PDF
|
2N5550
2N5551
UL94V-0
2N5550
2N5400
2N5551
2N5551 circuit
TRANSISTORE
10D3
2N5401
|
2N5551
Abstract: 2N5550 2N5550G 2N55551 2N5551G 2N55551ZL1G 2N5551 TO92 2N5550RLRPG 2N5551RL1G 2N5551RLRAG
Text: 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • These are Pb−Free Devices* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector − Emitter Voltage Value VCEO Vdc 140 160 2N5550 2N5551 Collector − Base Voltage VCBO Vdc VEBO
|
Original
|
PDF
|
2N5550,
2N5551
2N5550
2N5551
2N5550
2N5550G
2N55551
2N5551G
2N55551ZL1G
2N5551 TO92
2N5550RLRPG
2N5551RL1G
2N5551RLRAG
|
transistor equivalent 2n5551
Abstract: 2N5551 equivalent transistor 2n5551 equivalent 2n2222 2n5401 2n5551 2N5551 148 BC237 2n3819 equivalent ic 2N5551 motorola
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5550 2N5551* NPN Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating Symbol 2N5550 2N5551 Unit Collector – Emitter Voltage VCEO 140 160 Vdc Collector – Base Voltage
|
Original
|
PDF
|
2N5550
2N5551*
2N5551
226AA)
Resistanc218A
MSC1621T1
MSC2404
MSD1819A
MV1620
transistor equivalent 2n5551
2N5551 equivalent
transistor 2n5551 equivalent
2n2222 2n5401 2n5551
2N5551 148
BC237
2n3819 equivalent ic
2N5551 motorola
|
2N555
Abstract: 5401 transistor 2N 5551 2N5400 5551 555-1 transistor 2N5401 1000C 2N5401 2N5550
Text: 2N5400 2N5550 2N 5401 2N5551 COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS CASE TO-92A THE 2N5400, 2N5401 PNP AND 2N5550, 2N5551 (NPN) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS INTENDED FOR GENERAL PURPOSE HIGH VOLTAGE AMPLIFIER AND SWITCHING APPLICATIONS.
|
OCR Scan
|
PDF
|
2N5400
2N5401
2N5550
2N5551
2N5400,
2N5401
2N5550,
O-92A
2N5400
2N555
5401
transistor 2N 5551
5551
555-1
transistor 2N5401
1000C
|
Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS 2N5550; 2N5551 NPN high-voltage transistors 1999 Apr 23 Product specification Supersedes data of 1997 Apr 09 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN high-voltage transistors 2N5550; 2N5551
|
OCR Scan
|
PDF
|
2N5550;
2N5551
115002/00/03/pp8
|
2N5550 EBC
Abstract: 2N5401 2N5400 5551 2N5550 T092A T0-92A N5400
Text: 2N5401 2N5551 2N 5550 COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS i CASE TO-92A THE 2N5400, 2N5401 PNP AND 2N5550, 2N5551 (NPN) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS INTENDED FOR GENERAL PURPOSE HIGH VOLTAGE AMPLIFIER AND SWITCHING APPLICATIONS.
|
OCR Scan
|
PDF
|
2n5400,
2n5401
2n5550,
2n5551
T0-92A
2n5400
2n555q
2n5551
600mA
2N5550 EBC
2N5401
2N5400
5551
2N5550
T092A
N5400
|
Untitled
Abstract: No abstract text available
Text: 2N5400 2N5550 2N 5401 2N5551 COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS 1 CASE TO-92A THE 2N5400, 2N5401 PNP AND 2N5550, 2N5551 (NPN) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS INTENDED FOR GENERAL PURPOSE HIGH VOLTAGE AMPLIFIER AND SWITCHING APPLICATIONS.
|
OCR Scan
|
PDF
|
2N5400
2N5550
2N5551
O-92A
2N5400,
2N5401
2N5550,
|