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    2N5551 TRANSISTOR Search Results

    2N5551 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
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    2N5551 TRANSISTOR Price and Stock

    onsemi 2N5551

    Trans GP BJT NPN 160V 0.6A 3-Pin TO-92 Bulk
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 2N5551 13,243
    • 1 -
    • 10 -
    • 100 $1.49
    • 1000 $1.08
    • 10000 $1.08
    		Buy Now

    Semiconductors 2N5551

    Bipolar (BJT) Transistor NPN 160 V 600 mA 100MHz 625 mW Through Hole TO-92-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 2N5551 96
    • 1 $2.19
    • 10 $2.19
    • 100 $0.644
    • 1000 $0.644
    • 10000 $0.644
    		Buy Now

    Taitron Components Inc 2N5551

    Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 2N5551 76
    • 1 $0.0219
    • 10 $0.0219
    • 100 $0.0219
    • 1000 $0.0199
    • 10000 $0.0171
    		Buy Now

    Diotec Semiconductor AG 2N5551

    Bipolar Transistor - TO-92 - 160V - 600mA - NPN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 2N5551
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.0198
    		Buy Now

    2N5551 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N5551 circuit

    Abstract: 2N5550 2n5551
    Text: ON Semiconductort 2N5550 2N5551* Amplifier Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit Collector–Emitter Voltage VCEO 140 160 Vdc Collector–Base Voltage VCBO 160 180 Vdc Emitter–Base Voltage


    Original     		2N5550 2N5551* 2N5551 226AA) Unit10 2N5551 circuit PDF

    TRANSISTOR 2N5550

    Abstract: 2n5551 2N5551 DATA C2N5550 2N5400 2N5401 2N5550 SC-43A
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5550; 2N5551 NPN high-voltage transistors Product specification Supersedes data of 1999 Apr 23 2004 Oct 28 Philips Semiconductors Product specification NPN high-voltage transistors 2N5550; 2N5551 FEATURES


    Original     		M3D186 2N5550; 2N5551 2N5400 2N5401. MAM279 SCA76 R75/04/pp7 TRANSISTOR 2N5550 2n5551 2N5551 DATA C2N5550 2N5401 2N5550 SC-43A PDF

    2N5551G

    Abstract: 2N5551 2N5550G C2N5550 2N55551ZL1 2N5550RLRPG 2N5551RL1G 2N5551RLRAG 2N5551RLRPG 1N914
    Text: 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector − Emitter Voltage Value VCEO 2N5550 2N5551 Collector − Base Voltage Vdc 140


    Original     		2N5550, 2N5551 2N5550 2N5550/D 2N5551G 2N5551 2N5550G C2N5550 2N55551ZL1 2N5550RLRPG 2N5551RL1G 2N5551RLRAG 2N5551RLRPG 1N914 PDF

    2N5551

    Abstract: 2N55551 2N5551 circuit ALL 2N5551
    Text: 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • Pb−Free Package is Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Collector − Emitter Voltage VCEO 140 160 Vdc Collector − Base Voltage


    Original     		2N5550, 2N5551 2N5550 2N5551 2N5550/D 2N55551 2N5551 circuit ALL 2N5551 PDF

    2N5551 diodes inc

    Abstract: 2N5551 circuit diodes inc 2N5551 2N5550 2N5550 motorola 1N914 2N5551 2N5551 TO92 2N5551 motorola
    Text: MOTOROLA Order this document by 2N5550/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5550 2N5551* NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit Collector – Emitter Voltage


    Original     		2N5550/D 2N5550 2N5551* 2N5550 2N5551 2N5550/D* 2N5551 diodes inc 2N5551 circuit diodes inc 2N5551 2N5550 motorola 1N914 2N5551 2N5551 TO92 2N5551 motorola PDF

    2N5551 circuit

    Abstract: transistor equivalent 2n5551 2N5551 2N555 2N5550G 1N914 2N5550 2N5550RLRA 2N5550RLRAG 2N5550RLRP
    Text: 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector − Emitter Voltage Value Unit VCEO 2N5550 2N5551 Collector − Base Voltage


    Original     		2N5550, 2N5551 2N5550 2N5550/D 2N5551 circuit transistor equivalent 2n5551 2N5551 2N555 2N5550G 1N914 2N5550 2N5550RLRA 2N5550RLRAG 2N5550RLRP PDF

    2N555

    Abstract: 5401 transistor 2N 5551 2N5400 5551 555-1 transistor 2N5401 1000C 2N5401 2N5550
    Text: 2N5400 2N5550 2N 5401 2N5551 COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS CASE TO-92A THE 2N5400, 2N5401 PNP AND 2N5550, 2N5551 (NPN) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS INTENDED FOR GENERAL PURPOSE HIGH VOLTAGE AMPLIFIER AND SWITCHING APPLICATIONS.


    OCR Scan     		2N5400 2N5401 2N5550 2N5551 2N5400, 2N5401 2N5550, O-92A 2N5400 2N555 5401 transistor 2N 5551 5551 555-1 transistor 2N5401 1000C PDF

    2n5551

    Abstract: 2N55551 2N5551 circuit 2n5550
    Text: 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* • Device Marking: Device Type, e.g., 2N5550, Date Code http://onsemi.com COLLECTOR 3 2 BASE MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit


    Original     		2N5550, 2N5551 2N5550 2N5551 2N55551 2N5551 circuit PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS 2N5550; 2N5551 NPN high-voltage transistors 1999 Apr 23 Product specification Supersedes data of 1997 Apr 09 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN high-voltage transistors 2N5550; 2N5551


    OCR Scan     		2N5550; 2N5551 115002/00/03/pp8 PDF

    diodes inc 2N5551

    Abstract: 2N555 2N5551 hz 9102 2N5400 2N5401 2N5550 BP317 C2N5550
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5550; 2N5551 NPN high-voltage transistors Product specification Supersedes data of 1997 Apr 09 1999 Apr 23 Philips Semiconductors Product specification NPN high-voltage transistors 2N5550; 2N5551 PINNING


    Original     		M3D186 2N5550; 2N5551 2N5400 2N5401. MAM279 SCA63 115002/00/03/pp8 diodes inc 2N5551 2N555 2N5551 hz 9102 2N5401 2N5550 BP317 C2N5550 PDF

    2N5551 circuit

    Abstract: 2N5550 2N5551 2N555 1N914
    Text: ON Semiconductort 2N5550 2N5551* Amplifier Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit Collector–Emitter Voltage VCEO 140 160 Vdc Collector–Base Voltage VCBO 160 180 Vdc Emitter–Base Voltage


    Original     		2N5550 2N5551* 2N5551 226AA) r14525 2N5550/D 2N5551 circuit 2N5550 2N5551 2N555 1N914 PDF

    2N55551

    Abstract: 2N5551 2N5550 2N5550RLRA 2N5550RLRP 2N5550RLRPG 2N5551G 2N5551RL1 2N5551RLRA 2N5551RLRM
    Text: 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* • Device Marking: Device Type, e.g., 2N5550, Date Code http://onsemi.com COLLECTOR 3 2 BASE MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit


    Original     		2N5550, 2N5551 2N5550 2N5550/D 2N55551 2N5551 2N5550RLRA 2N5550RLRP 2N5550RLRPG 2N5551G 2N5551RL1 2N5551RLRA 2N5551RLRM PDF

    2N5551

    Abstract: No abstract text available
    Text: 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector − Emitter Voltage Value VCEO 2N5550 2N5551 Collector − Base Voltage Vdc 140


    Original     		2N5550, 2N5551 2N5550 2N5550/D 2N5551 PDF

    2N5551

    Abstract: 2N5551 circuit motorola 1N914 diode datasheet 1N914 2N5550 2N5551 diodes inc 2N5551 motorola
    Text: MOTOROLA Order this document by 2N5550/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5550 2N5551* NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit Collector – Emitter Voltage


    Original     		2N5550/D 2N5550 2N5551* 2N5550 2N5551 2N5550/D* 2N5551 2N5551 circuit motorola 1N914 diode datasheet 1N914 2N5551 diodes inc 2N5551 motorola PDF

    2N5551

    Abstract: 2N5550 2N5550G 2N55551 2N5551G 2N55551ZL1G 2N5551 TO92 2N5550RLRPG 2N5551RL1G 2N5551RLRAG
    Text: 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • These are Pb−Free Devices* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector − Emitter Voltage Value VCEO Vdc 140 160 2N5550 2N5551 Collector − Base Voltage VCBO Vdc VEBO


    Original     		2N5550, 2N5551 2N5550 2N5551 2N5550 2N5550G 2N55551 2N5551G 2N55551ZL1G 2N5551 TO92 2N5550RLRPG 2N5551RL1G 2N5551RLRAG PDF

    transistor equivalent 2n5551

    Abstract: 2N5551 equivalent transistor 2n5551 equivalent 2n2222 2n5401 2n5551 2N5551 148 BC237 2n3819 equivalent ic 2N5551 motorola
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5550 2N5551* NPN Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating Symbol 2N5550 2N5551 Unit Collector – Emitter Voltage VCEO 140 160 Vdc Collector – Base Voltage


    Original     		2N5550 2N5551* 2N5551 226AA) Resistanc218A MSC1621T1 MSC2404 MSD1819A MV1620 transistor equivalent 2n5551 2N5551 equivalent transistor 2n5551 equivalent 2n2222 2n5401 2n5551 2N5551 148 BC237 2n3819 equivalent ic 2N5551 motorola PDF

    2N5550 EBC

    Abstract: 2N5401 2N5400 5551 2N5550 T092A T0-92A N5400
    Text: 2N5401 2N5551 2N 5550 COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS i CASE TO-92A THE 2N5400, 2N5401 PNP AND 2N5550, 2N5551 (NPN) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS INTENDED FOR GENERAL PURPOSE HIGH VOLTAGE AMPLIFIER AND SWITCHING APPLICATIONS.


    OCR Scan     		2n5400, 2n5401 2n5550, 2n5551 T0-92A 2n5400 2n555q 2n5551 600mA 2N5550 EBC 2N5401 2N5400 5551 2N5550 T092A N5400 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N5400 2N5550 2N 5401 2N5551 COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS 1 CASE TO-92A THE 2N5400, 2N5401 PNP AND 2N5550, 2N5551 (NPN) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS INTENDED FOR GENERAL PURPOSE HIGH VOLTAGE AMPLIFIER AND SWITCHING APPLICATIONS.


    OCR Scan     		2N5400 2N5550 2N5551 O-92A 2N5400, 2N5401 2N5550, PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N5550 / 2N5551 2N5550 / 2N5551 General purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2005-12-22 Power dissipation Verlustleistung 18 9 16 E BC 2 x 2.54 Dimensions / Maße [mm] 625 mW Plastic case


    Original     		2N5550 2N5551 UL94V-0 2N5550 2N5400 2N5401 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N5550 / 2N5551 2N5550 / 2N5551 General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2006-06-17 Power dissipation Verlustleistung 18 9 16 CBE 2 x 2.54 Dimensions - Maße [mm] 625 mW Plastic case


    Original     		2N5550 2N5551 UL94V-0 2N5550 2N5400 PDF

    2N5551

    Abstract: BF242 CBVK741B019 F63TNR MMBT5551 PN2222N
    Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		2N5551 MMBT5551 2N5551 OT-23 BF242 CBVK741B019 F63TNR MMBT5551 PN2222N PDF

    2N5551

    Abstract: CBVK741B019 F63TNR MMBT5551 PN2222N 2N5551 SOT-23 BF242 CJE SOT-23
    Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		2N5551 MMBT5551 2N5551 OT-23 CBVK741B019 F63TNR MMBT5551 PN2222N 2N5551 SOT-23 BF242 CJE SOT-23 PDF

    2H5551

    Abstract: 2Ns551
    Text: 2N5550 2N5551* M AXIM UM RATINGS Sym bol 2N5550 2N5551 U n it Collector-Emitter Voltage VCEO 140 160 Vdc Collector-Base Voltage VCBO 160 180 Vdc Emitter-Base Voltage Rating vebo 6.0 Vdc Collector Current — Continuous fC 600 m Adc Total Device Dissipation @ TA - 25°C


    OCR Scan     		2N5550 2N5551* 2N5551 O-226AA) 2H5551 2H5551 2Ns551 PDF

    2N5550

    Abstract: 5551 2n 5551 2N5551 motorola 2NS551 2NSS51
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5550 2N5551* NPN Silicon COLLECTOR 3 ‘Motorola Preferred Device 1 EMITTER MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit Vdc C o lle c to r-E m itte r Voltage VCEO 140 160 C o lle c to r-B a s e Voltage


    OCR Scan     		2N5550 2N5551* 2N5550 2N5551 1N914 2NS851 5551 2n 5551 2N5551 motorola 2NS551 2NSS51 PDF