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    Microchip Technology Inc 2N5602

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    2N5602 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N5602 Semelab Bipolar NPN Device in a Hermetically Sealed TO66 Metal Package - Pol=NPN / Pkg=TO66 / Vceo=80 / Ic=2 / Hfe=70-200 / fT(Hz)=50M / Pwr(W)=20 Original PDF
    2N5602 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N5602 API Electronics Short form transistor data Short Form PDF
    2N5602 API Electronics TRANSISTOR,BJT,NPN,100V V(BR)CEO,5A I(C),TO-39 Scan PDF
    2N5602 General Semiconductor Low Frequency Silicon Power NPN Transistor Scan PDF
    2N5602 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N5602 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5602 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N5602 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N5602 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N5602 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N5602 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N5602 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N5602 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5602 Unknown Transistor Replacements Scan PDF
    2N5602 PPC Products Transistor Short Form Data Scan PDF
    2N5602 Silicon Transistor Low Frequency Silicon Power Transistor Scan PDF
    2N5602 Solidev Semiconductors Solid State Products (Transistor Guide) Scan PDF

    2N5602 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    b0239c

    Abstract: diode GG 66 diode 2U 66 MEAB to-53 2U 39 diode
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 2N5000 2N5150 2N5602 2N5154 2N6717 92GU06 92PU06 B0379-16 ~~~~~ 30 SOT5513 SOT5513 SOT5913 B0379-25 2SC3474 2S01914 2S01981 SK3512 - :g~~:~ - 25 35 -40 45 -50 RCA1A03 S2N4863-2 S2N4863-3 SMl5509 SMl5514


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    PDF OT5503 OT5903 2N6409 2S01516 b0239c diode GG 66 diode 2U 66 MEAB to-53 2U 39 diode

    2N5602

    Abstract: No abstract text available
    Text: 2N5602 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


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    PDF 2N5602 O213AA) 1-Aug-02 2N5602

    2N5598

    Abstract: 2N5600 2N5602 2N5604 5602 5604
    Text: SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N5598 2N5600 2N5602 2N5604 DESCRIPTION •With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For high frequency power amplifier ; audio power amplifier and drivers.


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    PDF 2N5598 2N5600 2N5602 2N5604 2N5598 2N5600/5602 2N5604 5602 5604

    2N5598

    Abstract: 2N5600 2N5604 2N5602 5604
    Text: Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5598 2N5600 2N5602 2N5604 DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Low collector-emitter saturation voltage APPLICATIONS ・For high frequency power amplifier ;


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    PDF 2N5598 2N5600 2N5602 2N5604 2N5598 2N5600/5602 2N5604 5604

    2N5600

    Abstract: 2N5598 2N5602 2N5604 5602 5604
    Text: Inchange Semiconductor Product Specification 2N5598 2N5600 2N5602 2N5604 Silicon NPN Power Transistors DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Low collector saturation voltage APPLICATIONS ・For high frequency power amplifier ;


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    PDF 2N5598 2N5600 2N5602 2N5604 2N5598 2N5600/5602 2N5604 5602 5604

    Untitled

    Abstract: No abstract text available
    Text: 2N5602 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


    Original
    PDF 2N5602 O213AA) 30-Jul-02

    BD119

    Abstract: BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR
    Text: STI Type: AD818 Notes: Polarity: NPN Power Dissipation: .50 VCEO: 20 hFE min: 200 hFE max: 600 hFE A: .01 Matching hFE: 10 Matching VBE: 2.0 Tracking: 5.0 Case Style: TO-71 Industry Type: AD818 STI Type: AD818DIE Industry Type: AD818DIE V CEO: 25 ICBO ICEX: 20


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    PDF AD818 AD818DIE AD820 AD821 AD820DIE O-204AA/TO-3 BD119 BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR

    2S721

    Abstract: bdy11 TO53 to-53 TO5-3 KT932A SDT5913
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CE on hFE fT ICBO Max Max k>N Max ON) Min (Hz) (A) (s) PD r (CE)Mt Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts r More, (Cont'd) . . . .5 . . . .10 . . . .15 .


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    PDF ST450 2S013 2N2383 2S721 2S723 2N3138 bdy11 TO53 to-53 TO5-3 KT932A SDT5913

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


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    PDF 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN

    2N4071

    Abstract: 2N6277 JANTXV 2N5626
    Text: BIPOLAR < O P EA K PACKAGE TO-213 10- 66 T0-204 (TO-3) DEVICE TYPE 2N4864 2N5598 2N5600 2N5602 2N5604 2N5606 2N5608 2N5610 2N5612 2N5661T 2N566J*2N5664*' 2H5665*2N5427 2N5428 2N5429 2N5430 bvceo •c VOLTS 120 60 80 80 100 60 80 80 100 200 300


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    PDF 2N4864 2N5598 2N5600 2N5602 2N5604 2N5606 2N5608 2N5610 2N5612 2N5661T 2N4071 2N6277 JANTXV 2N5626

    2n5430

    Abstract: No abstract text available
    Text: A POW ERHOUSE BIPOLAR VCE sat max VOLTS 2N4864 120 2.0 50-150 0.5/5.0 0.2 0.5/0.05 2N5598 60 2.0 70-200 1.0/5.0 0.85 2.0/0.2 2N5600 80 2.0 30- 90 1.0/5.0 0.85 2.0/0.2 2N5602 80 2.0 70-200 1.0/5.0 0.85 2.0/0.2 2N5604 100 2.0 30-90 1.0/5.0 0.85 2.0/0.2 *2N5606


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    PDF O-213 2N4864 2N5598 2N5600 2N5602 2N5604 2N5606 2N5608 2N5610 2N5612 2n5430

    Untitled

    Abstract: No abstract text available
    Text: BIPOLAR NPN PLANAR POWER TRANSISTORS TO-213 TO-66 'c VOLTS AMPS hFE min/max V CE (sat) max VOLTS •c @ 'b A A 2N4864 120 2.0 50-150 0.5/5.0 0.2 0.5/0.05 2N5598 60 2.0 70-200 1.0/5.0 0.85 2.0/0.2 2N5600 80 2.0 30- 90 1.0/5.0 0.85 2.0/0.2 2N5602 80 2.0 70-200


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    PDF O-213 2N4864 2N5598 2N5600 2N5602 2N5604 2N5606 2N5608 2N5610 2N5612

    LC51

    Abstract: No abstract text available
    Text: HI-REL SEUELAB SEMELABE BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Number Rel Code 2N5602 2N5603 2N5604 2N5605 2N5606 2N5607 2N5608 2N5609 2N5610 2N5611 2N5612 2N5613 2N5614 2N5615 2N5616 2N5617 2N5618 2N5619 2N5620 2N5621 2N5622 2N5623 2N5629


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    PDF A1331 2N5602 2N5603 2N5604 2N5605 2N5606 2N5607 2N5608 2N5609 2N5610 LC51

    SDT423

    Abstract: No abstract text available
    Text: _ 8 3686 02 SO LITRON D EV IC ES INC_ 95D 02758 SOLITRON DEVICES INC T5 D — T"“- 3 3 - 0 / Ïm F | ù3bflbD2 00D57SA S | T i - t^WÊÊÊFBlË • P L A N A R P O W ER TR A N S IS TO R S % 5m O < M M DEVICE TYPE hpE MIN/MAX @ ic A


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    PDF 00D57SA 2N2150 2N2151 2N3788 2N3917 2N3918 O-111 2N3025 2N3026 SDT423

    KSD 166

    Abstract: LT 7202 diode Kertron LA 4301 transistor KSP 13 801 KDA 1.2 2N5085 LT 7207 KSP 13 801 0/transistor KSP 13 801
    Text: Hi-Rel PLANAR POW ER-2 AMP NPN • ii lll ii TYPE CASE REAKDOWNilllllliH if i VOLTAGES Veb ' VCE 2N 1252 TO-5 VCB 30 2N 1253 TO-5 30 20 2N 1506 60 40 2N 1506A TO-5 TO-5 2N 1714 TO-5 80 60 2N 1716 TO-5 80 90 90 2N 1718 MT-13 90 60 2N 1720 MT-13 90 2N 1889 TO-5


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    PDF MT-13 KSD 166 LT 7202 diode Kertron LA 4301 transistor KSP 13 801 KDA 1.2 2N5085 LT 7207 KSP 13 801 0/transistor KSP 13 801

    1N5438

    Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
    Text: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­


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    PDF 27TfC 1N5438 tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


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    PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    germanium transistor

    Abstract: 2N5121 2N5418 2N5539 2N5637 V2205 MM8006
    Text: INTRODUCTION I I N . . . INDEX Numerical index of ElA-registered device types, w ith major electrical specifications 2N . . . & 3N . . . INDEX Numerical index of ElA-registered device types, with major electrical specifications DEVICE INDEX Complete alpha-numeric index of all device types


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    PDF

    4233A

    Abstract: 535x 184 324 DIODE 2N5383 2N3055C
    Text: Contran ÄTTM,© STAND ARD PART LIST [continued] Devices. Inc STANDARD DIODE CHIP SELECTIONS PART No. Vr MIN. VO LTS Vp@ M AX. VO LTS If A M PS. trr N SE C . PA G E No. 5 31X C 003 531X C 004 532X C 001 532X C 002 532X C 003 100 400 50 80 100 1.3 1.8


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    PDF 533XCD01 534XCD02 535XCQ01 2N1063 2N107Û 4233A 535x 184 324 DIODE 2N5383 2N3055C

    2N3026

    Abstract: 2N3025 2N5002 2N5004 2N5074 2N5075 2N5076 2N5077 2N5148 2N5150
    Text: I _ 12 E tljíJ E L E C T R O N IC S , INC. COLLECTOR CURRENT = 5 AMPS NPN TYPES— Continued Device No C ase 2N5002 TO 111/1 TO111/1 TO111/1 TO 111/1 TO 111/1 TO 111/1 TO -5 TO-5 TO 111/1 TO 111/1 TO -39 TO -39 TO-39 T O -39 TO -66 TO -66 TO-66 TO -66 TO-5


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    PDF 2N5002 2N5004 2N5074 2N5075 2N5076 2N5077 2N5148 2N5150 2N3021 2N3022 2N3026 2N3025

    2N3021

    Abstract: 2N3025 2N3026 2N5076 TO111 package 2N5002 2N5004 2N5074 2N5075 2N5077
    Text: 12 u l í u ELECTRONICS, INC. COLLECTOR CURRENT = 5 AMPS NPN TYPES— Continued Device No C ase 2N5002 T0111/1 TO111/1 TO111/1 TO 111/1 TO 111/1 TO 111/1 TO -5 TO-5 TO 111/1 TO 111/1 TO -39 TO -39 TO-39 T O -39 TO -66 TO -66 TO-66 TO -66 TO-5 TO-66 TO-66 TO-66


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    PDF 2N5002 2N5004 2N5074 2N5075 2N5076 2N5077 2N5148 2N5150 2N3021 2N3022 2N3025 2N3026 TO111 package

    LS 2027 audio amp

    Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
    Text: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3


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    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    Untitled

    Abstract: No abstract text available
    Text: Micmsemi NPN Transistors Part Number NPN JANTXV2N3420 JANTXV2N3420S 2N3419 2N3419S 2N3421 2N3421S JAN2N3419 JAN2N3419S JAN2N3421 JAN2N3421S JANS2N3419 JANS2N3419S JANS2N3421 JANS2N3421S JANTX2N3419 JANTX2N3419S JANTX2N3421 JANTX2N3421S JANTXV2N3419 JANTXV2N3419S


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    PDF NPN-10