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    Rochester Electronics LLC 2N5671

    TRANS NPN 90V 30A TO3
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    Microchip Technology Inc JAN2N5671

    TRANS NPN 90V 30A TO3
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    Microchip Technology Inc JANTX2N5671

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    Microchip Technology Inc JANTXV2N5671

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    2N5671 Datasheets (41)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N5671 Microsemi NPN Transistor Original PDF
    2N5671 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=90 / Ic=30 / Hfe=20-100 / fT(Hz)=50M / Pwr(W)=140 Original PDF
    2N5671 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N5671 API Electronics 25 AMPS / 30 AMPS NPN Transistors Scan PDF
    2N5671 Crimson Semiconductor MULTIEPITAXIAL Transistors Scan PDF
    2N5671 Diode Transistor Transistor Short Form Data Scan PDF
    2N5671 General Electric High-current, high-power, high-speed silicon N-P-N planar transistor. - Pol=NPN / Pkg=TO3 / Vceo=90 / Ic=30 / Hfe=20-100 / fT(Hz)=50M / Pwr(W)=140 Scan PDF
    2N5671 Mospec POWER TRANSISTORS(30A,140W) - Pol=NPN / Pkg=TO3 / Vceo=90 / Ic=30 / Hfe=20-100 / fT(Hz)=50M / Pwr(W)=140 Scan PDF
    2N5671 Mospec High Power NPN Silicon Power Transistor Scan PDF
    2N5671 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N5671 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N5671 Unknown Shortform Electronic Component Datasheets Short Form PDF
    2N5671 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N5671 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N5671 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N5671 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N5671 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5671 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5671 Unknown Transistor Replacements Scan PDF
    2N5671 Unknown Catalog Scans - Shortform Datasheet Scan PDF

    2N5671 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5672

    Abstract: 2N5671 2N5671JAN 15ADC 2N5671 JAN
    Text: TECHNICAL DATA 2N5671 JAN, JTX, JTXV 2N5672 JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/488 NPN HIGH-POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current


    Original
    PDF 2N5671 2N5672 MIL-PRF-19500/488 2N5671 2N5672 O-204AA) 2N5671JAN 15ADC 2N5671 JAN

    2N5672

    Abstract: 2N5671
    Text: SavantIC Semiconductor Product Specification 2N5671 2N5672 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High current ,high speed APPLICATIONS ·Intended for high current and fast switching industrial applications PINNING PIN DESCRIPTION


    Original
    PDF 2N5671 2N5672 2N5671 N5672 2N5672

    2N5672

    Abstract: 2n5671
    Text: Inchange Semiconductor Product Specification 2N5671 2N5672 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High current ,high speed APPLICATIONS ・Intended for high current and fast switching industrial applications PINNING PIN DESCRIPTION


    Original
    PDF 2N5671 2N5672 2N5671 2N5672

    2N5672

    Abstract: 2N5671 2N5671 JAN
    Text: TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/488 Devices Qualified Level 2N5671 JAN JANTX JANTXV 2N5672 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current


    Original
    PDF MIL-PRF-19500/488 2N5671 2N5672 2N5672 2N5671 2N5671 JAN

    2N5671

    Abstract: No abstract text available
    Text: 2N5671 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    PDF 2N5671 O204AA) 31-Jul-02 2N5671

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 488 Devices Qualified Level 2N5671 JAN JANTX JANTXV 2N5672 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current


    Original
    PDF MIL-PRF-19500/ 2N5671 2N5672

    2N5672

    Abstract: 2N5671
    Text: NPN 2N56712N5672 HIGH CURRENT FAST SWITCHING APPLICATIONS The 2N5671 and 2N5672 are silicon multiepitaxial planer NPN transistors in Jedec TO-3. They are especially intended for high current, fast switching industrial applications. ABSOLUTE MAXIMUM RATINGS


    Original
    PDF 2N5671 2N5672 2N5671 2N5672

    2N5330

    Abstract: 2N5672 2N4002 2N4003 2N5331 2N5584 2N5671 2N5733 2N5734 2N5966
    Text: Device Type VCEO hFE V Min/Max @ IC (A) 2N4002 2N4003 2N5330 2N5331 2N5584 2N5671 2N5672 2N5733 2N5734 2N5966 SDT6338 SDT6339 SDT6340 SDT6341 SDT8151 SDT8152 SDT8153 SDT8154 SDT8155 SDT8156 SDT8157 SDT8158 SDT8159 SDT8301 SDT8302 SDT8303 SDT8304 SDT44301


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    PDF 2N4002 2N4003 2N5330 2N5331 2N5584 2N5671 2N5672 2N5733 2N5734 2N5966 2N5330 2N5672 2N4002 2N4003 2N5331 2N5584 2N5671 2N5733 2N5734 2N5966

    Untitled

    Abstract: No abstract text available
    Text: 2N5671 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    PDF 2N5671 O204AA) 18-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: 2N5671 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    PDF 2N5671 O204AA) 16-Jul-02

    2N5672

    Abstract: 2N5671
    Text: Search Results Part number search for devices beginning "2N5671" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N5671 NPN TO3 90V 30A 20 100 2/15 50MHz


    Original
    PDF 2N5671" 2N5671 2N5671CECC 2N5671-JQR-B 50MHz 2N5672" 2N5672

    Untitled

    Abstract: No abstract text available
    Text: 2N5671+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)120º V(BR)CBO (V)120 I(C) Max. (A)30 Absolute Max. Power Diss. (W)80 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)12m¶ @V(CBO) (V) (Test Condition)110 V(CE)sat Max. (V).75 @I(C) (A) (Test Condition)15


    Original
    PDF 2N5671 Freq50M time500n

    Untitled

    Abstract: No abstract text available
    Text: GENERAL 3 9 1 6 590 ^ Ta SEMICONDUCTOR GENERAL SEMICONDUCTOR A General Semiconductor Industries, Inc • d F J b tiô s td 72C 0 1 9 3 0 D □ □ d i cî 3 0 7 ~ b 33 NPN TRANSISTOR CHIP « 5 Q U B R E TI COMPANY Typical Device Type: 2N1724, 2N5671, 2N5672


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    PDF 2N1724, 2N5671, 2N5672 250nsec 700nsec 200nsec 100mA, TWX910-950-1942

    2N5671

    Abstract: 2N5672 2N567 2N5872
    Text: 2N5671 2N5672 POWER TRANSISTORS 30A, 150V, Fast Switching, Silicon NPN Mesa DESCRIPTION These glass passivated power transistors combine fast-switching, low saturation voltage and rugged Es/b capability. They are designed for use in switching regulators, converters, Inverters and


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    PDF 2N5671 2N5672 2N5672 2N567 2N5872

    Untitled

    Abstract: No abstract text available
    Text: 7*^237 ¿57 002^353 1 • I-33-13 SGS-TH O M SON iuiOTsisioes 2N5671 2N5672 S G S-THOMSON 3DE ]> HIGH CURRENT FAST SWITCHING APPLICATIONS DESCRIPTION The 2N5671 and 2N5672 are silicon multiepitaxial planar NPN transistors in Jedec TO-3 metal case. They are especially intended for high current, fast


    OCR Scan
    PDF I-33-13 2N5671 2N5672 2N5671 2N5672 180nH 300ns, 2N5671-2N5672 T-33-13

    TA7323

    Abstract: 2N5671 2N5872
    Text: 2N5671, 2N5672 File Number 383 High-Current, High-Power, High-Speed Silicon N-P-N Planar Transistors For Switching and Amplifier Applications in Military, industrial and Commercial Equipment Feature*: • M a x im u m S a fe -A re a -o f-O p e ra tio n C urves Is/» lim it lin e b e g in n in g a t 24 V


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    PDF 2N5671, 2N5672 2N5671 2N5672* 2NS672 2NSS71 2NSS72. 2N5671S2N5672. TA7323 2N5872

    Untitled

    Abstract: No abstract text available
    Text: SEMELAB LTD 37E T> | fil33167 0000D23 3 1 TVpe No. Reliability Polarity Option 2N5656 2N5657 2N5663 2N5664 2N5665 SCREEN HI-REL HI-REL NPN NPN NPN NPN NPN 2N5666 2N5667 2N5671 2N56722N5675 HI-REL HI-REL CECC CECC HI-REL NPN NPN NPN NPN PNP 2N5676 2N5679 2N5680


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    PDF fil33167 0000D23 2N5656 2N5657 2N5663 2N5664 2N5665 2N5666 2N5667 2N5671

    Untitled

    Abstract: No abstract text available
    Text: May 1998 SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No 2N5661 2N5662 2N5663 2N5664 2N5664-SM 2N5665 2N5665-SM 2N5666 2N5666-SM 2N5667 2N5671 2N5671 CECC 2N5671 CECC 2N5672 2N5672 CECC 2N5672 CECC 2N5675 2N5676 2N5679 2N5680 2N5681 2N5681-SM


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    PDF 2N5661 2N5662 2N5663 2N5664 2N5664-SM 2N5665 2N5665-SM 2N5666 2N5666-SM 2N5667

    lb2h

    Abstract: 2N5672 2N5671 TA7323
    Text: 2N5671, 2N5672 HA RR IS SEUICON] S E C T O R File Number 5bE D • 383 4 3 0 2 27 1 00404b£j 517 B H A S '7^ High-Current, High-Power, High-Speed Silicon N-P-N Planar Transistors 3^ /^ For Switching and Am plifier Applications in Military, Industrial and Com m ercial Equipm ent


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    PDF 2N5671, 2N5672 00404b 2N5671 2N5672* 2N5672 2NS671 amp6671 2NS672. lb2h TA7323

    2N5671

    Abstract: LT 5245
    Text: TYPES 2N5671, 2N5672 N-P-N SILICON POWER TRANSISTORS FOR PO W ER -AM PLIFIER A N D HIGH-SPEED SW ITCH IN G APPLICATIO N S 03 - I C < 20 mJ Reverse Energy Rating I“ "O r m m w Min V B R C EO of 120 V (2N 5672) -i IS) i g M in t y of 50 M H z at 10 V , 2 A


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    PDF 2N5671, 2N5672 2N5671 LT 5245

    2N5672

    Abstract: 2N5671 81TI
    Text: ¿2&M0SPEC HIGH POWER NPN SILICON POWER TRANSISTORS NPN High-Current, High-Speed, High-Power Type for Switching and Amplifier Applications. 2N5671 2N5672 FEATURES: * DC Current Gain hFE = 20 ~ 100 @ lc = 15 A ,VCE=2.0 V * Low VCE SAT < 0.75 V @ lc=15A, lB=1,2A


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    PDF 2N5671 2N5672 2N5671, 81TI

    Untitled

    Abstract: No abstract text available
    Text: CRIMSON SEMICONDUCTOR INC ^ DE | 2514011, 0000336 t 2514096 C R IMSON SEMIC O N D U C T O R INC 00338 MULTIEPITAXIAL PLANAR - TO-3 continued Vcm Vein (V) (V) NPN BUX41 B U X41N B U X4 2 2N5038 2N5039 2N5671 2N5672 2N6032 2N6033 2N6354 2N6496 * ton 250 220


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    PDF BUX41 2N5038 2N5039 2N5671 2N5672 2N6032 2N6033 2N6354 2N6496

    2N5672 RCA

    Abstract: TA7323 2N5672 transistor RCA 2n5672 2N5671 transistor RCA 383 rca 2n5672 rca 383 transistor 2n56 Transistors bd 133
    Text: ~QÎ 387 5 0 8 1 DE | 3 ô 7 S a f i ï ^ D Ï Ï l 7 1 5 ^ o ^ | ~ G E SOLID STATE “ 01E 17129 D T"' H igh Speed Power Transistors. 2N5671, 2N5672 File Number 383 High-Current, High-Power, High-Speed Silicon N-P-N Planar Transistors F o r S w it c h in g a n d A m p lifie r A p p lic a tio n s in


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    PDF 2N5671, 2N5672 2N5671 2N5672* 92CS-IW52 2N5672. 2N5671 2N5672 RCA TA7323 transistor RCA 2n5672 transistor RCA 383 rca 2n5672 rca 383 transistor 2n56 Transistors bd 133

    2N5871

    Abstract: 2N5872
    Text: "D l 3875081 G E SO LID DE | 3 f l 7 S G f l l STATE DIDy?iST~Q “ 01E 17129 D 7"”" High Speed Pow er Transistors- 2N5671, 2N5672


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    PDF 2N5671, 2N5672 2N5671 2N5672* 387S061 0Q17132 2N5671 2N5672. 2N5871 2N5872