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    2N59 Search Results

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    2N59 Price and Stock

    Microchip Technology Inc 2N5956

    PNP POWER TRANSISTOR SILICON AMP
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    Microchip Technology Inc 2N5969

    TRANS PNP 100V 40A TO-63
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    Central Semiconductor Corp 2N5912

    TRANSISTOR DUAL TO78
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    Microchip Technology Inc 2N5966

    TRANS PNP 100V 40A TO-63
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    onsemi 2N5952_D74Z

    RF MOSFET JFET 15V TO92-3
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    2N59 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N59 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N59 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N59 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N59 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N59 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N59 Unknown Vintage Transistor Datasheets Scan PDF
    2N59 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N59 Unknown GE Transistor Specifications Scan PDF
    2N59 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5900 Germanium Power Devices Germanium Power Transistors Scan PDF
    2N5900 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N5900 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5900 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N5900 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5901 Germanium Power Devices Germanium Power Transistors Scan PDF
    2N5901 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N5901 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5901 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N5901 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5902 Calogic Monolithic Dual N-Channel JFET General Purpose Amplifier Scan PDF
    ...

    2N59 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N5952

    Abstract: 610-2N5952
    Text: 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Mouser Electronics Related Product Links 610-2N5952 - Central Semiconductor 2N5952


    Original
    610-2N5952 2N5952 2N5952 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N5908 LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET The 2N5908 is a high-performance monolithic dual JFET featuring tight matching and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications


    Original
    2N5908 VGS12 150fA PDF

    2n5955

    Abstract: 2N5954 2N5956 2N6374 2N6372 2N6373
    Text: Product Specification www.jmnic.com 2N5954 2N5955 2N5956 Silicon PNP Power Transistors DESCRIPTION ・With TO-66 package ・Low collector-emitter saturation voltage ・Excellent safe operating area ・Complement to type 2N6372 2N6373 2N6374 APPLICATIONS ・Designed for driver circuits,switching


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    2N5954 2N5955 2N5956 2N6372 2N6373 2N6374 2N5954 2N5955 2N5956 2N6374 PDF

    2N5973

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2N5973 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・High power dissipations APPLICATIONS ・Designed for general-purpose power amplifier and switching applications


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    2N5973 2N5973 PDF

    2N5972

    Abstract: No abstract text available
    Text: 2N5972 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    2N5972 O204AA) 31-Jul-02 2N5972 PDF

    2N5970

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2N5970 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·High power dissipations APPLICATIONS ·Designed for general-purpose power amplifier and switching applications


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    2N5970 2N5970 PDF

    2N5973

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2N5973 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·High power dissipations APPLICATIONS ·Designed for general-purpose power amplifier and switching applications


    Original
    2N5973 2N5973 PDF

    all ic datasheet

    Abstract: 2N5971
    Text: 2N5971 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    2N5971 O204AA) 31-Jul-02 all ic datasheet 2N5971 PDF

    2N5932

    Abstract: No abstract text available
    Text: 2N5932 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    2N5932 O204AA) 31-Jul-02 2N5932 PDF

    2N5956

    Abstract: No abstract text available
    Text: 2N5956 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a


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    2N5956 O213AA) 1-Aug-02 2N5956 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N5941 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)65 I(C) Max. (A)6.0 Absolute Max. Power Diss. (W)80# Maximum Operating Temp (øC)200þ I(CBO) Max. (A)5.0m¥x @V(CBO) (V) (Test Condition)28 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    2N5941 Freq50M PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N5950 Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)30 I(D) Max. (A) I(G) Max. (A)10m Absolute Max. Power Diss. (W)360m Maximum Operating Temp (øC)150þ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition)15 V(GS)off Min. (V)2.5 I(DSS) Max. (A)15m


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    2N5950 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N5946 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)16 V(BR)CBO (V)36 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)37# Minimum Operating Temp (øC)-65þ Maximum Operating Temp (øC)200þ I(CBO) Max. (A)2.0m @V(CBO) (V) (Test Condition)15


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    2N5946 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N5903 Transistors Dual N-Channel JFET Military/High-RelN V BR DSS (V)40 V(BR)GSS (V)40 I(D) Max. (A) I(G) Max. (A)10m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)150þ I(GSS) Max. (A)5.0p @V(GS) (V) (Test Condition)20 V(GS)off Min. (V).60


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    2N5903 PDF

    2n5952

    Abstract: No abstract text available
    Text: , One. ^smi-donciucto'i TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 (212) 227-6005 FAX: (973) 376-8960 U.S.A. 2N5952 N-Channel RF Ampifier • This device is designed primarily for electronic switching applications such as low on resistance analog switching.


    Original
    2N5952 27TYP 2n5952 PDF

    Untitled

    Abstract: No abstract text available
    Text: Qs.iui.ij cSe.mL-donau.atoi Lpioauati, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Untitled 2N593 Bidirectional Transistor - Pt 125mW,BVCBO 40V.ICBO S.OuA.hfe SOtyp.Cob 35p typ.NF ,16db,fab 600k


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    2N593 125mW PDF

    2N5744

    Abstract: TO61 2N5678 2N5741 2N5742 2N5743 2N5958 2N5960 SDT3101 SDT3102
    Text: Device Type 2N5678 2N5741 2N5742 2N5743 2N5744 2N5958 2N5960 SDT3101 SDT3102 SDT3103 SDT3104 SDT3850 SDT3851 SDT3852 SDT3875 SDT3876 SDT3877 VCEO V 100 60 100 60 100 100 100 40 60 80 100 40 80 40 40 80 40 hFE VCE @ IC (A) (sat) Max @ IC (A) Min/Max (V) 25/75


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    2N5678 2N5741 2N5742 2N5743 2N5744 2N5958 2N5960 SDT3101 SDT3102 SDT3103 2N5744 TO61 2N5678 2N5741 2N5742 2N5743 2N5958 2N5960 SDT3101 SDT3102 PDF

    2N5911

    Abstract: No abstract text available
    Text: 2N5911 SERIES N-Channel JFET Pairs C T S ificon ix incorporated The 2N5911 Series are JFET matched pairs mounted in a single TO-78 package. Ttiis two-chip design reduces parasitic performance at high-frequency while ensuring extremely tight matching. The 2N5911 features high


    OCR Scan
    2N5911 2N5912 MIL-S-19500. PDF

    2n5911

    Abstract: Siliconix N-Channel JFET
    Text: Tem ic 2N5911/5912 S e m i c o n d u c t o r s Matched N-Channel JFET Pairs Product Summary Part Number VGS off (V) V(BR)GSS M iö (V) gfc M in (mS) I g Typ (pA) !VGS 1 - V GS2I M ax (mV) 2N5911 -1 to - 5 -25 5 -1 10 2N5912 - i to —5 -25 5 -1 15 Applications


    OCR Scan
    2N5911/5912 2N5911 2N5912 P-37407--Rev. 04-Jul-94 Siliconix N-Channel JFET PDF

    Untitled

    Abstract: No abstract text available
    Text: Dual N-Channel JFET High Frequency Amplifier caiooic CORPORATION 2N5911/2N5912 ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified FEATURES • Tight Tracking • Low Insertion Loss • Good Matching Gate-Drain or Gate-Source Voltage . -25V


    OCR Scan
    2N5911/2N5912 367mW 500mW 2N5911 2N5912 DDDCH33 300nA, PDF

    2N5902 TO-92

    Abstract: No abstract text available
    Text: 2N5902 - 2N5909 CALOSIC CORP « E » • 18, 322 Monolithic Dual N-ChannelJFET General Purpose Amplifier ? » Q lUWlV CORPORATION - 'T*zn-zi 2N5902-2N5909 A B S O L U T E MAXIMUM RATINGS (T a = 25°C unless otherwise specified FEATURES • Tight Tracking


    OCR Scan
    2N5902 2N5909 2N5902-2N5909 367mW 100Hz 10MS2 2N5902 TO-92 PDF

    TA7920

    Abstract: equivalent of SL 100 NPN Transistor 2N5992 BT 812 7w RF POWER TRANSISTOR NPN RCA rf power transistor RCA Power Transistor 4 225
    Text: File No. 451 DUGBÆ I ^ Power T ransistors Solid State Division 2N5992 7-W A M ,6 6 -to -8 8 -M H z E m itte r-B a lla ste d S ilic o n N -P -N O verlay Transistor For 12.5-V Am plifiers in V H F Com m unications Equipm ent Features • • • • 7-W min. carrier output, 10-dB min. gain at 88 MHz


    OCR Scan
    2N5992 66-to-88-MHz 10-dB 2N5992 TA7920 equivalent of SL 100 NPN Transistor BT 812 7w RF POWER TRANSISTOR NPN RCA rf power transistor RCA Power Transistor 4 225 PDF

    2N5995

    Abstract: transistor ac 125 equivalent Arco 424 rca 632 92CS-17399 ARCO 0.1 Z VK 200-09 50N050
    Text: File No. 454 RF Power Transistors Solid State Division 2N5995 7-W, C W 175-M H z Silicon N-P-N Overlay Transistor For 12.5-Volt Applications in VHF Communications Equipment Features: • Low-inductance radial leads ■ Hermetically sealed ceramic-metal package


    OCR Scan
    2N5995 175-MHz 92SS-3763R3 2N5995 transistor ac 125 equivalent Arco 424 rca 632 92CS-17399 ARCO 0.1 Z VK 200-09 50N050 PDF

    2N5945

    Abstract: 2N5946 MOTOROLA 2N5946 2N5945 Motorola
    Text: T -33-Æ f MOTOROLA SC X S T R S / R F 4bE D b3b7254 0 0 T m i 2 4 • flôTb MOTOROLA ■ SEMICONDUCTOR 2N5944 2N5945 2N5946 TECHNICAL DATA The RF Line 2 .0 ,4 .0 ,1 0 W - 470 MHz RFPOWER TRANSISTORS NPN SILICON RF POWER TRANSISTORS NPN SILICON . . . designed for 7.0 to 15 Volts, U H F large signal amplifier applica*


    OCR Scan
    b3b7254 2N5944 2N5945 2N5946 VK200 20/4B 56-590-65-3B 2N5946 MOTOROLA 2N5946 2N5945 Motorola PDF