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    POWER TEHNOLOGIES JAN2N5926

    Bipolar Junction Transistor, NPN Type, TO-210AE (Also Known As: 2N5926JAN)
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    Quest Components JAN2N5926 118
    • 1 $47.8686
    • 10 $47.8686
    • 100 $38.2949
    • 1000 $38.2949
    • 10000 $38.2949
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    PowerTech Inc JAN2N5926

    Bipolar Junction Transistor, NPN Type, TO-210AE (Also Known As: 2N5926JAN)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components JAN2N5926 12
    • 1 $18
    • 10 $13.5
    • 100 $13.5
    • 1000 $13.5
    • 10000 $13.5
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    JAN2N5926 1
    • 1 $122.4204
    • 10 $122.4204
    • 100 $122.4204
    • 1000 $122.4204
    • 10000 $122.4204
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    Motorola Semiconductor Products 2N5922

    Bipolar Junction Transistor, NPN Type, STX-8
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    Quest Components 2N5922 1
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    Motorola Semiconductor Products 2N5923

    Bipolar Junction Transistor, NPN Type, STX-8
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    Quest Components 2N5923 1
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    2N592 Datasheets (92)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N592 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N592 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N592 Unknown GE Transistor Specifications Scan PDF
    2N592 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N592 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N592 Unknown Vintage Transistor Datasheets Scan PDF
    2N592 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5920 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N5920 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N5920 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5920 RCA Solid State RF Power Devices Data Book 1974 Scan PDF
    2N5921 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N5921 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N5921 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5921 RCA Solid State RF Power Devices Data Book 1974 Scan PDF
    2N5922 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N5922 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5922 Unknown Transistor Replacements Scan PDF
    2N5922 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N5922 Unknown Shortform Transistor Datasheet Guide Short Form PDF

    2N592 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N5929 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N5929 O204AA) 18-Jun-02

    2N5929

    Abstract: No abstract text available
    Text: 2N5929 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N5929 O204AA) 16-Jul-02 2N5929

    2N5926 JANTX

    Abstract: 2N5926
    Text: NOTICE OF CANCELLATION INCH-POUND MIL-S-19500/447A NOTICE 3 13 January 2005 SUPERSEDING NOTICE 2 12 May 2004 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, SILICON, POWER TYPE 2N5926 JANTX AND JANTXV MIL-S-19500/447A, dated 10 June 1991, is hereby canceled. Future acquisition for this material should refer to


    Original     		PDF MIL-S-19500/447A 2N5926 MIL-S-19500/447A, 2N5926 JANTX 2N5926

    Untitled

    Abstract: No abstract text available
    Text: 2N5927 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)150 I(C) Max. (A)100 Absolute Max. Power Diss. (W)200# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)2.0m¶ @V(CBO) (V) (Test Condition)150 V(CE)sat Max. (V)2.0 @I(C) (A) (Test Condition)120


    Original     		PDF 2N5927 Freq500k

    Untitled

    Abstract: No abstract text available
    Text: 2N5929 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)90 I(C) Max. (A)30 Absolute Max. Power Diss. (W)100# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)5.0m¶ @V(CBO) (V) (Test Condition)90 V(CE)sat Max. (V)2.0 @I(C) (A) (Test Condition)10


    Original     		PDF 2N5929 Freq30M time500n

    2N5929

    Abstract: No abstract text available
    Text: 2N5929 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N5929 O204AA) 31-Jul-02 2N5929

    2N5927

    Abstract: No abstract text available
    Text: NOTICE OF CANCELLATION INCH-POUND MIL-S-19500/440A ER NOTICE 3 13 January 2005 SUPERSEDING NOTICE 2 24 March 2004 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON TYPE 2N5927 JANTX AND JANTXV MIL-S-19500/440A(ER), dated 10 June 1991, is hereby canceled. Future acquisition for this material should refer to


    Original     		PDF MIL-S-19500/440A 2N5927 2N5927

    TO114

    Abstract: to63 SDT96304 SDT55405 SDT96306 2N5926 2N6060 2N6215 DSASW0036862 2N6279
    Text: VCE Device Type VCEO hFE V Min/Max 2N5926 2N6060 2N6215 2N6278 2N6279 2N6280 2N6281 SDT55405 SDT55407 120 100 80 100 120 140 150 150 200 10/40 25/120 25/150 30/120 30/120 30/120 30/120 10/50 10/50 50.0 20.0 25.0 20.0 20.0 20.0 20.0 50.0 50.0 SDT79823 80


    Original     		PDF 2N5926 2N6060 2N6215 2N6278 2N6279 2N6280 2N6281 SDT55405 SDT55407 SDT79823 TO114 to63 SDT96304 SDT55405 SDT96306 2N5926 2N6060 2N6215 DSASW0036862 2N6279

    PT-8502

    Abstract: 2N5928 TO114 D741D 350w dc motor Powertech DDGQ310 PT8502 LJ15 PT850
    Text: 17E D • 72^071=4 GDGDBCH b POÜJERTECH INC “BIG IDEAS IN BIG POWER" ■ ■ ■ PowerTech -p ■ 150 AMPERES 2N592B PT-B502 SILICON IN IPINI TRANSISTOR FEATURES: v C E s a t . 1.0 V 100 A V B E . 2.0 V @ 100 A


    OCR Scan     		PDF 721fl7L 2N592B O-114 Lj-15 QJ-2NS552 IC-50A PT-8502 2N5928 TO114 D741D 350w dc motor Powertech DDGQ310 PT8502 LJ15 PT850

    c2689

    Abstract: Z027 diode cc 3053 diode Z027 cc 3053 npn marking tx 2N5926 TX2N5926 transistor AS 431 tx transistor
    Text: MIL SPECS IC |DDGD1SS 0Dl3ñSb 1 MIL-S-19500/447 NOTICE 1 5 F e b r u a r y 1988 N O T I C E OF VALIDATION MILITARY SPECIFICATION S e m i c o n d u c t o r Device, Transistor, NPN, S i l i c o n P ower Types 2N5926 and TX2 N 5 9 2 6 M I L - S - 1 9 5 0 0 / 4 4 7 and A m e n d m e n t 3 d a t e d 25 Feb. 1981, h a v e b e e n


    OCR Scan     		PDF MIL-S-19500/447 2N5926 TX2N5926 0D13flS7 MiL-S-l9500/447 5961-A340 c2689 Z027 diode cc 3053 diode Z027 cc 3053 npn marking tx TX2N5926 transistor AS 431 tx transistor

    Transistor 2gmz

    Abstract: westinghouse relay c8 2N5921 radar distance 2N5120 allen bradley potentiometer type j ALLEN-BRADLEY POTENTIOMETER WESTINGHOUSE ELECTRIC 2N5920 WESTINGHOUSE driver
    Text: File No. 440 , RF Pow er T ran sisto rs □G Q B Æ I Solid State Division 2N5920 2-W ,2-G H z, Em itter-Ballasted Silicon N -P -N O verlay Transistor F o r U H F /M ic ro w a v e Pow er A m p lifie r s , M icrow ave F u n d a m e n ta l-F re q u e n c y O s c illa to rs and


    OCR Scan     		PDF 2N5920 10-dB 12-dB 2N5920* O-215AA Transistor 2gmz westinghouse relay c8 2N5921 radar distance 2N5120 allen bradley potentiometer type j ALLEN-BRADLEY POTENTIOMETER WESTINGHOUSE ELECTRIC 2N5920 WESTINGHOUSE driver

    AP1069

    Abstract: AP1112 2N5489 2N5685 2N5686 2N5926 2N6032 2N6215 2N6274 2N6275
    Text: A P I ELECTRONICS 0043592 A P I INC _ 2b ELECTRONICS DE 1 0 0 4 3 5 ^ 5 ZbC INC D O D O S B 11] S |~ D ~ fZ 3 3 ~ £ 00239 C O L L E C T O R C U R R E N T = 5 0 A M PS N PN T Y PE S D ev ice No C a se VCBO V olts VCEO (sus) V olts 2N5685 2N5686 2N5926 2N6032


    OCR Scan     		PDF 004BSTS 2N5685 2N5686 2N5926 2N6032 2N6215 2N6274 2N6275 2N6276 2N6277 AP1069 AP1112 2N5489

    D0307

    Abstract: marking a007 vqe 24 er 2N5927 marking JTs US ARMY TRANSISTOR CROSS
    Text: □ 00 MIL SPECS • 0000125 0030751 fl ■ MILS MIL -S-19500/440A ER 10 June 1991 SUPERSEDING MIL -S-19500/440(ER) 17 November 1970 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPE 2N5927, JANTX AND JANTXV This specification is approved for use by US Army Laboratory


    OCR Scan     		PDF MIL-S-19500/440A MIL-S-19500/440( 2N5927, MIL-S-19500. 5961-A007) D0307 marking a007 vqe 24 er 2N5927 marking JTs US ARMY TRANSISTOR CROSS

    PT8502

    Abstract: PT-8502 350w dc motor 2N5928 powertech DC motor 350W TO114 2N5552 NPN 350W rfft
    Text: BIG IDEAS IN H PowerTech BIG POWER ” • 150 AMPERES 2N5928 PT-85Q2 SILICON IMPIM TRANSISTOR FEATURES: v CE sat 1.0 V @ 100 A h p E . 5 min @ 150 A V 2 .0 V @ 100 A t f . 2.5 |i sec BE 1.2 A @ 100 V


    OCR Scan     		PDF 2N5928 PT-85Q2 O-114 200mA, 100KHz 100KHZ PT8502 PT-8502 350w dc motor powertech DC motor 350W TO114 2N5552 NPN 350W rfft

    TA7205

    Abstract: Johanson 2954 capacitor 2N5921 sealectro boonton 230A radar distance sealectro 095 673 RCA transistor Allen-Bradley 1333 300 watts amplifier s-band
    Text: File No. 427 . R F P o w e r Transisto rs S c ilid S t a t e Dívision 2N5921 5 -W ,2 -G H z , E m itte r-B a lla s te d Silicon N -P -N O verlay T ra n s is to r For U H F /M ic ro w a v e Power A m plifiers, Microw ave Fun d am ental-F requ en cy Oscillators and Frequency M ultip liers


    OCR Scan     		PDF 2N5921 O-201AA 2N5921 UHF/Micro567IRI TA7205 Johanson 2954 capacitor sealectro boonton 230A radar distance sealectro 095 673 RCA transistor Allen-Bradley 1333 300 watts amplifier s-band

    AP1069

    Abstract: 2N6274 AP1112 to63 2N5685 2N5686 2N5926 2N6032 2N6215 2N6275
    Text: A P I ELECTRONICS INC 0043592 A P I _ 2^ ELECTRONICS DE 1 00435^5 DOODEaì S | ~ INC ZbC 00239 ~fZ33~£ COLLECTOR CURRENT = 5 0 AMPS NPN TYPES Device No C ase VCBO Volts VCEO (sus) Volts 2N5685 2N5686 2N5926 2N6032 2N6215 2N6274 2N6275 2N6276 2N6277 2N6278


    OCR Scan     		PDF 2N5685 2N5686 2N5926 2N6032 2N6215 2N6274 2N6275 2N6276 2N6277 2N5968 AP1069 AP1112 to63

    TRANSISTOR C 5928

    Abstract: PT8502 NPN 350W powertech 2N5928
    Text: BIG IDEAS IN PowerTech BIG POWER ’’ • 150 AMPERES 2N5928 PT-85D2 SILICON NPN TRANSISTOR FEATURES: V C E s a t . 1.0 V @ 100 A i p E . V B E . 2.0 V @ 100 A t r .


    OCR Scan     		PDF 2N5928 PT-85D2 TRANSISTOR C 5928 PT8502 NPN 350W powertech

    2N1479

    Abstract: 2N1480 2N1481 2N1482 2N1700 2N5781 2N5782 2N5784 2N5785 2N5786
    Text: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863


    OCR Scan     		PDF O-39/TO-5 D00D1SS 515TQft 2N1479 2N1480 2N1481 2N1482 2N1700 2N5784 2N5785 2N5781 2N5782 2N5786

    DTS-425

    Abstract: 2N5929 2N5930 2N5931 2N5932 2N5933 2N5934 2N5935 2N5936 2N5937
    Text: ÖM DIODE TRANSISTOR CO INC NPN TO-aiconid Typ«* PHP Comp a- Vcew sus men VolU) & hFE @IC/VCE (Min-Max @A/V> DE |SÖ4fl35E ODOOia4 3 " IS/b Ice» pd ®Vce ®VCE T c- 2 9 °c T = 1*ao (mA @ V) (Watts) (A ® ») VCEfSAT) ®IC/lB (¥ ® A/A) »BE o ic /vce


    OCR Scan     		PDF Sfi4fl35E T-33-15 Tc-29Â 2N5929 2N5930 2N5931 2N5932 2N5933 2N5934 2N5935 DTS-425 2N5936 2N5937

    2N558B

    Abstract: 2N3S49 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3848 2N4002
    Text: General Transistor Corporation CASE TO-63 le max = 20 to 60A V c e o (su s) NPN Power Transistors Typ*No. VCEO (•!*) <v) IC (mu) (A) hFE&C/VCE (min-mi* Q AY) VCE(SAT) QIC/IB (V0A/A) VBE ic/vce (V©A/V) VBE (SAT) ©OB (V0A/V) 2N1936 2N1937 2N3265


    OCR Scan     		PDF 0-300V 2N1936 2N1937 2N3265 2N3266 2N5250 2N5251 2N5489 2N5587 2N558B 2N558B 2N3S49 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3848 2N4002

    TO63 package

    Abstract: 2N5250 2N3265 transistor 114 2N5539 2N3150 2N3266 2N3847 2N4002 2N4003
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-63 PACKAGE DEVICE TYPE V ceo sus VOLTS Ic (max) AMPS 1*FE@ Ic/ V ce (min/max @ A/V) VcE(sat) @ I c/I b (V @ A/A) p“ d * WATTS Ìt (MHz) NPN TO-63 2N3265 90 20 25-55@15/2 l@20/2 100 20 2N3266 60 20 20-80@15/3


    OCR Scan     		PDF 2N3265 2N3266 2N3846 2N3847 2N4002 2N4003 2N5539 2N6046 2N6047 2N6048 TO63 package 2N5250 transistor 114 2N3150

    transistor s71

    Abstract: 2N1489 2N5671 2N1487 2N1488 2N1490 2N3055A 2N3713 2N3714 2N3771
    Text: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-3 PACKAGE DEVICE TYPE Vceo sus VOLTS Ic (max) AMPS 1*FE@ I f / V c E V c E (ja t) (min/max @ A/V) @ Ic^B (V @ A/A) p * r D WATTS fT (MHz) NPN 2N1487 40 6 15-45@1.5/4 3@1.5/.3 75 1.0 TO-3 2N1488 55 6 15-45@ 1.5/4


    OCR Scan     		PDF 2N1487 2N1488 2N1489 2N1490 2N3055A 2N3713 2N3714 2N3715A 2N3716A 2N3771 transistor s71 2N5671

    2N5866

    Abstract: 2n4348 semiconductor 212S 2N5675 2N5867 2N5872 NES 2N5672 2n5038 2n3447
    Text: NElil ENGLAND SEMICONDUCTOR bSbM ^a S'ìE D dogooss lc M AX — 2-50 A V ceo(sus) = 3 5-5 00 V fT = 0.2-50 MHz NPN TO-3 Case 803 Case 804 PN P Complé­ ment -r-33 -6( Icev @ V ce (mA @ V) Po @ TC = 25 °C (Watts) 025b@30 025b@30 025 @30 025b@30 75 75 75


    OCR Scan     		PDF 5-500V 2n1487 2n1488 2n1489 2n1490 5n5883 2n5886 2n5884 2n5929 2n5930" 2N5866 2n4348 semiconductor 212S 2N5675 2N5867 2N5872 NES 2N5672 2n5038 2n3447

    2N5251

    Abstract: 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3849 2N4002 TO114
    Text: NEU ENGLAND SEMICON DUC TOR bSbM'îSB 0 0 0 0 0 5 7 5RE T> 14 3 • Ic max = 2 0 to 6 0 A V ceo(sus) = 4 0 to 3 0 0 V fi = 0 .6 to 3 0 MHz IMPN TO-B3 Case 807 ' tc (MAX) (A) hFE @ IC/VCE (min-max @ A/V) 2N1936 2N1937 2N3265 2N3266 60 80 90 60 20 20 20 20


    OCR Scan     		PDF 000g05 2N1936 2N1937 2N3265 2N3266 1o05w1o 2n5250 2n5251 2n5489 2n5587 2N5251 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3849 2N4002 TO114