2N6298 Search Results

2N6298

Abstract: 2N6299 2N6300 2N6301
Contextual Info: 2N6298, 2N6299 PNP I 2N6300, 2N6301 NPN ELECTRICAL CHARACTERISTICS Tc = 25°C unless otherwise noted Symbol Characteristic Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) ( lc = 100 mA, lB = 0 ) Collector Cutoff Current ( V CE = 30 V, lB = 0 )

Contextual Info: 2N6298 2N6299 2N6300 2N6301 PNP NPN COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6298 series devices are complementary silicon Darlington power transistors manufactured by the epitaxial base process

2N6299 JANTX

Abstract: 2N6298 1000C 2N6299
Contextual Info: TECHNICAL DATA PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/540 Devices Qualified Level 2N6298 JAN JANTX JANTXV 2N6299 MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current

Contextual Info: PNP Darlington Power Silicon Transistor 2N6298 & 2N6299 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/540 • TO-66 TO-213AA Package Maximum Ratings Symbol 2N6298 2N6299 Units Collector - Emitter Voltage Ratings VCEO 60 80 Vdc Collector - Base Voltage

Contextual Info: 2N6298 60 V darlington complementary PNP silicon power transistor 12.35 Transistors . Page 1 of 1 Enter Your Part # Home Part Number: 2N6298 Online Store 2N6298 Diodes 60 Transistors V darlington complementary PNP silicon transistor Integrated Circuits Optoelectronics

2n6299

Contextual Info: TECHNICAL DATA 2N6298 JAN, JTX, JTXV 2N6299 JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/540 PNP DARLINGTON POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current

2N6298

Abstract: 1000C 2N6299
Contextual Info: TECHNICAL DATA 2N6298 JAN, JTX, JTXV 2N6299 JAN, JTX, JTXV Processed per MIL-PRF-19500/540 PNP DARLINGTON POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current

2N6649A

Abstract: 2N63 2n6301a 2n6353a
Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR DARLINGTON PNP TRANSISTOR PACKAGE DEVICE TYPE VcEO sus VOLTS Ic (max) AMPS PNP TO-66 2N6298A 60 2N6299A @ Ic/ ^ C E min/max @ A/V VcE(Mt) @ I c/I b V @ A/A c <p P fx (MHz) 8.0 750/18000@6/3 2.0@4/.016 300 4.0 80 8.0 750/18000@6/3

2N6352

Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR DARLINGTON PNP TRANSISTOR PACKAGE PNP TO-66 Ic VcEO sus VOLTS (max) AMPS ^FE @ ^CE min/max @ A/V @Ic/Iß V @ A/A C<p P Ìt (MHz) 2N6298 60 8.0 750/18000@6/3 2.0@4/.016 300 4.0 2N6299 80 8.0 750/18000@6/3 2.0@4/.016 300 4.0

Contextual Info: 2N6298 and 2N6299 PNP Darlington Power Silicon Transistor Available on commercial versions Qualified per MIL-PRF-19500/540 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed PNP transistor is rated at 8 amps and is military qualified up to a JANTXV

semelab 2N6287

Abstract: 2N6378E
Contextual Info: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No 2N6270 2N6271 2N6274 2N6274A 2N6275 2N6275A 2N6276 2N6276A 2N6277 2N6277A 2N6278 2N6279 2N6280 2N6281 2N6282 2N6283 2N6284 2N6285 2N6286 2N6287 2N6294 2N6295 2N6296 2N6297 2N6298 2N6299 2N6300

Contextual Info: Search Results Part number search for devices beginning "2N6298" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N6298 PNP TO66 60V 8A 750 18000 3/4 4MHz

Contextual Info: 2N6298+JAN Transistors PNP Darlington Transistor Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)75# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)500u÷ @V(CBO) (V) (Test Condition)60 h(FE) Min. Current gain.750

Contextual Info: 2N6298+JANTX Transistors PNP Darlington Transistor Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)75# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)500u÷ @V(CBO) (V) (Test Condition)60 h(FE) Min. Current gain.750

2N6298

Abstract: 2N6299
Contextual Info: Product Specification www.jmnic.com 2N6298 2N6299 Silicon PNP Power Transistors DESCRIPTION ・With TO-66 package ・DARLINGTON ・Low collector saturation voltage ・Complement to type 2N6300/6301 APPLICATIONS ・General purpose power amplifier and low frequency switching applications

2N6298

Abstract: 2N6299
Contextual Info: SavantIC Semiconductor Product Specification 2N6298 2N6299 Silicon PNP Power Transistors DESCRIPTION •With TO-66 package ·DARLINGTON ·Low collector saturation voltage ·Complement to type 2N6300/6301 APPLICATIONS ·General purpose power amplifier and low frequency switching applications

2N6298

Abstract: 2N6299
Contextual Info: Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6298 2N6299 DESCRIPTION ・With TO-66 package ・DARLINGTON ・Low collector saturation voltage ・Complement to type 2N6300/6301 APPLICATIONS ・General purpose power amplifier and

2N6300

Abstract: 2N6301 2N6301 applications
Contextual Info: Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6300 2N6301 DESCRIPTION •With TO-66 package ·DARLINGTON ·Low collector saturation voltage ·Complement to type 2N6298/6299 APPLICATIONS ·General purpose power amplifier and low frequency switching applications

t066

Abstract: 2n6354a 2N6278 2N6279 2N6280 2N6281 2N6282 2N6283 2N6284 2N6285
Contextual Info: MfiE » • 0133107 D0DD443 5EMELABI Type Number Rei Code 2N6278 2N6279 2N6280 2N6281 2N6282 2N6283 2N6284 2N6285 2N6286 2N6287 2N6294 2N6295 2N6296 2N6297 2N6298 2N6299 2N6300 2N6301 2N6302 2N6303 2N6306 2N6307 2N6308 2N6312 2N6313 2N6314 2N6315 2N6316 2N6317

Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR DARLINGTON PNP TRANSISTOR PACKAGE DEVICE TYPE V ceo sus VOLTS Ic (max) AMPS PNP TO-66 2N6298A 60 8.0 2N6299A 80 2N6648A 1*FE @ ^c/ ^CE min/max @ A/V VcE(Ml) @ I c/I b V @ A/A c <p P fr (MHz) 750/18000@6/3 2.0@4/.016 300

2N6298

Abstract: Darlington 40A 2n6300
Contextual Info: 2N6298 2N6299 2N6300 2N6301 PNP NPN COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6298 series types are complementary silicon darlington power transistors manufactured by the epitaxial base process

Contextual Info: PNP Darlington Power Silicon Transistor 2N6298 & 2N6299 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/540 • TO-66 TO-213AA Package Maximum Ratings Symbol 2N6298 2N6299 Units Collector - Emitter Voltage Ratings VCEO 60 80 Vdc Collector - Base Voltage

2N6300

Abstract: 2N6301 2N6298
Contextual Info: SavantIC Semiconductor Product Specification 2N6300 2N6301 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·DARLINGTON ·Low collector saturation voltage ·Complement to type 2N6298/6299 APPLICATIONS ·General purpose power amplifier and low frequency switching applications

2N6298

Abstract: 2N6298 JAN
Contextual Info: 2N6298 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a