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    2N632 Price and Stock

    Microchip Technology Inc 2N6328

    TRANS NPN 100V 30A TO3
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    Microchip Technology Inc 2N6329

    NPN TRANSISTOR
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    Microchip Technology Inc 2N6323

    POWER BJT
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    Microchip Technology Inc 2N6322

    POWER BJT
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    Microchip Technology Inc 2N6326

    TRANS PNP 60V 30A TO3
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    Find more 2N632 price and stock on Findchips.com

    2N632 Datasheets (193)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N632 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N632 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N632 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N632 Unknown Vintage Transistor Datasheets Scan PDF
    2N632 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N632 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N632 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N632 Unknown GE Transistor Specifications Scan PDF
    2N632 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N632 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6320 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6320 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6320 RCA Solid State Power Transistor Directory 1976 Scan PDF
    2N6321 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6321 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6322 API Electronics 25 AMPS / 30 AMPS NPN Transistors Scan PDF
    2N6322 Diode Transistor Transistor Short Form Data Scan PDF
    2N6322 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N6322 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6322 Unknown Shortform Electronic Component Datasheets Short Form PDF
    ...

    2N632 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6328

    Abstract: Audio Amplifier 2n6328 2N6326 2N6327
    Text: Inchange Semiconductor Product Specification 2N6326 2N6327 2N6328 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・High DC current gain APPLICATIONS ・Designed for audio amplifier and switching circuits applications


    Original     		PDF 2N6326 2N6327 2N6328 2N6326 2N6327 2N6328 Audio Amplifier 2n6328

    2N6328

    Abstract: 2N6326 Audio Amplifier 2n6328 2N6327
    Text: SavantIC Semiconductor Product Specification 2N6326 2N6327 2N6328 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·High DC current gain APPLICATIONS ·Designed for audio amplifier and switching circuits applications


    Original     		PDF 2N6326 2N6327 2N6328 2N6326 2N6327 2N6328 Audio Amplifier 2n6328

    2N6322

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2N6322 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High current and high power capability ·Low collector saturation voltage APPLICATIONS ·For use in high current ,high power applications PINNING


    Original     		PDF 2N6322 2N6322

    Untitled

    Abstract: No abstract text available
    Text: 2N6323 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300 V(BR)CBO (V)400 I(C) Max. (A)30 Absolute Max. Power Diss. (W)200# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)5.0m° @V(CBO) (V) (Test Condition)150 V(CE)sat Max. (V)3.0 @I(C) (A) (Test Condition)30


    Original     		PDF 2N6323 Freq10M

    Untitled

    Abstract: No abstract text available
    Text: 2N6321 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)140 V(BR)CBO (V)160 I(C) Max. (A)80 Absolute Max. Power Diss. (W)300# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)160 V(CE)sat Max. (V)3.25 @I(C) (A) (Test Condition)80


    Original     		PDF 2N6321 time400n

    Untitled

    Abstract: No abstract text available
    Text: 2N632 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)24ã V(BR)CBO (V)30 I(C) Max. (A)50m Absolute Max. Power Diss. (W)167m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)25u @V(CBO) (V) (Test Condition)20 h(FE) Min. Current gain. h(FE) Max. Current gain.


    Original     		PDF 2N632

    2N6322

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2N6322 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High current and high power capability ·Low collector saturation voltage APPLICATIONS ·For use in high current ,high power applications PINNING


    Original     		PDF 2N6322 2N6322

    Untitled

    Abstract: No abstract text available
    Text: 2N6329 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)30 Absolute Max. Power Diss. (W)114# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m° @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V)3.0 @I(C) (A) (Test Condition)30


    Original     		PDF 2N6329

    Untitled

    Abstract: No abstract text available
    Text: 2N6322 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)200 V(BR)CBO (V)300 I(C) Max. (A)30 Absolute Max. Power Diss. (W)200# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)5.0m° @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V)3.0 @I(C) (A) (Test Condition)30


    Original     		PDF 2N6322 Freq10M

    Untitled

    Abstract: No abstract text available
    Text: 2N6327 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)30 Absolute Max. Power Diss. (W)114# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m° @V(CBO) (V) (Test Condition)40 V(CE)sat Max. (V)3.0 @I(C) (A) (Test Condition)30


    Original     		PDF 2N6327

    Untitled

    Abstract: No abstract text available
    Text: 2N6325 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300 V(BR)CBO (V)400 I(C) Max. (A)30 Absolute Max. Power Diss. (W)200# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)5.0m° @V(CBO) (V) (Test Condition)150 V(CE)sat Max. (V)3.0 @I(C) (A) (Test Condition)30


    Original     		PDF 2N6325 Freq10M

    2N6320

    Abstract: No abstract text available
    Text: 2N6320 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)140 I(C) Max. (A)80 Absolute Max. Power Diss. (W)300# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)140 V(CE)sat Max. (V)3.25 @I(C) (A) (Test Condition)80


    Original     		PDF 2N6320 time400n

    Untitled

    Abstract: No abstract text available
    Text: 2N6326 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)30 Absolute Max. Power Diss. (W)114# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m° @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V)3.0 @I(C) (A) (Test Condition)30


    Original     		PDF 2N6326

    2n6325

    Abstract: 2N6323 on 5297 transistor 2N6322 2N6324 NS2N
    Text: TYPES 2N6322 THRU 2N6325 N-P-N SILICON POWER TRANSISTORS TYPES 2N6322 THRU 2N6325 BULLETIN NO. DL-S 7211589, JANUARY HIGH VOLTAGE, HIGH FORWARD AND REVERSE ENERGY DESIGNED FOR INDUSTRIAL AND M ILIT A R Y APPLICATIONS • 100-mJ Reverse-Energy Rating • 30-A Rated Continuous Collector Current


    OCR Scan     		PDF 2N6322 2N6325 100-mJ 2N6323, 2N6325) 2N6322. 2N6323 2N6324, 2N6323 on 5297 transistor 2N6324 NS2N

    2N4398

    Abstract: 2N4399 2N6329 2N6330 2N6331 AP1020 AP1021 AP1048 AP1049 AP1050
    Text: 0043592 A P I A P I ELECTRONICS ELECTRONICS INC INC D yZ-SS-TX 26C 0 0 2 3 8 ' Sb DE | OOMBSTS 3 C O L L E C T O R C U R R E N T = 3 0 A M PS P N P T Y P E S D e v ic e No C a se 2N4398 2N4399 2N6329 2N 6330 2N6331 A P1020 A P1021 A P1048 A P 1049 A P1050


    OCR Scan     		PDF 2N4398 2N4399 2N6329 2N6330 2N6331 AP1020 AP1021 AP1048 AP1049 AP1124 AP1050

    AP1020

    Abstract: 2N4398 2N4399 2N6329 2N6330 2N6331 AP1021 AP1048 AP1049 AP1050
    Text: 0043592 A P I A P I ELECTRONICS ELECTRONICS INC INC 26C 0 0 2 3 8 ' Sb D yZ-SS-TX DE | OOMBSTS 3 C O L L E C T O R C U R R E N T = 3 0 A M PS P N P T Y P E S D e v ic e No C a se 2N4398 2N4399 2N6329 2N 6330 2N6331 A P1020 A P1021 A P1048 A P 1049 A P1050


    OCR Scan     		PDF 2N4398 2N4399 2N6329 2N6330 2N6331 AP1020 AP1021 AP1048 AP1049 AP1124 AP1050

    5305da

    Abstract: 5305d 2N6329 2N6330 2n6331
    Text: T Y P E S 2N6329, 2N6330, 2N6331 P-N -P S IN G L E -D IF F U S E D M ES A SILICON P O W ER T R A N S IS T O R S IB H C -< FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH 2N6326, 2N6327, 2N6328 • 200 W at 25° C Case Temperature


    OCR Scan     		PDF 2N6329, 2N6330, 2N6331 2N6326, 2N6327, 2N6328 200-mJ 2N6329 2N6330 2N6331 5305da 5305d

    1501-33

    Abstract: 2N5686 2N5860 2N5745 45020 2N5301 2N5303 2N5880 2N5881 2N5882
    Text: Typ#* PNP Compls- VCEUSIM lc mont Voltt) M u 2N5881 2N5882 2NS879 2NS880 2N5301 2NS302 2N5303 2N5885 2N5886 2N6326 2N6327 2N632B MJ802 MJ3771 MJ3772 2N4398 2N4399 2N5745 2N5883 2N5884 2H6329 2N6330 2N6331 2N5685 2N5686 MJ14000 MJ14002 2N5683 2N5684 MJ14001


    OCR Scan     		PDF Tc-25Â 2N5881 2N5882 2NS879 2N5880 2N5301 2NS302 2N5303 2N5885 2N5886 1501-33 2N5686 2N5860 2N5745 45020

    2N4398

    Abstract: 2N4399 2N6329 2N6330 2N6331 AP1020 AP1021 AP1048 AP1049 AP1050
    Text: COLLECTOR CURRENT = 30 AMPS PNP TYPES Device No Case 2N4398 2N4399 2N6329 2N6330 2N6331 AP1020 AP1021 AP1048 AP1049 AP1050 AP1063 AP1071 AP1095 AP1096 AP1113 TO -3 TO-3 TO-3 TO -3 TO-3 TO-3 TO-63 TO-63 TO-3 T O -63 TO-63 TO-3 TO-63 TO-3 TO 61/1 TO-63 TO-3


    OCR Scan     		PDF 2N4398 2N4399 2N6329 2N6330 2N6331 AP1020 AP1021 AP1048 AP1049 AP1050

    2N6331

    Abstract: 2N6330 2N6326 2N6327 2N6328 2N6329 2n6328 texas instruments transistor 2N 3792 PC15A LW 2411
    Text: T Y P E S 2 N 6 3 2 9 , 2N6330, 2N6331 P - N - P S I N G L E - D I F F U S E D M E S A S IL IC O N P O W E R T R A N S I S T O R S FOR POWEFI-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH 2N6326, 2N6327, 2N6328 • 200 W at 25°C Case Temperature


    OCR Scan     		PDF 2N6329, 2N6330, 2N6331 2N6326, 2N6327, 2N6328 200-mJ 2M6329 2N6330 2N6331 2N6326 2N6327 2N6328 2N6329 2n6328 texas instruments transistor 2N 3792 PC15A LW 2411

    23741

    Abstract: PPC 2n5683 JANTX2N6379 JANTX2N6437
    Text: Micmsemi PNP Transistors Part Number 2N6609 2N5879 2N5880 2N5678 2N5958 2N5960 2N6029 , 2N6030 2N6031 2N5745 2N5883 2N5884 2N6436 2N6437 JAN2N6437 JANTX2N6437 JANTXV2N6437 2N6436 JAN2N6438 JANTX2N6438 JANTXV2N6438 2N4398 2N4399 2N6329 2N6330 2N6331 2N5967


    OCR Scan     		PDF PNP-11 23741 PPC 2n5683 JANTX2N6379 JANTX2N6437

    2N6322

    Abstract: 2N6324
    Text: AULIJj i I A I L D L V K L ^ INC • 'Ï IS i | a 3 t t o i i ise 2N6322 AND 2N6324 30 AMP NPN HIGH VOLTAGE/HIGH ENERGY 200 VOLTS T H E C O L L E C T O R 18 IN E L E C T R IC A L C O N T A C T W ITH T H E C A SE A L L J E D E C TO-63 DIM EN SIO N S r “


    OCR Scan     		PDF 2N6322 2N6324 Tc-25 Box577.

    2N6127

    Abstract: 2N6328 TEXAS INSTRUMENTS 2N6328 1N914 2N6326 2N6327 TRI15 526529
    Text: T\ yPES 2MS32S. 2N6327, 2N6328 N-P-H SILICON POWER TRANSISTORS P A R A M E T E R M E A S U R E M E N T IN FO R M A T IO N V O LTAG E W AVEFO RM S T E S T C IR C U IT NOTES. A B. V ge The is a —3 0 v o u is e V 3er, w a v e t o r m du tv c v c Dm 0 V in t o a 5 0 - i l t e r m i n a t i o n .


    OCR Scan     		PDF 2N6327, 2N6328 1N914 2N6127 2N6328 TEXAS INSTRUMENTS 2N6326 2N6327 TRI15 526529

    "PNP Transistor"

    Abstract: 2N6329
    Text: PNP Transistor D ivisio n Law rence M il- S p e c none S h ip p in g (none) Package 2N6329 (#23928) O u a l D ata (none) Absolute M axim um Ratings Symbol Max P o w e r D issipatio n Pow er 200 W 30 A 60 V 60 V 5 V C o lle c to r C u rre n t *c B r e a k d o w n V o l t a g e C o lle c to r-to -B a s e


    OCR Scan     		PDF 2N6329 300ps "PNP Transistor" 2N6329