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    2N646 Price and Stock

    Central Semiconductor Corp 2N6467

    TRANS 100V 4A TO66
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    Central Semiconductor Corp 2N6468

    TRANS 120V 4A TO66
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    Central Semiconductor Corp 2N6468 TIN/LEAD

    Transistor GP BJT PNP 120V 2-Pin TO-66 Sleeve (Alt: 2N6468 TIN/LEAD)
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    Central Semiconductor Corp 2N6465 TIN/LEAD

    Transistor GP BJT NPN 100V 2-Pin TO-66 Sleeve (Alt: 2N6465 TIN/LEAD)
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    Central Semiconductor Corp 2N6466 TIN/LEAD

    Transistor GP BJT NPN 120V 2-Pin TO-66 Sleeve (Alt: 2N6466 TIN/LEAD)
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    2N646 Datasheets (116)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N646 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N646 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N646 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N646 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N646 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N646 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2N646 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N6460 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6460 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6460 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6460 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6460 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N6460 Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    2N6461 Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=300 / Ic=0.1 / Hfe=30-120 / fT(Hz)=200M / Pwr(W)=1 Original PDF
    2N6461 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6461 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6461 Unknown Transistor Replacements Scan PDF
    2N6461 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6461 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6461 Unknown Semiconductor Master Cross Reference Guide Scan PDF

    2N646 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N6465

    Abstract: npn 100v 1.5a 2N6466 2N6467 2N6468 2N646 v130100
    Text: Inchange Semiconductor Product Specification 2N6465 2N6466 Silicon NPN Power Transistors DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Complement to type 2N6467 2N6468 APPLICATIONS ・For use in audio amplifier applications PINNING see Fig.2


    Original     		2N6465 2N6466 2N6467 2N6468 2N6465 npn 100v 1.5a 2N6466 2N6468 2N646 v130100 PDF

    2N6465

    Abstract: No abstract text available
    Text: 2N6465 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


    Original     		2N6465 O213AA) 1-Aug-02 2N6465 PDF

    2N6463

    Abstract: No abstract text available
    Text: 2N6463 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 250V 0.41 (0.016)


    Original     		2N6463 O205AD) 10/20m 1-Aug-02 2N6463 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6463 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 250V 0.41 (0.016)


    Original     		2N6463 O205AD) 10/20m 19-Jun-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6462 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 300V 0.41 (0.016)


    Original     		2N6462 O205AD) 10/20m 19-Jun-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6467 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a


    Original     		2N6467 O213AA) 30-Jul-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6463 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)250 V(BR)CBO (V)250 I(C) Max. (A)100m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)150 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)20m


    Original     		2N6463 Freq70M PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6464 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)250 V(BR)CBO (V)250 I(C) Max. (A)100m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)150 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)20m


    Original     		2N6464 Freq70M PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6461 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300 V(BR)CBO (V)300 I(C) Max. (A)100m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)200 V(CE)sat Max. (V)1.1 @I(C) (A) (Test Condition)20m


    Original     		2N6461 Freq70M PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N646 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)25 I(C) Max. (A)50m Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC)85þ I(CBO) Max. (A)14u @V(CBO) (V) (Test Condition)25 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		2N646 PDF

    2N6468

    Abstract: No abstract text available
    Text: 2N6468 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a


    Original     		2N6468 O213AA) 1-Aug-02 2N6468 PDF

    to66

    Abstract: 2N6467
    Text: 2N6467 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a


    Original     		2N6467 O213AA) 1-Aug-02 to66 2N6467 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6469 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)50 I(C) Max. (A)15 Absolute Max. Power Diss. (W)71# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m° @V(CBO) (V) (Test Condition)20 V(CE)sat Max. (V)3.5 @I(C) (A) (Test Condition)15


    Original     		2N6469 Freq10M PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6466 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)130 I(C) Max. (A)4.0 Absolute Max. Power Diss. (W)23 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m° @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)3.0 @I(C) (A) (Test Condition)4.0


    Original     		2N6466 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6462 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300 V(BR)CBO (V)300 I(C) Max. (A)100m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)200 V(CE)sat Max. (V)1.1 @I(C) (A) (Test Condition)20m


    Original     		2N6462 Freq70M PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6465 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


    Original     		2N6465 O213AA) 30-Jul-02 PDF

    2N6469

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2N6469 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·Excellent safe operating area ·High gain at high current APPLICATIONS ·General-purpose of switching and


    Original     		2N6469 2N6469 PDF

    2N6469

    Abstract: No abstract text available
    Text: 2N6469 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		2N6469 O204AA) 31-Jul-02 2N6469 PDF

    2N6464

    Abstract: No abstract text available
    Text: 2N6464 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 250V 0.41 (0.016)


    Original     		2N6464 O205AD) 10/20m 1-Aug-02 2N6464 PDF

    TA8724

    Abstract: 2N6248 transistor 2n6246 2N6469
    Text: 2N6246, 2N6247, 2N6248, 2N6469 H A RR IS S E M I C O N D S E C T O R File N u m b e r SbE D 677 I 430 2 57 1 0 0 4 0 5 2 0 3T3 « H A S Silicon P-N-P Epitaxiai-Base, High-Power Transistors TERMINAL DESIGNATIONS General-Purpose Types of Switching and Linear-Amplifier Applications


    OCR Scan     		2N6246, 2N6247, 2N6248, 2N6469 O-204AA 2N6246 2N6469 P-6019 TA8724 2N6248 transistor 2n6246 PDF

    40411 transistor

    Abstract: transistor 40411 TO-59 Package npn 40411 sdn6253 2N6571 SDN6251 2NXXXX MJ480 jedec Package TO-39
    Text: 880 0 0 79 8 8 2 5 4 0 2 2 S IL IC O N TRANSISTOR CORP. NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued flö Polarity lc Max Amps 2N6465 2N6466 2N6468 2N6469 2N6470 NPN NPN PNP PNP NPN 4.0 4.0 4.0 15.0 15.0 110 130 130 50 50 TO-66 TO-66 TO-66


    OCR Scan     		2N6465 2N6466 2N6468 2N6469 2N6470 2N6471 2N6472 2N6495 2N6496 2N6500 40411 transistor transistor 40411 TO-59 Package npn 40411 sdn6253 2N6571 SDN6251 2NXXXX MJ480 jedec Package TO-39 PDF

    2n6462

    Abstract: 2N6461
    Text: TYPES 2N6461 THRU 2N6464 N-P-N SILICON TRANSISTORS B U L L E T IN NO. D L S 7312012, M A Y 1973 H IG H -V O L T A G E 10-WATT T R A N S IS T O R S FO R G E N E R A L PURPOSE A M P L IF IE R A P P L IC A T IO N S IN L IN E -O P E R A T E D C IR C U IT S •


    OCR Scan     		2N6461 2N6464 10-WATT 2n6462 PDF

    FA 23843

    Abstract: 23843 23842 IC 23842 FA2384323843 23921 2N6246 23919
    Text: Micmsemi PNP Transistors Part Number PNP 2N5312 2N586S 2N5677 2N5737 2N5316 2N5318 2NS738 2N5314 2NS872 2N6318 2N5007 2N5009 2N6594 2N5741 2N5742 2N5871 2N6317 2N5853 2N7369 2N5621 2N5623 2N5625 2N5290 2N5291 2N5627 2N6127 2N6246 2N6469 2N6247 2N6248 2N6226


    OCR Scan     		O-254 PNP-10 FA 23843 23843 23842 IC 23842 FA2384323843 23921 2N6246 23919 PDF

    2N6468

    Abstract: TA8709
    Text: File N um ber HARRIS 888 SENICOND 2N6467, 2N6468 SECTOR SLE T> Silicon P-N-P Medium-Power Transistors 4302571 0 0 4 0 S57 M'ÎS M Ê H A S TERMINAL DESIGNATIONS General-Purpose Types for Switching Application Features: • Low saturation voltages ■ Maximum-safe-area-of-operation curves


    OCR Scan     		2N6467, 2N6468 O-213AA TA8710, TA8709, 2N6467 2N6468 2N6468. TA8709 PDF