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    Advanced Semiconductor Inc 2N6578

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    Bristol Electronics 2N6578 24 1
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    Quest Components 2N6578 19
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    RCA 2N6578

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    Solid State Devices Inc (SSDI) 2N6578

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    Motorola Semiconductor Products 2N6578

    Bipolar Junction Transistor, Darlington, NPN Type, TO-3
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    Quest Components 2N6578 92
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    2N6578 10
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    2N6578 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N6578 Central Semiconductor NPN Silicon Power Darlington Transistor Original PDF
    2N6578 Motorola Bipolar Transistor, NPN Silicon Power Darlington Transistor - Pol=NPN / Pkg=TO3 / Vceo=120 / Ic=15 / Hfe=500-5k / fT(Hz)=200M / Pwr(W)=120 Original PDF
    2N6578 On Semiconductor TRANS DARLINGTON NPN 120V 15A 3TO-3 - Pol=NPN / Pkg=TO3 / Vceo=120 / Ic=15 / Hfe=500-5k / fT(Hz)=200M / Pwr(W)=120 Original PDF
    2N6578 Semelab NPN Bipolar Power Darlington Transistor - Pol=NPN / Pkg=TO3 / Vceo=120 / Ic=15 / Hfe=500-5k / fT(Hz)=200M / Pwr(W)=120 Original PDF
    2N6578 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N6578 Central Semiconductor POWER DARLINGTON TRANSISTORS (METAL) Scan PDF
    2N6578 Central Semiconductor BJT, NPN, Power Transistor, IC 15A - Pol=NPN / Pkg=TO3 / Vceo=120 / Ic=15 / Hfe=500-5k / fT(Hz)=200M / Pwr(W)=120 Scan PDF
    2N6578 General Electric 15 A N-P-N darlington power transistor. 120 V. 120 W. Gain of 2000 at 4 A. - Pol=NPN / Pkg=TO3 / Vceo=120 / Ic=15 / Hfe=500-5k / fT(Hz)=200M / Pwr(W)=120 Scan PDF
    2N6578 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N6578 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6578 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N6578 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6578 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6578 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6578 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6578 Unknown Transistor Replacements Scan PDF
    2N6578 Unknown Transistor Replacements Scan PDF
    2N6578 Unknown Transistor Replacements Scan PDF
    2N6578 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    2N6578 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N6576 2N6577 2N6578 SILICON NPN DARLINGTON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6576, 2N6577, and 2N6578 are silicon NPN Darlington power transistors designed for general purpose switching applications.


    Original     		PDF 2N6576 2N6577 2N6578 2N6576, 2N6577, 2N6578 100mA

    2N6576

    Abstract: 2N6578 2N6577 darlington npn 90v
    Text: Inchange Semiconductor Product Specification 2N6576 2N6577 2N6578 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・DARLINGTON ・High DC current gain APPLICATIONS ・Power switching ・Audio amplifiers ・Hammer drivers ・Series and shunt regulators


    Original     		PDF 2N6576 2N6577 2N6578 2N6576 2N6577 2N6578 darlington npn 90v

    2N3055

    Abstract: NPN Transistor 2N3055 darlington 2N6576 2N6577 2N6578
    Text: 2H6576 2H6577 2N6578 I NPN SILICON POWER DARLINGTON General-purpose EpiBase for linear and switching Replacement for 2N3055 Popular Voltage transistors, suitable and Driver Performance Diode Protection Can Be Driven from Operating darl ington applications.


    Original     		PDF 2H6576 2H6577 2N6578 2N3055 2N3055 NPN Transistor 2N3055 darlington 2N6576 2N6577 2N6578

    Untitled

    Abstract: No abstract text available
    Text: 2N6578 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N6578 O204AA) 16-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: 2N6578 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N6578 O204AA) 18-Jun-02

    120v 10a transistor

    Abstract: transistor darlington package to.3 npn 120v 10a transistor 2N6578
    Text: 2N6578 MECHANICAL DATA Dimensions in mm inches NPN BIPOLAR POWER DARLINGTON TRANSISTOR 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675)


    Original     		PDF 2N6578 O-204AA) 100mA 120v 10a transistor transistor darlington package to.3 npn 120v 10a transistor 2N6578

    mje15033 replacement

    Abstract: BD262 DARLINGTON 2SB554 replacement 2sc1079 replacement 2SD323 2N6254 REPLACEMENT BD262A DARLINGTON MJ2955 replacement 2SC1013 replacement 2n3055 replacement
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6576 2N6577 2N6578 NPN Silicon Power Darlington Transistors General–purpose EpiBase power Darlington transistors, suitable for linear and switching applications. • • • • • • Replacement for 2N3055 and Driver


    Original     		PDF 2N3055 2N6576 2N6577 2N6578 TIP73B TIP74 TIP74A TIP74B TIP75 mje15033 replacement BD262 DARLINGTON 2SB554 replacement 2sc1079 replacement 2SD323 2N6254 REPLACEMENT BD262A DARLINGTON MJ2955 replacement 2SC1013 replacement 2n3055 replacement

    Untitled

    Abstract: No abstract text available
    Text: 2N6578 MECHANICAL DATA Dimensions in mm inches NPN BIPOLAR POWER DARLINGTON TRANSISTOR 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675)


    Original     		PDF 2N6578 O-204AA) 100mA

    NPN Transistor 2N3055 darlington

    Abstract: 2N3055 MOTOROLA 2N6576 2N3055* motorola 2N3055 2N6577 2N6578
    Text: MOTOROLA Order this document by 2N6576/D SEMICONDUCTOR TECHNICAL DATA 2N6576 2N6577 2N6578 NPN Silicon Power Darlington Transistors General–purpose EpiBase power Darlington transistors, suitable for linear and switching applications. • • • • •


    Original     		PDF 2N6576/D* 2N6576/D NPN Transistor 2N3055 darlington 2N3055 MOTOROLA 2N6576 2N3055* motorola 2N3055 2N6577 2N6578

    2N6576

    Abstract: 2N6578 2N6577 darlington npn 90v
    Text: SavantIC Semiconductor Product Specification 2N6576 2N6577 2N6578 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·DARLINGTON ·High DC current gain APPLICATIONS ·Power switching ·Audio amplifiers ·Hammer drivers ·Series and shunt regulators


    Original     		PDF 2N6576 2N6577 2N6578 2N6576 2N6577 2N6578 darlington npn 90v

    2N6576

    Abstract: 2N6578 darlington npn 90v 2N6577
    Text: JMnic Product Specification 2N6576 2N6577 2N6578 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・DARLINGTON ・High DC current gain APPLICATIONS ・Power switching ・Audio amplifiers ・Hammer drivers ・Series and shunt regulators PINNING


    Original     		PDF 2N6576 2N6577 2N6578 2N6576 2N6577 2N6578 darlington npn 90v

    2N6578

    Abstract: No abstract text available
    Text:          The ASI 2N6578 is Designed for General Purpose Amplifier and Switching Applications.      MAXIMUM RATINGS                 


    Original     		PDF 2N6578

    Untitled

    Abstract: No abstract text available
    Text: 2N6578 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N6578 O204AA) 31-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: 2N6578 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)120 I(C) Max. (A)15 Absolute Max. Power Diss. (W)87# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition)120 h(FE) Min. Current gain.500


    Original     		PDF 2N6578 Freq10M

    transistor mosfet buv18a

    Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
    Text: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9


    Original     		PDF

    HEP transistors

    Abstract: 2n6576 2N6578
    Text: File Number 2N6576, 2N6577, 2N6578 1152 15-Ampere N-P-N Darlington Power Transistors 60, 90, 120 Volts, 120 Watts Gain of 2000 at 4 A TERM INAL DESIGNATIONS Features: c • Operates from 1C without predriver ■ Low leakage at high temperature Applications:


    OCR Scan     		PDF 2N6576, 2N6577, 2N6578 15-Ampere 2751ft 2N6578 HEP transistors 2n6576

    2N6576

    Abstract: 2N6576 equivalent
    Text: File Number 1152 HARR IS S E M I C O N D S E CT OR 2N6576, 2N6577, 2N6578 5bE ]> • 43 D2 27 1 OD HG S^ l bS3 H H A S 15-Ampere N-P-N Darlington Power Transistors ~ F 3 3 'Z 9 60, 90, 120 Volts, 120 Watts Gain of 2000 at 4 A TERMINAL DESIGNATIONS Features:


    OCR Scan     		PDF 2N6576, 2N6577, 2N6578 15-Ampere O-204AA 2N6578 2N6576 2N6576 equivalent

    2N3055 NPN MOTOROLA POWER TRANSISTOR

    Abstract: NPN Transistor 2N3055 darlington 2n3055 motorola Motorola ic 2N6576 2N6577 2n6578
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6576 2N6577 2N6578 NPN Silicon Power Darlington TVansistors •Motorola P ry fy rtd Oovte« General-purpose EpiBase power Darlington transistors, suitable for linear and switching applications. • • • • • •


    OCR Scan     		PDF 2N3055 2N6576 2N6577 2N6578 2N3055 NPN MOTOROLA POWER TRANSISTOR NPN Transistor 2N3055 darlington 2n3055 motorola Motorola ic 2n6578

    2N6578

    Abstract: No abstract text available
    Text: 2N6578 m \\ SILICON NPN-DARLINGTON POWER TRANSISTOR DESCRIPTION: The ASI 2N6578 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE T O - 3 I.* ” I .1 35 MAXIMUM RATINGS 15 A lc V P diss 1.197 Tj -65 °C to +200 °C T -65 °C to +200 °C


    OCR Scan     		PDF 2N6578 2N6578

    2N6578

    Abstract: BM-500 2N6576 2N6577
    Text: Data Sheet 2N6576 2N6577 2N6578 Central Sem iconductor Corp. NPN SILICON POWER DARLINGTON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-3 CASE Manufacturers of World Class Discrete Semiconductors


    OCR Scan     		PDF 2n6576 2n6577 2n6578 2N6578 150mA 400mA 100mA BM-500

    transistor equivalenti

    Abstract: 2N6576 equivalent 2N6576 2N6577 2N6578 20000 watts audio power amplifier circuit diagram 2N6578 equivalent B-01 N9543 GD175B
    Text: Q l 3875081' G E "'SOLID d STATE F | “ 3 0 7 S D Ô 1 G O IT E S T 0 1 E ~1 7 2 5 9 ' 1 D T ' 5 ’3 ~2 - 1 Power Transistors File N u m b e r 1152 2N6576, 2N6577, 2N6578


    OCR Scan     		PDF 307SDÃ 2N6576, 2N6577, 2N6578 15-Ampere TQ-204AA 2N6578 transistor equivalenti 2N6576 equivalent 2N6576 2N6577 20000 watts audio power amplifier circuit diagram 2N6578 equivalent B-01 N9543 GD175B

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors TO-3 Case Continued TYPE NO. •c (A) NPN PNP Pd (W) bvceo (V) (V) hFE 8 lc »TYP (A) VCE(SAT) @ic (V) (A) MAX h *TYP (MHZ) MIN MIN MIN MAX 10 125 110 100 20 100 5.0 3.5 10 4.0 2N6249 10 175 300 200 10 50 10 1.5 10 2.5 2N6250 10 175 375


    OCR Scan     		PDF 2N6249 2N6250 2N6251 2N6253 2N6254 2N6248 2N6282 2N6285 2N6547 2N6576

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE TO-3 le MAX = 2-50A V c e o (sus) = 35-500V NPN Power Transistors PNP Type No. complement MJ1000 MJ900 MJ1001 MJ3001 MJ13014 MJ901 MJ2501 DARLINGTON yes yes yes yes MJ10012 MJ13015 MJ 13330 VCEO (sus) IC (max) (v) (A)


    OCR Scan     		PDF 5-500V MJ1000 MJ900 MJ1001 MJ3001 MJ13014 MJ901 MJ2501 MJ10012 MJ13015

    transistor buv18a

    Abstract: motorola transistor cross reference BUV18A BUX98A motorola N6030 BUT13 transistor buv10 MPSU06 transistor MJ12005 MOTOROLA MJ15021 "cross reference"
    Text: STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR COLLECTOR CONNECTED TO TAB Resistive Switching IcCont Amps Max VcEO sus) Volts Min 0.5 300 MPSU10 0.8 40 MPSU02 1 120 2 Device Type *s US Max tf US Max fT MHz Min P q (Case) Watts hFE Min/Max @ lc Amp MPSU60 30 min


    OCR Scan     		PDF MPSU10 MPSU02 MPSU03 MPSU04 MPSU01 MPSU01A MPSU45# MPSU60 MPSU52 MPSU51 transistor buv18a motorola transistor cross reference BUV18A BUX98A motorola N6030 BUT13 transistor buv10 MPSU06 transistor MJ12005 MOTOROLA MJ15021 "cross reference"