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    Microchip Technology Inc 2N6660

    MOSFET N-CH 60V 410MA TO39
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    Microchip Technology Inc 2N6661

    MOSFET N-CH 90V 350MA TO39
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    Vishay Siliconix 2N6660

    MOSFET N-CH 60V 990MA TO205AD
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    Vishay Siliconix 2N6661

    MOSFET N-CH 90V 860MA TO39
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    onsemi 2N6668

    POWER 8A 80V DARLINGTON PNP
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    2N666 Datasheets (174)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6660 Defense Supply Center Columbus N-Channel FET Original PDF
    2N6660 Microchip Technology Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 0.41A TO39-3 Original PDF
    2N6660 Motorola FET Transistor, N Channel Enhancment Mode TMOS Power Field Effect Transistor Original PDF
    2N6660 Unknown N-channel, High Frequency Power Transistor Original PDF
    2N6660 Philips Semiconductors N-Channel Vertical DMOS Transistor Original PDF
    2N6660 Supertex Metal oxide N-channel FET, Enhancement Type Original PDF
    2N6660 Supertex N-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    2N6660 Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors Original PDF
    2N6660 Vishay Telefunken TRANS MOSFET N-CH 60V 1.1A 3TO-205AD Original PDF
    2N6660 General Electric Power Transistor Data Book 1985 Scan PDF
    2N6660 Intersil Data Book 1981 Scan PDF
    2N6660 Motorola Switchmode Datasheet Scan PDF
    2N6660 Motorola European Master Selection Guide 1986 Scan PDF
    2N6660 Motorola TMOS SWITCHING FET TRANSISTORS Scan PDF
    2N6660 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N6660 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2N6660 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6660 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6660 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6660 Unknown FET Data Book Scan PDF
    ...

    2N666 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6660 JANTX

    Abstract: No abstract text available
    Text: 2N6660JAN/JANTX/JANTXV N-Channel Enhancement-Mode MOSFET Transistors Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 60 3 @ VGS = 10 V 0.8 to 2 0.99 Features Benefits Applications D D D D D D D D D D D D D Military Applications D Direct Logic-Level Interface: TTL/CMOS


    Original
    PDF 2N6660JAN/JANTX/JANTXV 2N6659/2N6660, VQ1004J/P VNDQ06 P-37515--Rev. 04-Jul-94 2N6660 JANTX

    2N6668

    Abstract: 2N6667 1N5825 2N6387 2N6388 MSD6100
    Text: ON Semiconductor 2N6667 2N6668 Darlington Silicon Power Transistors . . . designed for general–purpose amplifier and low speed switching applications. PNP SILICON DARLINGTON POWER TRANSISTORS 10 AMPERES 60–80 VOLTS 65 WATTS • High DC Current Gain —


    Original
    PDF 2N6667 2N6668 220AB 2N6387, 2N6388 r14525 2N6667/D 2N6668 2N6667 1N5825 2N6387 2N6388 MSD6100

    2N6661

    Abstract: VN88AFD
    Text: 2N6661/VN88AFD Vishay Siliconix N-Channel 80-V and 90-V D-S MOSFETS PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6661 90 4 @ VGS = 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGS = 10 V 0.8 to 2.5 1.29 FEATURES BENEFITS APPLICATIONS


    Original
    PDF 2N6661/VN88AFD 2N6661 VN88AFD 08-Apr-05 2N6661 VN88AFD

    2N6660

    Abstract: No abstract text available
    Text: 2N6660 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► ► The Supertex 2N6660 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original
    PDF 2N6660 2N6660 DSPD-3TO39N2, A070808. DSFP-2N6660 A072808

    2N6668

    Abstract: No abstract text available
    Text: 2N6668 SILICON PNP POWER DARLINGTON TRANSISTOR • ■ ■ STMicroelectronics PREFERRED SALESTYPE PNP DARLINGTON INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS: GENERAL PURPOSE SWITCHING ■ GENERAL PURPOSE SWITCHING AND AMPLIFIER ■ 3 1


    Original
    PDF 2N6668 O-220 2N6668

    TN2524

    Abstract: SOT-89 N2 2N6660 2N6661 2N7000 2N7002 2N7008 TN0104 TN0106 TN0110
    Text: Supertex inc. Selector Guide N-Channel Enhancement Mode MOSFETs BVDSS Device V RDS(ON) max ID(ON) min (Ω) CISS max (A) (pF) VGS(TH) max (V) Package Options Application Notes 2N6660 60 3.0 1.5 50 2.0 3-Lead TO-39 (N2) - 2N6661 90 4.0 1.5 50 2.0 3-Lead TO-39 (N2)


    Original
    PDF 2N6660 2N6661 2N7000 2N7002 OT-23 2N7008 TN0104 TN0106 TN0110 VN2406 TN2524 SOT-89 N2 2N6660 2N6661 2N7000 2N7002 2N7008 TN0104 TN0106 TN0110

    2N6660

    Abstract: LE17
    Text: N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6660 • VDSS = 60V , ID = 1.0A, RDS ON = 3.0Ω • • • Fast Switching Low Threshold Voltage (Logic Level) Low CISS • • • Integral Source-Drain Body Diode Hermetic Metal TO39 Package High Reliability Screening Options Available


    Original
    PDF 2N6660 725mW 25ent O-205AD) 2N6660 LE17

    2N6660CSM4

    Abstract: No abstract text available
    Text: 2N6660CSM4 MECHANICAL DATA Dimensions in mm inches N–CHANNEL ENHANCEMENT MODE MOS TRANSISTOR 1.40 ± 0.15 (0.055 ± 0.006) 5.59 ± 0.13 (0.22 ± 0.005) 0.23 rad. (0.009) 3 1.27 ± 0.05 (0.05 ± 0.002) 0.64 ± 0.08 (0.025 ± 0.003) 3.81 ± 0.13 (0.15 ± 0.005)


    Original
    PDF 2N6660CSM4 MO-041BA) 2N6660CSM4

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6661 • VDSS = 90V , ID = 0.9A, RDS ON = 4.01 • • • Fast Switching Low Threshold Voltage (Logic Level) Low CISS • • • Integral Source-Drain Body Diode Hermetic Metal TO39 Package High Reliability Screening Options Available


    Original
    PDF 2N6661 40mW/ment O-205AD)

    Untitled

    Abstract: No abstract text available
    Text: 2N6661JAN/JANTX/JANTXV N-Channel Enhancement-Mode MOSFET Transistors Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 90 4 @ VGS = 10 V 0.8 to 2 0.86 Features Benefits Applications D D D D D D D D D D D D D Military Applications D Direct Logic-Level Interface: TTL/CMOS


    Original
    PDF 2N6661JAN/JANTX/JANTXV 2N6661/VN88AFD VNDQ09 P-37515--Rev. 04-July-94

    Untitled

    Abstract: No abstract text available
    Text: 2N6661 MECHANICAL DATA Dimensions in mm inches 8.51 (0.34) 9.40 (0.37) N–CHANNEL ENHANCEMENT MODE MOS TRANSISTOR 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. FEATURES 5.08 (0.200)


    Original
    PDF 2N6661 O-205AD)

    Untitled

    Abstract: No abstract text available
    Text: 2N6660JAN/JANTX/JANTXV N-Channel Enhancement-Mode MOSFET Transistors Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 60 3 @ VGS = 10 V 0.8 to 2 0.99 Features Benefits Applications D D D D D D D D D D D D D Military Applications D Direct Logic-Level Interface: TTL/CMOS


    Original
    PDF 2N6660JAN/JANTX/JANTXV 2N6659/2N6660, VQ1004J/P VNDQ06 P-37515--Rev. 04-Jul-94

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6660 • VDSS = 60V , ID = 1.0A, RDS ON = 3.01 • • • Fast Switching Low Threshold Voltage (Logic Level) Low CISS • • • Integral Source-Drain Body Diode Hermetic Metal TO39 Package High Reliability Screening Options Available


    Original
    PDF 2N6660 40mW/ment O-205AD)

    2N6661

    Abstract: No abstract text available
    Text: SEME 2N6661 LAB MECHANICAL DATA Dimensions in mm inches N–CHANNEL ENHANCEMENT MODE MOS TRANSISTOR 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. FEATURES 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. • Switching Regulators


    Original
    PDF 2N6661 2N6661

    2N6668

    Abstract: No abstract text available
    Text: 2N6668 SILICON PNP POWER DARLINGTON TRANSISTOR • ■ ■ SGS-THOMSON PREFERRED SALESTYPE PNP DARLINGTON INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS: GENERAL PURPOSE SWITCHING ■ GENERAL PURPOSE SWITCHING AND AMPLIFIER ■ 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM


    Original
    PDF 2N6668 O-220 2N6668

    transistor t 2180

    Abstract: power ic 501 amp 2N6668
    Text: 2N6668 Darlington Power Transistor Plastic Medium-Power Silicon Transistors are designed for general-purpose amplifier and low speed switching applications. Features: • Collector-Emitter Sustaining Voltage VCEO sus = 80V (Minimum). • Collector-Emitter Saturation Voltage


    Original
    PDF 2N6668 transistor t 2180 power ic 501 amp 2N6668

    2N6660

    Abstract: 2N6661 MPF6660 2N6659 MPF6661 mps 0737 2N6660 MOTOROLA MOTOROLA TO205AD 2N6661 transistor MPS 0711
    Text: 2N6659 MPF6659 2N6660 MPF6660 2N6661 MPF6661 N-CHANNEL ENHANCEMENT-MODE TMOS POWER FIELD-EFFECT TRANSISTOR These TMOS Power FETs are designed. for high-current, highspeed power switching applications such as switching power supplies, ,CMOS logic, microprocessor or ~L-to-tiigh


    Original
    PDF 2N6659 MPF6659 2N6660 MPF6660 2N6661 MPF6661 2N66591MPF6659 2N6660/2N6661 MPF6660/MPF6661 O-205AD MPF6660 MPF6661 mps 0737 2N6660 MOTOROLA MOTOROLA TO205AD 2N6661 transistor MPS 0711

    2N6660

    Abstract: s0437 2N6660 siliconix VQ1004J
    Text: 2N6660, VQ1004J/P Vishay Siliconix N-Channel 60-V D-S Single and Quad MOSFETs PRODUCT SUMM ARY Part Number V (B R )D S S M i n ( V ) 2N6660 VQ1004J/P 60 r D S (o n) M a x ( Q ) V G S (th ) (V) I d (A) 3 @ V q s = 10 V 0.8 to 2 1.1 3.5 @ V qs = 10 V 0.8 to 2.5


    OCR Scan
    PDF 2N6660, VQ1004J/P 2N6660 VQ1004J/P S-04379-- 16-Jul-01 s0437 2N6660 siliconix VQ1004J

    Untitled

    Abstract: No abstract text available
    Text: -BTSSKte 2N6661 JANTX, JANTXV N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY _ TO-39 TO-205AD h O (V) (A) 90 4 0.86 V (B R )D S S BO TTO M VIEW •d 2 GATE 3 & C AS E-D R A IN ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)


    OCR Scan
    PDF 2N6661 O-205AD) MIL-S-19500/547A.

    2N6661

    Abstract: 2N6660 2N6661 transistor 2N6659 max 1988
    Text: MIE D m 2N6659 2N6660 2N6661 711Gfl2b □Q2t.7c 3 1 • P H I N PHILIPS INTERNATIONAL T-31'0& N-CHANNEL VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a TO-39 envelope and designed for application as low-power, high-frequency inverters and. line drivers.


    OCR Scan
    PDF 2N6659 2N6660 2N6661 2N6661 T-39-05 2N6661 transistor max 1988

    2N6155

    Abstract: BUZ23 SIEMENS siemens Ni 1000 4900 SIEMENS BUZ10 BUZ54 BUZ11 BUZ24 BSS92 BUZ64
    Text: - 314 - f M % tt € BSS92 6SS100 BSStOI SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS P N N BUZ6Û BUZ64 BUZZI BUZ72A BUZ73A BUZ74A BUZ76A BUZ80 8UZ211 2N6659 2N6660 2N6661 2N6TS5 2N67 56 f- + SIEMENS SIEMENS SIEMENS SIEMENS


    OCR Scan
    PDF SSS6N60 O-220 8SS89 BSS92 8SS100 O-220AB BUZ171 O-220ftB irf120 to-204aa 2N6155 BUZ23 SIEMENS siemens Ni 1000 4900 SIEMENS BUZ10 BUZ54 BUZ11 BUZ24 BUZ64

    4900 SIEMENS

    Abstract: 2N6155 BUZ211 BUZ54 SSS6N60 BUZ11 BUZ24 BUZ74A SIEMENS BSS92 BUZ41A
    Text: - 314 - f M % tt € BSS92 6SS100 BSStOI SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS P N N BUZ6Û BUZ64 BUZZI BUZ72A BUZ73A BUZ74A BUZ76A BUZ80 8UZ211 2N6659 2N6660 2N6661 2N6TS5 2N67 56 f- SIEMENS SIEMENS SIEMENS SIEMENS


    OCR Scan
    PDF SSS6N60 O-220 8SS89 BSS92 8SS100 T0-204AA 2N6659 O-205AF 2N6660 4900 SIEMENS 2N6155 BUZ211 BUZ54 BUZ11 BUZ24 BUZ74A SIEMENS BUZ41A

    MIL I 23659

    Abstract: 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2n3198 transistor transistor 24405
    Text: Microsemi PNP Transistors TIP42 TIP42A TIP42B TIP42C 2N6666 2N6667 2N6668 2N3171 2N3172 2N3173 2N3174 2N6049 2N3183 2N3195 2N3184 2N3196 2N3185 2N3197 2N3186 2N3198 2N6040 2N6041 2N6042 2N6489 2N6490 2N6491 2N3163 2N3164 2N3165 2N3166 2N3175 2N3187 2N317B


    OCR Scan
    PDF O-220 T0-220 O-22C) MIL I 23659 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2n3198 transistor transistor 24405

    Untitled

    Abstract: No abstract text available
    Text: m 2N6660 \ \ MOS N-CHANNEL TRANSISTOR DESCRIPTION: The 2N6660 is an N-Channel Enhancement-Mode MOS Transistor for General Purpose Switching Applications. MAXIMUM RATINGS A @ Tc = 25 °C 800 m A @ T c = 100 °C VDs= 60 V VGS = ±20 V 6.25 W @ 25 °C 2.5 W @ 100 °C


    OCR Scan
    PDF 2N6660 2N6660