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    2N675 Price and Stock

    Microchip Technology Inc 2N6756

    MOSFET N-CH 100V 14A TO204AA
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    Microchip Technology Inc 2N6758

    MOSFET N-CH 200V 9A TO204AA
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    Microchip Technology Inc JAN2N6756

    MOSFET N-CH 100V 14A TO204AA
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    Microchip Technology Inc JANTX2N6758

    MOSFET N-CH 200V 9A TO204AA
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    Microchip Technology Inc JANTX2N6756

    MOSFET N-CH 100V 14A TO204AA
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    2N675 Datasheets (150)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N675 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N675 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N675 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N675 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N675 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6751 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=400 / Ic=10 / Hfe=8min / fT(Hz)=15M / Pwr(W)=75 Original PDF
    2N6751 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    2N6751 General Electric 5 A SwitchMax power transistor. High voltage N-P-N type. - Pol=NPN / Pkg=TO3 / Vceo=400 / Ic=10 / Hfe=8min / fT(Hz)=15M / Pwr(W)=75 Scan PDF
    2N6751 General Electric High Voltage Bipolar Power Transistors Scan PDF
    2N6751 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6751 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6751 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6751 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6751 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6751 Semelab Bipolar Transistors (CECC and High Rel) & High Energy Scan PDF
    2N6751 Semiconductor Technology NPN & PNP High Voltage Silicon High Power Transistors Scan PDF
    2N6752 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=450 / Ic=10 / Hfe=8min / fT(Hz)=15M / Pwr(W)=75 Original PDF
    2N6752 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    2N6752 General Electric 5 A SwitchMax power transistor. High voltage N-P-N type. - Pol=NPN / Pkg=TO3 / Vceo=450 / Ic=10 / Hfe=8min / fT(Hz)=15M / Pwr(W)=75 Scan PDF
    2N6752 General Electric High Voltage Bipolar Power Transistors Scan PDF
    ...

    2N675 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6751

    Abstract: npn 10a 800v 2N6752
    Text: Inchange Semiconductor Product Specification 2N6751 2N6752 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage ·Low saturation voltage ·Fast switching speed APPLICATIONS ·Off-line power supplies ·High-voltage inverters


    Original     		PDF 2N6751 2N6752 2N6751 npn 10a 800v 2N6752

    2N6751

    Abstract: No abstract text available
    Text: 2N6751 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N6751 O204AA) 31-Jul-02 2N6751

    2N6754

    Abstract: No abstract text available
    Text: 2N6754 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N6754 O204AA) 31-Jul-02 2N6754

    2N6753

    Abstract: No abstract text available
    Text: 2N6753 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N6753 O204AA) 31-Jul-02 2N6753

    DD 127 D TRANSISTOR

    Abstract: transistor DD 127 D 2N6758 JANTXV 2N6758 2N6762 JANTX 2N6762 2N6760 JANTX 121465 2n6760
    Text: 2N6756, 2N6758, 2N6760 and 2N6762 Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/542 DESCRIPTION This family of 2N6756, 2N6758, 2N6760 and 2N6762 switching transistors are military qualified up to the JANTXV level for high-reliability applications. Microsemi also offers


    Original     		PDF 2N6756, 2N6758, 2N6760 2N6762 MIL-PRF-19500/542 2N6762 DD 127 D TRANSISTOR transistor DD 127 D 2N6758 JANTXV 2N6758 2N6762 JANTX 2N6760 JANTX 121465

    Untitled

    Abstract: No abstract text available
    Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N6753 Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEO(sus)= 500(Min.) • High Switching Speed • Low Collector Saturation Voltage


    Original     		PDF 2N6753

    Untitled

    Abstract: No abstract text available
    Text: , One. J. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N6752 Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEO(sus)= 450(Min.) • High Switching Speed


    Original     		PDF 2N6752 100-C

    Untitled

    Abstract: No abstract text available
    Text: 2N6751 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N6751 O204AA) 16-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: 2N6753 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N6753 O204AA) 18-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: , Una. J x TELEPHONE: (973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 2N6751 Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEO(sus)= 400(Min.) • High Switching Speed


    Original     		PDF 2N6751

    2N6752

    Abstract: No abstract text available
    Text: 2N6752 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N6752 O204AA) 31-Jul-02 2N6752

    2N6756

    Abstract: TB334
    Text: 2N6756 Data Sheet March 1999 14A, 100V, 0.180 Ohm, N-Channel Power MOSFET • 14A, 100V • rDS ON = 0.180Ω Ordering Information • Majority Carrier Device 2N6756 PACKAGE TO-204AA 1586.2 Features The 2N6756 is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications


    Original     		PDF 2N6756 2N6756 O-204AA TB334

    2N6751

    Abstract: npn 10a 800v 2N6752
    Text: SavantIC Semiconductor Product Specification 2N6751 2N6752 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage ·Low saturation voltage ·Fast switching speed APPLICATIONS ·Off-line power supplies ·High-voltage inverters


    Original     		PDF 2N6751 2N6752 2N6751 npn 10a 800v 2N6752

    2N6754

    Abstract: 2N6753
    Text: SavantIC Semiconductor Product Specification 2N6753 2N6754 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage ·Low saturation voltage ·Fast switching speed APPLICATIONS ·Off-line power supplies ·High-voltage inverters


    Original     		PDF 2N6753 2N6754 2N6753 2N6754

    2N6758

    Abstract: 2n677 2N67 2N6756 2N6757 30saa zn675
    Text: Standard Power MOSFETs 2N6757, 2N6758 File Number 1587 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 8A and 9A, 1 5 0 V -2 0 0 V rDs on = 0.4 Q and 0.6 O Features: • SOA is pow er-dissipation lim ited


    OCR Scan     		PDF 2N6757, 2N6758 50V-200V 2N6757 2N6758 ZN6758 2n677 2N67 2N6756 30saa zn675

    2N6756

    Abstract: 2N6755 F102 ISQ0020F
    Text: DE I 3 4 t.Ttz.V4 DD2771G Q ~ f A4 3469674 FAIRCHILD SEMICONDUCTOR 84 D 2 7790 2N6755/2N6756 T - 3 ? - / / N-Channel Power MOSFETs, 14 A, 60 V/100 V FA IR C H ILD A Schlumberger Company Power And Discrete Division Description TO-2Q4AA These devices are n-channel, enhancement mode, power


    OCR Scan     		PDF 34hcib7M 2N6755/2N6756 2N67S6 2N6755 clb74 E77T4 T-39-11 2N6756 F102 ISQ0020F

    2N6756 JAN

    Abstract: 2N6755
    Text: POWER MOSFET TRANSISTORS , ,TX JTXVIñl?!! J, JTX, JTXV 2N6756 100 Volt, 0.18 Ohm N-Channel DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Roaom and a high transconductance.


    OCR Scan     		PDF 2N6756 MIL-S-19500/542A contro17) 2N6755 2N6756 JAN

    1A31E

    Abstract: 2N6759 2N6760
    Text: 3 8 7 5081 G E SOL ID S T A T E 01 DE | 3fi7SDfll □ □ 1 0 3 *1 5 a r ° • , T ' 3 9 ’ 11 _ Standard Power MOSFETs 2N6759, 2N6760 File Number 1588 N-Channel Enhancement-Mode Poyver Field-Effect Transistors 4.5A and 5.5A, 350V - 400V rDs on = 1.0 fi and 1.5 Q


    OCR Scan     		PDF 1A31E T-39-11 2N6759, 2N6760 2N6759 2N6760 2N6/60 1A31E

    MTP20N10

    Abstract: 1RF531
    Text: NATL N-Channel Power MOSFETs Continued 2N67S5 2N6756 IRF130 IRF132 IRF133 IRF530 S 1-6 IRF532 IRF533 MTP20N10 2N6757 IRF230 IRF231 lD @ TC = 25 'C (A) •rD Tc = 100-C (A) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-2Û4AA (42) TO-204AA


    OCR Scan     		PDF 2N67S5 2N6756 IRF130 IRF131 IRF132 IRF133 IRF530 1RF531 IRF532 IRF533 MTP20N10

    2N6758

    Abstract: UPS RELAY CIRCUIT 2N6757 DDE7715
    Text: 64 d F J 3 Li b cît.74 3469674 FAIRCHILD SEMICONDUCTOR «h 0 D 57 7T S 1 84D 27795 2N6757/2N6758 N-Channel Power MOSFETs, 9 A, 150 V/200 V F A IR C H IL D A Schlumberger Company Power And Discrete Division T-39-11 TO-2Q4AA Description These devices are n-channel, enhancement mode, power


    OCR Scan     		PDF DDE7715 2N6757/2N6758 T-39-11 2N6758 2N675 UPS RELAY CIRCUIT 2N6757

    2N6760

    Abstract: 2N6898 2N67 2N6759
    Text: Standard Power M O SFETs 2N6759, 2N6760 File Number 1588 N-Channel Enhancement-Mode Power Field-Effect Transistors T E R M IN A L D IA G R A M 4.5A and 5.5A, 350V - 400V rDs on = 1.0 Q and 1.5 Q o 9 Features: • SOA is pow er-dissipation lim ited ■ N anosecond sw itching speeds


    OCR Scan     		PDF 2N6759, 2N6760 2N6759 2N6760 TQ-204AA 2N6796 O-2I35AF O-205AF 2N6800 2N6898 2N67

    2N6760

    Abstract: MF2400 2N6759 E7A04
    Text: ñ4 3469674 FAIRCHILD SEMICONDUCTOR uni n i dËT| 3 4 b T t , 7 4 □ □ 2 7 A D D 84D 27800 D 2N6759/2N6760 N-Channel Power MOSFETs, 5.5 A, 350 V/400 V F a ir c h ild A Schlum berger Com pany _ Power And Discrete Division D escription These devices are n-channel, enhancement mode, power


    OCR Scan     		PDF 34tTb74 2N6759/2N6760 T-39-11 2N6759 2N6760 2N6760 E7A04 MF2400

    2N6758

    Abstract: 6757
    Text: UNITRODE CORP 9347963 t UNITRODE CORP ~~~ 92D POWER MOSFET TRANSISTORS 2 0 0 V o lt, 0 .4 o o i c mt , s 1 04 96 D j ; j t x , j t x v 2N6758 T - ' b l - i i O h m N -C h a n n e l " DESCRIPTION The Unltrode power MOSFET design utilizes the most advanced technology available.


    OCR Scan     		PDF 2N6758 1L-S-19500/542A 2N6758 6757

    Untitled

    Abstract: No abstract text available
    Text: 2N6751, 2N6752, 2N6753, 2N6754 HARRIS SEMICOND SECTOR File N u m be r SbE 1244 4302271 0040b44 71fi H H A S 5-A S w itc h M a ji Power Transistors • 7 = 3 5 -/? TERMINAL DESIGNATIONS High-Voltage N-P-N Types for 240 V Off-Line Power Supplies and Other High-Voltage


    OCR Scan     		PDF 2N6751, 2N6752, 2N6753, 2N6754 0040b44 O-204AA 2N6752 2N6754