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    2N6758 JANTX Search Results

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    2N6758 JANTX Price and Stock

    Harris Semiconductor JANTX2N6758

    TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,9A I(D),TO-3 (Also Known As: 2N6758/JANTX)
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    Quest Components JANTX2N6758 62
    • 1 $40
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    JANTX2N6758 7
    • 1 $26
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    JANTX2N6758 4
    • 1 $13.65
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    International Rectifier JANTX2N6758

    TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,9A I(D),TO-3 (Also Known As: 2N6758/JANTX)
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    Quest Components JANTX2N6758 47
    • 1 $26
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    JANTX2N6758 8
    • 1 $19.5
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    JANTX2N6758 2
    • 1 $40
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    JANTX2N6758 1
    • 1 $38.7296
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    Others JANTX2N6758

    TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,9A I(D),TO-3 (Also Known As: 2N6758/JANTX)
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    Quest Components JANTX2N6758 4
    • 1 $38.7296
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    JANTX2N6758 4
    • 1 $38.7296
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    Intersil Corporation JANTX2N6758

    TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,9A I(D),TO-3 (Also Known As: 2N6758/JANTX)
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    Quest Components JANTX2N6758 2
    • 1 $26
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    CRC Industries UK Limited JANTX2N6758

    TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,9A I(D),TO-3 (Also Known As: 2N6758/JANTX)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components JANTX2N6758 1
    • 1 $38.7296
    • 10 $38.7296
    • 100 $38.7296
    • 1000 $38.7296
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    JANTX2N6758 1
    • 1 $38.7296
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    2N6758 JANTX Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    DD 127 D TRANSISTOR

    Abstract: transistor DD 127 D 2N6758 JANTXV 2N6758 2N6762 JANTX 2N6762 2N6760 JANTX 121465 2n6760
    Text: 2N6756, 2N6758, 2N6760 and 2N6762 Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/542 DESCRIPTION This family of 2N6756, 2N6758, 2N6760 and 2N6762 switching transistors are military qualified up to the JANTXV level for high-reliability applications. Microsemi also offers


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    2N6756, 2N6758, 2N6760 2N6762 MIL-PRF-19500/542 2N6762 DD 127 D TRANSISTOR transistor DD 127 D 2N6758 JANTXV 2N6758 2N6762 JANTX 2N6760 JANTX 121465 PDF

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/542 DEVICES LEVELS 2N6758 JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)


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    MIL-PRF-19500/542 2N6758 O-204AA) T4-LDS-0112 PDF

    2N6758 equivalent

    Abstract: 2N6758
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/542 DEVICES LEVELS 2N6758 JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)


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    MIL-PRF-19500/542 2N6758 O-204AA) T4-LDS-0112 2N6758 equivalent 2N6758 PDF

    2N6758

    Abstract: No abstract text available
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/542 DEVICES LEVELS 2N6758 JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)


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    MIL-PRF-19500/542 2N6758 O-204AA) T4-LDS-0112 2N6758 PDF

    2N6760 equivalent

    Abstract: 2N6758 equivalent 2N6756 2N6758 2N6760 2N6762 IRF130 IRF230 Transistor irf230 104-2 substitution
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 26 July 2010. MIL-PRF-19500/542H 26 April 2010 SUPERSEDING MIL-PRF-19500/542G 8 September 2003 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL,


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    MIL-PRF-19500/542H MIL-PRF-19500/542G 2N6756, 2N6758, 2N6760, 2N6762, MIL-PRF-19500. 2N6760 equivalent 2N6758 equivalent 2N6756 2N6758 2N6760 2N6762 IRF130 IRF230 Transistor irf230 104-2 substitution PDF

    2N6756

    Abstract: 2N6758 2N6760 2N6762 JANHCA6756 MOSFET IRF230
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 August 1998 INCH-POUND MIL-PRF-19500/542F 20 April 1998 SUPERSEDING MIL-S-19500/542E 17 August 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL,


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    MIL-PRF-19500/542F MIL-S-19500/542E 2N6756, 2N6758, 2N6760, 2N6762, 2N6756 2N6758 2N6760 2N6762 JANHCA6756 MOSFET IRF230 PDF

    2N6782 JANTX

    Abstract: 2N6758 JANTX 2N6756 JANTX 2N6766 JANTX 2N6792 JANTX 2N6796U 60022 2N7236 2n6806 jantx 2N6770 JANTX
    Text: Government / Space Products Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Document # Pages Date IRH7054 90883 5 Oct-96 IRH7150 90677 13 Oct-96 IRH7250 90697 13 Oct-96 IRH7450SE


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    IRH7054 Oct-96 IRH7150 IRH7250 IRH7450SE Nov-96 IRH8054 2N6782 JANTX 2N6758 JANTX 2N6756 JANTX 2N6766 JANTX 2N6792 JANTX 2N6796U 60022 2N7236 2n6806 jantx 2N6770 JANTX PDF

    laser range finder schematics

    Abstract: schematic satellite finder thyristor cdi Notebook lcd inverter schematic PNP SILICON TRANSISTORS MIL GRADE JANTXV 2N5666 1n5819 trr MICROSEMI 2N2907A scr firing circuit for dc servo driver cdi dc/dc
    Text: power conditioning More than solutions, enabling possibilities Discrete Semiconductors Powermite Products Power Schottkys/Rectifiers MOSFETs Bipolar Transistors Silicon Controlled Rectifiers Battery Bypass Circuits Switching Power and Conditioning Signals


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    PDF

    sy 710 diode

    Abstract: IC 6757 diode sy 710 2N6758 2N6757
    Text: POWER MOSFET TRANSISTORS , JTX 200 Volt, 0.4 Ohm N-Channel FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability • Qualified to M IL-S-19500/542A 2N6757 J' JTX' JTXV 2N6758 DESCRIPTION


    OCR Scan
    2N6757 2N6758 IL-S-19500/542A 2N6757 sy 710 diode IC 6757 diode sy 710 2N6758 PDF

    2N6758

    Abstract: 2N677 2N6766 JANTX mosfet 2n6788 qpl-19500 2N67 2N6756 2N6757 2N6758 JANTX
    Text: Standard Power MOSFETs 2N6757, 2N6758 File Number 1587 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 8A and 9A, 1 5 0 V -2 0 0 V rDs on = 0.4 Q and 0.6 O Features: • SOA is pow er-dissipation lim ited


    OCR Scan
    2N6757, 2N6758 50V-200V 2N6757 2N6758 2N6796 O-2I35AF O-205AF 2N6800 2N677 2N6766 JANTX mosfet 2n6788 qpl-19500 2N67 2N6756 2N6758 JANTX PDF

    2N6758

    Abstract: 6757
    Text: UNITRODE CORP 9347963 t UNITRODE CORP ~~~ 92D POWER MOSFET TRANSISTORS 2 0 0 V o lt, 0 .4 o o i c mt , s 1 04 96 D j ; j t x , j t x v 2N6758 T - ' b l - i i O h m N -C h a n n e l " DESCRIPTION The Unltrode power MOSFET design utilizes the most advanced technology available.


    OCR Scan
    2N6758 1L-S-19500/542A 2N6758 6757 PDF

    2N6757

    Abstract: No abstract text available
    Text: HE 0 | MflSSMSE 00GT3Gb 0 | Data Sheet No. PD-9.334D INTERNATIONAL R E C T I F I E R in t e r n a t io n a l r e c t if ie r TOR T-39-11 HEXFETTRANSISTGRS *JANTXV2N6758 *JANTX2N6758 JEDEC REGISTERED IM-GHAIMIMEL G POWER MQSFETs SN6758 SIVI6757 ‘ QUALIFIED TO MIL-S-19500/542


    OCR Scan
    00GT3Gb T-39-11 MIL-S-19500/542 JANTXV2N6758 JANTX2N6758 SN6758 SIVI6757 G-285 Q00ci3Gcl 2N6757 PDF

    1RF9130

    Abstract: jantx2n1800 JAN2N1793 2N6849 2N1915 2n6845 563 j 400v JAN2N3095 T0-209AC IRFF9120
    Text: Government/ Space Products bitematinnai ¡¡¡F te S ? H E X F E T , Mil-Qualified N-Channel Types JEDEC 2N6782 2N6784 2N6786 2N6788 2N6790 2N6792 2N6794 2N6796 2N6798 2N6800 2N6802 Part Numbers JANTX JANTX2N6782 JANTX2N6784 JANTX2N6786 JANTX2N6788 JANTX2N6790


    OCR Scan
    JANTX2N6782 JANTX2N6784 JANTX2N6786 JANTX2N6788 JANTX2N6790 JANTX2N6792 JANTX2N6794 JANTX2N6796 JANTX2N6798 JANTX2N6800 1RF9130 jantx2n1800 JAN2N1793 2N6849 2N1915 2n6845 563 j 400v JAN2N3095 T0-209AC IRFF9120 PDF

    Untitled

    Abstract: No abstract text available
    Text: International Government and Space ïO R lR e c t if ie r HEXFET Power MOSFETs Hermetic Package N-Channel Part bvd ss Number V IRF034 IRF044 IRF054 60 60 RDS(on) (Ohms) lD@ T „ = 25°C c (»> 0.500 0.280 25 44 Iq@ TC = 100°C R thJC Max. Pd @ Tq = 25°C


    OCR Scan
    IRF034 IRF044 IRF054 IRF130 2N6756 JANTX2N6756 JANTXV2N6756 IRF140 IRF150 2N6764 PDF

    2N6901 JANTX

    Abstract: 2N6901 2N6901 JANTXV 2N6901 JANTX harris 2n6898 transistor h44 2n6800 2N6897 JANTXV 2N6897
    Text: Logic-Level Power MOSFETs File Number 2N6901 1877 N-Channel Logic Level Power MOS Field-Effect Transistors L2FET rDs(on): 1.4 fi Feature*: • Design optimized for 5-voit gate drive ■ Can be driven directly from QMOS, NMOS, TTL circuits ■ Compatible with automotive drive requirements


    OCR Scan
    2N6901 2N6901 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 MIL-S-19500/ 2N6901 JANTX 2N6901 JANTXV 2N6901 JANTX harris 2n6898 transistor h44 2N6897 JANTXV 2N6897 PDF

    QPL-19500

    Abstract: 2N6903 2n6901 2N6758 JANTX 2N6903 JANTX 2N6898 JANTX 2N6898 2N6756 2N6758 2N6760
    Text: Logic-Level Power MOSFETs File Number 2N6903 1879 N-Channel Logic Level Power MOS Field-Effect Transistors L2FET rDs(on): 3.65 O N-CHANNEL ENHANCEMENT MODE Features: • Design optimized for S-voit gate drive ■ Can be driven directly from QMOS, NMOS, TTL circuits


    OCR Scan
    2N6903 2N6903 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 MIL-S-19500/ QPL-19500 2n6901 2N6758 JANTX 2N6903 JANTX 2N6898 JANTX 2N6898 2N6756 2N6758 2N6760 PDF

    2N6898 JANTX

    Abstract: 2N6898 2N6898 JANTXV TRANSISTOR C 557 B QPL-19500
    Text: Standard Power MOSFETs File Number 2N6898 1876 Power MOS Field-Effect Transistors P-Channel Enhancement-Mode Power MOS Field-Effect Transistors 25 A, -1 0 0 V rDs on : 0.20 Cl TERMINAL DIAGRAM Features: • SOA is power-dissipation lim ited ■ Nanosecond switching speeds


    OCR Scan
    2N6898 2N6898 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 MIL-S-19500/ 2N6898 JANTX 2N6898 JANTXV TRANSISTOR C 557 B QPL-19500 PDF

    2N6155

    Abstract: 2n6156 qpl-19500 2N6756 2N6901 D-05N md-141 2N6755 2N67 2N6756 JANTX
    Text: Standard Power MOSFETs 2N6755, 2N6756 File Number 1586 Power MOS Field-Effect Transistors N-Channel Enhancernent-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 12A and 14A, 6 0 V -1 0 0 V rDs on = 0.18 fi and 0.25 fl Features: • SOA is power-dissipation limited


    OCR Scan
    2N6755, 2N6756 0V-100V 2N6755 2N6756 2N6796 O-2I35AF O-205AF 2N6800 2N6155 2n6156 qpl-19500 2N6901 D-05N md-141 2N67 2N6756 JANTX PDF

    2N6898

    Abstract: 2N6897 36485 2N6798 TRANSISTOR C 557 B 2n6800 2N6901 IDM30 2N6904 qpl-19500
    Text: Standard Power M O SFETs File Number 1875 2N6897 Power M O S Field-Effect Transistors P-Channei Enhancement-Mode Power M O S Field-Effect Transistors 12 A, 100 V ros on : 0.3 0 TERMINAL DIAGRAM 3 o Features: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds


    OCR Scan
    2N6897 2N6897 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 MIL-S-19500/ 2N6898 36485 2N6798 TRANSISTOR C 557 B 2N6901 IDM30 2N6904 qpl-19500 PDF

    2N6758

    Abstract: 2N6902 QPL-19500
    Text: Logic-Level Power MOSFETs File Number 2N6902 1878 N-Channel Logic Level Power MOS Field-Effect Transistors L2 FET 12 A, 100 V rDs(on): 0.2 fi N-CHANNEL. ENHANCEMENT MODE Features: • Design optimized for 5 volt gate drive • Can be driven directly from Q-MOS,


    OCR Scan
    2N6902 92cs-3374i 2N6902 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 2N6758 QPL-19500 PDF

    transistor 65 C 3549

    Abstract: 2N6800 2N6756 LH0063 QPL-19500 ICI 555
    Text: Standard Power MOSFETs File N u m b e r 2N6800 1904 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor 3A, 400V f D S o n = 1 Q N -C H A N N E L E N H A N C E M E N T M OD E D Features: • m m m m SOA is pow er-dissipation lim ited


    OCR Scan
    2N6800 2N6800 2N6796 O-2I35AF O-205AF T0-205AF 2N6802 MIL-S-19500/ transistor 65 C 3549 2N6756 LH0063 QPL-19500 ICI 555 PDF

    2N6768

    Abstract: 2N6768 JANTX 2N6767
    Text: Standard Power M O S F E T s_ 2N6767, 2N6768 File N u m b e r 1898 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 12A and 14A, 350V - 400V rDS om = 0.4Q and 0.30


    OCR Scan
    2N6767, 2N6768 2N6767 2N6768 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6768 JANTX PDF

    2N6782

    Abstract: 2n6800 LH0063 QPL-19500
    Text: Standard Power MOSFETs 2N6782 File Number 1592 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 3.5A, 100V ro s o n = 0 .6 O Features: • SOA is power-dissipation limited ■ Nanosecond switching speeds


    OCR Scan
    2N6782 2N6782 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 LH0063 QPL-19500 PDF

    2N6792 JANTX

    Abstract: 2N6792 2n6800 C055 LH0063 QPL-19500 2N6904
    Text: Standard Power MOSFETs File N u m be r 1901 2N6792 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistors 2 A, 400V T oS lon = 1 80 N-CHANNEL ENHANCEMENT MODE D Features: • SOA is power-dissipation limited m Nanosecond switching speeds


    OCR Scan
    2N6792 2N6792 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 MIL-S-19500/ 2N6792 JANTX C055 LH0063 QPL-19500 2N6904 PDF