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    2N7000 CIRCUITS Search Results

    2N7000 CIRCUITS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP2701 Toshiba Electronic Devices & Storage Corporation Photocoupler (photo-IC output), 5000 Vrms, 4pin SO6L Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NL Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, WSON10B Visit Toshiba Electronic Devices & Storage Corporation

    2N7000 CIRCUITS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n7000

    Abstract: siemens fet to92 fet to92
    Text: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) 60V 5.0Ω 75mA Order Number / Package TO-92 2N7000 Features Advanced DMOS Technology • Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a


    Original     		PDF 2N7000 2n7000 siemens fet to92 fet to92

    D 92 M 03 DIODE

    Abstract: 2n7000 4W-25 fet 2n7000
    Text: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) 60V 5Ω 75mA Order Number / Package TO-92 2N7000 Features Advanced DMOS Technology • Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a


    Original     		PDF 2N7000 D 92 M 03 DIODE 2n7000 4W-25 fet 2n7000

    2N7000

    Abstract: No abstract text available
    Text: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) 60V 5.0Ω 75mA Order Number / Package TO-92 2N7000 Features Advanced DMOS Technology ❏ Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a


    Original     		PDF 2N7000 2N7000

    Untitled

    Abstract: No abstract text available
    Text: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex 2N7000 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		PDF 2N7000 2N7000 DSFP-2N7000 A110807

    2n7000 equivalent

    Abstract: equivalent of 2n7000
    Text: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex 2N7000 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		PDF 2N7000 DSPD-TO92TapingSpec B070610 2n7000 equivalent equivalent of 2n7000

    2N7000 circuits

    Abstract: 125OC 2N7000 2N7000-G 2n7000g
    Text: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex 2N7000 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		PDF 2N7000 2N7000 DSFP-2N7000 A042507 2N7000 circuits 125OC 2N7000-G 2n7000g

    07153

    Abstract: 03aa02
    Text: 2N7000 N-channel enhancement mode field-effect transistor Rev. 03 — 19 May 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: 2N7000 in SOT54 TO-92 variant .


    Original     		PDF 2N7000 2N7000 03ab40 03ab30 771-2N7000AMO 07153 03aa02

    2N7000 TO-92

    Abstract: No abstract text available
    Text: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex 2N7000 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		PDF 2N7000 2N7000 DSFP-2N7000 A021307 2N7000 TO-92

    TO-92 Package Dimensions diode inc

    Abstract: 2N7000 125OC 2N7000-G transistor 2n7000 2n7000g
    Text: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex 2N7000 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		PDF 2N7000 2N7000 DSFP-2N7000 B091008 TO-92 Package Dimensions diode inc 125OC 2N7000-G transistor 2n7000 2n7000g

    2N7000 MOSFET

    Abstract: Mosfet 2n7000
    Text: 2N7000 N-channel enhancement mode field-effect transistor Rev. 03 — 19 May 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: 2N7000 in SOT54 TO-92 variant .


    Original     		PDF 2N7000 2N7000 03ab40 2N7000 MOSFET Mosfet 2n7000

    2n7000 equivalent

    Abstract: VQ1000J 2n7000 2N7002 MARKING 2n7002 siliconix EQUIVALENT FOR bs170 equivalent of BS170 BS170 mosfet bs170 VQ1000J/P
    Text: 2N7000/7002, VQ1000J/P, BS170 N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) 2N7000 5 @ VGS = 10 V 0.8 to 3 0.2 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5 0.225


    Original     		PDF 2N7000/7002, VQ1000J/P, BS170 2N7000 2N7002 VQ1000P VQ1000J Capaci02, 2n7000 equivalent VQ1000J 2n7000 2N7002 MARKING 2n7002 siliconix EQUIVALENT FOR bs170 equivalent of BS170 BS170 mosfet bs170 VQ1000J/P

    2N7000

    Abstract: BS170 MOSFET bs170 2N7002 vishay VQ1000J/P 2N7002 VQ1000J VQ1000P TO92S BS170-TA
    Text: 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) 2N7000 2N7002 rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 3 0.2 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5


    Original     		PDF 2N7000/2N7002, VQ1000J/P, BS170 2N7002 2N7000 VQ1000P VQ1000J 08-Apr-05 2N7000 BS170 MOSFET bs170 2N7002 vishay VQ1000J/P 2N7002 VQ1000J VQ1000P TO92S BS170-TA

    BS170

    Abstract: VQ1000J 2N7000 2N7000 7002 2N7002 VQ1000P 7002 2n7002 BS170 siliconix
    Text: 2N7000/7002, VQ1000J/P, BS170 Siliconix NĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N7000 5 @ VGS = 10 V 0.8 to 3 0.2 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V


    Original     		PDF 2N7000/7002, VQ1000J/P, BS170 2N7000 2N7002 VQ1000P VQ1000J P-37993--Rev. BS170 VQ1000J 2N7000 2N7000 7002 2N7002 VQ1000P 7002 2n7002 BS170 siliconix

    VQ1000J

    Abstract: 2n7000 VQ1000J/P VQ1000P 2N7002 BS170 TO-92-18R S-52429
    Text: 2N7000/7002, VQ1000J/P, BS170 N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) 2N7000 5 @ VGS = 10 V 0.8 to 3 0.2 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5 0.225


    Original     		PDF 2N7000/7002, VQ1000J/P, BS170 2N7000 2N7002 VQ1000P VQ1000J Capaci02, VQ1000J 2n7000 VQ1000J/P VQ1000P 2N7002 BS170 TO-92-18R S-52429

    code for 2n7002

    Abstract: 2N7002 marking code 72 VQ1000J 2N7002 2N7000 MOSFET VQ1000J/P 2n7000 BS170 VQ1000P SILICONIX 2N7002
    Text: 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) 2N7000 2N7002 rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 3 0.2 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5


    Original     		PDF 2N7000/2N7002, VQ1000J/P, BS170 2N7002 2N7000 VQ1000P VQ1000J O-226AA, BS170 code for 2n7002 2N7002 marking code 72 VQ1000J 2N7002 2N7000 MOSFET VQ1000J/P 2n7000 VQ1000P SILICONIX 2N7002

    ST2N

    Abstract: 2N7002 2N7000 ST2N transistor 2n7000 equivalents 2n7000 equivalent 2N7002 MARKING DSS SOT23 2N7000G JESD97
    Text: 2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET Power MOSFET Features Type VDSS RDS on max ID 2N7000 60 V < 5 Ω(@10V) 0.35 A 2N7002 60 V < 5 Ω(@10V) 0.20 A 3 2 1 • Low Qg ■ Low threshold drive SOT23-3L TO-92 Application


    Original     		PDF 2N7000 2N7002 OT23-3L, OT23-3L ST2N 2N7002 2N7000 ST2N transistor 2n7000 equivalents 2n7000 equivalent 2N7002 MARKING DSS SOT23 2N7000G JESD97

    equivalent of BS170

    Abstract: 2n7002 siliconix 2n7000 equivalent EQUIVALENT FOR bs170 MARKING bs170 2n7000 data sheet VQ1000J codes marking 2N7002 SILICONIX 2N7002 2N7002 MARKING
    Text: 2N7000/7002, VQ1000J/P, BS170 N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) 2N7000 5 @ VGS = 10 V 0.8 to 3 0.2 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 VQ1000P


    Original     		PDF 2N7000/7002, VQ1000J/P, BS170 2N7000 2N7002 VQ1000P VQ1000J Capacitan02, equivalent of BS170 2n7002 siliconix 2n7000 equivalent EQUIVALENT FOR bs170 MARKING bs170 2n7000 data sheet VQ1000J codes marking 2N7002 SILICONIX 2N7002 2N7002 MARKING

    2N7002 MARKING

    Abstract: markings 2n7002 2n7002 siliconix s4 vishay VQ1000J/P 2N7002 marking code 72 APPLICATION NOTES VQ1000J 2n7000 2N7002 vishay SILICONIX 2N7002
    Text: 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) 2N7000 2N7002 rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 3 0.2 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5


    Original     		PDF 2N7000/2N7002, VQ1000J/P, BS170 2N7002 2N7000 VQ1000P VQ1000J 18-Jul-08 2N7002 MARKING markings 2n7002 2n7002 siliconix s4 vishay VQ1000J/P 2N7002 marking code 72 APPLICATION NOTES VQ1000J 2n7000 2N7002 vishay SILICONIX 2N7002

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information ^DS O N BVdgs (max) 60V 5.0ft JI BVdss / Order Number / Package TO-92 2N7000 75mA Features Advanced DMOS Technology □ Free from secondary breakdown □ Low power drive requirement


    OCR Scan     		PDF 2N7000

    Untitled

    Abstract: No abstract text available
    Text: ^ Supertex inc . 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information Order Number / Package BVusg/ ^DS O N b v dgs (max) (min) TO-92 60V 5Q 75mA 2N7000 ' d (ON) Features Advanced DMOS Technology □ These enhancement-mode (normally-off) power transistors


    OCR Scan     		PDF 2N7000

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET BVDgs RdS ON (max) If Ordering Information 60V 5n 75mA b v dss / Order Number / Package TO-92 2N7000 Features I i Free from secondary breakdown !J Low power drive requirement r i Ease of paralleling


    OCR Scan     		PDF 2N7000

    m2n7000

    Abstract: 1000J sot23 BS170
    Text: Tem ic 2N7000/7002, VQIOOOJ/P, BS170_ slUconix N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V B R D S S Min (V) * * D S (o n ) Max (Q) I d (A) Vr.s(ih) (V) 2N7000 5 @ V gs = 10V 0.8 to 3 0.2 2N7002 7.5 @ V gs = 10 V 1 to 2.5


    OCR Scan     		PDF 2N7000/7002, BS170_ 2N7000 2N7002 VQ1000J VQ1000P BS170 P-37993-- VQ1000J/P, m2n7000 1000J sot23 BS170

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information b v dss/ b v dgs RdS ON (max) Id(ON) (min) 60V 5.0Q. 75mA Order Number / Package TO-92 2N7000 Features Advanced DMOS Technology □ Free from secondary breakdown □ Low power drive requirement


    OCR Scan     		PDF 2N7000

    2N7002 marking code 72

    Abstract: 2H7000 2N7002 marking code 72 J TVP8 Marking Code 72 2N7002 marking code vishay
    Text: 2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V D-S MOSFETs PRODUCT SUMMARY Part Number V (B R )D S S M i n (V ) rDS(on) Max (Q) V G S (th ) (V) b (A) 2N7000 5 @ V GS = 1 0V 0.8 to 3 0.2 2N7002 7,5 @ V QS= 10 V 1 to 2.5 0.115 5.5 @ V q 3 = 10 V


    OCR Scan     		PDF 2N7000/2N7002, VQ1000J/P, BS170 2N7000 2N7002 VQ1000J VQ1000P BS170 S-04279-- 16-Jul-01 2N7002 marking code 72 2H7000 2N7002 marking code 72 J TVP8 Marking Code 72 2N7002 marking code vishay