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    2N7002BKS Price and Stock

    Nexperia 2N7002BKS,115

    MOSFET 2N-CH 60V 0.3A 6TSSOP
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    DigiKey 2N7002BKS,115 Cut Tape 215,732 1
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    Rochester Electronics 2N7002BKS,115 119,850 1
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    Nexperia 2N7002BKSH

    MOSFET 2N-CH 60V 0.3A 6TSSOP
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    DigiKey 2N7002BKSH Cut Tape 2,701 1
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    2N7002BKSH Digi-Reel 2,701 1
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    Nexperia 2N7002BKS-ZLX

    MOSFET 2N-CH 60V 0.3A 6TSSOP
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    Nexperia 2N7002BKS115

    Transistor MOSFET Array Dual N-CH 60V 0.3A 6-Pin SOT-363 T/R - Tape and Reel (Alt: 2N7002BKS,115)
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    Avnet Americas 2N7002BKS115 Reel 7,056,000 6 Weeks 3,000
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    NXP Semiconductors 2N7002BKS,115

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    Quest Components 2N7002BKS,115 164
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    2N7002BKS Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N7002BKS NXP Semiconductors 60 V, 300 mA dual N-channel Trench MOSFET Original PDF
    2N7002BKS,115 NXP Semiconductors 2N7002BKS - 60 V, 300 mA dual N-channel Trench MOSFET, SOT363 Package, Standard Marking, Reel Pack, SMD Original PDF
    2N7002BKS/ZLX Nexperia USA Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2 N-CH 60V 300MA SOT363 Original PDF

    2N7002BKS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N7002BKS

    Abstract: dual sot363 g1 TRANSISTOR SMD MARKING CODE MOSFET TRANSISTOR SMD MARKING CODE A1 smd transistor marking zt
    Text: 2N7002BKS 60 V, 300 mA dual N-channel Trench MOSFET Rev. 2 — 23 September 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF 2N7002BKS OT363 SC-88) AEC-Q101 2N7002BKS dual sot363 g1 TRANSISTOR SMD MARKING CODE MOSFET TRANSISTOR SMD MARKING CODE A1 smd transistor marking zt

    Untitled

    Abstract: No abstract text available
    Text: 2N7002BKS 60 V, 300 mA dual N-channel Trench MOSFET Rev. 2 — 23 September 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF 2N7002BKS OT363 SC-88) AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: 2N7002BKS 60 V, 300 mA dual N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original     		PDF 2N7002BKS OT363 SC-88) AEC-Q101

    NX3008NBKMB

    Abstract: BSS138BK BSS84AKS PMV48XP BSH201 2N7002PW nx2301 PMPB27XP PMF170XP 2N7002PS
    Text: Small-signal MOSFET Selection Guide Broad selection of small-signal MOSFETs for a wide range of applications Our advanced MOSFET solutions deliver the flexibility and performance that today´s market demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety


    Original     		PDF OT223 DFN1006B-3, AEC-Q101 Q3/2012 NX3008NBKMB BSS138BK BSS84AKS PMV48XP BSH201 2N7002PW nx2301 PMPB27XP PMF170XP 2N7002PS

    circuit diagram wireless spy camera

    Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
    Text: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint


    Original     		PDF DFN1006D-2 OD882D) DFN1010D-3 OT1215) DFN2020MD-6 OT1220) DFN1608D-2 OD1608) DSN0603 OD962) circuit diagram wireless spy camera PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143

    TRANSISTOR S1A 64 smd

    Abstract: SSOP14 land pattern ip4065cx11 KYS 30-40 4440 IC 5.1 audio amplifier board nx1117 PHD78NQ 1n4148 sod323 t4 NX1117I33Z PMEG3030
    Text: Discrete Semiconductors Selection Guide 2010 Diodes, transistors, ESD and signal conditioning devices Excellence in portfolio and performance Diodes Introducing new package technology Page 7 Portable and increasingly smaller end products fuel the race towards more sophisticated functionality in smaller form


    Original     		PDF OT1061 OT1118 PSSI2021SAY PTVS10VP1UP TRANSISTOR S1A 64 smd SSOP14 land pattern ip4065cx11 KYS 30-40 4440 IC 5.1 audio amplifier board nx1117 PHD78NQ 1n4148 sod323 t4 NX1117I33Z PMEG3030

    2N7002 NXP MARKING

    Abstract: TL431 transistor 139 et cd player amplifier double ic 4440 BCM 4709 sot1194 SSOP14 land pattern ip4065cx11 PMV27UP TRANSISTOR SMD CODE PACKAGE SOT89 gy IP4058CX8/LF
    Text: Discrete Semiconductors Selection Guide 2011 Diodes, protection and signal conditioning devices, bipolar transistors, MOSFETs, thyristors SOD323 SC-76 SOD323 (SC-76) SOD882D / SOD882 SOD882D / SOD882 SOD123F SOD123F SOD80C SOD80C SOT883 (SC-101)  Very high ESD protection levels and


    Original     		PDF OD323 SC-76) OD882D OD882 OD123F 2N7002 NXP MARKING TL431 transistor 139 et cd player amplifier double ic 4440 BCM 4709 sot1194 SSOP14 land pattern ip4065cx11 PMV27UP TRANSISTOR SMD CODE PACKAGE SOT89 gy IP4058CX8/LF

    BSS84AKS

    Abstract: PHB27NQ10T BUK9575-100A BSS138p infineon PSMN1R5-40 LFPAK footprint Renesas PSMN013-100ES SOT323 MOSFET PH BUK95180-100A NX3008
    Text: Power MOSFET Selection Guide 2012 Smaller, faster, cooler 2 Table of contents 20 V – 25 V N-channel MOSFETs ������������������������������������������������������������������������������������������������������������ 9


    Original     		PDF