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    2N7584T1 Price and Stock

    Microchip Technology Inc JANSR2N7584T1

    RH MOSFET 200V TO-254AA
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    Infineon Technologies AG JANSR2N7584T1-13

    Transistor MOSFET N-Channel 200V 45A 3-Pin TO-254AA - Bulk (Alt: JANSR2N7584T1-13)
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    Infineon Technologies AG JANSR2N7584T1-11

    Transistor MOSFET N-Channel 200V 45A 3-Pin TO-254AA - Bulk (Alt: JANSR2N7584T1-11)
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    Infineon Technologies AG JANSR2N7584T1-03

    Transistor MOSFET N-Channel 200V 45A 3-Pin TO-254AA - Bulk (Alt: JANSR2N7584T1-03)
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    Infineon Technologies AG JANSR2N7584T1-19

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    2N7584T1 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-94667D RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA 2N7584T1 IRHMS67260 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67260 100K Rads (Si) RDS(on) 0.029Ω ID 45A* IRHMS63260 0.029Ω 45A* 300K Rads (Si) International Rectifier’s R6TM technology provides


    Original     		PD-94667D O-254AA) 2N7584T1 IRHMS67260 IRHMS67260 IRHMS63260 90MeV/ O-254AA. MIL-PRF-19500 PDF

    2n7584

    Abstract: No abstract text available
    Text: PD-94667E RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA 2N7584T1 IRHMS67260 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67260 100K Rads (Si) RDS(on) 0.029Ω ID 45A* IRHMS63260 0.029Ω 45A* 300K Rads (Si) International Rectifier’s R6TM technology provides


    Original     		PD-94667E O-254AA) 2N7584T1 IRHMS67260 IRHMS67260 IRHMS63260 90MeV/ c254AA. MIL-PRF-19500 2n7584 PDF

    IRHMS67260

    Abstract: 2n7584 2N7584T1
    Text: PD-94667F RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA 2N7584T1 IRHMS67260 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67260 100K Rads (Si) RDS(on) 0.029Ω ID 45A* IRHMS63260 0.029Ω 45A* 300K Rads (Si) Low-Ohmic


    Original     		PD-94667F O-254AA) 2N7584T1 IRHMS67260 IRHMS67260 IRHMS63260 O-254AA 90MeV/ applicat254AA. MIL-PRF-19500 2n7584 2N7584T1 PDF

    2N7584T1

    Abstract: 2n7584 PD-94667D IRHMS67260
    Text: PD-94667D RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA 2N7584T1 IRHMS67260 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHMS67260 100K Rads (Si) RDS(on) 0.029Ω ID 45A* IRHMS63260 0.029Ω 45A* 300K Rads (Si) International Rectifier’s R6TM technology provides


    Original     		PD-94667D O-254AA) IRHMS67260 IRHMS63260 2N7584T1 90MeV/ O-254AA. MIL-PRF-19500 2n7584 PD-94667D PDF

    2N7586

    Abstract: IRHMS67260 marking code mEV 2n7584 2N7486
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 5 July 2013. MIL-PRF-19500/753B 20 May 2013 SUPERSEDING MIL-PRF-19500/753A 19 May 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED


    Original     		MIL-PRF-19500/753B MIL-PRF-19500/753A 2N7580T1, 2N7582T1, 2N7584T1, 2N7586T1, MIL-PRF-19500. 2N7586 IRHMS67260 marking code mEV 2n7584 2N7486 PDF

    2n7584

    Abstract: 2N7486 IN 753A pin configuration 2N7584T1 2N7484 2n7580 2N7586T1 2N7582T1 MIL-PRF19500 2N7580T1
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 19 August 2010. MIL-PRF-19500/753A 19 May 2010 SUPERSEDING MIL-PRF-19500/753 5 June 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED


    Original     		MIL-PRF-19500/753A MIL-PRF-19500/753 2N7580T1, 2N7582T1, 2N7584T1, 2N7586T1, MIL-PRF-19500. 2n7584 2N7486 IN 753A pin configuration 2N7584T1 2N7484 2n7580 2N7586T1 2N7582T1 MIL-PRF19500 2N7580T1 PDF