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    2N918 THERMAL RESISTANCE Search Results

    2N918 THERMAL RESISTANCE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCTH011AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH022AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH021AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH012BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Open-drain type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH012AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation

    2N918 THERMAL RESISTANCE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N918

    Abstract: 2N918 thermal resistance 2N918 oscillator
    Text: 2N918 HIGH-FREQUENCY OSCILLATORS AND AMPLIFIERS DESCRIPTION The 2N918 is a silicon planar epitaxial NPN transistors in Jedec TO-72 metal case. It is designed for low-noise VHF amplifiers, oscillators up to 1 GHz, non-neutralized IF amplifiers and non-saturating circuits with rise and fall times of less than 2.5 ns.


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    2N918 2N918 2N918 thermal resistance 2N918 oscillator PDF

    2N918

    Abstract: 2n918 transistor transistor TO-72 MARKING CODE N for RF transistor
    Text: 2N918 NPN SILICON RF TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N918 type is an NPN silicon RF transistor, manufactured by the epitaxial planar process and designed for high frequency amplifier and oscillator applications.


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    2N918 300ess 100MHz 500MHz 200MHz 60kHz 11-September 2n918 transistor transistor TO-72 MARKING CODE N for RF transistor PDF

    874-D20

    Abstract: transformer JS 0432 d 2037 transistor 2n918 die 2N918 2N918UB 2N918 thermal resistance
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 24 August 2010. MIL-PRF-19500/301K 24 May 2010 SUPERSEDING MIL-PRF-19500/301J 12 October 2007 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, NPN SILICON, LOW-POWER,


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    MIL-PRF-19500/301K MIL-PRF-19500/301J 2N918 2N918UB, MIL-PRF-19500. 874-D20 transformer JS 0432 d 2037 transistor 2n918 die 2N918UB 2N918 thermal resistance PDF

    2N918 JANTX

    Abstract: 2n918 die 2N918 2N918UB HP343A 2N918 thermal resistance 2N918 JANS 2n918 set L-41000
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 16 May, 2002. MIL-PRF-19500/301F 16 February, 2002 SUPERSEDING MIL-PRF-19500/301E 4 October 2000 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN SILICON, LOW-POWER


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    MIL-PRF-19500/301F MIL-PRF-19500/301E 2N918 2N918UB MIL-PRF-19500 2N918 JANTX 2n918 die 2N918UB HP343A 2N918 thermal resistance 2N918 JANS 2n918 set L-41000 PDF

    2N918 semelab

    Abstract: No abstract text available
    Text: 2N918ADCSM DUAL HIGH FREQUENCY NPN TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) 4.32 ± 0.13 (0.170 ± 0.005)


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    2N918ADCSM MO-041BB) 2N918 semelab PDF

    NE602AN

    Abstract: NE602AD NE602AFE SA602AN SA602AD oscillator 50mhz DIP SR00068 3SK126 ne602 NE602A
    Text: Philips Semiconductors Product specification Double-balanced mixer and oscillator DESCRIPTION NE/SA602A PIN CONFIGURATION The NE/SA602A is a low-power VHF monolithic double-balanced mixer with input amplifier, on-board oscillator, and voltage regulator. It is intended for high performance, low power communication


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    NE/SA602A NE/SA602A SA602A 45MHz. 200MHz. SR00078 SR00081 SR00079 SR00082 NE602AN NE602AD NE602AFE SA602AN SA602AD oscillator 50mhz DIP SR00068 3SK126 ne602 NE602A PDF

    SFG455

    Abstract: colpitts oscillator USING IFT SR00068 colpitts oscillator 400 MHz hartley oscillator using tank circuit SA602AD SR00072 sa602a SFG455A
    Text: RF COMMUNICATIONS PRODUCTS SA602A Double-balanced mixer and oscillator Product specification Replaces datasheet of April 17, 1990 IC17 Data Handbook Philips Semiconductors 1997 Nov 07 Philips Semiconductors Product specification Double-balanced mixer and oscillator


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    SA602A SA602A 45MHz. 771-SA602AD/01 SA602AD/01 SFG455 colpitts oscillator USING IFT SR00068 colpitts oscillator 400 MHz hartley oscillator using tank circuit SA602AD SR00072 SFG455A PDF

    SA602

    Abstract: colpitts oscillator USING IFT SA602A hartley oscillator using tank circuit 2N918 thermal resistance 3SK126 SA604 SFG455A3 SA602AD SA602AN
    Text: RF COMMUNICATIONS PRODUCTS SA602A Double-balanced mixer and oscillator Product specification Replaces datasheet of April 17, 1990 IC17 Data Handbook Philips Semiconductors 1997 Nov 07 Philips Semiconductors Product specification Double-balanced mixer and oscillator


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    SA602A SA602A SA602 colpitts oscillator USING IFT hartley oscillator using tank circuit 2N918 thermal resistance 3SK126 SA604 SFG455A3 SA602AD SA602AN PDF

    MCA0616/1

    Abstract: T-120-01B Skynet Electronic
    Text: Space Products Semelab products and processes for space applications Contents 1. Introduction 4 2. Programmes Supported 5 3. Innovations 6 3.1 Improving the Space Weather Forecast with the LCC1- 4 6 3.2 SoLaRfets – Radiation Tolerant MosFETS 7 3.3 Si3N4 via technology


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    MIL-PRF-19500 QR216, QR217 FM36235 M/0103/CECC/UK 1360/M VQC-03-003050 VQC-03-003049 U3158 2M8S02 MCA0616/1 T-120-01B Skynet Electronic PDF

    BLOCK DIAGRAM NE602

    Abstract: SA602A Signetics NE602 Crystal Radio applications an1983 philips an1982 MARKING CODE 50602 SA602AN
    Text: RF COMMUNICATIONS PRODUCTS SA602A Double-balanced mixer and oscillator Product specification Replaces datasheet of April 17, 1990 IC17 Data Handbook Philips Semiconductors 1997 Nov 07 Philips Semiconductors Product specification Double-balanced mixer and oscillator


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    SA602A SA602A 45MHz. BLOCK DIAGRAM NE602 Signetics NE602 Crystal Radio applications an1983 philips an1982 MARKING CODE 50602 SA602AN PDF

    Untitled

    Abstract: No abstract text available
    Text: SA602A Double-balanced mixer and oscillator Rev. 3 — 27 May 2014 Product data sheet 1. General description The SA602A is a low-power VHF monolithic double-balanced mixer with input amplifier, on-board oscillator, and voltage regulator. It is intended for high-performance, low-power


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    SA602A SA602A PDF

    2N3810 LCC

    Abstract: 2N2222A LCC1 ESCC 5202-001 MCA3201/2B ESCC 5204/002 bul54ah mp2835 ESCC 5201-002 silicon carbide JFET 2n918 die
    Text: Space Products Semelab products and processes for space applications SEMELAB | experience and innovation 2 Contents 1. Introduction . 4 2. Programmes Supported . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5


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    FM36235 M/0103/CECC/UK 1360/M VQC-03-003050 VQC-03-003049 U3158 2M8S02 2N3810 LCC 2N2222A LCC1 ESCC 5202-001 MCA3201/2B ESCC 5204/002 bul54ah mp2835 ESCC 5201-002 silicon carbide JFET 2n918 die PDF

    IN2222A

    Abstract: transitron catalog TCR43 TM106 IN443 1n9448 sv4091 IN4868 diode 3N68 IN536
    Text: ron Tro nsitron electronic corporation e I ron 168 Albion Street . Wakefield. Massachusetts 01881 WAKEFIELD, MASSACHUSE TTS BOSTON, MASSACHUSETTS MELROSE, MASSACHUSETTS NUEVO LAREDO, MEXICO BERKSHIRE, ENGLAND PARIS, FRANCE AMSTERDAM, THE NETHERLANDS ~ ciectl'onic corpOI'atioll


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    2N918

    Abstract: 2n3600 2CU8 BFX73
    Text: 3GE D • TSSTSB? DDaQ^fl11 4 ■ S G S -T H O M S O N U L IO T « ! "T-'SMS B F X 7 3 -2 N 9 1 8 2N 3600 S G S-THOMSON HIGH-FREQUENCY OSCILLATORS AND AMPLIFIERS The BFX73, 2N918 and 2N3600 are silicon planar epitaxial NPN transistors in Jedec TO-72 metal


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    BFX73, 2N918 2N3600 T-31-15 73-2N 918-2N 2CU8 BFX73 PDF

    2n3600

    Abstract: 2N918 sy 171 BFX73 19S8 BFX73-2N918 G2053
    Text: „ S C S -T H O M S O N B FX 73-2N 918 fc7 # 2 N 3 6 0 0 S G S - T H 0MS0N HIGH-FREQUENCY OSCILLATORS AND AMPLIFIERS The BFX73, 2N918 and 2N3600 are silicon planar epitaxial NPN transistors in Jedec TO-72 metal case. They are designed for low-noise VHF amplifiers, os­


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    OQBCHfl11) BFX73-2N918 2N3600 BFX73, 2N918 2N3600 G-20SJ G-2053 2e1237 BFX73-2N918-2N3600 sy 171 BFX73 19S8 BFX73-2N918 G2053 PDF

    beta transistor 2N2222

    Abstract: 1N4532 1n9148 2N2926 equivalent 2n RF transistor 2N5249 2N6006 DIODE 1N3605 2N4424 equivalent 2N6002
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I Voltage 50/iA to NPN 5mA 5mA ra p 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 GET3S3B GET3638A 2NSOOO 2N6001 2N6003 2N6000 2N6002 2N60D2 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003


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    50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 beta transistor 2N2222 1N4532 1n9148 2N2926 equivalent 2n RF transistor 2N5249 2N6006 DIODE 1N3605 2N4424 equivalent 2N6002 PDF

    BSX19 equivalent

    Abstract: BC350 bc107 BFW63 bcw17 SHORT DATA ON 2N744 transistor BC287 2N3020 BC451 2N2868
    Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX PRODUCT GUIDE SELECTION GUIDE CROSS REFERENCE HANDLING PRECAUTION QUALITY SURFACE MOUNTING CASE: SOT-23 DATASHEETS PACKAGES Page 4 5 7 9 14 24 25 30 35 419 INTRODUCTION This databook contains datasheets covering the range of discrete devices for small


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    OT-23 BSX19 equivalent BC350 bc107 BFW63 bcw17 SHORT DATA ON 2N744 transistor BC287 2N3020 BC451 2N2868 PDF

    E421 fet

    Abstract: equivalent transistor e176 J2N2608 J2N3821 E112 jfet e420 dual jfet 2N390G TRANSISTOR E421 dual JFET 2N4360 equivalent transistors Teledyne Semiconductor jfet
    Text: Discretes from Teledyne Semiconductor In this catalog are listed more than 2000 high-quality diodes, bipolar transistors and JFETs available from Teledyne Semiconductor. Key specifications are included for each device and many are available w ith hi-rel processing to m ilitary specifications.


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    O-72P* O-92X O-105 O-106 O-106P E421 fet equivalent transistor e176 J2N2608 J2N3821 E112 jfet e420 dual jfet 2N390G TRANSISTOR E421 dual JFET 2N4360 equivalent transistors Teledyne Semiconductor jfet PDF

    transistor cross reference

    Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
    Text: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC


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    MT1115

    Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
    Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir


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    108th MT1115 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117 PDF

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


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    SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350 PDF

    1n813 fairchild

    Abstract: 2N3303 abb inverter manual acs 800 FD6666 diode 2N3137 UA703 equivalent FD200 diode 2N2369 AVALANCHE PULSE GENERATOR UA716 Fairchild dtl catalog
    Text: Fairchild Semiconductor Dab Cataloi 196! The Fairchild Semiconductor Data Cataloc — an all-inclusive volume of product infor mation covering diodes, transistors, digita and linear integrated circuits, MSI and LS devices from the world's largest suppliei


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    BR-BR-0034-58 1n813 fairchild 2N3303 abb inverter manual acs 800 FD6666 diode 2N3137 UA703 equivalent FD200 diode 2N2369 AVALANCHE PULSE GENERATOR UA716 Fairchild dtl catalog PDF

    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    3866S

    Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
    Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM


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