z144
Abstract: CA3127 1021-P1 cascode transistor array HP342A CA3127E CA3127M CA3127M96 zener Diode B22
Text: CA3127 High Frequency NPN Transistor Array August 1996 Features Description • Gain Bandwidth Product fT . . . . . . . . . . . . . . . . >1GHz The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the
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CA3127
CA3127
500MHz.
z144
1021-P1
cascode transistor array
HP342A
CA3127E
CA3127M
CA3127M96
zener Diode B22
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z144
Abstract: zener Diode B22 1021-P1 cascode transistor array CA3127 CA3127E CA3127M CA3127M96 HP342A ,zener Diode B22
Text: CA3127 S E M I C O N D U C T O R High Frequency NPN Transistor Array August 1996 Features Description • Gain Bandwidth Product fT . . . . . . . . . . . . . . . . >1GHz The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the
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CA3127
CA3127
500MHz.
200MHz
z144
zener Diode B22
1021-P1
cascode transistor array
CA3127E
CA3127M
CA3127M96
HP342A
,zener Diode B22
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HP-343A
Abstract: HP342A y12 t 646 HP343A CA3127E 1021-P1 cascode transistor array 150MIL CA3127 CA3127F
Text: CA3127 S E M I C O N D U C T O R High Frequency N-P-N Transistor Array March 1993 Features Description • Gain Bandwidth Product fT . . . . . . . . . . . . . . . . >1GHz The CA3127* consists of five general purpose silicon n-p-n transistors on a common monolithic substrate. Each of the
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CA3127
CA3127*
CA3127
500MHz.
100MHz
1021-P1
100MHz
HP343A
HP-343A
HP342A
y12 t 646
HP343A
CA3127E
1021-P1
cascode transistor array
150MIL
CA3127F
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ccb transistor
Abstract: TRANSISTOR 100MHz
Text: CA3127 Data Sheet August 2003 FN662.4 High Frequency NPN Transistor Array Features The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the completely isolated transistors exhibits low 1/f noise and a
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CA3127
FN662
CA3127
500MHz.
30dBtersil
ccb transistor
TRANSISTOR 100MHz
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2N918 JANTX
Abstract: 2n918 die 2N918 2N918UB HP343A 2N918 thermal resistance 2N918 JANS 2n918 set L-41000
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 16 May, 2002. MIL-PRF-19500/301F 16 February, 2002 SUPERSEDING MIL-PRF-19500/301E 4 October 2000 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN SILICON, LOW-POWER
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MIL-PRF-19500/301F
MIL-PRF-19500/301E
2N918
2N918UB
MIL-PRF-19500
2N918 JANTX
2n918 die
2N918UB
HP343A
2N918 thermal resistance
2N918 JANS
2n918 set
L-41000
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z144
Abstract: HP342A CA3127 CA3127M CA3127MZ
Text: CA3127 Data Sheet June 5, 2006 FN662.5 High Frequency NPN Transistor Array Features The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the completely isolated transistors exhibits low 1/f noise and a
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CA3127
FN662
CA3127
500MHz.
z144
HP342A
CA3127M
CA3127MZ
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874-D20
Abstract: transformer JS 0432 d 2037 transistor 2n918 die 2N918 2N918UB 2N918 thermal resistance
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 24 August 2010. MIL-PRF-19500/301K 24 May 2010 SUPERSEDING MIL-PRF-19500/301J 12 October 2007 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, NPN SILICON, LOW-POWER,
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MIL-PRF-19500/301K
MIL-PRF-19500/301J
2N918
2N918UB,
MIL-PRF-19500.
874-D20
transformer JS 0432
d 2037 transistor
2n918 die
2N918UB
2N918 thermal resistance
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