2SA708 NEC
Abstract: MMST8598 150JJ BCW93B motorola BC361-10 LOW-POWER SILICON PNP BC488A 6u sot-23 2SA1283C
Text: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 D29E9 D29E9 TP5821 BCW93A BCW93A 2SA560 BC488 BC488-18 BC488-5 BC488L BC361-10 BC432 BC1Sl-l0 BC303-5 BC303-5 BC303-5 2N2591 BCW97A 2N4032 2NS223 ~~~~ 25 30 35 40 BFT70 BFT80 BFT80 2N4028 MPS751 2N2S03
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D29E9
TP5821
BCW93A
2SA560
BC488
BC488-18
BC488-5
BC488L
2SA708 NEC
MMST8598
150JJ
BCW93B motorola
BC361-10
LOW-POWER SILICON PNP
BC488A
6u sot-23
2SA1283C
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2N915
Abstract: 2N2926 2n2926 transistor mps3391 2n3710 2n2924 transistor 2N3904 die 2C3904 MPS3394 MPS3392
Text: 3M MOTORO LA SC { D I O D E S / O P T O 6367255 MOTOROLA SC »E | L3b?aSS 0 0 3 7 ^ 5 CD I O D E S / O P T O 34 C 37992 SILICON SM ALL-SIGNAL TRANSISTOR DICE continued) 2C3904 DIE NO. — NPN LINE SOURCE — DMB105 This die provides performance similar to that of the following device types:
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DMB105
2C3904
2N915
2N916
2N2716*
2N2923
2N2924
2N2925
2N2926*
2N3390*
2N2926
2n2926 transistor
mps3391
2n3710
2n2924 transistor
2N3904 die
2C3904
MPS3394
MPS3392
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Untitled
Abstract: No abstract text available
Text: Maximum Ratings Type No. 2N5088 ^CBO ^CEO V Min <V) Min 35 30 Electrical Characteristics (Ta=25“C, Unless Otherwise Specified) beo ?D m (A) (V) Min 0Tc=26°c 5 ^CB 'c e s ^CE " fe (PA) @(V) (UA) (V) Max Max Min 0.625 0.05 0.05 20 300 350 300 'c&
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2N5088
2N5127
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Npn 310
Abstract: No abstract text available
Text: INTEX/ SENITRONICS 27E D • MfibTSma jo m iu u ii GD0 Ü5 Ö3 fi ■ 7 ^ < Z 7 - 0 / Semitronics Corp. SEMICONDUCTORS TO-92 transistors Maximum Ratings Type Packtge D iv « Hfe Min/Max VCE Sat 3 Iç/la Volts mA/mA Cch pF Mas _ _ . _ 2N3903 2N3904 2N3905
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2N3903
2N3904
2N3905
2N3906
2N4123
2N4124
2N4125
2N4126
2N4264
2N4265
Npn 310
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2N5133
Abstract: 2N5133 transistor 2N5136 2N5088 2N5127 2N5128 2N5129 2N5130 2N5131 2N5132
Text: Maximum Ratings Type No. 2N5088 ^CBO ^CEO V <V) Min Min 35 30 Electrical Characteristics (Ta=25“C, Unless Otherwise Specified) ?D m (A) (V) Min 0Tc=26°c 5 beo ^CB ' c e s ^CE " fe 'c& (PA) @(V) (UA) (V) (mA) Max Max Min Max 0.625 0.05 0.05 20 300
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2N5088
2N5127
2N5128
2N5129
2N5133
2N5133 transistor
2N5136
2N5130
2N5131
2N5132
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ST3904
Abstract: NS3903 TIS92 2N2926 NS3904 2n2926 ses 2N915 MPQ3904 2N3694 2N2712
Text: NPN Transistors Case Style Vcbo V Min vCEO (V) Min Vebo (V) Min 2N2712 TO-92 (94) 1B 18 2N2714 TO-92 (94) 18 2N2923 TO-92 (94) 2N2924 VCE(SAT) VBE(SAT) A m p lifie r s . C0b (PF) Max a n d S w itc h e s toff (ns) Max NF (dB) Max Test Conditions Process No.
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