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    2P TRANSISTOR Search Results

    2P TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2P TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    npn 2222 transistor

    Abstract: 2222 NPN Transistor 2222 npn 2222 Q68000-A8330
    Text: NPN Silicon Switching Transistor SXT 2222 A High current gain: 0.1 mA to 500 mA ● Low collector-emitter saturation voltage ● Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 2222 A 2P Q68000-A8330 B SOT-89 C E Maximum Ratings


    Original     		PDF Q68000-A8330 OT-89 npn 2222 transistor 2222 NPN Transistor 2222 npn 2222 Q68000-A8330

    IRFG6110

    Abstract: JANTX2N7336 JANTXV2N7336 MO-036AB 90436
    Text: PD - 90436F POWER MOSFET THRU-HOLE MO-036AB IRFG6110 JANTX2N7336 JANTXV2N7336 REF:MIL-PRF-19500/598 100V, Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFG6110 IRFG6110 RDS(on) 0.7Ω 1.4Ω ID CHANNEL 1.0A N -0.75A P


    Original     		PDF 90436F MO-036AB) IRFG6110 JANTX2N7336 JANTXV2N7336 MIL-PRF-19500/598 150mH, IRFG6110 JANTX2N7336 JANTXV2N7336 MO-036AB 90436

    Untitled

    Abstract: No abstract text available
    Text: PD - 91664B IRFG5210 POWER MOSFET 200V, Combination 2N-2P-CHANNEL THRU-HOLE MO-036AB HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFG5210 IRFG5210 RDS(on) 1.6Ω 1.6Ω ID 0.68A -0.68A CHANNEL N P HEXFET® MOSFET technology is the key to International


    Original     		PDF 91664B IRFG5210 MO-036AB) 276mH, 475mH, -200V, MO-036AB

    Untitled

    Abstract: No abstract text available
    Text: PD - 90437D POWER MOSFET THRU-HOLE MO-036AB IRFG5110 100V, Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFG5110 IRFG5110 RDS(on) 0.7Ω 0.7Ω ID 1.0A -1.0A CHANNEL N P HEXFET® MOSFET technology is the key to International


    Original     		PDF 90437D MO-036AB) IRFG5110 150mH, -100V, MO-036AB

    ota1

    Abstract: No abstract text available
    Text: V e rs i o n 2. 1, 22 M a rc h 2 0 1 0 CCM-PFC ICE 2P CS 03 ICE 2P CS 03 G St a n d a l o n e Po w e r F a c to r Co r re c t io n P F C C o n tr o lle r i n Co n tin u o u s C o n d u c t io n M o d e (C CM ) wit h I n p u t B ro w n -O u t Pr o te c t io n


    Original     		PDF

    2PCS06

    Abstract: ice2pcs06 ICE2PCS06G, ice2pcs01
    Text: V er s i on 1 . 1 , M a r 2 0 1 0 CCM-PFC ICE 2P CS 06 ICE 2P CS 06 G St a n d a l o n e Po w e r F a c to r Co r re c t io n P F C C o n tr o lle r i n Co n tin u o u s C o n d u c t io n M o d e (C CM ) wit h I n p u t B ro w n -O u t Pr o te c t io n


    Original     		PDF

    2PCS02

    Abstract: ICE2pcs02 ICE2PCS02G
    Text: V e rs i o n 2. 4, 22 M a r 2 0 1 0 CCM-PFC ICE 2P CS 02 ICE 2P CS 02 G St a n d a l o n e Po w e r F a c to r Co r re c t io n P F C C o n tr o lle r i n Co n tin u o u s C o n d u c t io n M o d e (C CM ) wit h I n p u t B ro w n -O u t Pr o te c t io n


    Original     		PDF

    2PCS04

    Abstract: ICE2PCS04G
    Text: V e rs i o n 2. 1, 22 M a rc h 2 0 1 0 CCM-PFC ICE 2P CS 04 ICE 2P CS 04 G St a n d a l o n e Po w e r F a c to r Co r re c t io n P F C C o n tr o lle r i n Co n tin u o u s C o n d u c t io n M o d e (C CM ) wit h I n p u t B ro w n -O u t Pr o te c t io n


    Original     		PDF

    68A diode

    Abstract: MJ 68A IRFG5210 MO-036AB 4.5v to 100v input regulator
    Text: PD - 91664B IRFG5210 POWER MOSFET 200V, Combination 2N-2P-CHANNEL THRU-HOLE MO-036AB HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFG5210 IRFG5210 RDS(on) 1.6Ω 1.6Ω ID 0.68A -0.68A CHANNEL N P HEXFET® MOSFET technology is the key to International


    Original     		PDF 91664B IRFG5210 MO-036AB) 276mH, 475mH, -200V, MO-036AB 68A diode MJ 68A IRFG5210 MO-036AB 4.5v to 100v input regulator

    2N5086

    Abstract: 2N5087 CBVK741B019 F63TNR MMBT5086 MMBT5087 PN2222N
    Text: 2N5086 / MMBT5086 / 2N5087 / MMBT5087 2N5086 2N5087 MMBT5086 MMBT5087 C E C B TO-92 SOT-23 E B Mark: 2P / 2Q PNP General Purpose Amplifier This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50 mA.


    Original     		PDF 2N5086 MMBT5086 2N5087 MMBT5087 2N5086 2N5087 MMBT5086 OT-23 CBVK741B019 F63TNR MMBT5087 PN2222N

    SOT-23 MARK 2Q

    Abstract: BEL 167 transistor transistor k 2541 2N5086 2N5087 CBVK741B019 F63TNR MMBT5086 MMBT5087 PN2222N
    Text: 2N5086 / MMBT5086 / 2N5087 / MMBT5087 2N5086 2N5087 MMBT5086 MMBT5087 C E C B TO-92 SOT-23 E B Mark: 2P / 2Q PNP General Purpose Amplifier This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50 mA.


    Original     		PDF 2N5086 MMBT5086 2N5087 MMBT5087 2N5086 2N5087 MMBT5086 OT-23 SOT-23 MARK 2Q BEL 167 transistor transistor k 2541 CBVK741B019 F63TNR MMBT5087 PN2222N

    w34 transistor

    Abstract: No abstract text available
    Text: EO PLASTIC T-1% PAIR OPTOELECTRONICS QPD1223 PACKAGE DIMENSIONS 205 5.21 185 (4.70) REFERENCE SURFACE REFERENCE SURFACE COLLECTOR .100 (2.54) NOM .025 (.640) .015 (.380) SQ NOM 2P LC S .025 (.640) .015 (.380) SQ NOM ' 2P LC S INFRARED LED PHOTOTRANSISTOR


    OCR Scan     		PDF QPD1223 ST2169 w34 transistor

    DS199

    Abstract: No abstract text available
    Text: FMMT2222 FMMT2222A S0T23 NPN SILICON PLANAR SWITCHING TRANSISTORS PARTMARKING DETAILS: FMMT2222 - 1B FMMT2222A - 1P FMMT2222R - 2P FMMT2222AR - 3P ABSOLUTE MAXIMUM RATINGS SY M B O L PAR AM ETER Collector-Base Voltage Collector-Em itter Voltage Emitter-Base Voltage


    OCR Scan     		PDF S0T23 FMMT2222 FMMT2222A FMMT2222R FMMT2222AR FMMT2222 FMMT2222A 140KHz DS199

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTSF2P02HD/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M T S F 2P 02H D Medium Power Surface Mount Products TMOS Single P-Channel Field Effect Transistor Motorola Preferred Device Micro8™ devices are an advanced series of power MOSFETs


    OCR Scan     		PDF MTSF2P02HD/D 2PHX43416-0

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTSF2P03HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M T S F 2P 03H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistor Micro8™ devices are an advanced series of power MOSFETs


    OCR Scan     		PDF MTSF2P03HD/D

    74LS24

    Abstract: No abstract text available
    Text: MITSUBISHI LSTTLs M 74LS242P QUADRUPLE BUS TRANSCEIVER W ITH 3-STATE OUTPUT INVERTED DESCRIPTION The M 74L S 24 2P is a semiconductor integrated circuit PIN CONFIGURATION (TOP VIEW) containing 4 bus transmitters/receivers circuit w ith 3-state inverted outputs.


    OCR Scan     		PDF 74LS242P --15m b2LHfl27 0013Sbl 14-PIN 16-PIN 20-PIN 74LS24

    ASEA motor

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M TSF2P02HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M T S F 2P 02H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistor Micro8™ devices are an advanced series of power MOSFETs


    OCR Scan     		PDF TSF2P02HD/D ASEA motor

    6 pin TRANSISTOR SMD CODE PA

    Abstract: BUZ22 smd code buz smd rgs BUZ22 SMD BUZ22SMD Diode smd code sm PH smd transistor PH smd transistor A7J TRANSISTOR SMD XD
    Text: Infineon technologies BUZ 22 SMD SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 D BUZ 22 SMD </ Type 100 V 34 A ^D S on) Package Ordering Code 0.055 Í2 d 2p a k Q67042-S4139 Maximum Ratings Parameter Symbol


    OCR Scan     		PDF BUZ22SMD q67042-s4139 DsJ14 6 pin TRANSISTOR SMD CODE PA BUZ22 smd code buz smd rgs BUZ22 SMD BUZ22SMD Diode smd code sm PH smd transistor PH smd transistor A7J TRANSISTOR SMD XD

    MJ10005

    Abstract: MJ10004 ie 10a MJ10004PFI TO218 20A Darlington S537 MJ-10004
    Text: • QDE^Ob^ 1 ■ SCS-THOMSON S ^ T zZ3>-'2P\ _ _ M J10004/4P /4PFI M J10005/5P/5PFI G S-THOMSON 3DE D ' EPITAXIAL PLANAR NPN DESC RIPTIO N The MJ10004/5, MJ10004P/5P and MJ10004PFI/ 5PFI are silicon epitaxial planar NPN transistors in monolithic Darlington configuration with integrated


    OCR Scan     		PDF J10004/4P/4PFI MJ10005/5P/5PFI MJ10004/5, MJ10004P/5P MJ10004PFI/ O-218 ISOWATT218 MJ10004/4P/4PFI 400mA MJ10005 MJ10004 ie 10a MJ10004PFI TO218 20A Darlington S537 MJ-10004

    JS301

    Abstract: transistor 2222a sot 89 Q68000-A8330 2222A PMDC transistor marking code 7C transistor 2222a SXT2222A
    Text: SIEMENS NPN Silicon Switching Transistor SXT 2222 A • High current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel P in t tonfigu ation 1 2 3 Package1) SXT 2222 A 2P Q68000-A8330 B SOT-89 C E


    OCR Scan     		PDF VPS05162 Q68000-A8330 OT-89 53SbGS EHP00890 BE35LÃ JS301 transistor 2222a sot 89 2222A PMDC transistor marking code 7C transistor 2222a SXT2222A

    DITTO

    Abstract: MIP103 2pg301 Power Switch 45V MIP111 MIP108 2PG302 2PG351 MIP107 MIP105
    Text: Field Effect Transistors • IGBT Absolute Maxim um Ratings Application Strobo Type No. Electrical Characteristics VcES lc lc peak V ce (sat) (V) (A) (A) (V) td (on) td (off) tf (ns) (ns) (ns) 2P G 301 400 20 130 < 2.25 20 25 250 2 N T ype D47 2PG 302 400


    OCR Scan     		PDF 2PG301 2PG302 2PG351 MIP103 500kHz MIP105 HSOP-24D MIP111 750kHz DITTO Power Switch 45V MIP108 MIP107 MIP105

    "Intelligent Power Device"

    Abstract: No abstract text available
    Text: Field Effect Transistors • IGBT Absolute M axim um Ratings Application Strobo Type No. Electrical Characteristics V ces lc lc peak V ce (sat) (V) (A) (A) (V) lc (mA) 2P G 301 400 20 130 <2.25 2PG 302 400 5 130 2PG 351 400 5 130 td (on) td (off) tf (ns)


    OCR Scan     		PDF 500kHz 380mA 750kHz HSOP-24D 800kHz OP-28D IP161 100kHz O-220 "Intelligent Power Device"

    MIP103

    Abstract: MIP108 2PG301 2PG302 2PG351 96v charger circuit MIP107 5A35 "Intelligent Power Device"
    Text: Field Effect Transistors • IGBT Absolute Maxim um Ratings Application Strobo Type No. Electrical Characteristics VcES lc lc peak V ce (sat) (V) (A) (A) (V) td (on) td (off) tf (ns) (ns) (ns) 2P G 301 400 20 130 < 2.25 20 25 250 2 N T ype D47 2PG 302 400


    OCR Scan     		PDF 2PG301 2PG302 2PG351 MIP103 500kHz MIP105 HSOP-24D MIP111 750kHz MIP108 96v charger circuit MIP107 5A35 "Intelligent Power Device"

    Untitled

    Abstract: No abstract text available
    Text: in te rrii RFP12P08, RFP12P10 Data Sheet 12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs The R FP 12P 08, and R F P 1 2P 10 are P-Channel enhancem ent mode silicon gate power field effect transistors June 1999 File Number 1495.2 Features • 12A, 8 0 V and 100V


    OCR Scan     		PDF RFP12P08, RFP12P10 AN7254 AN7260