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    MMBT5086 Search Results

    MMBT5086 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MMBT5086 Fairchild Semiconductor PNP General Purpose Amplifier Original PDF
    MMBT5086 Fairchild Semiconductor PNP General Purpose Amplifier Original PDF
    MMBT5086 Fairchild Semiconductor PNP General Purpose Amplifier Original PDF
    MMBT5086 Sinyork Mini size of Discrete semiconductor elements Original PDF
    MMBT5086 Motorola European Master Selection Guide 1986 Scan PDF
    MMBT5086 Motorola PNP silicon low noise transistor. Scan PDF
    MMBT5086 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    MMBT5086 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    MMBT5086 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MMBT5086 National Semiconductor Low Noise Amplifiers Scan PDF
    MMBT5086 National Semiconductor PNP General Purpose Amplifier Scan PDF
    MMBT5086 Samsung Electronics PNP (LOW NOISE TRANSISTOR) Scan PDF

    MMBT5086 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MMBT5087

    Abstract: BF254
    Text: 2N5086 / MMBT5086 / 2N5087 / MMBT5087 2N5086 2N5087 MMBT5086 MMBT5087 C E C B TO-92 SOT-23 E B Mark: 2P / 2Q PNP General Purpose Amplifier This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50 mA.


    Original     		2N5086 MMBT5086 2N5087 MMBT5087 2N5087 OT-23 MMBT5087 BF254 PDF

    2N5086

    Abstract: 2N5087 CBVK741B019 F63TNR MMBT5086 MMBT5087 PN2222N
    Text: 2N5086 / MMBT5086 / 2N5087 / MMBT5087 2N5086 2N5087 MMBT5086 MMBT5087 C E C B TO-92 SOT-23 E B Mark: 2P / 2Q PNP General Purpose Amplifier This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50 mA.


    Original     		2N5086 MMBT5086 2N5087 MMBT5087 2N5086 2N5087 MMBT5086 OT-23 CBVK741B019 F63TNR MMBT5087 PN2222N PDF

    2N5087 equivalent

    Abstract: 2N5087 fairchild 741 2N5086 MMBT5086 MMBT5087 2n5087 fairchild
    Text: 2N5086 2N5087 MMBT5086 MMBT5087 C E C B TO-92 B SOT-23 E Mark: 2P / 2Q PNP General Purpose Amplifier This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50 mA. Sourced from Process 62.


    Original     		2N5086 2N5087 MMBT5086 MMBT5087 OT-23 2N5087 equivalent 2N5087 fairchild 741 2N5086 MMBT5086 MMBT5087 2n5087 fairchild PDF

    SOT-23 MARK 2Q

    Abstract: BEL 167 transistor transistor k 2541 2N5086 2N5087 CBVK741B019 F63TNR MMBT5086 MMBT5087 PN2222N
    Text: 2N5086 / MMBT5086 / 2N5087 / MMBT5087 2N5086 2N5087 MMBT5086 MMBT5087 C E C B TO-92 SOT-23 E B Mark: 2P / 2Q PNP General Purpose Amplifier This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50 mA.


    Original     		2N5086 MMBT5086 2N5087 MMBT5087 2N5086 2N5087 MMBT5086 OT-23 SOT-23 MARK 2Q BEL 167 transistor transistor k 2541 CBVK741B019 F63TNR MMBT5087 PN2222N PDF

    2NS087

    Abstract: 2N5087 NATIONAL SEMICONDUCTOR 2NS086 2N5086 2N5087 MMBT5086 MMBT5087 T092 0013581
    Text: 2N5086 / MMBT508612N50871 MMBT5087 Discrete POWER & Sign al Technologies _ Na tional Semiconductor~ 2N5086 2N5087 MMBT5086 MMBT5087 PNP General Purpose Amplifier T h is d evice is d esigned fo r low level, high gain, low noise general p u rp o s e a m p lifie r a p p lic a tio n s a t c o lle c to r c u rre n ts to 50 mA.


    OCR Scan     		2N5086 2N5087 MMBT5086 MMBT5087 OT-23 b501130 bSD113D 2NS087 2N5087 NATIONAL SEMICONDUCTOR 2NS086 2N5087 MMBT5087 T092 0013581 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC MMBT5086 14E D I 0007573 M | PNP EPITAXIAL SILICON TRANSISTOR LOW NOISE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltape Emitter-Base Voltage Collector Current Collector Dissipation


    OCR Scan     		MMBT5086 OT-23 PDF

    2n5087

    Abstract: 2N5086 BT5086 2N5087 equivalent
    Text: S E M IC O N D U C T O R tm 2N5086 2N5087 MMBT5086 MMBT5087 SOT-23 Mark: 2P/2Q PNP General Purpose Amplifier T his device is designed for low level, high gain, low noise general purpose am p lifier a p p lica tio ns at co lle cto r currents to 50 mA. Sourced from Process 62.


    OCR Scan     		2N5086 MMBT5086 2N5087 MMBT5087 2N5087 OT-23 BT5086 2N5087 equivalent PDF

    MMBT5086

    Abstract: ALI03 Transistor marking S PNP marking VA sot-23
    Text: SAMSUNG S EM I C ONDU C T OR INC MMBT5086 14E D I 0007573 M | PNP EPITAXIAL SILICON TRANSISTOR LOW NOISE TRANSISTOR SO T-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltape Emitter-Base Voltage Collector Current


    OCR Scan     		MMBT5086 OT-23 10OfiA ALI03 Transistor marking S PNP marking VA sot-23 PDF

    SOT-23 MARK 2Q

    Abstract: BF254 sot-23 transistor p2 marking
    Text: 2N5086 / MMBT5086 / 2N5087 / MMBT5087 2N5086 2N5087 MMBT5086 MMBT5087 C E C B TO-92 SOT-23 E B Mark: 2P / 2Q PNP General Purpose Amplifier This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50 mA.


    Original     		2N5086 MMBT5086 2N5087 MMBT5087 2N5087 OT-23 2N5087BU SOT-23 MARK 2Q BF254 sot-23 transistor p2 marking PDF

    Untitled

    Abstract: No abstract text available
    Text: SEM ICONDUCTOR tm 2N5086 2N5087 MMBT5086 MMBT5087 Mark: 2 P / 2 Q PNP General Purpose Amplifier This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50 mA. Sourced from Process 62. Absolute Maximum RatinQS


    OCR Scan     		2N5086 2N5087 MMBT5086 MMBT5087 2N5086 MMBT5086 2N5087 PDF

    MMBT6428

    Abstract: mmbth10 KST2484 KST5086 KST5088 KST5089 KST6428 MMBT2484 MMBT5086 MMBT5088
    Text: Surface Mount Low Noise Transistors Part No., Marking Code and Polarity NPN hFE NF Max. Condition Frequency PNP dB MMBT6428 KST6428 MMBT6429 MMBT2484 KST2484 MMBT5088 KST5088 MMBT5089 KST5089 1K 1K 1L 1U 1U 1Q 1Q 1R 1R MMBT5086 KST5086 MMBT5087 TMPT5087


    Original     		MMBT6428 KST6428 MMBT6429 MMBT2484 KST2484 MMBT5088 KST5088 MMBT5089 KST5089 MMBT5086 MMBT6428 mmbth10 KST2484 KST5086 KST5088 KST5089 KST6428 MMBT2484 MMBT5086 MMBT5088 PDF

    2N50B

    Abstract: 2N5086 2N5087 2N50B7 2N5087 NATIONAL SEMICONDUCTOR
    Text: 2N5086/MMBT5086/2N5087/MMBT5087 a National Semiconductor MMBT5086 MMBT5087 2N5086 2N5087 T O -9 2 T L /G /1 0 1 0 0 -5 T L /G /1 0 1 0 0 -1 PNP General Purpose Amplifier Electrical Characteristics Ta Symbol = 25°C unless otherwise noted Parameter Min Max


    OCR Scan     		2N5086/MMBT5086/2N5087/MMBT5087 2N5086 2N5087 MMBT5086 MMBT5087 2N50B7 2N5087 2N50B 2N5087 NATIONAL SEMICONDUCTOR PDF

    2N5087 equivalent

    Abstract: 2N5086 2N5087 MMBT5086 MMBT5087 2N5087 NATIONAL SEMICONDUCTOR 2NS087
    Text: 2N5086 / MMBT5086 1 2N5087 I MMBT5087 Discrete POWER & Sign al Technologies National f i Semiconductor" MMBT5086 MMBT5087 2N5086 2N5087 SOT-23 Mark: 2P/2Q PNP General Purpose Amplifier This device is designed for low level, high gain, low noise general purpose am plifier applications at collector currents to 50 mA.


    OCR Scan     		2N5086 MMBT5086 2N5087 MMBT5087 2N5087 OT-23 LS01130 2N5087 equivalent MMBT5087 2N5087 NATIONAL SEMICONDUCTOR 2NS087 PDF

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR BCX71G GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature Symbol


    OCR Scan     		BCX71G OT-23 MMBT5086 PDF

    it4142

    Abstract: it414 BCX71H MMBT5086
    Text: S A MS UN G SE MIC OND UCT OR INC BCX71H IME D | 0GQ7225 M | PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current


    OCR Scan     		t4142 BCX71H MMBT5086 OT-23 it4142 it414 PDF

    2SA1020Y

    Abstract: 2SA1015LY 2SA10150 2SA1015L-Y 2SA10200 2SA12130 2SA661 TEC9015 2SA705 2SA1015L
    Text: LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 Manufacturer Y(BR)CEO hFE Ie Max A fT (Hz) 50 50 50 50 50 50 50 50 50 50 100 100 100 100 100 100 100 100 100 120 2SA1326 TEDl602C NB122EH NB122FH


    Original     		TEC9015B 2SA661 2SB1002 2SB1059 2SB740 BFT71 BFT81 2SA493G 2SA1020Y 2SA1015LY 2SA10150 2SA1015L-Y 2SA10200 2SA12130 TEC9015 2SA705 2SA1015L PDF

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


    Original     		OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes PDF

    Bt 35 F transistor

    Abstract: Bt 35 transistor
    Text: DE^t.3L,72S4 0 D Ô E D 4 7 3 | ~ M O T O R O L A SC Í X S T R S / R FD6367254 ’ -V * MOTOROLA SC XSTRS/R 96D F i . 82047 R ating Sym bol V alu e v CEO 50 Vdc C o lle ctor-B ase V olta g e V cB O 50 Vdc Em itter-B ase V oltag e VebO 3.0 Vdc ic 50 m Adc


    OCR Scan     		FD6367254 MMBT5086 MMBT5087 OT-23 O-236AA/AB) Bt 35 F transistor Bt 35 transistor PDF

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


    OCR Scan     		OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C PDF

    PNP 3-224

    Abstract: NPN Transistor PN100A 2N3906 Darlington transistor 2n3904 TRANSISTOR PNP PNP 2N3904 TRANSISTOR 3182 2N3906 NPN Transistor PNP switching transistor 2N3906 transistor 338 TN6715A
    Text: Section 3 Bipolar Transistors PN100 / PN100A / MMBT100 / MMBT100A NPN GPA . 3-4 PN200 / PN200A / MMBT200 / MMBT200A PNP GPA . 3-7 FPN330 / FPN330A NPN Low Saturation Transistor . 3-11


    Original     		PN100 PN100A MMBT100 MMBT100A PN200 PN200A MMBT200 MMBT200A FPN330 FPN330A PNP 3-224 NPN Transistor PN100A 2N3906 Darlington transistor 2n3904 TRANSISTOR PNP PNP 2N3904 TRANSISTOR 3182 2N3906 NPN Transistor PNP switching transistor 2N3906 transistor 338 TN6715A PDF

    8F SOT-23 PNP on

    Abstract: 1n4148 5D mark FDH777 mark fq sot 8F SOT23 PNP SOT-23 Mark ZF 1N4148 surface mount NDSJ105 5d surface mount diode BV 9y transistor
    Text: Discrete POWER & Signal Technologies Surface Mount Diodes Computer Diodes by Descending BV LEADLESS GLASS PACKAGE Device No. Package No. BV (V) Min IR (nA) Max @ VR VF (V) (V) Min C trr (mA) (pF) Max (ns) Max 1 10 4 0.72 5 @ Max IF Test Conditions Process


    Original     		FDLL914 LL-34 FDLL914A FDLL914B FDLL916 FDLL916A 8F SOT-23 PNP on 1n4148 5D mark FDH777 mark fq sot 8F SOT23 PNP SOT-23 Mark ZF 1N4148 surface mount NDSJ105 5d surface mount diode BV 9y transistor PDF

    MARKING W2 SOT23 TRANSISTOR

    Abstract: MMBA812M3 DO 127
    Text: SAMSUNG S E M I C O N D U C T O R . INC MMBA812M3 1 4 E _.? §7^41*12 0 0 0 7 2 3 5 :1 PNP EPITAXIAL SILICON TRANSISTOR^27 ^ i GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Cotfector-Emltter Voltage


    OCR Scan     		MMBA812M3 OT-23 MMBT5086 MARKING W2 SOT23 TRANSISTOR MMBA812M3 DO 127 PDF

    transistors BC 557C

    Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
    Text: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and


    OCR Scan     		PDF

    6CW 62

    Abstract: BYM 268 6CW 59 CMR1U-02M CMSD4448 DAN202VAK bcw 918 CMPS5064 44H11 S02222
    Text: index/Cross Reference Industry Part Number Central Part Number 10BQ015 CMSH1-20ML CMR1U-02M CMSH1-40M EM 66 10MF2 10MQ040 EM EM 63 66 10MQ060 CMSH1-60M EM 66 1N6478 1N6479 CMR1-02M CMR1-02M EM EM 61 Code Selection Guide Industry Part Number Data Sheet 292


    OCR Scan     		10BQ015 10MF2 10MQ040 10MQ060 1N6478 1N6479 1N6481 1N6482 1N6483 1N6484 6CW 62 BYM 268 6CW 59 CMR1U-02M CMSD4448 DAN202VAK bcw 918 CMPS5064 44H11 S02222 PDF