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    2SA1125 Search Results

    2SA1125 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA1125 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1125 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SA1125 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1125 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1125 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1125 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1125 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SA1125 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1125 Panasonic Si PNP epitaxial planar. AF high voltage amplifier. Scan PDF
    2SA1125 Panasonic Si PNP epitaxial planar. AF high voltage amplifier. Scan PDF
    2SA1125Q Panasonic Silicon PNP Epitaxial Planar Power Transistor Scan PDF
    2SA1125R Panasonic Silicon PNP Epitaxial Planar Power Transistor Scan PDF
    2SA1125S Panasonic Silicon PNP Epitaxial Planar Power Transistor Scan PDF
    2SA1125T Panasonic Silicon PNP Epitaxial Planar Power Transistor Scan PDF

    2SA1125 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SA1125 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)150 I(C) Max. (A)50m Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1u @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V)1 @I(C) (A) (Test Condition)30m


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    PDF 2SA1125 Freq200MÃ q200MÃ

    Untitled

    Abstract: No abstract text available
    Text: 2SA1125T Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)150 I(C) Max. (A)50m Absolute Max. Power Diss. (W)1.5# Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1u @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V)1 @I(C) (A) (Test Condition)30m


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    PDF 2SA1125T Freq200MÃ

    Untitled

    Abstract: No abstract text available
    Text: 2SA1125S Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)150 I(C) Max. (A)50m Absolute Max. Power Diss. (W)1.5# Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1u @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V)1 @I(C) (A) (Test Condition)30m


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    PDF 2SA1125S Freq200MÃ

    Untitled

    Abstract: No abstract text available
    Text: 2SA1125Q Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)150 I(C) Max. (A)50m Absolute Max. Power Diss. (W)1.5# Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1u @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V)1 @I(C) (A) (Test Condition)30m


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    PDF 2SA1125Q Freq200MÃ

    Untitled

    Abstract: No abstract text available
    Text: 2SA1125R Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)150 I(C) Max. (A)50m Absolute Max. Power Diss. (W)1.5# Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1u @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V)1 @I(C) (A) (Test Condition)30m


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    PDF 2SA1125R Freq200MÃ

    2SA1125

    Abstract: 2SC2633
    Text: JMnic Product Specification 2SA1125 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SC2633 ・High breakdown voltage APPLICATIONS ・For audio frequency high voltage amplifier applications PINNING PIN DESCRIPTION 1 Emitter


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    PDF 2SA1125 O-220 2SC2633 O-220) -30mA; -100V; -10mA 2SA1125 2SC2633

    2SC2633

    Abstract: 2SA1125
    Text: SavantIC Semiconductor Product Specification 2SA1125 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC2633 ·High breakdown voltage APPLICATIONS ·For audio frequency high voltage amplifier applications PINNING PIN DESCRIPTION


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    PDF 2SA1125 O-220 2SC2633 O-220) -30mA; -100V; -10mA 2SC2633 2SA1125

    2sa112

    Abstract: 2SA1125 2SC2633
    Text: Inchange Semiconductor Product Specification 2SA1125 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC2633 ·High breakdown voltage APPLICATIONS ·For audio frequency high voltage amplifier applications PINNING PIN DESCRIPTION


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    PDF 2SA1125 O-220 2SC2633 O-220) -30mA; -100V; -10mA 2sa112 2SA1125 2SC2633

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    2SA1370E

    Abstract: 2SA13600 HITACHI AXIAL DIODE diode *7723 BCY77VII
    Text: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 25 30 < 40 45 50 2SA916K 2N4930 2N4931 2N4931S 2N4931S BF723 BF870S TBF870 2N3743 BF721 BF872S TBF872 MRF5211 MRF5211l HA7520 HA7520 HA7521 HA7521 MM4008 -ecY77VIT 55 60 65 70 75 80 BCY77VII BCY77VIII


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    PDF BF470S BF472 BF472S HA7725 HA7734 HA7737 HA7723 2SA1370E 2SA13600 HITACHI AXIAL DIODE diode *7723 BCY77VII

    STk442-130

    Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
    Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components


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    PDF 100-up) STk442-130 M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717

    2SA1108A

    Abstract: 2SA1152 2SA1103, 2SA1104, 2SA1106, 2SA1186, 2SA1187 2SA1136 2SA1126 2sa1144 2SA1154 2SA1108 2SA1104 2SA1184
    Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 60W 2SA1102 -80 -6 -6A 150 80 -4 -2A 20* 150 (Tc=25ºC) 70W 2SA1103


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    PDF 2SA1102 2SA1103 2SA1104 2SA1105 2SA1106 2SA1107 2SA1107A 2SA1108 2SA1108A 2SC2853 2SA1152 2SA1103, 2SA1104, 2SA1106, 2SA1186, 2SA1187 2SA1136 2SA1126 2sa1144 2SA1154 2SA1108 2SA1104 2SA1184

    API 160

    Abstract: 2N4418 2N4889 transtek ha7723 2N4906 MOTOROLA 2N4881 Siliconix 2n4881 2N4947 2SA1370E
    Text: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 25 30 < 40 45 50 2SA916K 2N4930 2N4931 2N4931S 2N4931S BF723 BF870S TBF870 2N3743 BF721 BF872S TBF872 MRF5211 MRF5211l HA7520 HA7520 HA7521 HA7521 MM4008 -ecY77VIT 55 60 65 70 75 80 BCY77VII BCY77VIII


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    PDF BF470S BF472 BF472S HA7725 HA7734 HA7737 HA7723 API 160 2N4418 2N4889 transtek 2N4906 MOTOROLA 2N4881 Siliconix 2n4881 2N4947 2SA1370E

    MN1873287

    Abstract: an6512n 2sk3190 MN171202 mn158413 mn15142 mn187164 mn6740 AN7210 MN15283
    Text: Maintenance and Discontinued Types <Maintenance Types> Maintenance and Discontinued Types This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Discontinued Types>


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    PDF MN101C01C MN15224 MN101C01D MN15226 MN101C027 MN15261 MN101C03A MN101C38A MN15263 MN101C06D MN1873287 an6512n 2sk3190 MN171202 mn158413 mn15142 mn187164 mn6740 AN7210 MN15283

    2SA11

    Abstract: 2SA1125 2SC2633 panasonic FC
    Text: P o w e r T ra n s is to rs 2SC2633 2SC2633 Silicon NPN Epitaxial Planar Type Package Dimensions AF High Voltage Amplifier Complementary Pair with 2SA1125 •Features U n it ! mm 4.8max. 10.5 ± 0 .5 S ,9.8max.» OlT5 m • Good linearity of DC current gain hFE


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    PDF 2SC2633 2SA1125 -2Q-30-50 2SA11 2SA1125 2SC2633 panasonic FC

    2SA1125

    Abstract: 2SA11 2SC2633
    Text: P ow er Tra n sisto rs 2SA1125 2SA1125 Silicon P N P Epitaxial Planar Type A F High Voltage Amplifier Com plem entary Pair with 2SC2633 Package Dim ensions . Unit I mm 10.5 ± 0.5 • Features • Very good linearity of DC c u rre n t gain • High collector-em itter voltage


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    PDF 2SA1125 2SC2633 001bl23 2SA1125 2SA11 2SC2633

    2SC2633

    Abstract: 100 HFK 2SA1125 C46A
    Text: P ow er Tra n sisto rs 2SC2633 2SC2633 Silicon NPN Epitaxial Planar Type Package Dimensions AF High Voltage Amplifier Complementary Pair with 2SA1125 U nit ! mm 10.5 ± 0 .5 • Features 4 .8 m a x . k -» S 9 ,8 m a x . O irs « m • Good linearity of DC current gain (hFE


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    PDF 2SC2633 2SA1125 -2Q-30-50 2SC2633 100 HFK 2SA1125 C46A

    2SC2633

    Abstract: 2SC2590 2SA1110 2SA1125 2SA1254 2SC2206 2SA111 2SA11 CC1216
    Text: PANASONIC INDL/ELEK-CSEPII} h =5yV7S> ' 7SC T 3 D | bT3SflS4 3 I - 7 □□ÔûfiGfi 2 S A in o 2SA1110 y U 3 > P N P x fcf£ ¿ r i s T \s~f\s 2SC2590 fc a y y i j > • If • ■ i~ f î2 /S i P N P Epitaxial Planar Power Amplifier >) /'Complementary Pair with


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    PDF 2SA111Q 2SA1110 2SC2590 2SC2590 -99-i-l 100MHz 2SC2633 2SA1110 2SA1125 2SA1254 2SC2206 2SA111 2SA11 CC1216

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


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    PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    an6512n

    Abstract: mn1225 MN1280 mn6520 MN6130 MN1201A MN6147C MN12C261D MN12C201D MN3107
    Text: <Maintenance Types> This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Scrapped Types> Apart from the inquiry concerning repair parts, we will refrain from taking any counteraction.


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    PDF MN115P MN116P MN1201A MN1201M MN1201S MN1202M MN1204A MN1204B MN1204E MN1204F an6512n mn1225 MN1280 mn6520 MN6130 MN6147C MN12C261D MN12C201D MN3107

    2SC2625

    Abstract: 2SC2558-MA 2SC2559 2SC2559-MA 2SC2624 2SC2626 2sc2562 2SC2585 2sc2592 251C
    Text: - 128 - Ta=25°C,*EDÍSTc=25^> M 2SC2556 £ fâT 2SC2556A 2SC2553-KA B U 2 S C 2 5 5 8 —M A an n nn œ. sn 2SC2559-KA 2SC2559-MA 2SC2562 2SC2570A s 2SC2585 fâ"F B€ 2SC2590 fâT 2SC2582 & £ 2SC2591 2SC2592 fôT 2SC2594 & T 2SC2603 VcBO Vce o (V (V)


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    PDF 01l3Tc 2SC2556 2SC2556A 2SC2558-KA 800MHz 2SC2558-MA 2SC2559-KA 2SC2559-MA 2SC2625 2SC2559 2SC2624 2SC2626 2sc2562 2SC2585 2sc2592 251C

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    MN1280

    Abstract: AN6512 MN15814 MN15245 2Sb1163a mn158413 AN7210 AN7226 MN15287 MN15283
    Text: pes H Maintenance • mos LS Is Type No. Alternative ^ype No. Alternative Type No. - MN6040Z — - MN6049 MN3726FE/AE MN4520B/S MN4521 B/S - — MN3726AE MN4522B/S - MN6063 MN6063A - MN4526B/S - MN6064 - - MN4528B/S — - MN4532B/S MN6064R/S MN61074


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    PDF MN1380 MN13801 MN13802 MN1381 MN13811 MN13812 MN1382 MN13821 MN13822 MN1544 MN1280 AN6512 MN15814 MN15245 2Sb1163a mn158413 AN7210 AN7226 MN15287 MN15283

    HS 153 SP

    Abstract: 2SA1152 2SA1154 2SA1115 G 2sc2681 2sc2720 2SA1138 2sa1151 2sc2592 2SC2719
    Text: - 22 - T a = 2 5 U *EP(iTc=25^ m z m g & VcBO (V) 2SA1077 VCEO (V) Ic(DO (A) (W) % m Pc* Pc & 14 (Ta=25^) , Ic BO »ÜB (V) Itili) W (V) ic/lE (A) [*EP(ítypí l / . . (V) (V) « le (A) Ib (A) SN Reg/DDC/LF PA -120 -120 -10 60 -50 -120 60 200 -5 -1 -1.8


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    PDF 2SA1077 2SA1080 2SA1081 2SA1082 SA1063 150mV O-92JB 2SA1137 2SC2676 2SA1138 HS 153 SP 2SA1152 2SA1154 2SA1115 G 2sc2681 2sc2720 2SA1138 2sa1151 2sc2592 2SC2719