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    2SA120 Price and Stock

    Rochester Electronics LLC

    Rochester Electronics LLC 2SA1208S-AE

    TRANS PNP 160V 0.07A 3-MP
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    DigiKey 2SA1208S-AE Bulk 90,950 2,049
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    2SA1208S-AE Bulk 65,000 2,049
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    Rochester Electronics LLC 2SA1207S-AA

    TRANS PNP 160V 0.07A 3-NP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SA1207S-AA Bulk 83,793 5,323
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    Rochester Electronics LLC 2SA1208T

    TRANS PNP 160V 0.07A 3-MP
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    DigiKey 2SA1208T Bulk 13,324 1,268
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    2SA1208T Bulk 13,000 1,268
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    Rochester Electronics LLC 2SA1207T-AA

    TRANS PNP 160V 0.07A 3-NP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SA1207T-AA Bulk 11,900 2,219
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    Rochester Electronics LLC 2SA1209S

    TRANS PNP 160V 0.14A TO-126
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    DigiKey 2SA1209S Bulk 5,430 833
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    Find more 2SA120 price and stock on Findchips.com

    2SA120 Datasheets (225)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    2SA120 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SA120 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA120 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SA120 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA120 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SA120 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA120 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA120 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA120 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SA1200 Kexin High Voltage Switching Applications Original PDF
    2SA1200 Toshiba PNP transistor Original PDF
    2SA1200 Toshiba TRANS GP BJT PNP 150V 0.05A 3(2-5K1A) Original PDF
    2SA1200 TY Semiconductor High Voltage Switching Applications - SOT-89 Original PDF
    2SA1200 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1200 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SA1200 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1200 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1200 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1200 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SA1200 Toshiba SOT-89 Transistors Scan PDF
    ...

    2SA120 Datasheets Context Search

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    PDF

    LED display module

    Abstract: No abstract text available
    Text: MULTI CHIP TD62M8603F BIPO LAR DIGITAL INTEGRATED CIRCUIT 8CH LOW SATURATION VOLTAGE SOURCE DRIVER TD62M8603F is M ulti Chip 1C incorporates 8 low saturation discrete 2SA1203 transistors. This IC is suitable for a battery use motor drive and LED display module applications.


    OCR Scan     		TD62M8603F TD62M8603F 2SA1203) HSOP16 2SA1203 LED display module PDF

    2SA1201

    Abstract: 2SC2881
    Text: Transistors SMD Type Voltage Amplifier Applications 2SC2881 Features High Voltage : VCEO = 120V High Transition Frequency : fT = 120MHz typ. Small Flat Package Complementary to 2SA1201 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Emitter Voltage


    Original     		2SC2881 120MHz 2SA1201 100mA 500mA 2SA1201 2SC2881 PDF

    2SA1202

    Abstract: 2SC2882
    Text: T O S H IB A 2SA1202 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS PO W ER AM PLIFIER APPLICATIONS Unit in mm VOLTAGE AM PLIFIER APPLICATIONS 1.6MAX. —I— 4.6MAX. • Suitable for driver of 30~35 Watts Audio Amplifier • P q = 1~2W (Mounted on CeramicSubstrate)


    OCR Scan     		2SA1202 2SC2882 PDF

    2SA1205

    Abstract: I3002
    Text: AOK AOK Semiconductor Product Specification 2SA1205 Silicon PNP P o w er Transistors DESCRIPTIO N • W ith TO -3PN package • High power dissipation A PP LIC A TIO N S • For general purpose applications PINNING PIN DESCRIPTION 1 Base o Collector:conr>ected to


    OCR Scan     		2SA1205 Vce-12V OO101 I3002 PDF

    2SC2881L

    Abstract: 032 b
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2881 NPN SILICON TRANSISTOR VOLTAGE AMPLIFIER APPLICATIONS POWER AMPLIFIER APPLICATIONS „ FEATURES 1 * High voltage: VCEO=120V * High transition frequency: fT=120MHz typ. * Complementary to 2SA1201 „ SOT-89 RDERING INFORMATION


    Original     		2SC2881 120MHz 2SA1201 OT-89 2SC2881L-x-AB3-R 2SC2881G-x-AB3-R OT-89 QW-R204-032 QW-R208-032 2SC2881L 032 b PDF

    2SA1204

    Abstract: No abstract text available
    Text: 2SA1204 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1204 Audio Frequency Amplifier Applications • High DC current gain: hFE(1) = 100 to 320 • Suitable for output stage of 1 watts amplifier • Small flat package Unit: mm • PC = 1.0 to 2.0 W (mounted on a ceramic substrate)


    Original     		2SA1204 2SC2884 SC-62 2SA1204 PDF

    2sa1205

    Abstract: 2sa120
    Text: Inchange Semiconductor Product Specification 2SA1205 Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package ·High power dissipation APPLICATIONS ·For general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base


    Original     		2SA1205 T-25mA 2sa1205 2sa120 PDF

    power transistor audio amplifier 500 watts

    Abstract: 2SA1203 smd diode 03A 2SC2883
    Text: Transistors SMD Type Audio Frequency Amplifier Applications 2SA1203 Features Suitable For Output Stage of 3 Watts Amplifier Small Flat Package PC = 1 to 2W mounted on ceramic substrate Complementary to 2SC2883 Absolute Maximum Ratings Ta = 25 Parameter Symbol


    Original     		2SA1203 2SC2883 -10mA -500mA power transistor audio amplifier 500 watts 2SA1203 smd diode 03A 2SC2883 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Product specification 2SA1202 Features Suitable for Driver of 30 to 35 Watts Audio Amplifier Small Flat Package PC = 1 to 2W mounted on ceramic substrate Complementary to 2SC2882 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage


    Original     		2SA1202 2SC2882 -10mA -50mA -200mA -20mA PDF

    2SA1201

    Abstract: 2SC2881
    Text: 2SA1201 シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1201 ○ 電力増幅用 ○ 励振段増幅用 単位: mm • 高耐圧です。 • トランジション周波数が高い。 : fT = 120 MHz (標準) • 小型フラットパッケージでハイブリッド IC 組立て用に適します。


    Original     		2SA1201 2SC2881 SC-62 20070701-JA 2SA1201 2SC2881 PDF

    2SA1201

    Abstract: 2SC2881
    Text: 2SA1201 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1201 Voltage Amplifier Applications Power Amplifier Applications Unit: mm • High voltage: VCEO = −120 V • High transition frequency: fT = 120 MHz (typ.) • Small flat package •


    Original     		2SA1201 2SC2881 2SA1201 2SC2881 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Product specification 2SA1204 Features Suitable For Output Stage of 1 Watts Amplifier Small Flat Package PC = 1 to 2W mounted on ceramic substrate Complementary to 2SC2884 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage


    Original     		2SA1204 2SC2884 -100mA -700mA -500mA -20mA -10mA PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1201 TOSHIBA 2 SA 1 2 0 1 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS High Voltage :V C E O = —120V High Transition Frequency : fr = 120MHz(Typ.) P q = 1—2W (Mounted on Ceramic Substrate) Small Flat Package


    OCR Scan     		2SA1201 120MHz 2SC2881 250mm2 PDF

    S500M

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1200 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2 S A 1 200 HIGH VOLTAGE SWITCHING APPLICATIONS Unit in mm 1.6MAX. 4.6MAX. High Voltage 1.7MAX. : V q e o - - 150V 0.4 ±0.05 High Transition Frequency : fx = 120MHz (Typ.) P q = 1 ~ 2W (Mounted on Ceramic Substrate)


    OCR Scan     		2SA1200 120MHz 2SC2880 S500M PDF

    2SB737

    Abstract: 2SA1015 2SA978 2SA933 2sa1306 2SA933 R 2SA970 2SA1127 2SA1142 2SA929
    Text: - m % tt 2S A 973 « M a n u f. T y p e No. J SANYO tö T 2S A 9 7 7 tö T 2SA1209 2S A 9 7 7 A fé T 2SA1352 = » _ * 2S A 978 2 SA 979 X TOSHIBA NEC 2S A988 2SA1030 2SA1142 2SB648 ± FUJITSU a T & M ATSUSHITA H £ M ITSU BISHI □ — A RO HM 2SA933 2SA1127


    OCR Scan     		2SA1015 2SA988 2SA1030 2SA1127 2SA933 2SA1209 2SA949 2SA1142 2SB648 2SA1352 2SB737 2SA978 2SA933 2sa1306 2SA933 R 2SA970 2SA1127 2SA929 PDF

    2SA1206

    Abstract: No abstract text available
    Text: ST 2SA1206 PNP Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. On special request, these transistors can be manufactured in different pin configurations. Features ․High frequency current gain ․High speed switching


    Original     		2SA1206 100MHz PW350s, 2SA1206 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN779C 2SA1209/2SC2911 No.779C SAHYO PNP/NPN Epitaxial Planar Silicon Transistors 160V/140mA High-Voltage Switching and AF 100W Predriver Applications i Features • A d o p tio n o f F B E T process • High breakdown voltage • G ood linearity o f h F E and small C o b


    OCR Scan     		EN779C 2SA1209/2SC2911 60V/140mA 2SC2911 2SA1209/2SC22911 PDF

    SOT-89

    Abstract: 2SA1201
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SA1201 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM : 500 1 mW (Tamb=25℃) 2 3. EMITTER Collector current : -800 mA ICM Collector-base voltage


    Original     		OT-89 2SA1201 OT-89 -10mA, -120V, -100mA -500mA, -50mA -500mA SOT-89 2SA1201 PDF

    2SA1201

    Abstract: 2SC2881 A1201
    Text: TOSHIBA 2SA1201 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS High Voltage SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 201 Unit in mm 1.6MAX. 4.6MAX. : V q e O = —120V 1.7MAX. High Transition Frequency : fp = 120MHz (Typ.) 0.4 + 0.05 P q = 1 ~ 2W (Mounted on Ceramic Substrate)


    OCR Scan     		2SA1201 --120V 120MHz 2SC2881 961001EAA2' 2SA1201 2SC2881 A1201 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SC2884 TRANSISTOR NPN 1. BASE FEATURES z Small Flat Package z Complementary to 2SA1204 z High DC Current Gain 2. COLLECTOR 3. EMITTER APPLICATIONS z Audio Frequency Amplifier


    Original     		OT-89-3L OT-89-3L 2SC2884 2SA1204 100mA 700mA 500mA PDF

    2SA1202

    Abstract: 2SC2882
    Text: 2SA1202 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1202 Power Amplifier Applications Voltage Amplifier Applications Unit: mm • Suitable for driver of 30 to 35 watts audio amplifier · Small flat package · PC = 1.0 to 2.0 W (mounted on ceramic substrate)


    Original     		2SA1202 2SC2882 2SA1202 2SC2882 PDF

    2SA1208

    Abstract: No abstract text available
    Text: Ordering number: EN 7 8 1 F 2SA1208/2SC2910 No.781F PNP/NPN Epitaxial Planar Silicon Transistors High-Voltage Switching, Audio 80W Output Predriver Applications F eatu res •Adoption of FB E T process. . High breakdown voltage. ■Excellent linearity of hEE and small c0b.


    OCR Scan     		2SA1208/2SC2910 2SA1208 8270MH/6080MO/3187AT/3125KI/0193KI 2SA1208 PDF

    Untitled

    Abstract: No abstract text available
    Text: , U na. I Cx c/ TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor 2SA1205 DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEo= -50V(Min) • Low Collector Saturation Voltage: VCE(sat)= -0.5V(Max.)@ lc= -5A


    Original     		2SA1205 -25mA; -012A PDF

    2SA1204

    Abstract: 2SC2884 A1204 TA155
    Text: TOSHIBA 2SA1204 2 S A 1 204 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY AM PLIFIER APPLICATIONS High DC Current Gain : hEE = 100~320 Suitable for Output Stage of 1 Watts Amplifier P q = 1 ~ 2W (Mounted on Ceramic Substrate)


    OCR Scan     		2SA1204 2SC2884 961001EAA2' 2SA1204 2SC2884 A1204 TA155 PDF