2SA139 Search Results

2SA139 Result Highlights (3)

Part	Manufacturer	Description
2SA1394-AZ	Renesas Electronics Corporation	Bipolar Power Transistors, , /
2SA1396-AZ	Renesas Electronics Corporation	Bipolar Power Transistors, , /
2SA1395-AZ	Renesas Electronics Corporation	Bipolar Power Transistors, , /

2SA139 Price and Stock

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Rochester Electronics LLC 2SA1391S PNP SILICON TRANSISTOR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SA1391S	Bulk			3,806	1 - 10 - 100 - 1000 - 10000 $0.08	Buy Now
Rochester Electronics LLC 2SA1395-AZ POWER BIPOLAR TRANSISTOR, PNP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SA1395-AZ	Bulk			406	1 - 10 - 100 - 1000 $0.74 10000 $0.74	Buy Now
Rochester Electronics LLC 2SA1392S-AA PNP SILICON TRANSISTOR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SA1392S-AA	Bulk			2,219	1 - 10 - 100 - 1000 - 10000 $0.14	Buy Now
	2SA1392S-AA	Bulk			2,219	1 - 10 - 100 - 1000 - 10000 $0.14	Buy Now
onsemi 2SA1392S-AA - Ammo Pack (Alt: 2SA1392S-AA)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	2SA1392S-AA	Ammo Pack		4 Weeks	2,671	1 - 10 - 100 - 1000 - 10000 $0.13104	Buy Now
Rochester Electronics	2SA1392S-AA		18,000		1	1 $0.1365 10 $0.1365 100 $0.1283 1000 $0.116 10000 $0.116	Buy Now
onsemi 2SA1391S - Bulk (Alt: 2SA1391S)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	2SA1391S	Bulk		4 Weeks	4,579	1 - 10 - 100 - 1000 - 10000 $0.07644	Buy Now
Rochester Electronics	2SA1391S		12,000		1	1 $0.0796 10 $0.0796 100 $0.0748 1000 $0.0677 10000 $0.0677	Buy Now

Find more 2SA139 price and stock on Findchips.com

2SA139 Datasheets (134)

Part	Manufacturer	Description	Datasheet Type	PDF
2SA139	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SA139	Unknown	The Japanese Transistor Manual 1981	Scan	PDF
2SA139	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2SA139	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SA1390	Hitachi Semiconductor	Silicon PNP Epitaxial	Original	PDF
2SA1390	Renesas Technology	Silicon PNP Epitaxial Transistor	Original	PDF
2SA1390	Renesas Technology	Silicon PNP Epitaxial	Original	PDF
2SA1390	Renesas Technology	Silicon PNP Epitaxial	Original	PDF
2SA1390	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
2SA1390	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SA1390	Unknown	PNP Silicon Transistor	Scan	PDF
2SA1390	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SA1390	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SA1390	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF

2SA1390	Unknown	Cross Reference Datasheet	Scan	PDF
2SA1390B	Hitachi Semiconductor	TRANS GP BJT PNP 35V 0.5A 3SPAK	Original	PDF
2SA1390B	Renesas Technology	Silicon PNP Epitaxial	Original	PDF
2SA1390C	Hitachi Semiconductor	TRANS GP BJT PNP 35V 0.5A 3SPAK	Original	PDF
2SA1390C	Renesas Technology	Silicon PNP Epitaxial	Original	PDF
2SA1390D	Hitachi Semiconductor	TRANS GP BJT PNP 35V 0.5A 3SPAK	Original	PDF

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2SA139 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SC3383 Abstract: 2SA1392 ITR03393 ITR03394 ITR03395 Text: Ordering number:ENN1943B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1392/2SC3383 AF Amp Applications Features Package Dimensions • Adoption of FBET process. · AF amp. unit:mm 2003B [2SA1392/2SC3383] 5.0 4.0 5.0 4.0 0.6 2.0 0.45 0.5 0.44 14.0 0.45 1	Original	PDF	ENN1943B 2SA1392/2SC3383 2003B 2SA1392/2SC3383] 2SA1392 2SC3383 2SA1392 ITR03393 ITR03394 ITR03395
Hitachi DSA0076 Abstract: 2SA1390 2SA673 Text: 2SA1390 Silicon PNP Epitaxial ADE-208-1017 Z 1st. Edition Mar. 2001 Application Low frequency amplifier Outline SPAK 1 23 1. Emitter 2. Collector 3. Base 2SA1390 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO	Original	PDF	2SA1390 ADE-208-1017 Hitachi DSA0076 2SA1390 2SA673
B0530 Abstract: MPSU57 motorola 2SA958 2N2882 ppc power transistor Text: POWER SILICON PNP Item Part Number Number I C 5 10 >= 20 SOT69504 SOT69604 SOT69604 SOT3504 SOT3504 SOT3504 SOT3512 SOT3512 ~~~ggJ2 25 30 2N6180 2SA1008 2SA1395M B03700 B03700 B03720 B03720 SOT69512 ~~+~~~~~ 35 40 SOT69612 MM5007 NSOU57 SOT3508 SOT3508 SOT3508	Original	PDF	RCA1A04 SML69604 SML69612 SML3504 SML3508 SML3512 SML3516 2N2882 2N3207 BLX41 B0530 MPSU57 motorola 2SA958 ppc power transistor
2SA1392 Abstract: No abstract text available Text: Ordering number:EN1943A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1392/2SC3383 AF Amp Applications Features Package Dimensions • Adoption of FBET process. · AF amp. unit:mm 2003A [2SA1392/2SC3383] JEDEC : TO-92 EIAJ : SC-43 SANYO : NF : 2SA1392	Original	PDF	EN1943A 2SA1392/2SC3383 2SA1392/2SC3383] SC-43 2SA1392 2SA1392
2SA1392 Abstract: 2SC3383 ITR03393 ITR03394 ITR03395 ITR03396 Text: 2SA1392 / 2SC3383 注文コード No. N 1 9 4 3 C 三洋半導体データシート半導体ニューズ No.N1943A をさしかえてください。 2SA1392 / 2SC3383 PNP / NPN エピタキシァルプレーナ型シリコントランジスタ低周波一般増幅用	Original	PDF	2SA1392 2SC3383 N1943A 2SA1392 100mA, --400mA ITR03407 2SC3383 ITR03393 ITR03394 ITR03395 ITR03396
Untitled Abstract: No abstract text available Text: 2SA1394L Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)80 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	PDF	2SA1394L
Untitled Abstract: No abstract text available Text: 2SA1392U Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)200m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain.280 h(FE) Max. Current gain.560	Original	PDF	2SA1392U Freq200M
Untitled Abstract: No abstract text available Text: 2SA1392 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)200m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain.100 h(FE) Max. Current gain.560	Original	PDF	2SA1392 Freq200M
DC to DC converter 5v to 100V Abstract: 2SA1396 2SC3568 5V 5A voltage regulator Text: JMnic Product Specification 2SA1396 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SC3568 ・Low collector saturation voltage ・High switching speed APPLICATIONS ・Switching regulator ・DC-DC converter ・High frequency power amplifier	Original	PDF	2SA1396 O-220Fa 2SC3568 VCC50V DC to DC converter 5v to 100V 2SA1396 2SC3568 5V 5A voltage regulator
Hitachi DSA002754 Abstract: No abstract text available Text: 2SA1390 Silicon PNP Epitaxial Application Low frequency amplifier Outline 2SA1390 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO –35 V Collector to emitter voltage VCEO –35 V Emitter to base voltage VEBO –4	Original	PDF	2SA1390 Hitachi DSA002754
2SC3568 Abstract: VCE-100V 2SA1396 DC to DC converter 5v to 100V Text: SavantIC Semiconductor Product Specification 2SA1396 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Complement to type 2SC3568 ·Low collector saturation voltage ·High switching speed APPLICATIONS ·Switching regulator ·DC-DC converter	Original	PDF	2SA1396 O-220Fa 2SC3568 VCCB50V 2SC3568 VCE-100V 2SA1396 DC to DC converter 5v to 100V
2SC3382 Abstract: 2SA1391 Text: Ordering number:EN1942A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1391/2SC3382 Low Noise AF Amp Applications Features Package Dimensions • Adoption of FBET process. · AF amp. · Low-noise use. unit:mm 2003A [2SA1391/2SC3382] Noise Test Circuit JEDEC : TO-92	Original	PDF	EN1942A 2SA1391/2SC3382 2SA1391/2SC3382] SC-43 2SA1391 2SC3382 2SA1391
2SA1391 Abstract: 2SC3382 ITR03367 ITR03368 ITR03369 Text: 2SA1391 / 2SC3382 Ordering number : EN1942B SANYO Semiconductors DATA SHEET 2SA1391 / 2SC3382 PNP / NPN Epitaxial Planar Silicon Transistors Low Noise AF Amp Applications Features • • • Adoption of FBET process. AF amp. Low-noise use. Specifications : 2SA1391	Original	PDF	2SA1391 2SC3382 EN1942B 2SA1391 2SC3382 ITR03367 ITR03368 ITR03369
2sa1395 Abstract: DC to DC converter 5v to 100V 2SC3567 Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1395 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.6V(Max)@ IC= -1A ·High Switching Speed ·Complement to Type 2SC3567 APPLICATIONS ·Designed for switching regulator, DC-DC converter and	Original	PDF	2SA1395 2SC3567 -100V -100V; VCC-50V 2sa1395 DC to DC converter 5v to 100V 2SC3567

Untitled Abstract: No abstract text available Text: 2SA1395 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)15 Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	PDF	2SA1395
Untitled Abstract: No abstract text available Text: 2SA1395M Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	PDF	2SA1395M
Untitled Abstract: No abstract text available Text: 2SA1392R Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)200m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain.100 h(FE) Max. Current gain.200	Original	PDF	2SA1392R Freq200M
Untitled Abstract: No abstract text available Text: 2SA1392T Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)200m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain.200 h(FE) Max. Current gain.400	Original	PDF	2SA1392T Freq200M
Untitled Abstract: No abstract text available Text: 2SA1392S Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)200m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain.140 h(FE) Max. Current gain.280	Original	PDF	2SA1392S Freq200M
2SA1396 Abstract: 2sa139 2SC3568 K 4080 Text: Inchange Semiconductor Product Specification 2SA1396 Silicon PNP Power Transistors • DESCRIPTION ·With TO-220Fa package ·Complement to type 2SC3568 ·Low collector saturation voltage ·High switching speed APPLICATIONS ·Switching regulator ·DC-DC converter	Original	PDF	2SA1396 O-220Fa 2SC3568 VCC50V 2SA1396 2sa139 2SC3568 K 4080
SC3383 Abstract: 1943a 2SC3383 2SA1392 Text: Ordering number: EN 1 9 4 3 A i i SAXYO I 2SA1392/2SC3383 N0.1943A PNP/ NPN Epitaxial Planar Silicon Transistors AF Amp Applications Features . Adoption of FBET process . AF amp : 2SA1392 Absolute M a x i m a Ratings at Ta=25°C Collector to Base Voltage	OCR Scan	PDF	2SA1392/2SC3383 2SA1392 SC3383 1943a 2SC3383
2SC3382 Abstract: A1391 2SA1391 C338 13 560 KDK SC3382 Text: Ordering number: EN 1 9 4 2 A iSAXYO 2SA1391/2SC3382 N0.1942A PNP/ NPN Epitaxial Planar Silicon Transistors i Low-Noise AF Amp Applications Features . Adoption of FBET process . AF amp . Low-noise use ; 2SA1391 Absolute Maximum Ratings at Ta=25°C Collector to Base Voltage	OCR Scan	PDF	l942A 2SA1391/2SC3382 2SA1391 2SC3382 A1391 C338 13 560 KDK SC3382
toshiba 2SB755 Abstract: 2SAB12 2SB755 2SB681 TOSHIBA 2SB681 2SB700b 2SA818 2SA1181 2SB756 2SB 731 Text: 50 - m. € £ Type No. 2SB 698 - Manuf. n = SANYO M. 2SA950 2SA952 2SA1232 * B ÍL 2SB817 2SB 700 - B ÍI 2SB817 2SB755 2SB 700A B AL 2SB817 2SB755 B ÍL 2SB755 B ÍL 2SB756 2SB 703 , 2SB 703A 2SB 705 2SB 710 tö T MATSUSHITA 2SA719 & — MITSUBISHI 2SA1398	OCR Scan	PDF	2SA950 2SA952 2SB561 2SA719 2SA1398 2SA1515 2SB817 2SB817 2SB755 2SA1232 toshiba 2SB755 2SAB12 2SB681 TOSHIBA 2SB681 2SB700b 2SA818 2SA1181 2SB756 2SB 731
Untitled Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1399 FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1399 is a silicon PNP epitaxial type transistor designed with high OUTLINE DRAWING ¿5.1 MAX	OCR Scan	PDF	2SA1399 2SA1399 2SC3581. 600mA 150MHztyp

2SA139 Search Results

2SA139 Result Highlights (3)

2SA139 Price and Stock

Rochester Electronics LLC 2SA1391S

Rochester Electronics LLC 2SA1395-AZ

Rochester Electronics LLC 2SA1392S-AA

onsemi 2SA1392S-AA

onsemi 2SA1391S

2SA139 Datasheets (134)

2SA139 Datasheets Context Search

2SC3383

Hitachi DSA0076

B0530

2SA1392

2SA1392

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DC to DC converter 5v to 100V

Hitachi DSA002754

2SC3568

2SC3382

2SA1391

2sa1395

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Untitled

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Untitled

2SA1396

SC3383

2SC3382

toshiba 2SB755

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