A1452A
Abstract: 2SA1452A 2SC3710A
Text: 2SA1452A 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1452A ○ 大電流スイッチング用 • 単位: mm コレクタ飽和電圧が低い。: VCE (sat) = −0.4 V (最大) (IC = −6 A) • スイッチング時間が速い。: tstg = 1.0 s (標準)
|
Original
|
2SA1452A
2SC3710A
2-10R1A
20070701-JA
A1452A
2SA1452A
2SC3710A
|
PDF
|
c3710a
Abstract: 2SC3710A C371 2SA1452A
Text: 2SC3710A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3710A High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SA1452A
|
Original
|
2SC3710A
2SA1452A
c3710a
2SC3710A
C371
2SA1452A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SC3710A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3710A High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SA1452A
|
Original
|
2SC3710A
2SA1452A
2-10R1A
|
PDF
|
A1452A
Abstract: 2sa1452a A1452 2SC3710A
Text: 2SA1452A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1452A High-Speed, High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −6 A) • High-speed switching: tstg = 1.0 µs (typ.)
|
Original
|
2SA1452A
2SC3710A
A1452A
2sa1452a
A1452
2SC3710A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SC3710A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3710A High-Power Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 s (typ.) • Complementary to 2SA1452A
|
Original
|
2SC3710A
2SA1452A
2-10R1A
|
PDF
|
A1452
Abstract: A1452A 2SA1452A 2SC3710A A-1452
Text: 2SA1452A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1452A High-Speed, High-Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −6 A) • High-speed switching: tstg = 1.0 s (typ.)
|
Original
|
2SA1452A
2SC3710A
A1452
A1452A
2SA1452A
2SC3710A
A-1452
|
PDF
|
c3710a
Abstract: 2SA1452A 2SC3710A
Text: 2SC3710A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3710A High-Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 s (typ.) • Complementary to 2SA1452A
|
Original
|
2SC3710A
2SA1452A
c3710a
2SA1452A
2SC3710A
|
PDF
|
A1452A
Abstract: No abstract text available
Text: 2SA1452A TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1452A High-Speed, High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −6 A) • High-speed switching: tstg = 1.0 µs (typ.)
|
Original
|
2SA1452A
2SC3710A
2-10R1A
A1452A
|
PDF
|
2N7058
Abstract: ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066
Text: STI Type: VNL005A Notes: Breakdown Voltage: 350 Continuous Current: 25 RDS on Ohm: .20 Trans Conductance Mhos: 10 Trans Conductance A: 10 Gate Threshold min: 2.0 Gate Threshold max: 5.0 Resistance Switching ton: 60 Resistance Switching toff: 180 Resistance Switching ID: 20
|
Original
|
VNL005A
O-204AA/TO-3
VNM006A
VNM005A
2N1717
2N1890
O-205AD/TO-39
2N7058
ytf830
2N7057
2N769
YTF840
2n1565
VNP006A
VNM005A
2SA1091
2N7066
|
PDF
|
GT30F131
Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
|
Original
|
SCE0004L
TTC4116*
2SC4118
TTA1586*
2SA1588
2SC4117
2SA1587
2SC5233
2SC4738
2SA1832
GT30F131
GT30F124
TK18A60V
smd m5 transistor 6-pin
SMD TRANSISTOR H2A NPN
GT50N322
MARKING SMD PNP TRANSISTOR h2a
GT30J124
*30f124
TPCP8R01
|
PDF
|
IGBT GT30F124
Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ
|
Original
|
SCJ0004R
SC-43)
2SC1815
2SC732TM
2SC1959
2SA1015
2SC2240
2SA970
2SC1815
2SA1015
IGBT GT30F124
IGBT GT30J124
GT30F124
GT30J124
GT50N322
tk25e06k3
TPCP8R01
TK12A10K3
GT30G124
2SK3075
|
PDF
|
2sC5200, 2SA1943
Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
Text: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current
|
Original
|
BCE0016D
2sC5200, 2SA1943
2SA1941 equivalent
2SC5353 equivalent
2sc5198 equivalent
amplifier circuit using 2sa1943 and 2sc5200
2SC2383 equivalent
tpcp8l01
2SA1962 equivalent
2SC4793 2sa1837
2sA1013 equivalent
|
PDF
|
smd transistor h2a
Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output
|
Original
|
BCE0016C
E-28831
BCE0016D
smd transistor h2a
SMD TRANSISTOR H2A NPN
transistor smd H2A
2sa1943 amplifier circuit diagram
TPCP8L01
2sC5200, 2SA1943
H2A transistor SMD
2sc5200 power amplifiers diagram
MARKING SMD PNP TRANSISTOR h2a
SMD H2A
|
PDF
|
GT30F124
Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
|
Original
|
2010/9SCE0004K
SC-43)
2SC1815
700the
GT30F124
TPCP8R01
GT30J124
JAPANESE 2SC TRANSISTOR 2010
smd transistor h2a
smd marking 8L01
tk25e06k3
GT45F122
gt30g124
GT30F123
|
PDF
|
|
|
2SA1941 amp circuit
Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including
|
Original
|
BCE0016F
2SA1941 amp circuit
2SC3303
2SD880
TO3P package
2SA114
smd transistor h2a
2sb834
amplifier circuit using 2sa1943 and 2sc5200
TOSHIBA BIPOLAR POWER TRANSISTOR
amplifier design tta1943
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SA1452A 2SA1452A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS • • • Low Collector Saturation Voltage : VCE (sat)= -0 .4 V (Max.) (at I c = -6 A ) High Speed Switching Time : ts^g= 1 .0 / j s (Typ.)
|
OCR Scan
|
2SA1452A
2SC3710A
|
PDF
|
2SA1452A
Abstract: 2SC3710A
Text: TOSHIBA 2SA1452A TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1452A HIGH SPEED, HIGH CURRENT SW ITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm Low Collector Saturation Voltage r 2 '^ " 0 : VCE (sat)= - 0 .4 V (Max.) (at Iq = - 6 A )
|
OCR Scan
|
2SA1452A
2SC3710A
2SA1452A
2SC3710A
|
PDF
|
2SA1452A
Abstract: 2SC3710A
Text: 2SC3710A TO SHIBA 2SC3710A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SWITCHING APPLICATIONS • • Low Collector Saturation Voltage : V qe (sat)= 0.4V (Max.) High Speed Switching Time : tstg=1.0/¿s (Typ.) Complementary to 2SA1452A
|
OCR Scan
|
2SC3710A
2SA1452A
2SA1452A
2SC3710A
|
PDF
|
2SA1452A
Abstract: 2SC3710A
Text: 2SA1452A TO SH IBA 2SA1452A SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS 10 ±0.3 ^3.2 ± 0.2 -y 5 < tY' o o 2.7±Q 2 of ml +1 in 1.1 1.1 0.75 ±0.15 MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC
|
OCR Scan
|
2SA1452A
2SC3710A
2SA1452A
2SC3710A
|
PDF
|
2SC3710A
Abstract: 2SA1452A
Text: TO SH IBA 2SC3710A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3710A HIGH CURRENT SWITCHING APPLICATIONS Unit in mm • Low Collector Saturation Voltage : V^g 0.4V (Max.) • High Speed Switching Time : tgtg^l.O/^s (Typ.) • Complementary to 2SA1452A
|
OCR Scan
|
2SC3710A
2SA1452A
2SC3710A
2SA1452A
|
PDF
|
2SA1452A
Abstract: 2SC3710A s2555
Text: 2SA1452A TO SH IBA 2SA1452A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm Low Collector Saturation Voltage . , .x — n a \ t 10 ±0.3 t^ , — • vuiii (sat)- '“'•rrv v"iaA^ van •
|
OCR Scan
|
2SA1452A
2SC3710A
2SA1452A
2SC3710A
s2555
|
PDF
|
IR-1U
Abstract: No abstract text available
Text: TOSHIBA 2SA1452A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS Low Collector Saturation Voltage • V qe (sat)“ —0.4V (Max.) (at Ic = - 6A) High Speed Switching Time : tgtg^l.O^siTyp.)
|
OCR Scan
|
2SA1452A
2SC3710A
IR-1U
|
PDF
|
2SA1452A
Abstract: 2SC3710A
Text: TO S H IB A 2SA1452A 2SA1452A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS • • • INDUSTRIAL APPLICATIONS Unit in mm Low Collector Saturation Voltage : VCE (sat)= -0 .4 V (Max.) (at I c = —6A)
|
OCR Scan
|
2SA1452A
2SC3710A
2SA1452A
2SC3710A
|
PDF
|
10f150
Abstract: 2SA1452A 2SC3710A
Text: TO SH IBA 2SC3710A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3710A HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm • Low Collector Saturation Voltage : V^g 0.4V (Max.) • High Speed Switching Time : tgtg^l.O/^s (Typ.)
|
OCR Scan
|
2SC3710A
2SA1452A
10f150
2SA1452A
2SC3710A
|
PDF
|
