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c3710a Abstract: 2SC3710A C371 2SA1452A Text: C3710A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process C3710A High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SA1452A	Original	2SC3710A 2SA1452A c3710a 2SC3710A C371 2SA1452A	PDF
Untitled Abstract: No abstract text available Text: C3710A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process C3710A High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SA1452A	Original	2SC3710A 2SA1452A 2-10R1A	PDF
Untitled Abstract: No abstract text available Text: C3710A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process C3710A High-Power Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 s (typ.) • Complementary to 2SA1452A	Original	2SC3710A 2SA1452A 2-10R1A	PDF
C3710A Abstract: 2SA1452A 2SC3710A Text: C3710A シリコンNPNエピタキシャル形 PCT方式東芝トランジスタ C3710A 通信工業用 ○ 大電力スイッチング用 • 単位: mm コレクタ飽和電圧が低い。: VCE (sat) = 0.4 V (最大) (IC = 6 A) • スイッチング時間が速い。: tstg = 1.0 s (標準)	Original	2SC3710A 2SA1452A 2-10R1A C3710A 2SA1452A 2SC3710A	PDF
c3710a Abstract: 2SA1452A 2SC3710A Text: C3710A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process C3710A High-Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 s (typ.) • Complementary to 2SA1452A	Original	2SC3710A 2SA1452A c3710a 2SA1452A 2SC3710A	PDF