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    2SA162 Search Results

    2SA162 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SA1627-T-AZ Renesas Electronics Corporation Bipolar Power Transistors, , / Visit Renesas Electronics Corporation
    2SA1627-AZ Renesas Electronics Corporation Bipolar Power Transistors, , / Visit Renesas Electronics Corporation
    2SA1626-AZ Renesas Electronics Corporation Bipolar Power Transistors, , / Visit Renesas Electronics Corporation
    2SA1626-T-AZ Renesas Electronics Corporation Bipolar Power Transistors, , / Visit Renesas Electronics Corporation
    2SA1625-FD-AZ Renesas Electronics Corporation Bipolar Power Transistors Visit Renesas Electronics Corporation
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    2SA162 Price and Stock

    Rochester Electronics LLC 2SA1624E-AA

    PNP EPITAXIAL PLANAR SILICON
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    DigiKey 2SA1624E-AA Bulk 2,664
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    Rochester Electronics LLC 2SA1626-T-AZ

    SMALL SIGNAL BIPOLAR TRANS PNP
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    DigiKey 2SA1626-T-AZ Bulk 451
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    Rochester Electronics LLC 2SA1627-T-AZ

    SMALL SIGNAL BIPOLAR TRANS PNP
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    DigiKey 2SA1627-T-AZ Bulk 346
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    Rochester Electronics LLC 2SA1625-T-AZ

    SMALL SIGNAL BIPOLAR TRANS PNP
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    DigiKey 2SA1625-T-AZ Bulk 955
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    Rochester Electronics LLC 2SA1625-FD-AZ

    SMALL SIGNAL BIPOLAR TRANS PNP
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    DigiKey 2SA1625-FD-AZ Bulk 955
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    2SA162 Datasheets (105)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA162 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA162 Unknown Cross Reference Datasheet Scan PDF
    2SA162 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SA162 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SA162 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SA162 Unknown Vintage Transistor Datasheets Scan PDF
    2SA162 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA162 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1620 Toshiba Japanese - Transistors Original PDF
    2SA1620 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1620 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1620 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1620 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1620 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1620 Toshiba SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Scan PDF
    2SA1620 Toshiba TRANSISTOR (AUDIO FREQUENCY AMPLIFIER APPLICATIONS) Scan PDF
    2SA1620 Toshiba PNP transistor Scan PDF
    2SA1620O Toshiba Silicon PNP Transistor Scan PDF
    2SA1620Y Toshiba Silicon PNP Transistor Scan PDF
    2SA1621 Toshiba Japanese - Transistors Original PDF

    2SA162 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SA1621

    Abstract: 2SC4210
    Text: 2SC4210 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC4210 ○ 低周波電力増幅用 単位: mm • 直流電流増幅率が高い。: hFE = 100~320 • 2SA1621 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C)


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    2SC4210 2SA1621 O-236MOD SC-59 2SA1621 2SC4210 PDF

    2sa1627

    Abstract: pnp 600v 1a pnp transistor 600V TO-126C
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SA1627 TRANSISTOR PNP TO-126C FEATURES Power dissipation PCM : 1.25 W (Tamb=25℃) 1. EMITTER Collector current : -1 A ICM Collector-base voltage V V(BR)CBO : -600


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    O-126C 2SA1627 O-126C -300mA, -60mA -100mA -250V, 2sa1627 pnp 600v 1a pnp transistor 600V TO-126C PDF

    2SA1627

    Abstract: pnp transistor 600V 2sa162
    Text: UTC 2SA1627 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1627 is designed for general purpose amplifier and high speed switching applications. FEATURES *High voltage *Low collector saturation voltage. *High-speed switching


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    2SA1627 2SA1627 O-126 QW-R204-010 pnp transistor 600V 2sa162 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1621 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1621 Audio Power Amplifier Applications Unit: mm High hFE: hFE = 100~320 • Complementary to 2SC4210 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage


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    2SA1621 2SC4210 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1620 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1620 Audio Frequency Amplifier Applications • Unit: mm Complementary to 2SC4209 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −80


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    2SA1620 2SC4209 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC4210 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4210 Audio Power Amplifier Applications • High DC current gain: hFE = 100~320 • Complementary to 2SA1621 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating


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    2SC4210 2SA1621 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC4209 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4209 Driver Stage Amplifier Applications Voltage Amplifier Applications • Unit: mm Complementary to 2SA1620 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage


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    2SC4209 2SA1620 PDF

    2SA1620

    Abstract: 2SC4209
    Text: 2SA1620 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1620 ○ 励振段増幅用 ○ 電圧増幅用 • 単位: mm 2SC4209 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C) 項 目 記 号 定


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    2SA1620 2SC4209 O-236MOD SC-59 2SA1620 2SC4209 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1627 Plastic-Encapsulate Transistors PNP TO-126C FEATURES Power dissipation PCM : 1.25 W Tamb=25℃ Collector current ICM : -1 A Collector-base voltage V V(BR)CBO : -600 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1. EMITTER 2. COLLECTOR 3. BASE


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    2SA1627 O-126C -600V, -300mA, -60mA -100mA -250V, PDF

    pnp transistor 600V

    Abstract: PNP -600v
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1627A Preliminary PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR 1 „ TO-126C DESCRIPTION The UTC 2SA1627A is designed for general purpose amplifier and high speed switching applications. „ FEATURES * High voltage


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    2SA1627A O-126C 2SA1627A O-126 2SA1627AL-T60-K 2SA1627AG-T60-K 2SA1627AL-T6C-K 2SA1627AG-T6C-K O-126 O-126C pnp transistor 600V PNP -600v PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SA1625 TRANSISTOR PNP 1. EMITTER FEATURES z High Voltage z High Speed Switching z Low Collector Saturation Voltage 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


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    2SA1625 -400V -50mA -100mA -10mA PDF

    2SA1627A

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1627A PNP SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR  DESCRIPTION The UTC 2SA1627A is designed for general purpose amplifier and high speed switching applications.  FEATURES * High voltage * Low collector saturation voltage.


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    2SA1627A 2SA1627A 2SA1627AL-x-AA3-R 2SA1627AG-x-AA3-R 2SA1627AL-x-T60-K 2SA1627AG-x-T60-K 2SA1627AL-x-T6C-K 2SA1627AG-x-T6C-K 2SA1627AL-x-TN3-R 2SA1627AG-x-TN3-R PDF

    2SA1624

    Abstract: No abstract text available
    Text: Ordering number : 3 1 0 3 A PNP Epitaxial Planar Silicon Transistor 2SA1624 Color TV Chroma Output, High-Voltage Driver Applications


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    2SA1624 2SA1624 PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE 2SC4210 Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. • High hFE: + 0.5 25 -0.0 3 + 0.25 1.5 - 0.15 h FE=100~320 -1 • 1 Watts Amplifier Applications. • Complementary to 2SA1621 MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL


    OCR Scan
    2SC4210 2SA1621 100mA 700mA 500mA, PDF

    2SA1015

    Abstract: 2SA1091 2SA1371 2SA562TM 2SB548 2SB814 2SA1243 2SB642 2SB793 2SA1306A
    Text: - 34 - m s Type No. £ M a n u f. 2SA 1535 , tö T 2SA 1535A tö T = * SANYO 2SB1037 X 3E TOSHIBA B 'S NEC 1 Tn« B tL HITACHI H ± il FUJITSU tö T MATSUSHITA — M MITSUBISHI 2SB649A = 2SA 1542 □—A 2SA 1543 □— A 2SA1015 2SB642 2SA 1544 b m. 2SA1624


    OCR Scan
    2SB1037 2SB649A 2SB1186A 2SA1306A 2SB1186B 2SB548 2SB1314 2SA1783 2SA1015 2SA733 2SA1091 2SA1371 2SA562TM 2SB548 2SB814 2SA1243 2SB642 2SB793 2SA1306A PDF

    SA1673

    Abstract: 2SA1623 2SC4387 2sa161 2SA1616 2SA1670 2SA1671 2SA1615 2SA1615-Z 2SA1617
    Text: - 44 - Ta=25U*Ep(ÏTc=25<C m 2SA1615 2SA1615-Z 2SA1616 2SA1617 2SA1618 2SA1619 2SA1619A 2SA1620 2SA1621 2SA1622 2SA1623 2SA1624 2SA1625 2SA1626 2SA1627 2SA1630 2SA1633 2SA1634 2SA1635 2SA1641 2SA1643 2SA1653 2SA1654 2SA1655 2SA1656 2SA1666 2SA1667 2SA1668


    OCR Scan
    2SA1615 2SA1615-Z 2SA1616 2SA1617 2SA1618 2SA1619 2SC4362 SC-59 2SA1655 2SC4363 SA1673 2SA1623 2SC4387 2sa161 2SA1616 2SA1670 2SA1671 PDF

    BT 815 transistor

    Abstract: Transistor BFR 96 pt 4115 2SA1625 PA33 T108 X108 ih 0565 r EI 33 LX108
    Text: NEC l i f A I / 1] Silicon Tran sistor i i f X 2SA1625 PNP = S il£ i PNP Silicon Triple Diffused Transistor High Speed, High Voltage Switching mm O i^ ii E t 'C 'i'o V Ce o = - 4 0 0 ^ -fi • mm V V CE(sat)^ - 0 .5 V O T A 7 f s tf — 1 . 0 (T a — m


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    2SA1625 PWS300 SC-43B BT 815 transistor Transistor BFR 96 pt 4115 2SA1625 PA33 T108 X108 ih 0565 r EI 33 LX108 PDF

    2SA1626

    Abstract: K 4014 transistor pw 4014
    Text: DATA SHEET NEC PNP SILICON TRANSISTOR ELECTRON DEVICE 2SA1626 * D E S C R IP T IO N The 2S A 1 6 2 6 is designed fo r general purpose am plifier and high speed switching applications. P A C K A G E D IM E N S IO N S in millimeters FEATURES • High Voltage.


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    2SA1626 2SA1626 10--Collector 1988M K 4014 transistor pw 4014 PDF

    2SA1620

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE 2SC4209 Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS. VOLTAGE AMPLIFIER APPLICATIONS. • Complementary to 2SA1620. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage vCBO 80 V Collector-Emitter Voltage


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    2SC4209 2SA1620. 200mA 200mA, 2SA1620 PDF

    ci 3060 pt

    Abstract: 2SA1627 transistor 2SA1627 2SA162
    Text: SEC '> ' =1 > Silicon Transistor m + T fS rtX 2SA1627 n > b=7 > '^ 7.9 PN P = PNP Silicon Triple Diffused T ran sisto r High Speed High V oltag e Switching m # -Ç -fô lü IíE T - fo o V c e o = — 600 ^ mm) 7 .0 MAX. V o x > f 7 f v 7 X h°— K * si t v ^


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    2SA1627 PWS10 ci 3060 pt 2SA1627 transistor 2SA1627 2SA162 PDF

    2S897

    Abstract: 2SA1178 2SA1225 2SA1371 2SA1243 2SA1628 2SA1586 2SA879 2SA1770 2SA1283
    Text: 66 - m % tt T y p e No. 2 SB 1216 ^ ^ 2SB 1218 ^ 2SB 1218A a * 85 T fö T tö T 2SB 1219A fö 2SB 1220 ta 2SB 1219 V- 2SB 1222 2S8 1223 f 2SB 1224 2SB 1225 J 2SB 1226 ^ ±L 2SA1622 2SA1586 m ± m FU JITSU iß T MATSUS H I T A 2SB1218A 2 S A1576 2 S A 16 0 3


    OCR Scan
    2SA1647 2SB930A 2SB986 2SA1359 2SA1096 2SB1065 2SA1622 2SA1586 2SA1628 2SB1218A 2S897 2SA1178 2SA1225 2SA1371 2SA1243 2SA1628 2SA1586 2SA879 2SA1770 2SA1283 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1620 T O SH IB A 2 S A 1 620 TO SH IBA TRANSISTO R SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AU DIO FREQ U ENCY AM PLIFIER APPLICATIO N S + 0.5 2.5 - 0 .3 Complementary to 2SC4209 MAXIM UM RATINGS (Ta = + 0.25 1 .5 - 0 .1 5 , 25°C) SYMBOL CHARACTERISTIC


    OCR Scan
    2SA1620 2SC4209 PDF

    2SA1620

    Abstract: 2SC4209
    Text: TO SH IBA 2SC4209 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4209 Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS VOLTAGE AMPLIFIER APPLICATIONS • + 0.5 2 .5 -0 .3 Complementary to 2SA1620 I- MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


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    2SC4209 2SA1620 O-236MOD SC-59 2SC4209 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SH IB A 2SC4209 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4209 DRIVER STAGE AMPLIFIER APPLICATIONS VOLTAGE AMPLIFIER APPLICATIONS • Complementary to 2SA1620 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan
    2SC4209 2SA1620 961001EAA1 200mA 200mA, PDF