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    2SA173 Search Results

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    2SA173 Price and Stock

    Panasonic Electronic Components 2SA17380RL

    TRANS PNP 15V 0.05A MINI3-G1
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    DigiKey 2SA17380RL Reel
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    Panasonic Electronic Components 2SA17390RL

    TRANS PNP 15V 0.05A SMINI3-G1
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    Rochester Electronics LLC 2SA1730S-TD-E

    BIP PNP 3A 40V
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    DigiKey 2SA1730S-TD-E Bulk 919
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    onsemi 2SA1730S-TD-E

    2SA1730S-TD-E
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    Verical 2SA1730S-TD-E 6,894 1,124
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    2SA1730S-TD-E 3,000 1,124
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    Rochester Electronics 2SA1730S-TD-E 9,894 1
    • 1 $0.3142
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    Toshiba America Electronic Components 2SA1736(TE12L,ZC)

    Trans GP BJT PNP 50V 3A 4-Pin(3+Tab) PW-Mini
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    Verical 2SA1736(TE12L,ZC) 2,915 491
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    2SA1736(TE12L,ZC) 782 306
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    Quest Components 2SA1736(TE12L,ZC) 2,332
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    Chip One Stop 2SA1736(TE12L,ZC) Cut Tape 782
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    2SA173 Datasheets (117)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA173 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SA173 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SA173 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SA173 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SA173 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA173 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1730 Kexin PNP Epitaxial Planar Silicon Original PDF
    2SA1730 Sanyo Semiconductor High-speed switching Original PDF
    2SA1730 TY Semiconductor PNP Epitaxial Planar Silicon - SOT-89 Original PDF
    2SA1730 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1730 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1730 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1730 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1730 Sanyo Semiconductor PCP Type Transistors, XP5 / XP6 Type Transistors Scan PDF
    2SA1730 Sanyo Semiconductor HIGH-SPEED SWITCHING APPLICATIONS (Small Signal Transistors) Scan PDF
    2SA1730 Sanyo Semiconductor Small Signal Transistors for High Speed Switching Scan PDF
    2SA1730Q Sanyo Semiconductor PNP Epitaxial Planar Silicon Transistor Scan PDF
    2SA1730R Sanyo Semiconductor PNP Epitaxial Planar Silicon Transistor Scan PDF
    2SA1730S Sanyo Semiconductor PNP Epitaxial Planar Silicon Transistor Scan PDF
    2SA1731 Sanyo Semiconductor High-speed switching Original PDF

    2SA173 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    smd ic marking PC

    Abstract: SMD MARKING 2SA1734
    Text: Transistors IC SMD Type Silicon PNP Epitaxial 2SA1734 Features Low saturation voltage: VCE sat = -0.5 V (max) (IC = -700 mA). High speed switching time: tstg = 0.2ìs (typ.). Small flat package. PC = 1.0 to 2.0 W (mounted on ceramic substrate). Absolute Maximum Ratings Ta = 25


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    2SA1734 smd ic marking PC SMD MARKING 2SA1734 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SA1730 Features Adoption of FBET , MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage. Fast switching speed. Small-sized package. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage


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    2SA1730 250mm2 -75mA PDF

    2SA1736

    Abstract: 2SC4541
    Text: 2SA1736 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1736 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1.5 A) • High speed switching time: tstg = 0.2 s (typ.)


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    2SA1736 2SC4541 2SA1736 2SC4541 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Product specification 2SA1735 Features Low Saturation Voltage: VCE sat = -0.5V (max) (IC = -500mA) High Speed Switching Time: tstg = 0.25ìs(typ.) Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SC4540 Absolute Maximum Ratings Ta = 25


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    2SA1735 -500mA) 2SC4540 -500mA -25mA -100mA PDF

    2SA1738

    Abstract: 2SC3757 XP4654
    Text: Composite Transistors XP4654 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For high speed switching 1 6 2 5 3 4 0 to 0.1 2SC3757+2SA1738 0.12 –0.02 0.9±0.1 ● 0.7±0.1 • Basic Part Number of Element


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    XP4654 2SC3757 2SA1738 200MHz 2SA1738 XP4654 PDF

    2SA1735

    Abstract: 2SC4540
    Text: 2SA1735 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1735 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −500 mA) • High speed switching time: tstg = 0.25 µs (typ.)


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    2SA1735 2SC4540 2SA1735 2SC4540 PDF

    2SA1738

    Abstract: 2SC3757
    Text: Transistor 2SA1738 Silicon PNP epitaxial planer type For high speed switching Unit: mm 0.40+0.10 ñ0.05 • Features ■ Absolute Maximum Ratings 0.4±0.2 5° 2.8+0.2 -0.3 1.50+0.25 -0.05 10° Symbol Ratings Unit Collector to base voltage VCBO –15 V Collector to emitter voltage


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    2SA1738 2SA1738 2SC3757 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1738 Silicon PNP epitaxial planar type For high speed switching Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2.8+0.2 –0.3 3 • High speed switching (Pair with 2SC3757)


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    2002/95/EC) 2SA1738 2SC3757) PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1739G Silicon PNP epitaxial planar type For high speed switching Complementary to 2SC3938G • Features ■ Package • High speed switching • Low collector-emitter saturation voltage VCE(sat)


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    2002/95/EC) 2SA1739G 2SC3938G PDF

    2SA1734

    Abstract: 2SC4539
    Text: 2SA1734 TOSHIBA Transistor Silicon PNP Triple Epitaxial Type PCT process 2SA1734 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −700 mA) • High speed switching time: tstg = 0.2 µs (typ.)


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    2SA1734 2SC4539 2SA1734 2SC4539 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SA1736 Features • • • • • • Low saturation voltage: VCE sat =0.5V(Max.) (IC=1.5A) High speed switching: tstg=0.2us(Typ.) Small flat package


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    2SA1736 2SC4541 75mAdc) 100mAdc, 10Vdc, 75mAdc, 250mm2x0 PDF

    2SA1730

    Abstract: EN3134
    Text: Ordering number:EN3134 PNP Epitaxial Planar Silicon Transistor 2SA1730 High-Speed Switching Applications Features Package Dimensions • Adoption of FBET , MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching speed.


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    EN3134 2SA1730 2SA1730] 2SA1730 EN3134 PDF

    2SC3938G

    Abstract: IC12080
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1739G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high speed switching Complementary to 2SC3938G • Features ue pl d in an c se ed lud pl vi an m m es


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    2002/95/EC) 2SA1739G 2SC3938G 2SC3938G IC12080 PDF

    2SA1734

    Abstract: 2SC4539
    Text: 2SA1734 TOSHIBA Transistor Silicon PNP Triple Epitaxial Type PCT process 2SA1734 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −700 mA) • High speed switching time: tstg = 0.2 µs (typ.)


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    2SA1734 2SC4539 2SA1734 2SC4539 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1735 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1735 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −500 mA) • High speed switching time: tstg = 0.25 µs (typ.)


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    2SA1735 2SC4540 SC-62 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1736 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1736 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1.5 A) • High speed switching time: tstg = 0.2 µs (typ.)


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    2SA1736 2SC4541 SC-62 PDF

    2044B

    Abstract: 2SA1732 ITR04435 ITR04436 ITR04437 ta1210 N-313
    Text: 注文コード No. N 3 1 3 6 2SA1732 N3136 20400 2SA1732 特長 PNP エピタキシァルプレーナ形シリコントランジスタ 高速度スイッチング用 ・FBET, MBIT プロセス採用。 ・電流容量が大きい。 ・コレクタ・エミッタ飽和電圧が低い。


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    2SA1732 N3136 2044B ITR04442 ITR04439 ITR04443 ITR04444 2044B 2SA1732 ITR04435 ITR04436 ITR04437 ta1210 N-313 PDF

    marking SA

    Abstract: No abstract text available
    Text: 2SA1734T2G Preferred Device PNP Silicon Transistor The device is housed in the SOT-89 package, which is designed for medium power surface mount applications. • High Current: 1.2 Amp • Available in 7 inch/1000 unit Tape and Reel • Device Marking: SA http://onsemi.com


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    2SA1734T2G OT-89 inch/1000 2SA1734T2G/D marking SA PDF

    2SA1739

    Abstract: 2SC3938
    Text: Transistors 2SA1739 Silicon PNP epitaxial planar type For high speed switching Complementary to 2SC3938 0.425 Unit: mm 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 0.9+0.2 –0.1 • High speed switching • Low collector-emitter saturation voltage VCE(sat)


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    2SA1739 2SC3938 2SA1739 2SC3938 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA1736 Features • • • • • • Low saturation voltage: VCE sat =0.5V(Max.) (IC=1.5A) High speed switching: tstg=0.2us(Typ.) Small flat package


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    2SA1736 2SC4541 75mAdc) 100mAdc, 10Vdc, 75mAdc, 250mm2x0 PDF

    2044B

    Abstract: 2SA1731 ITR04425
    Text: Ordering number:ENN3135A PNP Epitaxial Planar Silicon Transistor 2SA1731 High-Speed Switching Applications Package Dimensions • Adoption of FBET, MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · High-speed switching.


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    ENN3135A 2SA1731 2045B 2SA1731] 2044B 2044B 2SA1731 ITR04425 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1735 SILICON PNP EPITAXIAL T Y P E Unit in mm 4.6MAX . ] 7MAX. » POWER AMPLIFIER APPLICATIONS » POWER SWITCHING APPLICAGIONS Low Saturation Voltage : VcE sat =-0.5V(Max.) (Ic=-500mA) High Speed Switching Time: tstg=0. 2 5 |J S (Typ.) Small Flat Package


    OCR Scan
    2SA1735 -500mA) 2SC4540 -10mA, -100mA -700mA -500mA, -25mA PDF

    2SA1736

    Abstract: 2SC4541 marking HE M2X marking
    Text: TO SH IBA 2SA1736 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 736 POWER AMPLIFIER APPLICATIONS U n it in mm POWER SWITCHING APPLICATIONS 1.6MAX. —j- * 4.6MAX. 1.7MAX. 0.4 + 0.05 i Low Saturation V o lta g e: V q ^ (sat) = —0.5V (Max.) (l£ = —1.5A)


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    2SA1736 2SC4541 2SA1736 2SC4541 marking HE M2X marking PDF

    022sa

    Abstract: 1733K A1733K 2SA1733
    Text: 2SA1733K/2SA1808 h ~7> v 7, $ / T ransistors 2SA 1733K 2SA 1808 — PNP y lj 3 > t ' 7 > y Z $ Epitaxial Planar PNP Silicon Transistor Amplifier h 7 1 2S A 1733K 1.9+ 0.2 0.8±0. i o . 95 O .s s j • Features < )in > ÿ 2S A 1808 2.9±0.2 2) I 1 ) Emitter


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    2SA1733K/2SA1808 1733K 1733K SC-59 SC-70 2SA1733K/2SA1808 022sa A1733K 2SA1733 PDF